公开(公告)号：US07507292B2

公开(公告)日：2009-03-24

申请号：US10522488

申请日：2003-06-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

IPC分类号： C30B11/06

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B9/12 ,  C30B29/403

摘要： A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.

摘要翻译： 一种III族元素氮化物单晶的制造方法，其特征在于，在混合助熔剂中使至少一种选自镓（Ga），铝（Al）和铟（In）的III族元素与氮（N） 的钠（Na）和至少一种碱金属（除了Na）和碱土金属之外。 该方法允许以良好的产率生产透明的III族元素氮化物的单晶，其位错密度降低，具有散装形式，并且大。 特别地，通过该方法制造的氮化镓单晶具有高质量并且具有大而透明的散装形式，因此具有很高的实用价值。

公开(公告)号：US20070296061A1

公开(公告)日：2007-12-27

申请号：US11578242

申请日：2005-03-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota ,  Seiji Nakahata

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota ,  Seiji Nakahata

IPC分类号： H01L29/20 ,  C03B17/00

CPC分类号： C30B9/08 ,  C30B9/00 ,  C30B11/00 ,  C30B11/06 ,  C30B29/403

摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

公开(公告)号：US20060102066A1

公开(公告)日：2006-05-18

申请号：US10545314

申请日：2004-02-13

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Muneyuki Nishioka ,  Satoru Fukumoto ,  Tomoyo Matsui ,  Takashi Saji

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Muneyuki Nishioka ,  Satoru Fukumoto ,  Tomoyo Matsui ,  Takashi Saji

IPC分类号： H01L21/322

CPC分类号： C30B35/007 ,  C01B35/12 ,  C30B11/02 ,  C30B29/22

摘要： A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal. Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.

摘要翻译： 具有优异的均匀性和可靠性的硼酸盐基结晶，其可用作光波长转换装置等，并且可以在短时间内以低成本容易地制备，通过将水溶性原料溶解在 水以制备水溶液，在水溶液中蒸发水，然后烧结或蒸发水而不烧结，从而形成晶体生长材料，并熔化所得材料以生长晶体。 此外，通过使用该晶体作为光学波长转换装置，可以实现高可靠性的激光振荡装置。

公开(公告)号：US20050225837A1

公开(公告)日：2005-10-13

申请号：US10511170

申请日：2001-12-12

申请人： Tetsuo Kojima ,  Susumu Konno ,  Shuichi Fujikawa ,  Koji Yasui ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Tetsuo Kojima ,  Susumu Konno ,  Shuichi Fujikawa ,  Koji Yasui ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： G02F1/35 ,  G02F2/02

CPC分类号： G02F1/3501 ,  G02F2001/3505

摘要： In a wavelength converting method, an ambient that is in contact with a surface of a non-linear optical crystal from which wavelength-converted light is outputted is a gas that is lower in content of nitrogen than air. A wavelength converting device includes a device for controlling the ambient in contact with a surface of the non-linear optical crystal from which the wavelength-converted light is outputted so the ambient is lower in nitrogen than air. A laser machining device includes the wavelength converting device.

摘要翻译： 在波长转换方法中，与输出波长转换光的非线性光学晶体的表面接触的环境是氮含量低于空气的气体。 波长转换装置包括用于控制与非线性光学晶体的表面接触的环境的装置，从该波长转换光输出波长转换的光，使得氮气中的环境比空气低。 激光加工装置包括波长转换装置。

公开(公告)号：US08187507B2

公开(公告)日：2012-05-29

申请号：US12514836

申请日：2007-11-14

申请人： Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Masashi Yoshimura ,  Minoru Kawahara ,  Yasuo Kitaoka ,  Masanori Morishita

发明人： Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Masashi Yoshimura ,  Minoru Kawahara ,  Yasuo Kitaoka ,  Masanori Morishita

IPC分类号： H01B1/06 ,  C01G15/00

CPC分类号： C30B29/406 ,  C30B19/02 ,  Y10T117/1024

摘要： A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.

摘要翻译： 提供一种能够实现防止成核和高质量非极性表面生长中的至少一种的GaN晶体的制造方法。 本发明的制造方法是在至少含有碱金属和镓的熔融物中制造GaN晶体的方法，包括调整熔融物的碳含量的调整工序，以及使镓和氮的反应工序 互相反应。 根据本发明的制造方法，能够防止成核，如图1所示， 如图4所示，可以生长非极性表面。

公开(公告)号：US08038794B2

公开(公告)日：2011-10-18

申请号：US11628253

申请日：2005-04-15

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC分类号： C30B29/38

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  H01L33/0075 ,  H01L33/32

摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

公开(公告)号：US07459023B2

公开(公告)日：2008-12-02

申请号：US11590930

申请日：2006-11-01

申请人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

发明人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

IPC分类号： C30B25/12

CPC分类号： C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

公开(公告)号：US07361220B2

公开(公告)日：2008-04-22

申请号：US10809033

申请日：2004-03-25

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masashi Yoshimura ,  Yasunori Kai ,  Mamoru Imade ,  Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masashi Yoshimura ,  Yasunori Kai ,  Mamoru Imade ,  Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12

CPC分类号： C30B23/02 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.

摘要翻译： 本发明提供一种制造氮化镓单晶的方法，其可以抑制氮化镓的分解并提高升华方法中的生产效率。 根据制造方法，将用于氮化镓（GaN）单晶的材料（GaN粉末）放置在坩埚内部，通过加热升华或蒸发，并在衬底表面上冷却以再次返回到固体，使得镓 氮化物单晶生长在衬底表面上。 单晶的生长在压力下进行。 压力优选为5atm以上（5×1.013×10 -5 Pa）。 单晶优选在含有NH 3和N 2 N的混合气体气氛中生长。

公开(公告)号：US07142354B2

公开(公告)日：2006-11-28

申请号：US10511170

申请日：2001-12-12

申请人： Tetsuo Kojima ,  Susumu Konno ,  Shuichi Fujikawa ,  Koji Yasui ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Tetsuo Kojima ,  Susumu Konno ,  Shuichi Fujikawa ,  Koji Yasui ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： G02F1/35 ,  H01S3/108

CPC分类号： G02F1/3501 ,  G02F2001/3505

摘要： In a wavelength converting method, an ambient that is in contact with a surface of a non-linear optical crystal from which wavelength-converted light is outputted is a gas that is lower in content of nitrogen than air. A wavelength converting device includes a device for controlling the ambient in contact with a surface of the non-linear optical crystal from which the wavelength-converted light is outputted so the ambient is lower in nitrogen than air. A laser machining device includes the wavelength converting device.

摘要翻译： 在波长转换方法中，与输出波长转换光的非线性光学晶体的表面接触的环境是氮含量低于空气的气体。 波长转换装置包括用于控制与非线性光学晶体的表面接触的环境的装置，从该波长转换光输出波长转换的光，使得氮气中的环境比空气低。 激光加工装置包括波长转换装置。

公开(公告)号：US20050153471A1

公开(公告)日：2005-07-14

申请号：US10999338

申请日：2004-11-29

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

IPC分类号： C30B29/38 ,  C30B11/00 ,  C30B11/12 ,  C30B19/02 ,  C30B29/40 ,  H01L21/208 ,  H01L21/00

CPC分类号： C30B29/403 ,  C30B11/00 ,  C30B11/04 ,  C30B29/406

摘要： There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

摘要翻译： 提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。 此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中 熔体的表面和基板的表面设定为至多50mm。