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    METHOD OF FORMING PATTERN
    11.
    发明申请
    METHOD OF FORMING PATTERN 有权
    形成图案的方法

    公开(公告)号：US20130209941A1

    公开(公告)日：2013-08-15

    申请号：US13759669

    申请日：2013-02-05

    Applicant: TOKYO OHKA KOGYO CO., LTD ,  TOKYO ELECTRON LIMITED

    Inventor： Naoto Motoike ,  Katsumi Ohmori ,  Toshiaki Hato ,  Hidetami Yaegashi ,  Kenichi Oyama

    IPC: G03F7/20

    CPC classification number: G03F7/2026 ,  G03F7/0045 ,  G03F7/405

    Abstract: A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. Thr resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.

    Abstract translation: 一种形成图案的方法，包括将抗蚀剂组合物施加到基底以形成抗蚀剂膜，然后对抗蚀剂膜进行曝光和显影，从而形成含有抗蚀剂膜的第一图案; 在所述第一图案和所述基板的表面上形成SiO 2膜; 对SiO 2进行蚀刻，使得SiO 2膜仅保留在第一图案的侧壁部分上; 并且去除第一图案，从而形成包含SiO 2膜的第二图案。 Thr抗蚀剂组合物含有在酸的作用下在显影液中显示出改变的溶解性的基础成分和暴露时产生酸的酸发生剂成分，所述基体成分含有含有具有酸分解性基团的结构单元的树脂成分， 通过酸的作用增加了极性，没有多环基团。

    Method of forming mask
    12.
    发明授权
    Method of forming mask 有权

    公开(公告)号：US11467497B2

    公开(公告)日：2022-10-11

    申请号：US16542396

    申请日：2019-08-16

    Applicant: Tokyo Electron Limited

    Inventor： Hidetami Yaegashi

    IPC: G03F7/09 ,  G03F7/26 ,  G03F7/004

    Abstract: A method of forming a mask includes forming a base film containing a treatment agent on an object, forming a photosensitive organic film on the base film, forming an infiltrated portion by infiltrating the treatment agent into a lower portion of the photosensitive organic film, selectively exposing the photosensitive organic film to form a first region soluble in an alkaline solution and a second region insoluble in the alkaline solution, forming a third region insoluble in the alkaline solution in the infiltrated portion in the first region by causing a reaction between the first region and the treatment agent, developing the photosensitive organic film to remove a fourth region that is in the first region and other than the third region while leaving intact the second region and the third region, and etching the photosensitive organic film to remove one of the second region and the third region.

    Pattern forming method
    13.
    发明授权
    Pattern forming method 有权

    公开(公告)号：US10366888B2

    公开(公告)日：2019-07-30

    申请号：US16008392

    申请日：2018-06-14

    Applicant: Tokyo Electron Limited ,  TOKYO OHKA KOGYO CO., LTD.

    Inventor： Kazuki Yamada ,  Masatoshi Yamato ,  Hidetami Yaegashi ,  Yoshitaka Komuro ,  Takehiro Seshimo ,  Katsumi Ohmori

    IPC: H01L21/302 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311

    Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

    Pattern forming method
    14.
    发明授权
    Pattern forming method 有权

    公开(公告)号：US10074557B2

    公开(公告)日：2018-09-11

    申请号：US15602307

    申请日：2017-05-23

    Applicant: Tokyo Electron Limited

    Inventor： Hidetami Yaegashi

    IPC: H01L21/768 ,  H01L21/033 ,  H01L21/02

    CPC classification number: H01L21/76802 ,  H01L21/0237 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76879

    Abstract: A first film having a repetitive line pattern is formed on an under film. A second film is formed on a side surface of the first film. The second film has an etching selectivity different from that of the first film. A third film is formed on an upper surface and a side surface of the second film. The third film has an etching selectivity different from those of the first and second films. A resist pattern with an opening is formed on the third film. A recess that exposes upper surfaces of the first, second and third films is formed by etching the third film by using the resist pattern as an etching mask. An upper surface of the under film is exposed by etching the first and third films. A through hole that penetrates through the under film is formed by etching the under film.

    Method of forming pattern
    15.
    发明授权
    Method of forming pattern 有权
    形成图案的方法

    公开(公告)号：US09459535B2

    公开(公告)日：2016-10-04

    申请号：US13759669

    申请日：2013-02-05

    Applicant: Tokyo Ohka Kogyo Co., Ltd. ,  Tokyo Electron Limited

    Inventor： Naoto Motoike ,  Katsumi Ohmori ,  Toshiaki Hato ,  Hidetami Yaegashi ,  Kenichi Oyama

    IPC: G03F7/26 ,  G03F7/20 ,  G03F7/004 ,  G03F7/40

    CPC classification number: G03F7/2026 ,  G03F7/0045 ,  G03F7/405

    Abstract: A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. The resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.

    Abstract translation: 一种形成图案的方法，包括将抗蚀剂组合物施加到基底以形成抗蚀剂膜，然后对抗蚀剂膜进行曝光和显影，从而形成含有抗蚀剂膜的第一图案; 在所述第一图案和所述基板的表面上形成SiO 2膜; 对SiO 2进行蚀刻，使得SiO 2膜仅保留在第一图案的侧壁部分上; 并且去除第一图案，从而形成包含SiO 2膜的第二图案。 抗蚀剂组合物含有在酸的作用下在显影液中显示出改变的溶解性的基质成分和暴露时产生酸的酸产生剂组分，所述基质成分含有含有具有酸分解性基团的结构单元的树脂成分， 通过酸的作用增加了极性，没有多环基团。

    USE OF TOPOGRAPHY TO DIRECT ASSEMBLY OF BLOCK COPOLYMERS IN GRAPHO-EPITAXIAL APPLICATIONS
    17.
    发明申请
    USE OF TOPOGRAPHY TO DIRECT ASSEMBLY OF BLOCK COPOLYMERS IN GRAPHO-EPITAXIAL APPLICATIONS 有权
    使用地层学方法直接组装嵌段共聚物在GRAPHO-外源应用中的应用

    公开(公告)号：US20150111387A1

    公开(公告)日：2015-04-23

    申请号：US14518699

    申请日：2014-10-20

    Applicant: Tokyo Electron Limited

    Inventor： Mark H. Somervell ,  Makoto Muramatsu ,  Benjamen M. Rathsack ,  Tadatoshi Tomita ,  Hisashi Genjima ,  Hidetami Yaegashi ,  Kenichi Oyama

    IPC: H01L21/308 ,  H01L21/027

    CPC classification number: G03F7/0002 ,  G03F7/091 ,  G03F7/165 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0273 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139

    Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

    Abstract translation: 提供了一种在衬底上形成图案形貌的方法。 衬底具有形成在顶部的构成现有形貌的特征，并且围绕暴露的形貌形成用于定向自组装（DSA）的模板。 除了该方法之外，曝光的模板表面经化学处理。 在一个实施方案中，用含氢还原化学处理表面以将表面改变为较少氧化的状态。 在另一个实施方案中，表面涂覆有嵌段共聚物（BCP）的第一相，使表面比涂覆前比第一相更有吸引力。 然后用BCP填充模板以覆盖暴露的形貌，然后在模板内对BCP进行退火以驱动与地形对准的自组装。 开发退火的BCP暴露了立即覆盖地形的DSA模式。

    Pattern forming method
    18.
    发明授权
    Pattern forming method 有权

    公开(公告)号：US10539876B2

    公开(公告)日：2020-01-21

    申请号：US15381321

    申请日：2016-12-16

    Applicant: Tokyo Electron Limited

    Inventor： Hidetami Yaegashi

    IPC: G03F7/30

    Abstract: Provided is a method for forming a hole pattern in a resist film. The method includes forming a resist film on a workpiece; exposing the resist film using a bright field mask; removing an unexposed portion of the resist film by supplying a first developer to the resist film and performing a negative development after the exposing the resist film; modifying a sidewall portion of the resist film after the removing the unexposed portion of the resist film; and removing an exposed portion of the resist film by supplying a second developer to the resist film and performing a positive development after the modifying the sidewall portion of the resist film. The modifying the sidewall portion of the resist film is a processing of reducing solubility of the sidewall portion of the resist film in the second developer.

    PATTERN FORMING METHOD
    20.
    发明申请
    PATTERN FORMING METHOD 审中-公开

    公开(公告)号：US20170236720A1

    公开(公告)日：2017-08-17

    申请号：US15430640

    申请日：2017-02-13

    Applicant: Tokyo Electron Limited

    Inventor： Hidetami Yaegashi

    IPC: H01L21/311 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/027

    Abstract: Disclosed is a pattern forming method including: forming an acrylic resin layer on an underlayer; forming an intermediate layer on the acrylic resin layer; forming a patterned EUV resist layer on the intermediate layer; forming a pattern on the acrylic resin layer by etching the intermediate layer and the acrylic resin layer with the EUV resist layer as an etching mask; removing the EUV resist layer and the intermediate layer after the pattern is formed on the acrylic resin layer; and smoothing a surface of the acrylic resin layer after the EUV resist layer and the intermediate layer are removed.

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