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公开(公告)号：US20190252237A1
公开(公告)日：2019-08-15
申请号：US16396438
申请日：2019-04-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen
IPC: H01L21/687 , G03F1/80 , H01L21/3065 , H01L21/67 , H01J37/32
CPC classification number: H01L21/68764 , G03F1/80 , H01J37/32009 , H01J37/32715 , H01J2237/334 , H01L21/3065 , H01L21/67069 , H01L21/68721 , H01L21/68735 , H01L21/68778
Abstract: A spin dry etching process includes loading an object into a dry etching system. A dry etching process is performed to the object, and the object is spun while the dry etching process is being performed. The spin dry etching process is performed using a semiconductor fabrication system. The semiconductor fabrication system includes a dry etching chamber in which a dry etching process is performed. A holder apparatus has a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein. The etchable object includes either a photomask or a wafer. A controller is communicatively coupled to the holder apparatus and configured to spin the holder apparatus in a clockwise or counterclockwise direction while the dry etching process is being performed. An insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the object as the dry etching process is performed.
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公开(公告)号：US10007176B2
公开(公告)日：2018-06-26
申请号：US15356386
申请日：2016-11-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen
CPC classification number: G03F1/62 , C23C14/16 , C23C14/165 , C23C14/18 , C23C16/01 , C23C16/26 , C23C16/56 , C23C28/32 , G03F1/64 , H01L21/0332 , H01L21/0335 , H01L21/0337
Abstract: A method includes depositing a first material layer over a substrate; and depositing a graphene layer over the first material layer, thereby forming a first assembly. The method further includes attaching a carrier to the graphene layer; removing the substrate from the first assembly; and removing the first material layer from the first assembly.
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公开(公告)号：US20170345703A1
公开(公告)日：2017-11-30
申请号：US15204761
申请日：2016-07-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen
IPC: H01L21/687 , H01J37/32 , H01L21/3065 , H01L21/67
CPC classification number: H01L21/68764 , G03F1/80 , H01J37/32009 , H01J37/32715 , H01J2237/334 , H01L21/3065 , H01L21/67069 , H01L21/68721 , H01L21/68735 , H01L21/68778
Abstract: A spin dry etching process includes loading an object into a dry etching system. A dry etching process is performed to the object, and the object is spun while the dry etching process is being performed. The spin dry etching process is performed using a semiconductor fabrication system. The semiconductor fabrication system includes a dry etching chamber in which a dry etching process is performed. A holder apparatus has a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein. The etchable object includes either a photomask or a wafer. A controller is communicatively coupled to the holder apparatus and configured to spin the holder apparatus in a clockwise or counterclockwise direction while the dry etching process is being performed. An insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the object as the dry etching process is performed.
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公开(公告)号：US20170293218A1
公开(公告)日：2017-10-12
申请号：US15362089
申请日：2016-11-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen
Abstract: In some embodiments, a patterned photomask has a plurality of shielding layers. In some embodiments, a photomask for mask patterning is described. The photomask includes a phase shift layer overlying a transparent layer. The photomask also includes a first shielding layer overlying the phase shift layer. The first shielding layer has a first thickness and a first optical density. The photomask further includes a second shielding layer overlying the first shielding layer. The second shielding layer has a second thickness and a second optical density. The second thickness is less that than the first thickness and the second optical density is less than the first optical density.
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公开(公告)号：US20140255825A1
公开(公告)日：2014-09-11
申请号：US13788105
申请日：2013-03-07
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
Inventor： Chih-Chiang Tu , Chun-Lang Chen , Jong-Yuh Chang , Chien-Chih Chen , Chen-Shao Hsu
IPC: G03F1/20
CPC classification number: G03F1/20
Abstract: Some embodiments relate a method of forming a photomask for a deep ultraviolet photolithography process (e.g., having an exposing radiation with a wavelength of 193 nm). The method provides a mask blank for a deep ultraviolet photolithography process. The mask blank has a transparent substrate, an amorphous isolation layer located over the transparent substrate, and a photoresist layer located over the amorphous isolation layer. The photoresist layer is patterned by selectively removing portions of the photoresist layer using a beam of electrons. The amorphous isolation layer is subsequently etched according to the patterned photoresist layer to form one or more mask openings. The amorphous isolation layer isolates electrons backscattered from the beam of electrons from the photoresist layer during patterning, thereby mitigating CD and overlay errors caused by backscattered electrons.
Abstract translation: 一些实施例涉及形成用于深紫外光刻工艺（例如，具有193nm的波长的曝光辐射）的光掩模的方法。 该方法提供用于深紫外光刻工艺的掩模坯料。 掩模坯料具有透明基板，位于透明基板上方的非晶隔离层以及位于非晶隔离层之上的光致抗蚀剂层。 通过使用电子束选择性去除光致抗蚀剂层的部分来对光致抗蚀剂层进行构图。 随后根据图案化的光致抗蚀剂层蚀刻非晶隔离层以形成一个或多个掩模开口。 非晶隔离层在图案化期间将电子反向散射的电子与光致抗蚀剂层隔离，从而减轻CD和由背散射电子引起的重叠误差。
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Patent Agency Ranking
公开(公告)号：US20220350235A1
公开(公告)日：2022-11-03
申请号：US17809979
申请日：2022-06-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US20220066312A1
公开(公告)日：2022-03-03
申请号：US17007920
申请日：2020-08-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US11086211B2
公开(公告)日：2021-08-10
申请号：US15940969
申请日：2018-03-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shih-Hao Yang , Chih-Chiang Tu , Chun-Lang Chen
Abstract: Masks and methods of forming the same are disclosed. The mask includes a substrate, a phase shift layer, a shading layer and a passivation layer. The phase shift layer is disposed over the substrate. The shading layer is disposed over the phase shift layer. The passivation layer is disposed over and in physical contact with the shading layer.
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公开(公告)号：US10345695B2
公开(公告)日：2019-07-09
申请号：US15475903
申请日：2017-03-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Fu Hsieh , Chih-Chiang Tu , Jong-Yuh Chang , Hsin-Chang Lee
Abstract: The present disclosure describes a method to form alignment marks on or in the top layer of an extreme ultraviolet (EUV) mask blank without the use of photolithographic methods. For example, the method can include forming a metal structure on the top layer of the EUV mask blank by dispensing a hexacarbonylchromium vapor on the top layer of the EUV mask and exposing the hexacarbonylchromium vapor to an electron-beam. The hexacarbonylchromium vapor is decomposed to form the metal structure at an area which is proximate to where the hexacarbonylchromium vapors interact with the electron-beam. In another example, the method can include forming a patterned structure in the top layer of an EUV mask blank with the use of an etcher aperture and an etching process.
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公开(公告)号：US20190041742A1
公开(公告)日：2019-02-07
申请号：US16153935
申请日：2018-10-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen
Abstract: Some embodiments pertain to a photomask for mask patterning. The photomask includes a phase shift layer overlying a transparent layer, a first shielding layer overlying the phase shift layer, and a second shielding layer overlying the first shielding layer. The first shielding layer has a first optical density, and the second shielding layer has a second optical density. The second optical density is less than the first optical density.
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