公开(公告)号：US20190309420A1

公开(公告)日：2019-10-10

申请号：US16371818

申请日：2019-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masami OIKAWA ,  Ken ITABASHI ,  Satoshi TAKAGI ,  Masahisa WATANABE ,  Keisuke FUJITA ,  Tatsuya MIYAHARA ,  Hiroyuki HAYASHI

IPC: C23C16/455 ,  H01L21/673 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: There is provided a substrate processing apparatus including: a processing container accommodating a boat on which a substrate is mounted; and an injector that extends in a vertical direction along an inner wall of the processing container in a vicinity of the processing container and has a plurality of gas holes in a longitudinal direction, wherein the plurality of gas holes is oriented toward the inner wall in the vicinity of the processing container.

公开(公告)号：US20220384146A1

公开(公告)日：2022-12-01

申请号：US17804379

申请日：2022-05-27

Applicant: Tokyo Electron Limited

Inventor： Syouji YAMAGISHI ,  Hiroki EHARA ,  Hiroyuki HAYASHI ,  Jun NAKAGOMI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a process container, a power supply configured to supply radio frequency or microwave power for generating plasma in the process container, a plurality of gas nozzles, each having a gas flow passage therein, and a plurality of protrusions formed integrally with a ceiling wall and/or a sidewall that defines the process container, the plurality of protrusions protruding from the ceiling wall and/or the sidewall. Each of the plurality of protrusions has a gas hole at a leading end of the protrusion. The ceiling wall and/or the sidewall has recesses in which the plurality of gas nozzles is arranged, respectively, such that the gas flow passage of each of the plurality of gas nozzles communicates with the gas hole of each of the plurality of protrusions.

公开(公告)号：US20220364228A1

公开(公告)日：2022-11-17

申请号：US17753004

申请日：2020-08-06

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI ,  Tatsuya MIYAHARA ,  Keisuke FUJITA ,  Masami OIKAWA ,  Sena FUJITA

IPC: C23C16/44 ,  H01L21/02 ,  B08B5/00 ,  B08B9/08 ,  B08B13/00

Abstract: A cleaning method according to an aspect of the present disclosure includes: supplying a halogen-containing gas that does not contain fluorine to an interior of a processing container that is capable of being exhausted via an exhaust pipe to perform a cleaning; and supplying a fluorine-containing gas to at least one of the interior of the processing container and an interior of the exhaust pipe to perform the cleaning after the supplying the halogen-containing gas to perform the cleaning.

公开(公告)号：US20220010430A1

公开(公告)日：2022-01-13

申请号：US17295003

申请日：2019-11-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki HAYASHI ,  Ryosaku OTA

IPC: C23C16/455 ,  C23C16/52 ,  H01J37/32

Abstract: An apparatus includes a venting mechanism for venting a treatment vessel, a gas supply path including an upstream flow path to which a gas is supplied from a gas source, and multiple branch paths formed by branching a downstream side of the upstream flow path into multiple paths, each branch path being connected to the treatment vessel. The apparatus further includes first valves respectively provided in the branch paths to divert the gas to the branch paths, each first valve having a variable opening degree without being closed completely, a second valve provided in the upstream flow path to supply the gas or shut off the supply of the gas to a downstream side thereof, a pressure sensor that detects a pressure in the treatment vessel, and an abnormality detector that detects an abnormality in the downstream side of the second valve based on the detected pressure.

公开(公告)号：US20200058504A1

公开(公告)日：2020-02-20

申请号：US16540347

申请日：2019-08-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rui KANEMURA ,  Hiroyuki HAYASHI

IPC: H01L21/033 ,  H01L21/3205 ,  H01L21/3213 ,  C23C16/56 ,  C23C16/458 ,  C23C16/40 ,  C23C16/34

Abstract: A method of selectively forming a silicon film on an upper portion of each of protruded portions formed on a substrate, which includes: supplying a first silicon-containing gas to the substrate and forming a first silicon film so that a film thickness of the first silicon film becomes thicker in the upper portion rather than in a lower portion of a sidewall of each protruded portion; subsequently, supplying an etching gas to the substrate and removing the first silicon film on the sidewall of each protruded portion while leaving the first silicon film on an upper surface of each protruded portion; and subsequently, supplying a second silicon-containing gas to the substrate and forming a second silicon film so that a film thickness of the second silicon film becomes thicker in the upper portion rather than in the lower portion of a sidewall of each protruded portion.

公开(公告)号：US20190043719A1

公开(公告)日：2019-02-07

申请号：US16046222

申请日：2018-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI ,  Hiroyuki HAYASHI ,  Hsiulin TSAI

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52

Abstract: A method of forming a silicon film in a recess formed in a target substrate includes: preparing a target substrate having a recess in which a plurality of different bases is exposed; forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature; and forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature.

公开(公告)号：US20150129586A1

公开(公告)日：2015-05-14

申请号：US14603910

申请日：2015-01-23

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Jun YAMASHITA ,  Seokhyoung HONG ,  Kouji SHIMOMURA ,  Hiroyuki HAYASHI

IPC: H05B6/80 ,  H01L21/324

CPC classification number: H05B6/806 ,  H01L21/324

Abstract: A microwave heating apparatus includes a processing chamber having a top wall, a bottom wall and a sidewall, and configured to accommodate an object to be processed; a microwave introducing unit configured to generate a microwave for heating the object and introduce the microwave into the processing chamber; a plurality of supporting members configured to make contact with the object and support the object in the processing chamber. The microwave heating apparatus further includes a dielectric member provided between the object supported by the supporting members and the bottom wall while being apart from the object.

Abstract translation: 微波加热装置包括具有顶壁，底壁和侧壁的处理室，并且被配置为容纳被处理物体; 微波引入单元，被配置为产生用于加热所述物体并将所述微波引入所述处理室的微波; 多个支撑构件，其构造成与所述物体接触并将所述物体支撑在所述处理室中。 微波加热装置还包括设置在由支撑构件支撑的物体和与该物体分离的底壁之间的电介质构件。

公开(公告)号：US20140291318A1

公开(公告)日：2014-10-02

申请号：US14219981

申请日：2014-03-19

Applicant: Tokyo Electron Limited

Inventor： Kouji SHIMOMURA ,  Junichi KITAGAWA ,  Nobuhiko YAMAMOTO ,  Hiroyuki HAYASHI ,  Sumi TANAKA

IPC: H05B6/64

CPC classification number: H05B6/642 ,  H05B6/645 ,  H05B6/80

Abstract: A microwave heating apparatus is provided to perform heat treatment on a substrate to be processed by irradiating a microwave to the substrate in a processing chamber. The microwave heating apparatus includes a supporting table configured to support the substrate in the processing chamber, a microwave introducing unit configured to introduce the microwave into the processing chamber, a coolant channel formed in the supporting table, and a coolant supply source configured to supply a coolant to the coolant channel. At least a surface of the supporting table which supports the substrate is made of a material in which a product of a relative dielectric constant and a dielectric loss angle is smaller than 0.005, and the coolant supplied from the coolant supply source is liquid having no electrical polarity.

Abstract translation: 提供一种微波加热装置，用于通过在处理室中向基板照射微波，对要加工的基板进行热处理。 微波加热装置包括：支撑台，其被构造成在处理室中支撑基板;微波引入单元，被配置为将微波引入处理室;形成在支撑台中的冷却剂通道;以及冷却剂供给源， 冷却剂到冷却剂通道。 支撑基板的支撑台的至少一个表面由相对介电常数和介电损耗角的乘积小于0.005的材料制成，并且从冷却剂供应源供应的冷却剂是不具有电的液体 极性。