公开(公告)号：US20050225837A1

公开(公告)日：2005-10-13

申请号：US10511170

申请日：2001-12-12

申请人： Tetsuo Kojima ,  Susumu Konno ,  Shuichi Fujikawa ,  Koji Yasui ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Tetsuo Kojima ,  Susumu Konno ,  Shuichi Fujikawa ,  Koji Yasui ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： G02F1/35 ,  G02F2/02

CPC分类号： G02F1/3501 ,  G02F2001/3505

摘要： In a wavelength converting method, an ambient that is in contact with a surface of a non-linear optical crystal from which wavelength-converted light is outputted is a gas that is lower in content of nitrogen than air. A wavelength converting device includes a device for controlling the ambient in contact with a surface of the non-linear optical crystal from which the wavelength-converted light is outputted so the ambient is lower in nitrogen than air. A laser machining device includes the wavelength converting device.

摘要翻译： 在波长转换方法中，与输出波长转换光的非线性光学晶体的表面接触的环境是氮含量低于空气的气体。 波长转换装置包括用于控制与非线性光学晶体的表面接触的环境的装置，从该波长转换光输出波长转换的光，使得氮气中的环境比空气低。 激光加工装置包括波长转换装置。

公开(公告)号：US07142354B2

公开(公告)日：2006-11-28

申请号：US10511170

申请日：2001-12-12

申请人： Tetsuo Kojima ,  Susumu Konno ,  Shuichi Fujikawa ,  Koji Yasui ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Tetsuo Kojima ,  Susumu Konno ,  Shuichi Fujikawa ,  Koji Yasui ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： G02F1/35 ,  H01S3/108

CPC分类号： G02F1/3501 ,  G02F2001/3505

摘要： In a wavelength converting method, an ambient that is in contact with a surface of a non-linear optical crystal from which wavelength-converted light is outputted is a gas that is lower in content of nitrogen than air. A wavelength converting device includes a device for controlling the ambient in contact with a surface of the non-linear optical crystal from which the wavelength-converted light is outputted so the ambient is lower in nitrogen than air. A laser machining device includes the wavelength converting device.

摘要翻译： 在波长转换方法中，与输出波长转换光的非线性光学晶体的表面接触的环境是氮含量低于空气的气体。 波长转换装置包括用于控制与非线性光学晶体的表面接触的环境的装置，从该波长转换光输出波长转换的光，使得氮气中的环境比空气低。 激光加工装置包括波长转换装置。

公开(公告)号：US07948673B2

公开(公告)日：2011-05-24

申请号：US12233174

申请日：2008-09-18

申请人： Masashi Yoshimura ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

发明人： Masashi Yoshimura ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

IPC分类号： G02F1/35 ,  H01S3/10

CPC分类号： G02F1/37 ,  G02F1/3551 ,  G02F2001/3505 ,  G02F2001/354

摘要： An optical wavelength conversion element includes a cesium-lithium-borate crystal processed into a 10-mm long optical element cut in an orientation that allows a fourth harmonic of a Nd:YAG laser to be generated. A transmittance (Ta) at 3589 cm−1 in an infrared transmission spectrum of the optical element is used as an index that indicates a content of water impurities in the crystal and is independent of a polarization direction. An actual measurement of the transmittance Ta is at least 1%, without taking into account loss at an optically polished surface of the crystal. A wavelength conversion device, a ultraviolet laser irradiation apparatus, a laser processing system, and a method of manufacturing an optical wavelength conversion element are also described.

摘要翻译： 光波长转换元件包括加工成允许产生Nd：YAG激光器的四次谐波的取向切割的10mm长的光学元件的铯 - 硼酸锂晶体。 光学元件的红外透射光谱中的3589cm -1处的透射率（Ta）被用作指示晶体中的水杂质含量并且与偏振方向无关的指标。 透射率Ta的实际测量值至少为1％，而不考虑在晶体的光学抛光表面处的损耗。 还描述了波长转换装置，紫外激光照射装置，激光加工系统和制造光波长转换元件的方法。

公开(公告)号：US20090080475A1

公开(公告)日：2009-03-26

申请号：US12233174

申请日：2008-09-18

申请人： Masashi YOSHIMURA ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

发明人： Masashi YOSHIMURA ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

IPC分类号： H01S3/10 ,  G02F1/35 ,  C01B35/10

CPC分类号： G02F1/37 ,  G02F1/3551 ,  G02F2001/3505 ,  G02F2001/354

摘要： An optical wavelength conversion element includes a cesium-lithium-borate crystal processed into a 10-mm long optical element cut in an orientation that allows a fourth harmonic of a Nd:YAG laser to be generated. A transmittance (Ta) at 3589 cm−1 in an infrared transmission spectrum of the optical element is used as an index that indicates a content of water impurities in the crystal and is independent of a polarization direction. An actual measurement of the transmittance Ta is at least 1%, without taking into account loss at an optically polished surface of the crystal. A wavelength conversion device, a ultraviolet laser irradiation apparatus, a laser processing system, and a method of manufacturing an optical wavelength conversion element are also described.

摘要翻译： 光波长转换元件包括加工成允许产生Nd：YAG激光器的四次谐波的取向切割的10mm长的光学元件的铯 - 硼酸锂晶体。 光学元件的红外透射光谱中的3589cm -1处的透射率（Ta）被用作指示晶体中的水杂质含量并且与偏振方向无关的指标。 透射率Ta的实际测量值至少为1％，而不考虑在晶体的光学抛光表面处的损耗。 还描述了波长转换装置，紫外激光照射装置，激光加工系统和制造光波长转换元件的方法。

公开(公告)号：US20080283968A1

公开(公告)日：2008-11-20

申请号：US11579645

申请日：2005-03-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC分类号： H01L29/20 ,  C03B9/00

CPC分类号： C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

摘要翻译： 一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质 提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。 因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

公开(公告)号：US20080022921A1

公开(公告)日：2008-01-31

申请号：US11628253

申请日：2005-04-15

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC分类号： C30B29/38 ,  C30B11/06 ,  C30B9/10 ,  H01L33/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  H01L33/0075 ,  H01L33/32

摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

公开(公告)号：US07247203B2

公开(公告)日：2007-07-24

申请号：US10525809

申请日：2003-08-25

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Hiroaki Adachi ,  Hiroshi Masuhara ,  Youichiroh Hosokawa ,  Kazufumi Takano

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Hiroaki Adachi ,  Hiroshi Masuhara ,  Youichiroh Hosokawa ,  Kazufumi Takano

IPC分类号： C30B29/54

CPC分类号： C30B7/00 ,  C30B29/58 ,  Y10S117/904

摘要： The present invention relates to a process for producing high-quality crystals of protein or organic substances easily and efficiently. A solution of protein or an organic substance is prepared and then is cooled slowly to be supersaturated to a low degree. This supersaturated solution is irradiated with a femtosecond laser 10. A local explosion phenomenon occurs at the focal point of the laser and thereby a crystalline nucleus is generated. A high-quality crystal is obtained when a crystal is grown on the crystalline nucleus over a long period of time. The femtosecond laser to be used herein can be a titanium:sapphire laser having a wavelength of 800 nm, a duration of 120 fs, a frequency of 1 kHz, and an output of 400 mW.

摘要翻译： 本发明涉及容易高效地生产蛋白质或有机物质的优质晶体的方法。 制备蛋白质或有机物质的溶液，然后缓慢冷却至低饱和度。 用飞秒激光10照射该过饱和溶液。 在激光的焦点发生局部爆炸现象，从而产生晶核。 当晶体长时间在晶核上生长时，获得高质量的晶体。 本文使用的飞秒激光可以是波长为800nm，持续时间为120fs，频率为1kHz，输出为400mW的钛：蓝宝石激光。

公开(公告)号：US07006539B1

公开(公告)日：2006-02-28

申请号：US09762100

申请日：1999-08-04

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： H01S3/10

CPC分类号： G02F1/3551

摘要： There is provided a nonlinear optical crystal which is presented by the formula: K2Al2B2O7. This nonlinear optical crystal is a vacuum ultraviolet light generating nonlinear optical crystal which is easy to grow and of high practical use. There are also provided a wavelength conversion method using this crystal, and an element and a wavelength conversion apparatus for use in the method.

摘要翻译： 提供了一种非线性光学晶体，其由下列公式表示：K 2 2 Al 2 B 2 N 2 O 7 。 这种非线性光学晶体是一种容易生长和高实用性的真空紫外线发生非线性光学晶体。 还提供了使用该晶体的波长转换方法以及用于该方法的元件和波长转换装置。

公开(公告)号：US06843849B1

公开(公告)日：2005-01-18

申请号：US09979505

申请日：2000-05-22

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B17/00 ,  C30B29/22 ,  C30B29/30

CPC分类号： C30B15/00 ,  C30B15/305 ,  C30B17/00 ,  C30B29/10 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068

摘要： In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.

摘要翻译： 在通过使晶种（4）与在坩埚（1）中加热熔融的原料熔体（2）接触的方法中，在设置在坩埚（1）中的叶片构件（5）或挡板构件 坩埚（1）中的原料熔融物（2）和通过使坩埚（1）旋转而拉起来生长单晶，从而以高品质从高粘度原料熔体（2）生长包括CLBO的各种单晶 和高性能晶体。

公开(公告)号：US07288151B2

公开(公告)日：2007-10-30

申请号：US10999338

申请日：2004-11-29

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

IPC分类号： C30B11/14

CPC分类号： C30B29/403 ,  C30B11/00 ,  C30B11/04 ,  C30B29/406

摘要： There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

摘要翻译： 提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。 此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中 熔体的表面和基板的表面设定为至多50mm。