公开(公告)号：US06440591B1

公开(公告)日：2002-08-27

申请号：US08646630

申请日：1996-05-08

申请人： Hironori Matsunaga ,  Takeshi Kijima ,  Sakiko Satoh ,  Masayoshi Koba

发明人： Hironori Matsunaga ,  Takeshi Kijima ,  Sakiko Satoh ,  Masayoshi Koba

IPC分类号： B32B900

CPC分类号： H01L28/56

摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a metal oxide buffer layer on a substrate, forming a first crystalline ferroelectric thin film thereon by means of a MOCVD method and forming a second ferroelectric thin film with a film thickness thicker than that of the first ferroelectric thin film thereon by means of the MOCVD method at a temperature lower than that of the first ferroelectric thin film. This producing method makes it possible to produce a ferroelectric thin film, where its surface is dense and even, a leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.

摘要翻译： 通过在基板上形成金属氧化物缓冲层的制造方法，通过MOCVD法在其上形成第一结晶性强电介质薄膜，并形成膜厚度比第二强铁电体薄膜的铁电薄膜被覆基板 在其上的第一铁电薄膜的温度低于第一铁电薄膜的温度，通过MOCVD方法。 该制造方法使得可以在较低的温度下制备其表面致密甚至漏电流性能优异并且显示足够大的剩余自发极化的铁电薄膜。

公开(公告)号：US5593495A

公开(公告)日：1997-01-14

申请号：US435135

申请日：1995-05-05

申请人： Yoshiyuki Masuda ,  Ryusuke Kita ,  Hisako Arai ,  Noboru Ohtani ,  Masayoshi Koba

发明人： Yoshiyuki Masuda ,  Ryusuke Kita ,  Hisako Arai ,  Noboru Ohtani ,  Masayoshi Koba

IPC分类号： C01B13/14 ,  C01G21/00 ,  C01G23/00 ,  C23C18/12 ,  C30B5/00 ,  H01B3/00 ,  H01L37/02 ,  H01L41/39 ,  C30B1/10

CPC分类号： C23C18/1225 ,  C23C18/1216 ,  C23C18/1254 ,  C30B29/32 ,  C30B5/00

摘要： In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.

摘要翻译： 在金属氧化物电介质薄膜的制造方法中，在第一工序中合成溶胶状态的前体溶液。 该前体溶液由待制造的复合金属 - 氧化物电介质的材料的组成元素组成。 在第二步中，通过旋涂将该前体溶液制成薄膜。 在第三步骤中，将该溶胶状的薄膜干燥，将其转变为干燥凝胶的薄膜。 此后，在第四步骤中，对干燥凝胶薄膜进行热分解，除去干凝胶薄膜中的有机物质，同时使该凝胶态薄膜结晶。

公开(公告)号：US5576564A

公开(公告)日：1996-11-19

申请号：US365542

申请日：1994-12-28

申请人： Sakiko Satoh ,  Hironori Matsunaga ,  Kenji Nakanishi ,  Yoshiyuki Masuda ,  Masayoshi Koba

发明人： Sakiko Satoh ,  Hironori Matsunaga ,  Kenji Nakanishi ,  Yoshiyuki Masuda ,  Masayoshi Koba

IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L27/10 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L41/18 ,  H01L49/02 ,  H01L29/76

CPC分类号： H01L28/56 ,  H01L28/60 ,  H01L29/516 ,  H01L28/55

摘要： The present invention provides a substrate providing a ferroelectric crystal thin film which includes an electrode formed on a semiconductor single crystal substrate and a ferroelectric crystal thin film of Bi.sub.4 Ti.sub.3 O.sub.12 formed on the electrode through the intermediary of a buffer layer.

摘要翻译： 本发明提供一种提供铁电晶体薄膜的衬底，其包括形成在半导体单晶衬底上的电极和通过缓冲层形成在电极上的Bi 4 Ti 3 O 12的铁电晶体薄膜。

公开(公告)号：US5491410A

公开(公告)日：1996-02-13

申请号：US993241

申请日：1992-12-17

申请人： Hideo Nojima ,  Hidetaka Shintaku ,  Masaya Nagata ,  Manabu Fujimoto ,  Masayoshi Koba

发明人： Hideo Nojima ,  Hidetaka Shintaku ,  Masaya Nagata ,  Manabu Fujimoto ,  Masayoshi Koba

IPC分类号： G01R33/00 ,  G01R33/035 ,  G01R33/09 ,  H01L39/22 ,  G01R33/06

CPC分类号： G01R33/00 ,  G01R33/0352 ,  Y10S505/845

摘要： A superconductive magnetoresistor has a substrate, a ceramic superconductive film which is formed on one face of the substrate, ferromagnetic elements for focusing an external magnetic field, and an insulating film. One of the ferromagnetic elements is integrally combined with the other face of the substrate. The other of the ferromagnetic elements is combined with the ceramic superconductive film thorough the insulating film.

摘要翻译： 超导磁电阻器具有衬底，形成在衬底的一个面上的陶瓷超导膜，用于聚焦外部磁场的铁磁元件和绝缘膜。 铁磁元件中的一个与基板的另一面一体地组合。 另外的铁磁元件通过绝缘膜与陶瓷超导膜组合。

公开(公告)号：US5352978A

公开(公告)日：1994-10-04

申请号：US34877

申请日：1993-03-19

申请人： Hideo Nojima ,  Hidetaka Shintaku ,  Masayoshi Koba

发明人： Hideo Nojima ,  Hidetaka Shintaku ,  Masayoshi Koba

IPC分类号： G01R33/035 ,  G01R33/06 ,  H01L39/12 ,  H01L39/16

CPC分类号： G01R33/0352 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/845

摘要： An apparatus of sensing a magnetic field using a ceramic superconductor magneto-resistive element having a superconductor magneto resistive effect of non linear characteristic against the applied magnetic field, there is provided a coil for applying a bias magnetic field to the magneto-resistive element, the coil is connected to a feed back power source for supplying current for holding the output of the magneto-resistive element constant value, whereby the applied magnetic field is measured by the current supplied to the coil.There is disclosed also a device for sensing a magnetic field using a magneto-resistive element comprising a superconductor member having weak coupling grain boundaries, said device comprising means for applying A.C. bias magnetic field to said element, and means for taking out an output voltage of the element generated by application of the bias magnetic field as the signal representing the intensity of the applied magnetic field.

摘要翻译： 使用具有针对所施加的磁场的非线性特性的超导体磁阻效应的陶瓷超导体磁阻元件感测磁场的装置，提供用于向磁阻元件施加偏置磁场的线圈， 线圈连接到用于提供电流的反馈电源，用于保持磁阻元件的输出恒定值，由此施加的磁场由提供给线圈的电流测量。 还公开了一种用于使用包括具有弱耦合晶界的超导体部件的磁阻元件来感测磁场的装置，所述装置包括用于向所述元件施加AC偏置磁场的装置，以及用于取出 通过施加偏置磁场产生的元件作为表示所施加磁场强度的信号。

公开(公告)号：US4207617A

公开(公告)日：1980-06-10

申请号：US919960

申请日：1978-06-28

申请人： Shuhei Yasuda ,  Toshihiro Ohba ,  Chugi Suzuki ,  Masayoshi Koba ,  Jun Kudo

发明人： Shuhei Yasuda ,  Toshihiro Ohba ,  Chugi Suzuki ,  Masayoshi Koba ,  Jun Kudo

IPC分类号： H01J31/12 ,  G11C11/42 ,  G11C13/04

CPC分类号： H01J31/122

摘要： An EL display panel comprising an electroluminescent element made of, for example, a ZnS:Mn layer sandwiched between a pair of dielectric layers exhibits hysteresis properties within light intensity versus applied voltage characteristics. A front electrode is formed on one of the dielectric layers, and a rear electrode is formed on the other dielectric layer in order to apply a sustaining voltage signal across the electroluminescent element for maintaining the memoried display information. An electron beam is applied to a desired position on the EL display panel through the rear electrode at a time when the sustaining voltage signal bears the zero level in order to erase the memoried information. The memoried display information is electrically read out by detecting a polarization relaxation current which flows through a memoried display position when an electron beam is applied thereto.

摘要翻译： 包括由例​​如夹在一对电介质层之间的ZnS：Mn层构成的电致发光元件的EL显示面板在光强度与施加的电压特性之间显示滞后特性。 前电极形成在一个电介质层上，并且在另一个电介质层上形成一个后电极，以便在电致发光元件上施加维持电压信号以保持记忆显示信息。 当维持电压信号为零电平时，电子束通过后电极施加到EL显示面板上的期望位置，以便擦除存储的信息。 当向其施加电子束时，通过检测流过存储显示位置的偏振弛豫电流来电读出存储的显示信息。

公开(公告)号：US06232167B1

公开(公告)日：2001-05-15

申请号：US08968938

申请日：1997-11-12

申请人： Sakiko Satoh ,  Takeshi Kijima ,  Hironori Matsunaga ,  Masayoshi Koba

发明人： Sakiko Satoh ,  Takeshi Kijima ,  Hironori Matsunaga ,  Masayoshi Koba

IPC分类号： H01L218242

CPC分类号： H01L28/56

摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.

摘要翻译： 通过在晶体生长的衬底温度下通过MOCVD法在衬底上形成结晶薄膜并在结晶薄膜上形成铁电薄膜的方法获得铁电薄膜涂覆衬底，借助于 在成膜温度下的MOCVD方法，其低于结晶薄膜的成膜温度。 通过该制造方法，能够在较低温度下制造薄膜的表面致密且均匀，漏电流特性优异，剩余自发极化足够大的强电介质薄膜。

公开(公告)号：US5851841A

公开(公告)日：1998-12-22

申请号：US713651

申请日：1996-09-13

申请人： Maho Ushikubo ,  Yasuyuki Ito ,  Seiichi Yokoyama ,  Hironori Matsunaga ,  Masayoshi Koba

发明人： Maho Ushikubo ,  Yasuyuki Ito ,  Seiichi Yokoyama ,  Hironori Matsunaga ,  Masayoshi Koba

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L29/92 ,  H01L37/02 ,  H01L41/09 ,  H01L41/187 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L28/40 ,  H01L21/31691 ,  H01L28/55

摘要： A method for producing a ferroelectric element having a lower electrode layer, a ferroelectric film and an upper electrode layer provided in sequence on the substrate is disclosed. The method comprising the step of applying a metal-contained precursor solution to the surface of the lower electrode layer formed on the substrate, the step of drying the applied precursor solution to remove the solution alone by heating it, a first heat treatment step for heating the dried precursor to form a ferroelectric film, and a second heat treatment step for heating the formed film element in a gas-pressurized atmosphere of lower than 1 atmosphere after forming an upper electrode layer on the ferroelectric film.

摘要翻译： 公开了一种在基板上依次设置具有下电极层，铁电体膜和上电极层的铁电体元件的制造方法。 该方法包括以下步骤：将金属含有的前体溶液施加到形成在基板上的下电极层的表面，干燥所施加的前体溶液以通过加热单独除去溶液的步骤，加热第一热处理步骤 所述干燥前体形成铁电体膜;以及第二热处理步骤，用于在所述强电介质膜上形成上电极层之后，在低于1大气压的气体加压气氛中加热所述成膜元件。

公开(公告)号：US5811181A

公开(公告)日：1998-09-22

申请号：US449701

申请日：1995-05-24

申请人： Takeshi Kijima ,  Sakiko Satoh ,  Hironori Matsunaga ,  Masayoshi Koba ,  Noboru Ohtani

发明人： Takeshi Kijima ,  Sakiko Satoh ,  Hironori Matsunaga ,  Masayoshi Koba ,  Noboru Ohtani

IPC分类号： C01G49/00 ,  C01G29/00 ,  C23C16/40 ,  C23C16/56 ,  H01B3/02 ,  H01B3/10 ,  H01B3/12 ,  H01B17/60 ,  H01B19/00 ,  H01L21/336 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L41/39 ,  H01L49/02 ,  B32B17/00

CPC分类号： C23C16/40 ,  C23C16/56 ,  Y10T428/252 ,  Y10T428/256

摘要： A close a-axis orientating film having a smooth surface and excellent ferroelectric characteristics is manufactured at a low temperature with preferable reproducibility to apply ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 to development of various kinds of devices such as a ferroelectric non-volatile memory, a pyroelectric sensor, etc. A ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 thin film is formed on a substrate through a titanium oxide buffer layer so that closeness and surface smoothness of the Bi.sub.4 Ti.sub.3 O.sub.12 thin film manufactured on the titanium oxide buffer layer can be improved.

摘要翻译： 在低温下制造具有光滑表面和优异的铁电特性的紧密的a轴取向膜，并且以铁电Bi4Ti3O12的优点的再现性可以用于开发各种诸如铁电非易失性存储器，热电传感器等的器件。 通过氧化钛缓冲层在基板上形成铁电Bi4Ti3O12薄膜，可以提高在氧化钛缓冲层上制造的Bi 4 Ti 3 O 12薄膜的接近度和表面平滑性。

公开(公告)号：US4855014A

公开(公告)日：1989-08-08

申请号：US6363

申请日：1987-01-23

申请人： Seizo Kakimoto ,  Jun Kudo ,  Masayoshi Koba

发明人： Seizo Kakimoto ,  Jun Kudo ,  Masayoshi Koba

IPC分类号： H01L21/20 ,  H01L21/263 ,  H01L21/268

CPC分类号： H01L21/2636 ,  H01L21/2022 ,  H01L21/268 ,  Y10S117/904

摘要： Disclosed is a method of manufacturing semiconductor devices, in which a monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or polycrystalline thin film by annealing with energy beams, comprising the steps of: forming a compound film of a belt-shaped high melting point metal having a width narrower than the diameter of said energy beams and polycrystalline silicon, on said amorphous or polycrystalline thin film; causing said amorphous or polycrystalline thin film to contact with a monocrystalline substrate beneath the center line of said belt-shaped compound film at a position of more than 50 to 200 .mu.m remote from the end of the belt-shaped compound film in the scanning direction of said energy beams, with the contact shape being a tiny spot narrower than the width of the belt-shaped compound film; radiating said energy beams, penetrating through said belt-shaped compound film to scan parallel to the belt, starting from the vicinity of the end of the belt-shaped compound film, and inducing crystal growth of the amorphous or polycrystalline thin film beneath the belt-shaped compound film, starting from the monocrystals inheriting the crystalline configuration of the monocrystalline substrate developed by epitaxial growth from the monocrystalline substrate in the amorphous or polycrystalline thin film contacting with the monocrystalline substrate near the end of the belt-shaped compound film.It is more preferable to compose so that the upper surface of the amorphous or polycrystalline thin film contacting with the monocrystalline substrate may be flush with the upper surface of the amophous or polycrystalline thin film not contacting with the monocrystalline substrate near this contacting portion.

摘要翻译： 公开了一种制造半导体器件的方法，其中通过用能量束退火来溶解和重结晶非晶或多晶薄膜形成单晶薄膜，包括以下步骤：形成带状高熔点的复合膜 在所述非晶或多晶薄膜上具有比所述能量束和多晶硅的直径窄的宽度的金属; 使得所述非晶或多晶薄膜与所述带状复合膜的中心线下方的单晶基板在距离带状复合膜的端部沿扫描方向远离的位置大于50至200μm的位置 的所述能量束，其接触形状是比带状复合膜的宽度窄的微小点; 从带状化合物膜的端部附近开始穿透所述带状复合膜从而平行于带扫描的所述能量束，并且引导非晶或多晶薄膜在带状复合膜下方的晶体生长。 从单晶晶体的晶体构造开始，该晶体构造通过在与带状复合膜的端部附近的单晶衬底接触的非晶或多晶薄膜中从单晶衬底外延生长而显影的单晶衬底的结晶构型。 更优选组成，使得与单晶衬底接触的非晶或多晶薄膜的上表面可以与在该接触部分附近的单晶衬底不接触的大孔或多晶薄膜的上表面齐平。