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    Resist polymer, making method, and chemically amplified positive resist composition
    11.
    发明申请
    Resist polymer, making method, and chemically amplified positive resist composition 审中-公开
    抗性聚合物，制备方法和化学放大正性抗蚀剂组合物

    公开(公告)号：US20050271978A1

    公开(公告)日：2005-12-08

    申请号：US11142782

    申请日：2005-06-02

    申请人： Takanobu Takeda ,  Osamu Watanabe

    发明人： Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03F7/033 ,  C08F4/00 ,  C08F212/14 ,  C08F220/10 ,  G03C1/492 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/0397 ,  G03F7/0392

    摘要： A polymer is prepared by radical polymerization of a monomer using an organotellurium or organoselenium compound as a polymerization initiator. The polymer has a narrower dispersity Mw/Mn and is adequately random. A resist composition comprising the polymer as a base resin has advantages including a dissolution contrast of resist film, high resolution, exposure latitude, process flexibility, good pattern profile after exposure, and minimized line edge roughness.

    摘要翻译： 使用有机碲或有机硒化合物作为聚合引发剂通过单体的自由基聚合来制备聚合物。 聚合物具有较窄的分散性Mw / Mn并且是充分随机的。 包含聚合物作为基础树脂的抗蚀剂组合物具有抗蚀剂膜的溶解对比度，高分辨率，曝光宽容度，工艺柔韧性，曝光后的良好图案轮廓和最小化线边缘粗糙度的优点。

    Polymer, resist composition and patterning process
    13.
    发明申请
    Polymer, resist composition and patterning process 有权
    聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US20050260521A1

    公开(公告)日：2005-11-24

    申请号：US10765919

    申请日：2004-01-29

    申请人： Jun Hatakeyama ,  Takanobu Takeda ,  Osamu Watanabe

    发明人： Jun Hatakeyama ,  Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03C1/492 ,  G03F7/039 ,  G03F7/075

    CPC分类号： G03F7/0395 ,  C08F220/28 ,  C08F222/20 ,  C08F230/08 ,  C08F232/08 ,  G03F7/0397 ,  G03F7/0758

    摘要： A polymer comprising recurring units containing silicon and recurring units having a substituent group of formula (1) is novel wherein A1 is a divalent group selected from furandiyl, tetrahydrofurandiyl and oxanorbornanediyl, R1 and R2 are selected from monovalent C1-C10 hydrocarbon groups, or R1 and R2 taken together may form an aliphatic hydrocarbon ring with the carbon atom, and R3 is hydrogen or a monovalent C1-C10 hydrocarbon group which may contain a hetero atom. The polymer is useful as a base resin to formulate a resist composition which is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength of less than 300 nm as well as satisfactory oxygen plasma etching resistance.

    摘要翻译： 含有硅的重复单元和具有式（1）的取代基的重复单元的聚合物是新颖的，其中A 1是选自呋喃二基，四氢呋喃基和氧杂甘露二烷基的二价基团，R 1， SO 2和R 2选自单价C 1 -C 10烃基或R 1和R 2 一起可以与碳原子一起形成脂族烃环，R 3是氢或一价C 1 -C 1 - 10个可以含有杂原子的烃基。 聚合物可用作基础树脂以配制对高能辐射敏感的抗蚀剂组合物，并且在小于300nm的波长下具有优异的灵敏度和分辨率以及满意的氧等离子体耐蚀刻性。

    Resist composition and patterning process
    14.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US06869748B2

    公开(公告)日：2005-03-22

    申请号：US10611881

    申请日：2003-07-03

    申请人： Takanobu Takeda ,  Osamu Watanabe

    发明人： Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03F7/027 ,  C08F20/26 ,  C08F212/04 ,  G03F7/039 ,  H01L21/027 ,  G03F7/004

    CPC分类号： G03F7/0392 ,  Y10S430/118 ,  Y10S430/143

    摘要： Resist compositions comprising as the base resin a polymer using an alkoxyalkyl (meth)acrylate as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a practical level of shelf stability, a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution over a wide baking temperature range. The compositions are best suited as a chemically amplified positive resist material for micropatterning in the manufacture of VLSI.

    摘要翻译： 包含作为基础树脂的抗蚀剂组合物使用（甲基）丙烯酸烷氧基烷基酯作为反应性基团的聚合物，其在酸的作用下可分解以增加在碱中的溶解度，其优点包括实际的贮存稳定性水平，显着提高碱的对比度 曝光前后的溶出速率，高灵敏度，以及较宽的烘烤温度范围内的高分辨率。 该组合物最适合用作VLSI制造中用于微图案化学的化学放大正性抗蚀剂材料。