摘要:
Provided is a technique to automatize a synthesis function of signal charged particles having different energies. A charged particle beam apparatus includes: a charged particle source configured to irradiate a sample with a primary charged particle ray; a first detector configured to detect a first signal electron having first energy from signal charged particles generated from the sample; a second detector configured to detect a second signal electron having second energy from signal charged particles generated from the sample; a first operation part configured to change a synthesis ratio of a signal intensity of the first signal electron and a signal intensity of the second signal electron and to generate a detected image corresponding to each synthesis ratio; a second operation part configured to calculate a ratio of signal intensities corresponding to predetermined two areas of the detected image generated for each synthesis ratio; and a third operation part configured to determine a mixture ratio to be used for acquisition of the detected image on a basis of a change of the ratio of signal intensities.
摘要:
A hermetic feedthrough for an implantable medical device includes an insulator, a conduit integrated with the insulator, and a pad coupled to an exterior surface of the insulator. The insulator includes a first material and the conduit includes a second material that is electrically conductive. The pad is configured to receive a lead coupled thereto. Further, the pad is electrically conductive and coupled to the conduit. The pad includes a first layer and a second layer overlaying at least a portion of the first layer.
摘要:
A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.
摘要:
A novel fluorescent compound having a high light fastness, high fluorescence quantum yield and sharp absorption spectrum, which emits fluorescence having a wavelength in long wavelength region, as well as its use as a labeling agent, is disclosed. In Formula [I] below, by forming a specific hetero ring(s) with R1 and R2, and/or R6 and R7, shift of the wavelength of the fluorescence to longer wavelength and increase in molar extinction coefficient are attained maintaining the high light fastness, high fluorescence quantum yield and sharp absorption spectrum which the fluorescent dyes having the boron dipyrromethene skeleton have.
摘要:
It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source (11), the wafer arranged on a holder (20) is irradiated with light in wavelength ranges different from each other from a light irradiation system (9), and at the same time, the wafer is irradiated with a charged particle beam. Thus, contrast of an image is improved and inspection is performed with high sensitivity.
摘要:
A CMOS LSI includes an inverter including first and second MOS transistors, a relatively long metal interconnection connected to an input node of the inverter, first and second diodes releasing charges born by the metal interconnection during a plasma process to first and second wells, and first and second MOS transistors maintaining a voltage between the first and second wells at a level not higher than a prescribed voltage. Therefore, even when an antenna ratio is high, a gate oxide film in the first and second MOS transistors is not damaged during the plasma process.
摘要:
A novel fluorescent compound having a high light fastness, high fluorescence quantum yield and sharp absorption spectrum, which emits fluorescence having a wavelength in long wavelength region, as well as its use as a labeling agent, is disclosed. In Formula [I] below, by forming a specific hetero ring(s) with R1 and R2, and/or R6 and R7, shift of the wavelength of the fluorescence to longer wavelength and increase in molar extinction coefficient are attained maintaining the high light fastness, high fluorescence quantum yield and sharp absorption spectrum which the fluorescent dyes having the boron dipyrromethene skeleton have.
摘要:
In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
摘要:
An apparatus and method for electron beam inspection with projection electron microscopy, is constructed so as to allow correction of changes in focus offsets due to changes in the electrically charged state particularly during inspection. The apparatus includes: a focus measure sensor unit; a focus measure calculation unit which calculates focus measure from the multiple image signals converted by the focus measure sensor unit; a focus position calculation unit which calculates the height of a confocal plane conjugate to the plane of convergence of a planar electron beam by an objective lens, on the basis of the calculated focus measure, and then calculates the focus position of the objective lens on the basis of the calculated height of the confocal plane; and a focus position correction unit which corrects the focus position of the objective lens according to the calculated focus position of the objective lens.
摘要:
An inspection apparatus comprising an electron emitting unit for sequentially emitting an electron beam in the direction of an inspection area of a sample; a deceleration unit for drawing back the electron beam in the vicinity of the inspection area; an imaging unit for forming images of the drawing back electron beam on multiple different image forming conditions; an image detecting unit for capturing the electron beam that formed an image corresponding to each image forming condition; and an image processing unit for comparing the images on different image forming conditions with one another to detect a defect in the inspection area.