公开(公告)号：US10192758B2

公开(公告)日：2019-01-29

申请号：US15713800

申请日：2017-09-25

Applicant: Tokyo Electron Limited

Inventor： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC: H01L21/02 ,  H01L21/67

Abstract: A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

公开(公告)号：US11569086B2

公开(公告)日：2023-01-31

申请号：US17070951

申请日：2020-10-15

Applicant: Tokyo Electron Limited

Inventor： Kazuki Kosai ,  Kazuyoshi Shinohara

IPC: H01L21/02 ,  C11D7/08 ,  H01L21/67 ,  B08B3/04

Abstract: A substrate processing apparatus includes a substrate processing part that supplies a processing liquid from a processing liquid supply part to a mounted substrate to execute liquid processing, a liquid drainage part that has a recovery channel connected to a storage part that stores the processing liquid and drains the processing liquid used for the liquid processing, and a control unit executes a processing recipe for the liquid processing and a cleaning recipe for cleaning the substrate processing part and the liquid drainage part. The control unit executes a cleaning operation for supplying a cleaning liquid from a cleaning liquid supply part to clean the substrate processing part and the liquid drainage part and subsequently executes a return operation for supplying the processing liquid from the processing liquid supply part to replace the cleaning liquid attached to the substrate processing part and the liquid drainage part with the processing liquid.

公开(公告)号：US11551935B2

公开(公告)日：2023-01-10

申请号：US16826504

申请日：2020-03-23

Applicant: Tokyo Electron Limited

Inventor： Takashi Nakazawa ,  Kazuyoshi Shinohara

IPC: H01L21/3213 ,  H01L21/306 ,  H01L21/67

Abstract: A substrate processing method includes: holding a substrate having a processing target surface and an opposite surface which is opposite to the processing target surface; preheating a center portion of the opposite surface of the substrate; after the preheating, ejecting a sulfuric acid hydrogen peroxide mixture (SPM) to a peripheral edge portion of the processing target surface of the substrate; and after the ejecting, moving an ejection position of the SPM from the peripheral edge portion of the processing target surface to a center portion of the substrate.

公开(公告)号：US20200381245A1

公开(公告)日：2020-12-03

申请号：US16881306

申请日：2020-05-22

Applicant: Tokyo Electron Limited

Inventor： Hirofumi Takeguchi ,  Kazuyoshi Shinohara ,  Takahisa Otsuka ,  Suguen Lee

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  B08B3/10 ,  B08B3/08

Abstract: A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.

公开(公告)号：US20200321217A1

公开(公告)日：2020-10-08

申请号：US16826504

申请日：2020-03-23

Applicant: Tokyo Electron Limited

Inventor： Takashi Nakazawa ,  Kazuyoshi Shinohara

IPC: H01L21/306 ,  H01L21/67

Abstract: A substrate processing method includes: holding a substrate having a processing target surface and an opposite surface which is opposite to the processing target surface; preheating a center portion of the opposite surface of the substrate; after the preheating, ejecting a sulfuric acid hydrogen peroxide mixture (SPM) to a peripheral edge portion of the processing target surface of the substrate; and after the ejecting, moving an ejection position of the SPM from the peripheral edge portion of the processing target surface to a center portion of the substrate.

公开(公告)号：US20140360536A1

公开(公告)日：2014-12-11

申请号：US14296813

申请日：2014-06-05

Applicant: Tokyo Electron Limited

Inventor： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6715

Abstract: A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

Abstract translation: 可以提高处理基板的生产量，并且可以降低其运行成本。 用处理液处理基板3并干燥基板3的基板处理装置1包括：基板旋转装置22，被配置为旋转基板3; 将处理液朝向基板3排出的处理液排出部13; 置换液体排出单元14，被配置为在衬底3上被处理液取代的取代液体相对于衬底3相对移动而朝向衬底3排出; 以及惰性气体排出单元15，其构造成在与替代液体排出单元14的移动方向不同的方向上移动，同时从基板3的上方沿倾斜方向朝向基板3的周边部分排出惰性气体。

公开(公告)号：US20140137902A1

公开(公告)日：2014-05-22

申请号：US14084839

申请日：2013-11-20

Applicant: Tokyo Electron Limited

Inventor： Kazuhiro Aiura ,  Norihiro Ito ,  Hidetoshi Nakao ,  Kazuyoshi Shinohara ,  Satoru Tanaka ,  Yuki Yoshida ,  Meitoku Aibara

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/68735

Abstract: A substrate processing apparatus includes a rotary cup that is provided at a substrate holding unit to surround a substrate held thereon and to be rotated along with the substrate holding unit, and configured to guide a processing liquid dispersed from the substrate; and an outer cup that is provided around the rotary cup with a gap therebetween and configured to collect the guided processing liquid by the rotary cup. Further, a height of an upper end of the rotary cup is higher than that of the outer cup. Furthermore, an outward protrusion protruded outwards in a radial direction thereof and extended along a circumference thereof is provided at an upper end portion of an outer surface of the rotary cup, and the outward protrusion blocks mist of the processing liquid dispersed from the gap between the rotary cup and the outer cup toward a space above the substrate.

Abstract translation: 一种基板处理装置，包括旋转杯，该旋转杯设置在基板保持单元处，以围绕保持在其上的基板并与基板保持单元一起旋转，并且构造成引导从基板分散的处理液; 以及外杯，其设置在旋转杯周围，其间具有间隙，并且构造成通过旋转杯收集被引导的处理液。 此外，旋转杯的上端的高度高于外杯的高度。 此外，在旋转杯的外表面的上端部设置有沿其径向向外突出并且沿着其周向延伸的向外突出部，并且向外突出部阻挡从位于旋转杯之间的间隙分散的处理液的雾 旋转杯和外杯朝向衬底上方的空间。

公开(公告)号：US11676835B2

公开(公告)日：2023-06-13

申请号：US17905551

申请日：2021-02-22

Applicant: Tokyo Electron Limited

Inventor： Hiroki Sakurai ,  Kazuki Kosai ,  Kazuyoshi Shinohara

IPC: B08B3/02 ,  B08B7/04 ,  H01L21/67 ,  B08B13/00

CPC classification number: H01L21/67253 ,  B08B3/022 ,  B08B13/00 ,  H01L21/67023

Abstract: A method includes: supplying a processing liquid to a center position of a substrate surface; shifting a supply position of the processing liquid from the center position to a first eccentric position; holding the supply position of the processing liquid at the first eccentric position and supplying a substitute liquid to a second eccentric position; shifting the supply position of the processing liquid in a direction away from the center position, and shifting a supply position of the substitute liquid to the center position; and supplying the processing liquid to the first eccentric position at a first flow rate, and reducing the flow rate of the processing liquid to a second flow rate after the supply position of the processing liquid starts to be shifted from the first eccentric position in the direction and until the supply position of the substitute liquid reaches the center position.

公开(公告)号：US10832902B2

公开(公告)日：2020-11-10

申请号：US15375295

申请日：2016-12-12

Applicant: Tokyo Electron Limited

Inventor： Yoshinori Ikeda ,  Yuki Taniguchi ,  Kazuyoshi Shinohara

IPC: H01L21/02 ,  H01L21/67 ,  B08B3/04

Abstract: Disclosed is a substrate processing apparatus including: a holding unit that holds a substrate; a processing liquid supply unit that supplies a processing liquid to the substrate; a cup that includes a bottom portion, a tubular peripheral wall portion erected on the bottom portion, a liquid receiving portion provided above the peripheral wall portion and configured to receive the processing liquid scattered from the substrate, and a groove portion formed in a circumferential direction on an upper surface of the peripheral wall portion, and surrounds the holding unit; and a cleaning liquid supply unit that supplies a cleaning liquid to the upper surface of the peripheral wall portion.

公开(公告)号：US20190006206A1

公开(公告)日：2019-01-03

申请号：US16019773

申请日：2018-06-27

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Higashi ,  Takahisa Otsuka ,  Kazuyoshi Shinohara ,  Takashi Nakazawa ,  Seiya Fujimoto ,  Yuichi Douki

IPC: H01L21/67 ,  H01L21/3065

Abstract: The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.