公开(公告)号：US07655531B2

公开(公告)日：2010-02-02

申请号：US12292980

申请日：2008-12-02

申请人： Naoya Sashida ,  Tatsuya Yokota

发明人： Naoya Sashida ,  Tatsuya Yokota

IPC分类号： H01L21/20

CPC分类号： H01L21/76834 ,  H01L21/7682 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

摘要翻译： 半导体器件包括形成在半导体衬底10上的电容器，包括下电极32，形成在下电极上的电介质膜34和形成在电介质膜上的上电极36，形成在半导体衬底上的第一绝缘膜42和 电容器，形成在第一绝缘膜上并电连接到电容器的第一互连48，用于防止在第一绝缘膜上形成的覆盖第一互连的氢的扩散的第一防氢膜50，第二绝缘膜58 形成在第一氢扩散防止膜上并且具有表面平坦化，形成在第二绝缘膜上的第三绝缘膜62，形成在第三绝缘膜上的第二互连70b和用于防止扩散的第二防扩散膜72 形成在第三绝缘膜上的氢，覆盖第二绝缘膜 连接。 由于位于电容器上方的第二氢扩散防止膜被平坦化，所以可靠地防止电介质膜被氢还原。

公开(公告)号：US20090130815A1

公开(公告)日：2009-05-21

申请号：US12292980

申请日：2008-12-02

申请人： Naoya Sashida ,  Tatsuya Yokota

发明人： Naoya Sashida ,  Tatsuya Yokota

IPC分类号： H01L21/02

CPC分类号： H01L21/76834 ,  H01L21/7682 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

公开(公告)号：US06509593B2

公开(公告)日：2003-01-21

申请号：US09750069

申请日：2000-12-29

申请人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

发明人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L27/11507 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

摘要翻译： 通过在绝缘膜上形成接触孔而形成的半导体器件，其通过相同的步骤在电容器的下电极上覆盖MOSFET的源极/漏极和存储单元区域中的电容器，然后将插头填充到触点中 孔，然后在电容器的上电极上形成接触孔。 因此，可以提供具有铁电电容器的半导体器件，其能够通过抑制在晶体管上形成的电容器的损坏来简化与电容器的上部电极和下部电极的各个布线连接结构。

公开(公告)号：US08708569B2

公开(公告)日：2014-04-29

申请号：US13345931

申请日：2012-01-09

申请人： Tatsuya Yokota

发明人： Tatsuya Yokota

IPC分类号： F16C13/00 ,  F16C33/58

CPC分类号： B60B27/0005 ,  B60B27/0094 ,  B60B2380/76 ,  B60Y2200/11 ,  F16C19/186 ,  F16C33/585 ,  F16C2240/30 ,  F16C2240/80 ,  F16C2326/02 ,  Y02T10/86

摘要： In a wheel rolling bearing device, where a pitch diameter of the inner-row ball set is D1 and a pitch diameter of the outer-row ball set is D2, D1 and D2 are set so as to satisfy the relationship “D1

摘要翻译： 在内滚珠组的节圆直径为D1，外排球的节径为D2的车轮滚动轴承装置中，D1和D2被设定为满足关系“D1

公开(公告)号：US07886441B2

公开(公告)日：2011-02-15

申请号：US11791515

申请日：2005-11-22

申请人： Tomomasa Kubo ,  Tatsuya Yokota

发明人： Tomomasa Kubo ,  Tatsuya Yokota

IPC分类号： B21K1/76 ,  B21D53/10

CPC分类号： B60B27/0094 ,  B60B7/0013 ,  B60B7/0026 ,  B60B7/066 ,  B60B27/0005 ,  B60B27/0084 ,  F16C19/186 ,  F16C33/586 ,  F16C41/008 ,  F16C43/04 ,  F16C2326/02 ,  Y10T29/49636 ,  Y10T29/49679 ,  Y10T29/4968 ,  Y10T82/2502 ,  Y10T403/49

摘要： A method of manufacturing a rolling bearing device for a road-wheel that includes an outer ring, an inner ring member, rolling elements arranged between the outer ring and the inner ring member, and a shaft body having the inner ring member mounted to an outer periphery includes a caulking step of radially outwardly bending and deforming a cylindrical portion formed at one end side of the shaft body by using a predetermined caulking pressure acting from the one end side toward other end side of the shaft body, thereby forming a caulked portion caulked to an axial end face of the inner ring member. Identification information indicating an existence of the caulked portion so formed is die-stamped on a visually observable surface at the other end side of the shaft body by using the caulking pressure during the caulking step.

摘要翻译： 一种制造用于车轮的滚动轴承装置的方法，所述滚动轴承装置包括外圈，内圈构件，布置在所述外圈和所述内圈构件之间的滚动元件，以及轴体，所述轴体具有安装到外圈 周边包括通过使用从轴体的一端侧朝向另一端侧作用的规定的铆接压力使形成在轴体的一端侧的圆筒部向径向外侧弯曲变形的铆接工序，从而形成铆接部 到内圈构件的轴向端面。 表示这样形成的铆接部的存在的识别信息，在铆接工序中使用铆接压力，在轴体的另一端侧的视觉上观察的表面进行冲压。

公开(公告)号：US07832940B2

公开(公告)日：2010-11-16

申请号：US11791907

申请日：2005-11-29

申请人： Syunichi Matsui ,  Tatsuya Yokota

发明人： Syunichi Matsui ,  Tatsuya Yokota

IPC分类号： F16C35/063 ,  B21D39/04

CPC分类号： B21K25/00 ,  B21J9/025 ,  B60B27/0084 ,  F16C19/186 ,  F16C35/063 ,  F16C43/04 ,  F16C2326/02 ,  Y10T29/497

摘要： An inner ring is fitted on one-end side of an inner shaft and fixed to the inner shaft by caulking. During the caulking, the inner shaft is supported by a caulking receiving jig. A receiving section to which the jig is in contact is provided at a position near the one-end side of the inner shaft, for example, at a position nearer to the inner ring than a raceway section formed on the outer periphery on the other side of the inner shaft. As a result, a caulking load acting from a caulking jig on the inner shaft plastically deforms only a desired portion.

摘要翻译： 内圈安装在内轴的一端侧，通过铆接固定在内轴上。 在铆接期间，内轴由铆接接收夹具支撑。 夹具接触的接收部设置在靠近内轴的一端侧的位置处，例如位于比形成在另一侧的外周上的滚道部更靠近内圈的位置 的内轴。 结果，从铆接夹具在内轴上作用的填缝载荷仅塑塑地变形所需的部分。

公开(公告)号：US20100210369A1

公开(公告)日：2010-08-19

申请号：US12704279

申请日：2010-02-11

申请人： Yoshinori Masuda ,  Tatsuya Yokota ,  Nobuyuki Seo ,  Takanobu Murakami ,  Tsuyoshi Okumura ,  Yoshito Takada

发明人： Yoshinori Masuda ,  Tatsuya Yokota ,  Nobuyuki Seo ,  Takanobu Murakami ,  Tsuyoshi Okumura ,  Yoshito Takada

IPC分类号： F16C3/02 ,  B21D22/26 ,  B21J5/06

CPC分类号： B21K1/12 ,  B21K1/40 ,  B60B27/00 ,  F16C33/64 ,  F16C2240/60 ,  F16C2326/02

摘要： A wheel bearing device of the invention includes a flanged shaft member that includes a shaft portion to which a rolling bearing is assembled, a fitting shaft portion that is formed on one end side of the shaft portion and that is fitted to a center hole of a wheel, and a plurality of flange portions that extend radially outward on an outer peripheral surface located between the shaft portion and the fitting shaft portion and each of which has a bolt hole in which a hub bolt for fastening the wheel is arranged. Each flange portion is formed by side extrusion when a forged recess is formed at a center of an end surface of the fitting shaft portion by cold forging.

摘要翻译： 本发明的车轮轴承装置包括：凸缘轴构件，其包括轴组件的滚动轴承的轴部，形成在所述轴部的一端侧并且嵌合于所述轴部的中心孔的嵌合轴部; 轮和多个凸缘部，其在位于所述轴部和所述嵌合轴部之间的外周面上径向向外延伸，并且每个所述凸缘部具有螺栓孔，所述螺栓孔配置有用于紧固所述车轮的轮毂螺栓。 当通过冷锻在配合轴部的端面的中心形成锻造凹部时，通过侧挤压形成每个凸缘部。

公开(公告)号：US07297558B2

公开(公告)日：2007-11-20

申请号：US11106580

申请日：2005-04-15

申请人： Yasutaka Ozaki ,  Tatsuya Yokota ,  Nobutaka Ohyagi

发明人： Yasutaka Ozaki ,  Tatsuya Yokota ,  Nobutaka Ohyagi

IPC分类号： H01L21/00

CPC分类号： H01L27/11502 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/3144 ,  H01L21/76829 ,  H01L21/76834 ,  H01L27/11507

摘要： A W plug (24) is formed and a W oxidation preventing barrier metal film (25) is formed thereon. After that, an SiON film (27) thinner than the W oxidation preventing barrier metal film (25) is formed and Ar sputter etching is performed on the SiON film (27). As a result, the shape of the surface of the SiON film (27) becomes gentler and deep trenches disappear. Next, an SiON film (28) is formed on the whole surface. A voidless W oxidation preventing insulating film (29) is composed of the SiON (28) film and the SiON film (27).

摘要翻译： 形成W插头（24），并在其上形成W氧化防止阻挡金属膜（25）。 之后，形成比W氧化防止阻挡金属膜（25）薄的SiON膜（27），对SiON膜（27）进行Ar溅射蚀刻。 结果，SiON膜（27）的表面的形状变得较平缓，深的沟槽消失。 接下来，在整个表面上形成SiON膜（28）。 无孔W氧化防止绝缘膜（29）由SiON（28）膜和SiON膜（27）构成。

公开(公告)号：US20070063241A1

公开(公告)日：2007-03-22

申请号：US11540537

申请日：2006-10-02

申请人： Naoya Sashida ,  Tatsuya Yokota

发明人： Naoya Sashida ,  Tatsuya Yokota

IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L21/76834 ,  H01L21/7682 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

摘要翻译： 半导体器件包括形成在半导体衬底10上的电容器，包括下电极32，形成在下电极上的电介质膜34和形成在电介质膜上的上电极36，形成在半导体衬底上的第一绝缘膜42和 电容器，形成在第一绝缘膜上并电连接到电容器的第一互连48，用于防止在第一绝缘膜上形成的覆盖第一互连的氢的扩散的第一防氢膜50，第二绝缘膜58 形成在第一氢扩散防止膜上并具有表面平坦化，形成在第二绝缘膜上的第三绝缘膜62，形成在第三绝缘膜上的第二互连70b和用于防止扩散的第二氢扩散防止膜72 的第三绝缘膜上形成的氢，覆盖第二绝缘膜 互连。 由于位于电容器上方的第二氢扩散防止膜被平坦化，所以可靠地防止电介质膜被氢还原。

公开(公告)号：US06913970B2

公开(公告)日：2005-07-05

申请号：US10303752

申请日：2002-11-26

申请人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

发明人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

IPC分类号： H01L23/522 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L21/20

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L27/11507 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

摘要翻译： 通过在绝缘膜上形成接触孔而形成的半导体器件，其通过相同的步骤在电容器的下电极上覆盖MOSFET的源/漏和存储单元区域中的电容器，然后将插头填充到接触孔 ，然后在电容器的上电极上形成接触孔。 因此，可以提供具有铁电电容器的半导体器件，其能够通过抑制在晶体管上形成的电容器的损坏来简化与电容器的上部电极和下部电极的各个布线连接结构。