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43 条记录 (耗时 0.038 秒)

    Radiographic phosphor screen
    12.
    发明授权
    Radiographic phosphor screen 失效
    射线荧光屏

    公开(公告)号：US4041319A

    公开(公告)日：1977-08-09

    申请号：US670833

    申请日：1976-03-26

    申请人： Tadashi Fukuzawa ,  Teruki Suzuki ,  Shigeru Sato

    发明人： Tadashi Fukuzawa ,  Teruki Suzuki ,  Shigeru Sato

    IPC分类号： G01T1/20 ,  C09K11/08 ,  C09K11/77 ,  C09K11/83 ,  G21K4/00 ,  H01J29/38 ,  G01J1/58

    CPC分类号： C09K11/7708 ,  C09K11/7709 ,  G21K4/00

    摘要： A radiographic phosphor screen to be used as an intensifying screen, a direct viewing fluorescent screen, an input screen of an image intensifier tube for radiography and the like, which comprises a substrate and, supported thereon, a phosphor represented by the following general formula:M(P.sub.x, V.sub.1.sub.-x)0.sub.4wherein M stands for at least one element selected from the group consisting of yttrium (Y), lanthanum (La), gadolium (Gd) and lutetium (Lu) and x is a number of from 0.7 to 0.99,Or a phosphate formed by activating said phosphor with 0.01 to 0.5 mole % of thulium (Tm).

    摘要翻译： 用作增强屏幕的放射线照相荧光屏，直视荧光屏，用于放射线照相的图像增强管的输入屏幕等，其包括基底，并且在其上支撑由以下通式表示的荧光体：

    Optical transmission substrate, method for manufacturing optical transmission substrate and optoelectronic integrated circuit
    15.
    发明申请
    Optical transmission substrate, method for manufacturing optical transmission substrate and optoelectronic integrated circuit 有权
    光传输基板，光传输基板和光电集成电路的制造方法

    公开(公告)号：US20050117833A1

    公开(公告)日：2005-06-02

    申请号：US10977170

    申请日：2004-10-29

    申请人： Tadashi Fukuzawa ,  Masaki Hasegawa

    发明人： Tadashi Fukuzawa ,  Masaki Hasegawa

    IPC分类号： G02B6/122 ,  G02B6/12 ,  G02B6/125 ,  G02B6/13 ,  G02B6/30 ,  G02B6/42 ,  G02B6/43 ,  H05K1/02 ,  G02B6/10

    CPC分类号： G02B6/30 ,  G02B6/125 ,  G02B6/4214 ,  G02B6/43 ,  G02B2006/12104 ,  H05K1/0274 ,  H05K1/144

    摘要： Provided is an optical transmission substrate including: a first substrate; an optical waveguide which has clad covering a core and a periphery of the core and extends on an upper surface of the first substrate; a second substrate provided parallel to the first substrate so that a lower surface thereof contacts an upper surface of the optical waveguide; a reflection surface which is provided on a cross section of the core at an end of the optical waveguide and reflects light, which travels through the core of the optical waveguide, toward the second substrate; and a light guide which is provided in the second substrate and guides the light, which is reflected toward the second substrate, toward an upper surface of the second substrate from a position closer to the core than an upper surface of the clad.

    摘要翻译： 提供一种光传输基板，包括：第一基板; 光波导，其具有包覆芯和芯的周边并且在第一基板的上表面上延伸的光导体; 第二基板，其平行于第一基板设置，使得其下表面接触光波导的上表面; 在所述光波导的端部设置在所述芯的截面上并反射穿过所述光波导的芯的光朝向所述第二基板的反射面; 以及导光体，其设置在所述第二基板中，并且从所述包层的上表面的距离更靠近所述芯的位置将从所述第二基板反射的光导向所述第二基板的上表面。

    Coupled quantum well tunable laser
    16.
    发明授权
    Coupled quantum well tunable laser 失效
    耦合量子阱可调激光器

    公开(公告)号：US5287377A

    公开(公告)日：1994-02-15

    申请号：US58997

    申请日：1993-05-06

    申请人： Tadashi Fukuzawa ,  Ling Y. Liu ,  Emilio E. Mendez

    发明人： Tadashi Fukuzawa ,  Ling Y. Liu ,  Emilio E. Mendez

    IPC分类号： H01S5/00 ,  H01S3/0941 ,  H01S5/026 ,  H01S5/04 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S3/0941 ,  H01S5/041 ,  H01S5/06203 ,  H01S5/026 ,  H01S5/0614 ,  H01S5/06206 ,  H01S5/06213 ,  H01S5/0622 ,  H01S5/3425

    摘要： The present invention is the use of coupled quantum wells in the active region of a semiconductor laser to modulate the frequency and amplitude of the light output of the laser. In a particular embodiment of the present invention the coupled quantum wells are contained in a graded index of refraction semiconductor double heterostructure laser. The active region of this tunable laser consists of two quantum wells having a width of approximately 50 Angstroms or less which are separated by a barrier layer having a width of approximately 20 Angstroms or less. The quantum well material is intrinsic GaAs and the barrier layer is Al.sub.x Ga.sub.1-x As wherein x=0.23. The active region is surrounded by the double heterostructure in which one side is doped p-type and the second side is doped n-type. The resulting laser is a p-i-n type structure. A reverse bias with respect to the flat band voltage of the p-i-n structure is applied across the p-i-n structure which modulates both the frequency and the intensity of the laser output. The tunable laser is pumped with a variety of conventional means, including both electrical and optical pumping. The modulation of the wavelength is approximately linear over a 1.5 volt operating range. A tunable laser, such as the present invention, having an output wavelength modulated by an electric field is useful in the field of optical communications and computing.

    摘要翻译： 本发明是在半导体激光器的有源区域中使用耦合量子阱来调制激光器的光输出的频率和幅度。 在本发明的特定实施例中，耦合的量子阱包含在渐变折射率半导体双异质结构激光器中。 该可调谐激光器的有源区域由宽度约为50埃或更小的两个量子阱组成，该量子阱由宽度约为20埃或更小的阻挡层隔开。 量子阱材料是本征GaAs，势垒层是Al x Ga 1-x As，其中x = 0.23。 有源区被双异质结构包围，其中一侧掺杂p型，第二面掺杂n型。 所得到的激光器是p-i-n型结构。 相对于p-i-n结构的平带电压的反向偏压被施加在p-i-n结构上，该p-i-n结构调制激光输出的频率和强度。 可调谐激光器以各种常规手段进行泵送，包括电泵浦和光泵浦。 在1.5伏工作范围内，波长的调制近似线性。 具有由电场调制的输出波长的本发明的可调谐激光器在光通信和计算领域是有用的。

    Fabrication of quantum devices in compound semiconductor layers and resulting structures
    17.
    发明授权
    Fabrication of quantum devices in compound semiconductor layers and resulting structures 失效
    复合半导体层和结构结构中量子器件的制造

    公开(公告)号：US5170226A

    公开(公告)日：1992-12-08

    申请号：US701925

    申请日：1991-05-17

    申请人： Tadashi Fukuzawa ,  Hiro Munekata

    发明人： Tadashi Fukuzawa ,  Hiro Munekata

    IPC分类号： H01L29/06 ,  H01L21/18 ,  H01L21/265 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L25/065 ,  H01L29/80 ,  H01L29/812

    CPC分类号： B82Y10/00 ,  H01L21/182 ,  H01L21/2654 ,  H01L25/0657 ,  H01L29/66469 ,  H01L29/66924 ,  H01L2225/06541 ,  H01L2924/0002 ,  Y10S438/962

    摘要： Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electronic device with high speed and low power consumption, using a combination of low-temperature-growth molecular beam epitaxy (LTG-MBE) and focused ion beam (FIB) implantation. The compound semiconductor (GaAs) epitaxial layers, which are made by LTG-MBE, are used as targets of Ga FIB implantation to make Ga wire or dot arrays. Precipitation of arsenic microcrystals, which are initially embedded in a single crystal GaAs layer and act as Schottky barriers, are typically observed in an LTG GaAs layer. A thermal annealing process, after implantation, changes the arsenic microcrystals to GaAs crystals if the arsenic microcrystals are in the region in which the Ga ions are implanted. A wire-like shape free of As microcrystals then acts as a quantum wire for electrons or holes whereas a dot-like shape free of As microcrystals acts as a quantum dot. The co-existence of Ga ions and dopant ions, which provides conductivity type carriers opposite to the conductivity type of the majority carriers of a channel region of an FET, provides the fabrication of very narrow junction gate region for any FET.

    Optical beam deflector
    18.
    发明授权
    Optical beam deflector 失效
    光束偏转器

    公开(公告)号：US5157543A

    公开(公告)日：1992-10-20

    申请号：US625290

    申请日：1990-12-10

    申请人： Tadashi Fukuzawa ,  Satoru S. Kano ,  Yutaka Takahashi

    发明人： Tadashi Fukuzawa ,  Satoru S. Kano ,  Yutaka Takahashi

    IPC分类号： G02F1/295 ,  H01S5/026 ,  H01S5/062

    CPC分类号： H01S5/026 ,  G02F1/2955 ,  H01S5/0624 ,  H01S5/06243

    摘要： An apparatus for changing the direction of an optical beam comprises a thin film grating deflector; an optical energy source for providing optical energy to strike the deflector at a first angle with respect to gratings of the deflector and to exit the deflector at a second angle with respect to the gratings; and elements for applying a voltage to the deflector to vary the second angle. The optical energy source preferably comprises a laser diode; and a collimator for coupling energy from the laser diode to the grating deflector. The grating deflector is a planar waveguide including a plurality of stacked quantum wells formed of GaAs separated by barriers of AlGaAs. Optical energy provided to the grating deflector in a first direction is deflected in a second direction. These directions define a plane in which the waveguide is disposed. The quantum wells are stacked in a direction perpendicular to a plane of the waveguide. The optical energy source, the thin film grating deflector, the voltage applying elements and the collimator may be integrated into a single chip.

    Distributed feedback semiconductor laser
    19.
    发明授权
    Distributed feedback semiconductor laser 失效
    分布式反馈半导体激光器

    公开(公告)号：US4720836A

    公开(公告)日：1988-01-19

    申请号：US767631

    申请日：1985-08-20

    申请人： Tadashi Fukuzawa ,  Hiroyoshi Matsumura ,  Shinji Tsuji ,  Hitoshi Nakamura ,  Kenji Hiruma

    发明人： Tadashi Fukuzawa ,  Hiroyoshi Matsumura ,  Shinji Tsuji ,  Hitoshi Nakamura ,  Kenji Hiruma

    IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/34 ,  H01S3/08 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/1228 ,  H01S5/34

    摘要： The present invention relates to a semiconductor laser which oscillates in a single longitudinal mode and with a low threshold current and which exhibits a good mode stability against reflected light, and provides a structure of a distributed feedback semiconductor laser with modulation for a gain. The structure is such that gain producing regions are periodically arranged and that a substance transparent to laser radiation is buried between the regions. A layer including the gain regions is formed of a superlattice layer, and an impurity is diffused or implanted into periodic positions of the layer, whereby the transparent regions and the gain regions with little lattice damages can be readily formed.

    摘要翻译： 本发明涉及一种半导体激光器，其以单一纵向模式和低阈值电流振荡，并且对反射光表现出良好的模式稳定性，并且提供具有用于增益的调制的分布式反馈半导体激光器的结构。 该结构使得增益产生区域周期性地布置，并且对于激光辐射透明的物质被埋在区域之间。 包含增益区域的层由超晶格层形成，杂质扩散或注入层的周期性位置，由此可以容易地形成几乎没有晶格损伤的透明区域和增益区域。