Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
    4.
    发明授权
    Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same 失效
    可用作III族氮化物衬底的III族氮化物晶体及其制造方法和包括其的半导体器件

    公开(公告)号:US07309534B2

    公开(公告)日:2007-12-18

    申请号:US10856467

    申请日:2004-05-27

    IPC分类号: B32B9/00 B32B18/00 C30B9/00

    摘要: The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured highly efficiently, and are useful and usable as a substrate that is used in semiconductor manufacturing processes. The method of manufacturing Group III nitride crystals includes: forming a first layer made of a semiconductor that is expressed by a composition formula of AlsGatIn1-s-tN (where 0≦s≦1, 0≦t≦1, and s+t≦1); forming a second layer by bringing the surface of the first layer into contact with a melt in an atmosphere including nitrogen, wherein the second layer includes greater defects in a crystal structure, such as a dislocation density for example, than those of the first layer, and the melt includes alkali metal and at least one Group III element selected from the group consisting of gallium, aluminum, and indium; and forming a third layer through crystal growth in the melt in an atmosphere including nitrogen, wherein the third layer is made of a semiconductor that is expressed by a composition formula of AluGavIn1-u-vN (where 0≦u≦1, 0≦v≦1, and u+v≦1), and the third layer has less defects in a crystal structure, such as a dislocation density for example, than those of the second layer.

    摘要翻译: 本发明提供一种制造高品质的III族氮化物晶体的方法,其制造高效率,并且可用和用作半导体制造工艺中使用的基板。 制造III族氮化物晶体的方法包括:形成由半导体制成的第一层,其由下式的组成式表示: (其中0 <= s <= 1,0 <= t <= 1,s + t <= 1); 通过使第一层的表面在包括氮气的气氛中与熔体接触而形成第二层,其中第二层在诸如位错密度的晶体结构中具有比第一层更大的缺陷, 并且熔体包括碱金属和至少一种选自镓,铝和铟的III族元素; 以及通过在包括氮气的气氛中在熔体中的晶体生长形成第三层,其中第三层由以下组成式表示的半导体制成: 在其中0 <= u <= 1,0 <= v <= 1和u + v <= 1)中,并且第三层在一个 晶体结构,例如位错密度比第二层的位错密度。

    Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same
    5.
    发明授权
    Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same 有权
    通过该方法制造GaN晶体和GaN晶体基板,GaN晶体和GaN晶体基板的方法以及包括该GaN晶体的GaN晶体和GaN晶体基板

    公开(公告)号:US07288152B2

    公开(公告)日:2007-10-30

    申请号:US10884386

    申请日:2004-07-02

    IPC分类号: C30B11/14

    摘要: The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere containing nitrogen, gallium and the nitrogen are allowed to react with each other to generate GaN crystals in a mixed melt of the gallium and sodium, the gallium and the nitrogen are allowed to react with each other under a pressurizing condition that exceeds atmospheric pressure, and pressure P1 (atm(×1.013×105 Pa)) of the pressurizing condition is set so as to satisfy the condition that is expressed by the following conditional expression (I): P≦P1

    摘要翻译: 本发明提供了一种制造方法,其中可以在低压和低温的温和条件下制造高质量的GaN晶体和GaN晶体衬底。 在制造GaN晶体的方法中,其中在含有氮气的气体气氛中,允许镓和氮彼此反应以在镓和钠的混合熔体中产生GaN晶体,使镓和氮反应 在超过大气压的加压条件下彼此相对地设定加压条件的压力P 1(atm(x1.013×10 Pa)),以满足由 (I):<?in-line-formula description =“In-line formula”end =“lead”?> P <= P 1 <(P + 45),(I) 公式描述=“在线公式”end =“tail”?>其中在表达式(I)中,P(atm(x1.013×10 Pa))表示最小压力, 在混合熔体的温度T℃下产生GaN晶体。

    METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME
    7.
    发明申请
    METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME 审中-公开
    生产碳化硅(SiC)晶体和碳化硅(SiC)晶体的方法

    公开(公告)号:US20090205561A1

    公开(公告)日:2009-08-20

    申请号:US12305313

    申请日:2007-06-26

    IPC分类号: C30B9/10

    CPC分类号: C30B29/36 C01B32/956 C30B9/10

    摘要: A production method is provided that enables to produce a large-sized bulk silicon carbide (SiC) crystal of high quality at low cost. A large-sized bulk silicon carbide (SiC) crystal of high quality can be obtained at a lower temperature by reacting silicon (Si) and carbon (C) produced from a lithium carbide such as dilithium acetylide (Li2C2) with each other in an alkali metal melt and thereby producing or growing a silicon carbide (SiC) crystal. FIG. 17 shows a high-resolution TEM (HR-TEM) image of the resultant 2H—SiC crystal. A preferable lithium carbide is dilithium acetylide (Li2C2). A preferable alkali metal melt is a melt of lithium alone.

    摘要翻译: 提供一种能够以低成本制造高质量的大尺寸体积碳化硅(SiC)晶体的制造方法。 通过使硅(Si)与碳化锂(Li 2 C 2)等碳化锂制成的碳(C)在碱中相互反应,可以在较低的温度下获得高质量的大尺寸体积碳化硅(SiC) 金属熔化,从而生产或生长碳化硅(SiC)晶体。 图。 图17示出了所得2H-SiC晶体的高分辨率TEM(HR-TEM)图像。 优选的碳化锂是二乙炔锂(Li2C2)。 优选的碱金属熔体是单独的锂的熔体。

    Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
    10.
    发明授权
    Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby 失效
    生产III族元素氮化物晶体的方法,其中使用的制造装置以及由此制造的半导体元件

    公开(公告)号:US07794539B2

    公开(公告)日:2010-09-14

    申请号:US10599501

    申请日:2005-03-31

    摘要: A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.

    摘要翻译: 一种生产III族元素的氮化物晶体的方法,其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体,其中使用的制造装置以及使用该方法和装置得到的半导体元件 被提供。 该方法是生产III族元素氮化物晶体的方法,其包括使含有III族元素,氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程 含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。 该方法还包括在晶体生长过程之前,制备材料制备方法,该方法是在含氮气体的气氛中,将环境温度和环境压力中的至少一种设定为 高于设定为晶体生长过程的条件,使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。 根据本发明的方法可以通过使用例如图1所示的制造装置来执行。 7。