公开(公告)号：US20240274440A1

公开(公告)日：2024-08-15

申请号：US18631589

申请日：2024-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Te-Chien Hou ,  Yu-Ting Yen ,  Cheng-Yu Kuo ,  Chih Hung Chen ,  William Weilun Hong ,  Kei-Wei Chen

IPC: H01L21/3105 ,  B24B37/04 ,  B24B37/20 ,  C02F1/469 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/31053 ,  B24B37/042 ,  B24B37/044 ,  B24B37/20 ,  H01L21/02065 ,  H01L21/31055 ,  H01L29/66545 ,  C02F1/4691

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

公开(公告)号：US20230267264A1

公开(公告)日：2023-08-24

申请号：US18308916

申请日：2023-04-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Shuo Liu ,  Chih-Chun Hsia ,  Hsin-Ting Chou ,  Kuanhua Su ,  William Weilun Hong ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: G06F30/392 ,  G06T7/00

CPC classification number: G06F30/392 ,  G06T7/001 ,  G06F2111/20

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

公开(公告)号：US11621342B2

公开(公告)日：2023-04-04

申请号：US17068578

申请日：2020-10-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Hung Chen ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC: H01L29/66 ,  H01L29/40 ,  H01L21/67 ,  H01L21/321 ,  B24B37/00 ,  B24B37/10 ,  B24B7/22 ,  H01L29/08

Abstract: In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.

公开(公告)号：US11443095B2

公开(公告)日：2022-09-13

申请号：US16926026

申请日：2020-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Shuo Liu ,  Chih-Chun Hsia ,  Hsin Ting Chou ,  Kuanhua Su ,  William Weilun Hong ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: G06F30/392 ,  G06T7/00 ,  G06F111/20

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

公开(公告)号：US10916481B2

公开(公告)日：2021-02-09

申请号：US16017665

申请日：2018-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Hung Chen ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC: H01L21/66 ,  H01L21/321 ,  B24B37/013 ,  G01B7/06

Abstract: Various embodiments provide a thickness sensor and method for measuring a thickness of discrete conductive features, such as conductive lines and plugs. In one embodiment, the thickness sensor generates an Eddy current in a plurality of discrete conductive features, and measures the generated Eddy current generated in the discrete conductive features. The thickness sensor has a small sensor spot size, and amplifies peaks and valleys of the measured Eddy current. The thickness sensor determines a thickness of the discrete conductive features based on a difference between a minimum amplitude value and a maximum amplitude value of the measured Eddy current.

公开(公告)号：US20240378362A1

公开(公告)日：2024-11-14

申请号：US18783508

申请日：2024-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Shuo Liu ,  Chih-Chun Hsia ,  Hsin-Ting Chou ,  Kuanhua Su ,  William Weilun Hong ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: G06F30/392 ,  G06F111/20 ,  G06T7/00

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

公开(公告)号：US11984323B2

公开(公告)日：2024-05-14

申请号：US17372705

申请日：2021-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Te-Chien Hou ,  Yu-Ting Yen ,  Cheng-Yu Kuo ,  Chih Hung Chen ,  William Weilun Hong ,  Kei-Wei Chen

IPC: H01L21/3105 ,  B24B37/04 ,  B24B37/20 ,  C02F1/469 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/31053 ,  B24B37/042 ,  B24B37/044 ,  B24B37/20 ,  H01L21/02065 ,  H01L21/31055 ,  H01L29/66545 ,  C02F1/4691

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

公开(公告)号：US20240149388A1

公开(公告)日：2024-05-09

申请号：US18410408

申请日：2024-01-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kei-Wei Chen ,  Chih Hung Chen

IPC: B24B37/015 ,  B24B37/20 ,  B24B37/30 ,  B24B53/017

CPC classification number: B24B37/015 ,  B24B37/20 ,  B24B37/30 ,  B24B53/017

Abstract: A method includes polishing a wafer on a polishing pad, performing conditioning on the polishing pad using a disk of a pad conditioner, and conducting a heat-exchange media into the disk. The heat-exchange media conducted into the disk has a temperature different from a temperature of the polishing pad.

公开(公告)号：US20230398659A1

公开(公告)日：2023-12-14

申请号：US17822867

申请日：2022-08-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Te-Chien Hou ,  Chih Hung Chen ,  Liang-Che Chen ,  Shich-Chang Suen ,  Liang-Guang Chen

IPC: B24D3/00 ,  B24B7/22 ,  H01L21/304

CPC classification number: B24D3/00 ,  H01L21/304 ,  B24B7/228

Abstract: Polishing pads having varying protrusions and methods of forming the same are disclosed. In an embodiment, a polishing pad includes a polishing pad substrate; a first protrusion on the polishing pad substrate, the first protrusion including a central region and a peripheral region surrounding the central region, and a first hardness of the central region being greater than a second hardness of the peripheral region; and a first groove adjacent a first side of the first protrusion.

公开(公告)号：US11761751B2

公开(公告)日：2023-09-19

申请号：US17846910

申请日：2022-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Hung Chen ,  Kei-Wei Chen ,  Te-Ming Kung

IPC: G01B11/06 ,  G01Q60/24

CPC classification number: G01B11/0616 ,  G01Q60/24

Abstract: A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.