摘要:
A capacitor microphone includes a plate that has a fixed electrode, a diaphragm that has a variable electrode, the plate that vibrates by sound waves, and a spacer that insulates and supports the plate and the diaphragm forming airspace between the fixed electrode and the variable electrode, wherein at least either of the plate or the diaphragm is a semiconductor single-layered film or a metal single-layered film whose specific resistance in a nearby edge close to the spacer is higher than that in a central unit away from the spacer.
摘要:
A semiconductor device includes a substrate, a semiconductor chip having a diaphragm, which vibrates in response to sound pressure variations, and a circuit chip that is electrically connected to the semiconductor chip so as to control the semiconductor chip, wherein the semiconductor chip is fixed to the surface of the circuit chip whose backside is mounted on the surface of the substrate. Herein, a plurality of connection terminals formed on the backside of the semiconductor chip are electrically connected to a plurality of electrodes running through the circuit chip. A ring-shaped resin sheet is inserted between the semiconductor chip and the circuit chip. The semiconductor chip and the circuit chip vertically joined together are stored in a shield case having a mount member (e.g., a stage) and a cover member, wherein connection terminals of the circuit chip are exposed to the exterior via through holes of the stage.
摘要:
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.
摘要:
A semiconductor device is designed such that a semiconductor sensor chip having a diaphragm for detecting pressure variations based on the displacement thereof is fixed onto the upper surface of a substrate having a rectangular shape, which is covered with a cover member so as to form a hollow space embracing the semiconductor sensor chip between the substrate and the cover member. Herein, the substrate is sealed with a molded resin such that chip connection leads packaging leads are partially exposed externally of the molded resin; the chip connection leads are electrically connected to the semiconductor sensor chip and are disposed in line along one side of the semiconductor sensor chip; and the packaging leads are positioned opposite the chip connection leads by way of the semiconductor sensor chip. Thus, it is possible to downsize the semiconductor device without substantially changing the size of the semiconductor sensor chip.
摘要:
A microphone package includes a housing having a cavity and a sound hole allowing the cavity to communicate with the exterior. A microphone chip is mounted on the mounting surface inside of the cavity. The sound hole is opened on the interior surface of the housing positioned opposite to the mounting surface. A resin sealing portion is formed to seal the surrounding area of the microphone chip and the mounting surface. Alternatively, a semiconductor sensor chip and a control circuit chip are mounted on the mounting surface inside of the cavity of the housing and are electrically connected together via bonding wires. Herein, the resin sealing portion entirely seals the control circuit chip and the first joining portions joining the first ends of the bonding wires, while a resin potting portion seals the second joining portions between the electrode pads and the second ends of the bonding wires.
摘要:
A microphone package includes a housing, which has a cavity and a sound hole for allowing the cavity to communicate with the exterior, and a microphone chip, which is mounted on the mounting surface so as to detect sound within the cavity. The sound hole is opened in connection with the mounting surface and is surrounded by a projection wall projecting upwardly from the mounting surface at a prescribed position in proximity to the microphone chip.
摘要:
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate and a step B of depositing or vapor depositing at least one atom layer of gallium.
摘要:
A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate. The substrate and the lid can be accurately positioned.
摘要:
A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate. The substrate and the lid can be accurately positioned
摘要:
In a capacitor microphone, a diaphragm is positioned opposite to a fixed electrode for covering inner holes of a ring-shaped support, wherein when the diaphragm is deflected to approach the fixed electrode due to electrostatic attraction upon application of a bias voltage, internal stress that occurs on the diaphragm is canceled by compressive stress that is applied to the diaphragm in advance. The diaphragm is formed using a multilayered structure including a first thin film and a second thin film whose internal stress differs from the internal stress of the first thin film, thus adjusting the total internal stress thereof. The diaphragm can be formed in such a way that a center layer having a single-layered structure is sandwiched between first and second coating layers having controlled residual tensions and resistance against hydrofluoric acid.