公开(公告)号：US20080020495A1

公开(公告)日：2008-01-24

申请号：US11840514

申请日：2007-08-17

申请人： Tatehito Usui ,  Motohiko Yoshigai ,  Kazuhiro Jyouo ,  Tetsuo Ono

发明人： Tatehito Usui ,  Motohiko Yoshigai ,  Kazuhiro Jyouo ,  Tetsuo Ono

IPC分类号： H01L21/00

CPC分类号： H01J37/32935 ,  H01L21/67069 ,  H01L21/67253

摘要： A semiconductor fabricating method including: placing the semiconductor wafer having a film thereon inside of a chamber; generating plasma; detecting a quantity of interference lights for each of at least two wavelengths obtained from a surface of the wafer for a predetermined time period during the etching of the wafer; detecting a first time point at which the detected quantity of interference lights for one of the two wavelengths becomes a maximum and a second time point at which the detected quantity of interference lights for the other wavelength becomes a minimum; determining a state of etching based on a result of comparing a predetermined value with an interval between the first and second time points, wherein both time points are detected by using outputs of a detector for detecting a quantity of the interference lights; and controlling etching in accordance with the determining.

摘要翻译： 一种半导体制造方法，包括：将其上具有膜的半导体晶片放置在室内; 产生等离子体 在晶片的蚀刻期间，在从晶片表面获得的每个至少两个波长的预定时间段内检测干涉光量; 检测所述检测到的两个波长中的一个波长的干扰光的检测量成为最大的第一时间点和所述其他波长的所检测的干涉光量成为最小的第二时间点; 基于将预定值与第一和第二时间点之间的间隔进行比较的结果来确定蚀刻状态，其中通过使用用于检测干涉光量的检测器的输出来检测两个时间点; 以及根据该确定来控制蚀刻。

公开(公告)号：US20060077397A1

公开(公告)日：2006-04-13

申请号：US11289394

申请日：2005-11-30

申请人： Tatehito Usui ,  Motohiko Yoshigai ,  Kazuhiro Jyouo ,  Tetsuo Ono

发明人： Tatehito Usui ,  Motohiko Yoshigai ,  Kazuhiro Jyouo ,  Tetsuo Ono

IPC分类号： G01B11/02

CPC分类号： H01J37/32935 ,  H01L21/67069 ,  H01L21/67253

摘要： A semiconductor fabricating apparatus for etching a semiconductor wafer, which is placed in a chamber and which has a multiple-layer film composed of a first film formed on a surface thereof and a second film formed on the first film, using plasma generated in the chamber. The semiconductor fabricating apparatus includes a light detector that detects a change in an amount of light with a plurality of wavelengths obtained from the surface of the wafer for a predetermined time during which the second film is etched, and a detection unit that detects a thickness of the first film based on a specific waveform obtained from an output of the detector.

摘要翻译： 一种用于蚀刻半导体晶片的半导体制造装置，该半导体制造装置被放置在腔室中，并且具有由在其表面上形成的第一膜构成的多层膜和在第一膜上形成的第二膜， 。 半导体制造装置包括：光检测器，其在第二膜被蚀刻的预定时间内检测从晶片的表面获得的多个波长的光量的变化;以及检测单元，其检测厚度 基于从检测器的输出获得的特定波形的第一胶片。

公开(公告)号：US06759253B2

公开(公告)日：2004-07-06

申请号：US09788629

申请日：2001-02-16

申请人： Tatehito Usui ,  Tetsuo Ono ,  Ryoji Nishio ,  Kazue Takahashi ,  Nobuyuki Mise

发明人： Tatehito Usui ,  Tetsuo Ono ,  Ryoji Nishio ,  Kazue Takahashi ,  Nobuyuki Mise

IPC分类号： H01L21302

CPC分类号： H01L22/34 ,  C23C16/50 ,  C23C16/52 ,  G01N21/73 ,  H01J37/32935 ,  H01L21/67253 ,  H01L2924/0002 ,  H01L2924/00

摘要： The intensity of the light emitted from the light-emitting diode on wafer is measured and then the potential difference between the terminals of the light-emitting element, and the plasma current flowing thereinto are derived from measured light intensity. Since the use of a camera enables non-contact measurement of emitted light intensity, the lead-in terminals for lead wires that are always required in conventional probing methods become unnecessary. In addition, since the target wafer does not require lead wire connection, wafers can be changed in the same way as performed for etching.

摘要翻译： 测量从晶片上的发光二极管发射的光的强度，然后从测量的光强度导出发光元件的端子与其中流动的等离子体电流之间的电位差。 由于使用相机能够非接触地测量发射的光强度，所以在常规探测方法中始终需要的导线的引入端子变得不必要。 此外，由于目标晶片不需要引线连接，因此可以以与蚀刻相同的方式来改变晶片。

公开(公告)号：US6033481A

公开(公告)日：2000-03-07

申请号：US225971

申请日：1999-01-06

申请人： Ken'etsu Yokogawa ,  Tetsuo Ono ,  Kazunori Tsujimoto ,  Naoshi Itabashi ,  Masahito Mori ,  Shinichi Tachi ,  Keizo Suzuki

发明人： Ken'etsu Yokogawa ,  Tetsuo Ono ,  Kazunori Tsujimoto ,  Naoshi Itabashi ,  Masahito Mori ,  Shinichi Tachi ,  Keizo Suzuki

IPC分类号： C23C16/00 ,  H01J37/32

CPC分类号： H01J37/3222 ,  H01J37/32082 ,  H01J37/32678 ,  H01J2237/3341

摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.

摘要翻译： 公开了能够在大范围内产生均匀的等离子体并能够实现高蚀刻选择性和高纵横比的微小加工的功耗降低的等离子体处理装置。 利用由超高频带和磁场中的电磁波引起的电子回旋共振现象，在容纳加工样品的真空容器中产生高密度等离子体，并且使用该等离子体蚀刻处理样品的表面。 用于产生等离子体的超高频带中的电磁波从由石墨或硅组成的平面导电板辐射，该导电板与被处理样品的表面相对地设置在真空容器内部的空间中。 通过在超高频带中使用电磁波可以产生低解离度的高密度等离子体，结果可以提高蚀刻反应的可控性。 此外，通过用于辐射电磁波的平面导电板的表面与等离子体之间的反应可以增加蚀刻中有效的自由基。

公开(公告)号：US5895586A

公开(公告)日：1999-04-20

申请号：US737520

申请日：1996-11-12

申请人： Tetsunori Kaji ,  Saburo Kanai ,  Satoshi Ito ,  Ryoji Hamasaki ,  Tetsuo Ono ,  Tatehito Usui ,  Kazue Takahashi ,  Kazutami Tago

发明人： Tetsunori Kaji ,  Saburo Kanai ,  Satoshi Ito ,  Ryoji Hamasaki ,  Tetsuo Ono ,  Tatehito Usui ,  Kazue Takahashi ,  Kazutami Tago

IPC分类号： H01J37/32 ,  B23K10/00

CPC分类号： H01J37/32467 ,  H01J37/32477 ,  Y10S156/914

摘要： There are provided a plasma processing apparatus and a plasma processing method which are suitable for processing a processed substance using a gas plasma containing fluorine atoms.Structural materials used for a high vacuum processing chamber of a plasma processing apparatus are aluminum, aluminum having an anodic oxide coating processed surface and a material having a film of aluminum oxide or a film having aluminum oxide as a main component. A part or the whole of the inner surfaces of the processing chamber is constructed with a pre-fluorinated material.When plasma processing of a processed substance is performed using a gas plasma containing fluorine atoms in the processing chamber having the pre-fluorinated inner surfaces, time-varying processing characteristic can be suppressed.

摘要翻译： PCT No.PCT / JP95 / 00935 Sec。 371日期：1996年11月12日 102（e）日期1996年11月12日PCT提交1995年5月17日PCT公布。 出版物WO95 / 31822 日期：1995年11月23日提供了适用于使用含有氟原子的气体等离子体处理物质的等离子体处理装置和等离子体处理方法。 用于等离子体处理装置的高真空处理室的结构材料是具有阳极氧化物涂覆处理表面的铝，具有氧化铝膜或具有氧化铝作为主要成分的膜的材料。 处理室的内表面的一部分或全部由预氟化材料构成。 使用具有预氟化内表面的处理室中含有氟原子的气体等离子体进行处理物质的等离子体处理时，可以抑制时变处理特性。

公开(公告)号：US5012984A

公开(公告)日：1991-05-07

申请号：US488557

申请日：1990-03-05

申请人： Hiroshi Ishikawa ,  Kazuo Koyata ,  Tetsuo Ono ,  Takuo Motizuki ,  Masayuki Sakuta ,  Show Onodera ,  Hiroshi Yanagioka ,  Yoshihisa Abe

发明人： Hiroshi Ishikawa ,  Kazuo Koyata ,  Tetsuo Ono ,  Takuo Motizuki ,  Masayuki Sakuta ,  Show Onodera ,  Hiroshi Yanagioka ,  Yoshihisa Abe

IPC分类号： B65G53/30 ,  B01F17/00 ,  C10L1/32 ,  C10L10/18

CPC分类号： C10L1/32

摘要： A process for the production of a coal-water mixture, which comprises dry-pulverizing coal under supply of hot air to form pulverized coal in which the proportion of particles having a particle size smaller than 200 .mu.m is at least 90%, in which the proportion of particles having a particle size smaller than 10 .mu.m is 10 to 60%, and making the pulverized coal and the hot air sucked in a mixed-air water jet stream.

公开(公告)号：US4886425A

公开(公告)日：1989-12-12

申请号：US173712

申请日：1988-03-25

申请人： Tsutomu Itahana ,  Tetsuo Ono ,  Tamio Sugimoto

发明人： Tsutomu Itahana ,  Tetsuo Ono ,  Tamio Sugimoto

IPC分类号： F04C28/26 ,  F04B49/00 ,  F04B49/02 ,  F04C18/02 ,  F04C18/04 ,  F04C28/16 ,  F04D27/00

CPC分类号： F04C28/16

摘要： A capacity control device controls an amount of fluid bypassed from a compression chamber formed between contacts of a stationary and revolving spiral elements into a suction chamber by an actuator. The capacity control device provides a feedback mechanism in which a relation between a suction pressure of the compressor and a pressure of actuating the actuator is a function of the first degree and controls the suction pressure to be constant. A capacity control amount of the compressor can be determined only by the suction pressure of the compressor independent of other variation factors. Accordingly, the minimum suction pressure can be restricted strictly and frost control can be attained by the compressor itself.

摘要翻译： 容量控制装置通过致动器控制从形成在静止螺旋元件和旋转螺旋元件的触点之间的压缩室旁路的流体到吸入室中的量。 容量控制装置提供反馈机构，其中压缩机的吸入压力和致动致动器的压力之间的关系是第一度的函数，并且将吸入压力控制为恒定。 仅通过压缩机的吸入压力可以确定压缩机的容量控制量，而与其他变化因素无关。 因此，可以严格限制最小吸入压力，并且可以通过压缩机本身实现霜控制。

公开(公告)号：US4879493A

公开(公告)日：1989-11-07

申请号：US126789

申请日：1987-11-30

申请人： Hiromistu Mastuno ,  Seiichi Murayama ,  Tetsuo Ono ,  Yoshio Watanabe

发明人： Hiromistu Mastuno ,  Seiichi Murayama ,  Tetsuo Ono ,  Yoshio Watanabe

IPC分类号： H01J61/067 ,  H01J61/16 ,  H01J61/72 ,  H01J61/76

CPC分类号： H01J61/72

摘要： Disclosed is a low-pressure discharge lamp comprising a discharge vessel defining an airtight space therein, at least one pair of electrodes disposed in the discharge vessel, and discharge gases enclosed in the discharge vessel, one of the electrodes which acts as an anode being located in a zone of negative glow.

摘要翻译： 公开了一种低压放电灯，包括在其中限定气密空间的放电室，设置在放电容器中的至少一对电极，以及包围在放电容器中的放电气体，位于阳极中的一个电极 在一个负面发光的区域。

公开(公告)号：US4666380A

公开(公告)日：1987-05-19

申请号：US745393

申请日：1985-06-14

申请人： Takahisa Hirano ,  Shoji Fukami ,  Yasuharu Maruiwa ,  Takuyuki Itoh ,  Tamio Sugimoto ,  Tetsuo Ono ,  Masatoshi Mukai

发明人： Takahisa Hirano ,  Shoji Fukami ,  Yasuharu Maruiwa ,  Takuyuki Itoh ,  Tamio Sugimoto ,  Tetsuo Ono ,  Masatoshi Mukai

IPC分类号： F01C1/02 ,  F01C1/04 ,  B23P9/04 ,  B23P15/00 ,  F01C21/08

CPC分类号： F01C1/0246 ,  Y10T29/4924

摘要： A scroll type fluid machine comprising a pair of mutually engaged scroll members each including a side plate and a spiral lap uprightly disposed on an inside surface of the side plate; when the scroll members are relatively resolved in solar motion relationship, a fluid volume in sealed chambers defined by the pair of engaged scroll members being varied, so that a pressure of the fluid in the sealed chambers is thereby varied in order to discharge a gas therefrom, characterized by constituting so that stress may not concentrate at stress concentration portions of the scroll members, i.e., at corners of inner end base portions of the laps and the inside surfaces of the side plates in an eddy center section of the scroll members; and a method for forming the scroll members which permit improving productivity, characterized by forming, at the stress concentration portion of each scroll member, a round having a relatively large curvature radius which is enough to provide it with fatigue strength, and then finishing a relatively small round by means of a cutter for finish working.

摘要翻译： 一种涡旋式流体机械，包括一对相互接合的涡旋构件，每个涡旋构件包括竖直地设置在侧板的内表面上的侧板和螺旋叠层; 当涡旋构件在太阳运动关系中相对分辨时，由一对接合的涡旋构件限定的密封室中的流体体积变化，从而改变密封室中的流体的压力以便从其中排出气体 其特征在于，在所述涡旋构件的涡流中心部中，在所述涡卷构件的所述圈的内端基部和所述侧板的内表面的拐角处，应力集中部分不能集中， 以及用于形成能够提高生产率的涡旋构件的方法，其特征在于，在每个涡旋构件的应力集中部分处形成具有相对大的曲率半径的圆形，其足以使其具有疲劳强度，然后完成相对 通过切割机小圆做完工作。

公开(公告)号：US08801951B2

公开(公告)日：2014-08-12

申请号：US13210490

申请日：2011-08-16

申请人： Yoshiharu Inoue ,  Michikazu Morimoto ,  Tsuyoshi Matsumoto ,  Tetsuo Ono ,  Tadamitsu Kanekiyo ,  Mamoru Yakushiji ,  Masakazu Miyaji

发明人： Yoshiharu Inoue ,  Michikazu Morimoto ,  Tsuyoshi Matsumoto ,  Tetsuo Ono ,  Tadamitsu Kanekiyo ,  Mamoru Yakushiji ,  Masakazu Miyaji

IPC分类号： C03C15/00

CPC分类号： H01L21/31116

摘要： In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.

摘要翻译： 在等离子体处理方法中，通过在施加射频电力的状态下，通过从引入到处理室中的沉积气体产生等离子体并将待处理物体暴露于等离子体，对待处理对象进行蚀刻， 在处理室的内壁上的沉积膜通过重复将被处理物暴露于等离子体的第一期间和第二期间，使被处理室的暴露于 等离子体和蚀刻速率比第一阶段低。 因此，能够抑制由于加工对象物的加工张数而增加的粒子。