公开(公告)号：US11150558B2

公开(公告)日：2021-10-19

申请号：US16849818

申请日：2020-04-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Rem Chen ,  Ming-Shane Lu ,  Chung-Hao Chang ,  Jui-Ping Chuang ,  Li-Kong Turn ,  Fei-Gwo Tsai

IPC: G03F7/30 ,  H01L21/67

Abstract: A developing method is provided. The developing method includes rotating a wafer. The developing method also includes dispensing, through a first nozzle, a developer solution onto the rotated wafer through a first nozzle at a first rotating speed. The developing method further includes dispensing, through a second nozzle, a rinse solution onto the rotated wafer through a second nozzle at a second rotating speed. The second rotating speed is less than the first rotating speed. In addition, the developing method includes simultaneously moving the first nozzle and the second nozzle during either the dispensing of the developer solution or the dispensing of the rinse solution.

公开(公告)号：US10276469B2

公开(公告)日：2019-04-30

申请号：US14689210

申请日：2015-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Weibo Yu ,  Jui-Ping Chuang ,  Chen-Hsiang Lu ,  Shao-Yen Ku

IPC: H01L21/311 ,  H01L21/302 ,  H01L23/31 ,  H01L21/02 ,  H01L21/677

Abstract: A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.

公开(公告)号：US10101662B2

公开(公告)日：2018-10-16

申请号：US15676925

申请日：2017-08-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Rem Chen ,  Ming-Shane Lu ,  Chung-Hao Chang ,  Jui-Ping Chuang ,  Li-Kong Turn ,  Fei-Gwo Tsai

IPC: B08B3/08 ,  G03F7/30 ,  H01L21/67

Abstract: A developing method includes rotating a wafer. A developer solution is dispensed onto the rotated wafer through a first nozzle. The first nozzle is moved from a first position to a second position. The first position and the second position are over the wafer and within a perimeter of the wafer when viewed from a top of the wafer. The developer solution is dispensed through the first nozzle when moving the first nozzle from the first position to the second position. The first nozzle is moved back from the second position to the first position immediately after the first nozzle is moved from the first position to the second position. The developer solution is dispensed through the first nozzle when moving the first nozzle from the second position to the first position.

公开(公告)号：US10073354B2

公开(公告)日：2018-09-11

申请号：US14706871

申请日：2015-05-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsueh-Yi Chung ,  Yung-Cheng Chen ,  Fei-Gwo Tsai ,  Chi-Hung Liao ,  Shih-Chi Fu ,  Wei-Ti Hsu ,  Jui-Ping Chuang ,  Tzong-Sheng Chang ,  Kuei-Shun Chen ,  Meng-Wei Chen

IPC: G03B27/32 ,  G03F7/20 ,  G03F1/70 ,  G03F1/78 ,  G03F1/50 ,  G03F1/68 ,  H01L21/66

CPC classification number: G03F7/70433 ,  G03F1/50 ,  G03F1/68 ,  G03F1/70 ,  G03F1/78 ,  G03F7/20 ,  G03F7/70141 ,  G03F7/70158 ,  G03F7/70716 ,  H01L22/30

Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.

公开(公告)号：US09728533B2

公开(公告)日：2017-08-08

申请号：US14578746

申请日：2014-12-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Li Chou ,  Shao-Yen Ku ,  Pei-Hung Chen ,  Jui-Ping Chuang

IPC: H01L29/78 ,  H01L27/088 ,  C11D7/32 ,  C11D7/34 ,  C11D11/00 ,  H01L21/8238 ,  H01L21/02 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L27/088 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66583 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7842 ,  H01L29/7848

Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method.

公开(公告)号：US09704714B2

公开(公告)日：2017-07-11

申请号：US14688191

申请日：2015-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Weibo Yu ,  Jui-Ping Chuang ,  Chen-Hsiang Lu ,  Shao-Yen Ku

IPC: H01L21/66 ,  H01L21/263 ,  H05F3/06 ,  H05F3/04 ,  H01L21/67 ,  H01J37/00 ,  H01L21/677

CPC classification number: H01L21/263 ,  H01J37/00 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67733 ,  H01L21/67736 ,  H01L22/14 ,  H01L22/20 ,  H05F3/04 ,  H05F3/06

Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.

公开(公告)号：US20150241786A1

公开(公告)日：2015-08-27

申请号：US14189169

申请日：2014-02-25

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Yi-Rem Chen ,  Ming-Shane Lu ,  Chung-Hao Chang ,  Jui-Ping Chuang ,  Li-Kong Turn ,  Fei-Gwo Tsai

IPC: G03F7/30

CPC classification number: G03F7/3021 ,  H01L21/67051 ,  H01L21/6715

Abstract: A tool and a method of developing are provided. In various embodiments, the method of developing includes rotating a wafer at a first rotating speed. The method further includes dispensing a developer solution onto the wafer at the first rotating speed by a first nozzle above the wafer, wherein the first nozzle moves back and forth along a path during dispensing the developer solution. The method further includes rotating the wafer at a second rotating speed to spread the developer solution onto the wafer uniformly. The method further includes dispensing a rinse solution onto the wafer at the second rotating speed by a second nozzle above the wafer.

Abstract translation: 提供了一种工具和开发方法。 在各种实施例中，显影方法包括以第一旋转速度旋转晶片。 该方法还包括通过晶片上方的第一喷嘴以第一转速将显影剂溶液分配到晶片上，其中在分配显影剂溶液期间第一喷嘴沿着路径前后移动。 该方法还包括以第二转速旋转晶片以将显影剂溶液均匀地分散在晶片上。 该方法还包括通过晶片上方的第二喷嘴以第二转速将冲洗溶液分配到晶片上。