Charged Particle Ray Apparatus and Pattern Measurement Method
    11.
    发明申请
    Charged Particle Ray Apparatus and Pattern Measurement Method 有权
    带电粒子装置和图案测量方法

    公开(公告)号:US20140001360A1

    公开(公告)日:2014-01-02

    申请号:US14002275

    申请日:2012-01-27

    IPC分类号: H01J37/05

    摘要: Provided is a technique to automatize a synthesis function of signal charged particles having different energies. A charged particle beam apparatus includes: a charged particle source configured to irradiate a sample with a primary charged particle ray; a first detector configured to detect a first signal electron having first energy from signal charged particles generated from the sample; a second detector configured to detect a second signal electron having second energy from signal charged particles generated from the sample; a first operation part configured to change a synthesis ratio of a signal intensity of the first signal electron and a signal intensity of the second signal electron and to generate a detected image corresponding to each synthesis ratio; a second operation part configured to calculate a ratio of signal intensities corresponding to predetermined two areas of the detected image generated for each synthesis ratio; and a third operation part configured to determine a mixture ratio to be used for acquisition of the detected image on a basis of a change of the ratio of signal intensities.

    摘要翻译: 提供了一种使具有不同能量的信号带电粒子的合成功能自动化的技术。 带电粒子束装置包括:带电粒子源,被配置为用一次带电粒子射线照射样品; 第一检测器,被配置为检测从所述样品产生的信号带电粒子的具有第一能量的第一信号电子; 第二检测器,被配置为检测从样品产生的信号带电粒子的具有第二能量的第二信号电子; 第一操作部,被配置为改变第一信号电子的信号强度和第二信号电子的信号强度的合成比,并且生成与每个合成比相对应的检测图像; 第二操作部,被配置为计算与针对每个合成比生成的检测图像的预定的两个区域相对应的信号强度的比率; 以及第三操作部件,被配置为基于信号强度比的变化来确定用于获取检测到的图像的混合比率。

    Charged particle beam apparatus
    13.
    发明授权
    Charged particle beam apparatus 有权
    带电粒子束装置

    公开(公告)号:US08193493B2

    公开(公告)日:2012-06-05

    申请号:US13032050

    申请日:2011-02-22

    IPC分类号: G01N23/00 G01N23/225

    摘要: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.

    摘要翻译: 一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。 使样品上的一次光束的分配是可变的,此外,基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。 此外,优化了许多光学参数和设备参数。 此外,测量和调整所选择的一次光束的性质。

    Fluorescent compound and labeling agent comprising the same
    14.
    发明授权
    Fluorescent compound and labeling agent comprising the same 有权
    荧光化合物和包含其的标记剂

    公开(公告)号:US08193350B2

    公开(公告)日:2012-06-05

    申请号:US12226725

    申请日:2007-04-27

    IPC分类号: C07F5/02

    摘要: A novel fluorescent compound having a high light fastness, high fluorescence quantum yield and sharp absorption spectrum, which emits fluorescence having a wavelength in long wavelength region, as well as its use as a labeling agent, is disclosed. In Formula [I] below, by forming a specific hetero ring(s) with R1 and R2, and/or R6 and R7, shift of the wavelength of the fluorescence to longer wavelength and increase in molar extinction coefficient are attained maintaining the high light fastness, high fluorescence quantum yield and sharp absorption spectrum which the fluorescent dyes having the boron dipyrromethene skeleton have.

    摘要翻译: 公开了一种具有高耐光性,高荧光量子产率和尖锐吸收光谱的新型荧光化合物,其发射具有长波长区域的波长的荧光,以及其作为标记剂的用途。 在下式[I]中,通过用R 1和R 2以及/或R 6和R 7形成特定的杂环,获得荧光波长到更长波长的移动和摩尔消光系数的增加,保持高光 具有硼二吡咯甲烷骨架的荧光染料的坚牢度,高荧光量子产率和尖锐的吸收光谱。

    CHARGED PARTICLE BEAM APPARATUS
    15.
    发明申请
    CHARGED PARTICLE BEAM APPARATUS 有权
    充电颗粒光束装置

    公开(公告)号:US20110204228A1

    公开(公告)日:2011-08-25

    申请号:US13126198

    申请日:2009-10-28

    IPC分类号: H01J37/28

    摘要: It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source (11), the wafer arranged on a holder (20) is irradiated with light in wavelength ranges different from each other from a light irradiation system (9), and at the same time, the wafer is irradiated with a charged particle beam. Thus, contrast of an image is improved and inspection is performed with high sensitivity.

    摘要翻译: 通过使用带电粒子束来检查具有电路图案的晶片上的缺陷的位置和类型,在带电粒子束装置中检查电路图案的特定层是困难的, 在半导体制造过程中。 在通过使用从带电粒子源(11)发射的带电粒子束来检查具有在半导体制造过程中的电路图案的晶片上的缺陷的位置和类型的时候,布置在保持器(20)上的晶片, 用光照射系统(9)照射彼此不同的波长的光,同时用带电粒子束照射晶片。 因此,改善了图像的对比度并且以高灵敏度进行检查。

    Semiconductor device provided with antenna ratio countermeasure circuit
    16.
    发明授权
    Semiconductor device provided with antenna ratio countermeasure circuit 有权
    具有天线比例对策电路的半导体装置

    公开(公告)号:US07589566B2

    公开(公告)日:2009-09-15

    申请号:US11290805

    申请日:2005-12-01

    IPC分类号: H03K19/00 H01L25/00 H01L23/62

    CPC分类号: H01L27/0207

    摘要: A CMOS LSI includes an inverter including first and second MOS transistors, a relatively long metal interconnection connected to an input node of the inverter, first and second diodes releasing charges born by the metal interconnection during a plasma process to first and second wells, and first and second MOS transistors maintaining a voltage between the first and second wells at a level not higher than a prescribed voltage. Therefore, even when an antenna ratio is high, a gate oxide film in the first and second MOS transistors is not damaged during the plasma process.

    摘要翻译: CMOS LSI包括:反相器,包括第一和第二MOS晶体管,连接到反相器的输入节点的相对较长的金属互连,第一和第二二极管,在等离子体处理期间将由金属互连产生的电荷释放到第一和第二阱,以及第一 以及第二MOS晶体管,其在第一和第二阱之间保持不高于规定电压的电压。 因此,即使在天线比高的情况下,在等离子体处理中也不会损坏第一和第二MOS晶体管中的栅极氧化膜。

    Fluorescent Compound and Labeling Agent Comprising the Same
    17.
    发明申请
    Fluorescent Compound and Labeling Agent Comprising the Same 有权
    荧光化合物和标记剂组成

    公开(公告)号:US20090176313A1

    公开(公告)日:2009-07-09

    申请号:US12226725

    申请日:2007-04-27

    IPC分类号: G01N21/77 C07F5/02

    摘要: A novel fluorescent compound having a high light fastness, high fluorescence quantum yield and sharp absorption spectrum, which emits fluorescence having a wavelength in long wavelength region, as well as its use as a labeling agent, is disclosed. In Formula [I] below, by forming a specific hetero ring(s) with R1 and R2, and/or R6 and R7, shift of the wavelength of the fluorescence to longer wavelength and increase in molar extinction coefficient are attained maintaining the high light fastness, high fluorescence quantum yield and sharp absorption spectrum which the fluorescent dyes having the boron dipyrromethene skeleton have.

    摘要翻译: 公开了一种具有高耐光性,高荧光量子产率和尖锐吸收光谱的新型荧光化合物,其发射具有长波长区域的波长的荧光,以及其作为标记剂的用途。 在下式[I]中,通过用R 1和R 2以及/或R 6和R 7形成特定的杂环,获得荧光波长到更长波长的移动和摩尔消光系数的增加,保持高光 具有硼二吡咯甲烷骨架的荧光染料的坚牢度,高荧光量子产率和尖锐的吸收光谱。

    Pattern defect inspection method and apparatus thereof
    18.
    发明授权
    Pattern defect inspection method and apparatus thereof 有权
    图案缺陷检查方法及其装置

    公开(公告)号:US07547884B2

    公开(公告)日:2009-06-16

    申请号:US11449650

    申请日:2006-06-09

    IPC分类号: G01N23/00 G21K7/00

    摘要: In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.

    摘要翻译: 在本发明中,充电控制电极的结构从栅格型切换为狭缝型,从而在用光束照射晶片时不形成阴影。 此外,在充电控制狭缝的前方设置有光束形成狭缝,防止了带电控制狭缝被用于预充电的电子束照射,从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外,设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。

    Apparatus and method for electron beam inspection with projection electron microscopy
    19.
    发明授权
    Apparatus and method for electron beam inspection with projection electron microscopy 有权
    用投影电子显微镜进行电子束检查的装置和方法

    公开(公告)号:US07420167B2

    公开(公告)日:2008-09-02

    申请号:US11478615

    申请日:2006-07-03

    IPC分类号: G21K7/00 G01N23/00 H01J3/14

    摘要: An apparatus and method for electron beam inspection with projection electron microscopy, is constructed so as to allow correction of changes in focus offsets due to changes in the electrically charged state particularly during inspection. The apparatus includes: a focus measure sensor unit; a focus measure calculation unit which calculates focus measure from the multiple image signals converted by the focus measure sensor unit; a focus position calculation unit which calculates the height of a confocal plane conjugate to the plane of convergence of a planar electron beam by an objective lens, on the basis of the calculated focus measure, and then calculates the focus position of the objective lens on the basis of the calculated height of the confocal plane; and a focus position correction unit which corrects the focus position of the objective lens according to the calculated focus position of the objective lens.

    摘要翻译: 用投影电子显微镜进行电子束检查的装置和方法被构造成允许校正由于带电状态的变化引起的焦点偏移变化,特别是在检查期间。 该装置包括:焦距测量传感器单元; 焦点测量计算单元,其从由所述焦点测量传感器单元转换的多个图像信号计算焦点测量; 焦点位置计算单元,基于计算出的焦点测量,计算由物镜与平面电子束的会聚平面共轭的高度,然后计算物镜的聚焦位置 共焦平面计算高度的基础; 以及聚焦位置校正单元,其根据计算出的物镜的聚焦位置校正物镜的聚焦位置。

    Inspection system, inspection method, and process management method
    20.
    发明授权
    Inspection system, inspection method, and process management method 有权
    检验制度,检验方法和流程管理方法

    公开(公告)号:US07411190B2

    公开(公告)日:2008-08-12

    申请号:US11450459

    申请日:2006-06-12

    IPC分类号: H01J37/301

    摘要: An inspection apparatus comprising an electron emitting unit for sequentially emitting an electron beam in the direction of an inspection area of a sample; a deceleration unit for drawing back the electron beam in the vicinity of the inspection area; an imaging unit for forming images of the drawing back electron beam on multiple different image forming conditions; an image detecting unit for capturing the electron beam that formed an image corresponding to each image forming condition; and an image processing unit for comparing the images on different image forming conditions with one another to detect a defect in the inspection area.

    摘要翻译: 一种检查装置,包括:电子发射单元,用于沿试样的检查区域的方向依次发射电子束; 减速单元,用于在检查区域附近拉回电子束; 用于在多个不同的图像形成条件下形成背面电子束的图像的成像单元; 图像检测单元,用于捕获形成与每个图像形成条件相对应的图像的电子束; 以及图像处理单元,用于将不同图像形成条件上的图像彼此进行比较,以检测检查区域中的缺陷。