公开(公告)号：US5648276A

公开(公告)日：1997-07-15

申请号：US250679

申请日：1994-05-26

申请人： Masaki Hara ,  Naoki Sano ,  Toshiyuki Sameshima ,  Atsushi Kohno ,  Mitsunobu Sekiya ,  Yasuhiro Kanaya ,  Michihisa Yano

发明人： Masaki Hara ,  Naoki Sano ,  Toshiyuki Sameshima ,  Atsushi Kohno ,  Mitsunobu Sekiya ,  Yasuhiro Kanaya ,  Michihisa Yano

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/324 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/67207 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber. The method and apparatus can fabricate thin film semiconductor devices having a high performance and a high reliability with a good uniformity by making a clean and high quality semiconductor/insulator interface or by hydrogenating a semiconductor thin film without changes in electrical conductivity.

摘要翻译： 公开了一种用于制造薄膜半导体器件的方法和装置。 在晶片上制造的a-Si：H薄膜通过在激光退火室中照射激光束而产生多晶Si薄膜而进行熔融再结晶。 然后将晶片输送到CVD室，而不将其暴露于外部空气。 在CVD室中的多晶Si薄膜的清洁表面上产生栅极绝缘膜。 在另一种情况下，a-Si：H薄膜在激光退火室中熔融再结晶以产生多晶Si薄膜，然后将晶片输送到氢化室，而不暴露于外部空气。 此后，多晶Si薄膜在氢化室中被等离子体氢化。 该方法和装置可以通过制造清洁且高质量的半导体/绝缘体界面或通过不导电导电性的变化来氢化半导体薄膜来制造具有高性能和高可靠性的薄膜半导体器件。

公开(公告)号：US20090253273A1

公开(公告)日：2009-10-08

申请号：US12305180

申请日：2007-04-25

申请人： Naoki Sano ,  Toshiyuki Sameshima

发明人： Naoki Sano ,  Toshiyuki Sameshima

IPC分类号： H01L21/268

CPC分类号： H01L21/324 ,  H01L21/02381 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： The present invention relates to a method of heat-treating a semiconductor, and the object is to enable heat-treating to a semiconductor or semiconductor device in a short period time and to obtain a stable and high reforming effect. The present invention is a method in which carbon or a layer including carbon is provided as a light absorbing layer, and a semiconductor material as a heat-treating target layer or semiconductor device contacting the heat absorbing layer directly or through a heat transfer layer of 5 nm-100 μm in thickness is heat-treated, and the light source to be used is a semiconductor laser light of wavelength of 600 nm-2 μm, and this semiconductor laser light is caused to continuously irradiate and sweep the surface of the heat-treating target material. The light source can be easily made to output high power, and heat-treating at a high speed and with low energy consumption is realized.

摘要翻译： 半导体热处理方法技术领域本发明涉及半导体的热处理方法，其目的在于能够在短时间内对半导体或半导体器件进行热处理，并获得稳定且高的重整效果。 本发明是提供碳或包含碳的层作为光吸收层的方法，以及作为热处理对象层的半导体材料或半导体器件直接或通过5的传热层与吸热层接触 热处理厚度为nm-100μm的光，所使用的光源为波长为600nm-2μm的半导体激光，并且使该半导体激光连续地照射并扫描散热片的表面， 处理目标材料。 可以容易地实现光源输出高功率，实现高速，低能耗的热处理。

公开(公告)号：US06549694B2

公开(公告)日：2003-04-15

申请号：US09836718

申请日：2001-04-17

申请人： Takuya Makino ,  Kazuhiro Hane ,  Kazuhito Hori ,  Masaki Hara ,  Naoki Sano ,  Hidenori Watanabe

发明人： Takuya Makino ,  Kazuhiro Hane ,  Kazuhito Hori ,  Masaki Hara ,  Naoki Sano ,  Hidenori Watanabe

IPC分类号： G02B626

CPC分类号： G02B6/3522 ,  G02B6/3546 ,  G02B6/357 ,  G02B6/3582 ,  G02B6/3584 ,  G02B6/3598 ,  G02B26/0841

摘要： To provide a small and lightweight optical switching element with a simple structure capable of fast response, and an optical switching apparatus employing the optical switching element. Optical extraction unit contacts an upper substrate with electrostatic attraction generated between a transparent electrode of the optical extraction unit and a transparent electrode of the upper substrate. In the case that light enters one V-shaped trench of the upper substrate vertically, the light enters the optical extraction unit of the upper substrate and is emitted from a back of the optical extraction unit (a tapered unit). Subsequently, the incident light P1 passes through a lower substrate and is converted into transmission light. With electrostatic attraction generated between a transparent electrode of the lower substrate and a transparent electrode of the optical extraction unit, the optical extraction unit is attracted to a lower substrate side. In this state, the incident light is caused the total reflection at a total reflection face. This total reflection light is emitted from the other V-shaped trench. The incident light can be switched in two ways: the transmission light and the total reflection light.

公开(公告)号：US20050213303A1

公开(公告)日：2005-09-29

申请号：US11133743

申请日：2005-05-20

申请人： Minehiro Tonosaki ,  Naoki Sano ,  Takuya Makino

发明人： Minehiro Tonosaki ,  Naoki Sano ,  Takuya Makino

IPC分类号： F28D15/02 ,  G06F1/20 ,  H01L23/427 ,  H01L23/473 ,  H05K7/20

CPC分类号： H01L23/473 ,  F28D15/0266 ,  G06F1/203 ,  H01L23/427 ,  H01L2924/0002 ,  Y10T29/4935 ,  Y10T29/49353 ,  Y10T29/49359 ,  H01L2924/00

摘要： This invention provides a cooler having an excellent cooling performance, which is capable of being downsized and low-profiled, an electronic apparatus and a method for fabricating the cooler. The cooler (1) comprises lower board member (10) and upper complex board members. The lower board member (10) is made from plastic material and has a cavity portion (11) for allowing water or vapor to be circulated therein. The upper complex board members comprise board member (20) for a condenser part, upper board member (30), and board member (40) for a wick part. The board members (20) and (40) for the condenser part and the wick part, respectively, are made from metallic material having higher thermal conductivity such as copper and nickel. Each of the members has a groove for allowing them to be served as the condenser and the wick. The upper board member (30) includes an opening (32) or (34) for allowing the board member (20) or (40) for the condenser part or the wick part to be incorporated, and a hollow (31) for heat insulation.

摘要翻译： 本发明提供一种具有优异的冷却性能的冷却器，其能够被小型化和低成形化，电子设备和制造冷却器的方法。 冷却器（1）包括下板构件（10）和上复合板构件。 下板构件（10）由塑料制成，并具有用于使水或蒸汽在其中循环的空腔部分（11）。 上复合板构件包括用于冷凝器部分的板构件（20），上板构件（30）和用于芯部的板构件（40）。 用于冷凝器部分和芯部分别的板件（20）和（40）分别由具有较高导热率的金属材料制成，例如铜和镍。 每个构件具有用于允许它们作为冷凝器和灯芯的凹槽。 上板构件（30）包括用于容纳用于冷凝器部分或芯部的板构件（20）或（40）的开口（32）或（34），以及用于隔热的中空部（31） 。

公开(公告)号：US06768257B1

公开(公告)日：2004-07-27

申请号：US09698989

申请日：2000-10-27

申请人： Jiro Yamada ,  Tasuya Sasaoka ,  Mitsunobu Sekiya ,  Naoki Sano ,  Yasuhiro Chiba ,  Takashi Hirano ,  Yuichi Iwase

发明人： Jiro Yamada ,  Tasuya Sasaoka ,  Mitsunobu Sekiya ,  Naoki Sano ,  Yasuhiro Chiba ,  Takashi Hirano ,  Yuichi Iwase

IPC分类号： H01J162

CPC分类号： H01L27/1214 ,  H01L27/3246 ,  H01L51/0011 ,  H01L51/5203 ,  H01L51/5212 ,  H01L51/5228 ,  H01L2251/5315

摘要： An active-matrix-type display apparatus ensuring sufficient luminous intensity of display devices within a display plane and allowing improved display properties is provided. Such display apparatus having of a plurality of pixels comprises a lower electrode formed on a substrate; organic layers formed on the lower electrode; and an upper common electrode formed on the organic layers; in which a plurality of the pixels are partitioned by a rib larger in the thickness than the organic layers and having at least a conductive material layer; and the conductive material layer is electrically connected to the upper common electrode.

摘要翻译： 提供一种有源矩阵型显示装置，其确保显示平面内的显示装置的足够的发光强度并且允许改进的显示特性。 具有多个像素的这种显示装置包括形成在基板上的下电极; 形成在下电极上的有机层; 和形成在有机层上的上部公共电极; 其中多个像素被厚度大于有机层的肋分隔，并且至少具有导电材料层; 并且导电材料层电连接到上部公共电极。

公开(公告)号：US20100190296A1

公开(公告)日：2010-07-29

申请号：US12094756

申请日：2006-11-08

申请人： Yoshiyuki Kawana ,  Naoki Sano

发明人： Yoshiyuki Kawana ,  Naoki Sano

IPC分类号： H01L21/78

CPC分类号： H01L21/6835 ,  B23K26/0006 ,  B23K26/354 ,  B23K2101/34 ,  B23K2101/35 ,  B23K2103/08 ,  B23K2103/10 ,  B23K2103/172 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/28512 ,  H01L21/78 ,  H01L24/27 ,  H01L29/456 ,  H01L29/66272 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/04026 ,  H01L2224/27436 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/0132 ,  H01L2924/01014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The present invention provides a method of manufacturing a semiconductor device in which a thinned substrate of a semiconductor or semiconductor device is handled without cracks in the substrate and treated with heat to improve a contact between semiconductor back surface and metal in a high yield and a semiconductor device may be manufactured in a high yield. In the method of manufacturing a semiconductor device according to the present invention, a notched part is formed from a surface to a middle in a semiconductor substrate by dicing and the surface of the substrate is fixed to a support base. Next, a back surface of the substrate is ground to thin the semiconductor substrate and then a metal electrode and a carbon film that is a heat receiving layer are sequentially formed on the back surface of the substrate. Next, the carbon film is irradiated with light at a power density of 1 kW/cm2 to 1 MW/cm2 for a short time of 0.01 ms to 10 ms to transfer heat from the carbon film and alloy an interface between a semiconductor and the metal electrode. Subsequently, the semiconductor substrate is separated at the notched part into pieces.

摘要翻译： 本发明提供一种制造半导体器件的方法，其中半导体或半导体器件的薄化衬底在衬底中被处理而没有裂纹并且被热处理以高产率地改善半导体背表面和金属之间的接触，并且半导体 装置可以以高产量制造。 在根据本发明的半导体器件的制造方法中，通过切割从半导体衬底的表面到中间形成切口部分，并且将衬底的表面固定到支撑基底。 接下来，将衬底的背面研磨以使半导体衬底细化，然后在衬底的背面依次形成金属电极和作为受热层的碳膜。 接下来，以1kW / cm 2至1MW / cm 2的功率密度的光以0.01ms至10ms的短时间照射碳膜，以从碳膜转移热量并使合金在半导体和金属之间的界面 电极。 随后，将半导体衬底在切口部分分成多个。

公开(公告)号：US07230685B2

公开(公告)日：2007-06-12

申请号：US11007258

申请日：2004-12-09

申请人： Yousuke Suzuki ,  Hitoshi Yamada ,  Ryoichi Sugawara ,  Naoki Sano

发明人： Yousuke Suzuki ,  Hitoshi Yamada ,  Ryoichi Sugawara ,  Naoki Sano

IPC分类号： G01C3/08

CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S7/4876 ,  G01S17/026 ,  G01S17/88 ,  G01S17/89 ,  H01L27/146

摘要： First image data including a first pixel value according to the intensity of background light is obtained by means of only exposure. Second image data including a second pixel value according to the intensity of the light reflected or scattered by an object is obtained by so controlling light emission and exposure as to receive part of the reflected or scattered light over the whole exposure period. The part of the reflected or scattered light corresponds to the flat period of emitted pulsed light. Third image data including a third pixel value according to the distance to the object is obtained by so controlling light emission and exposure as to receive the part of the reflected or scattered light for a time according to the distance. The first pixel value is subtracted from each of the second and third pixel values so that the influence of the background light can be excluded. The ratio between the subtraction results is calculated so that the influences of factors that vary the intensity of the reflected or scattered light can be cancelled.

摘要翻译： 通过仅曝光获得包括根据背景光的强度的第一像素值的第一图像数据。 通过控制发光和曝光以在整个曝光期间接收反射或散射光的一部分，获得包括根据被物体反射或散射的光的强度的第二像素值的第二图像数据。 反射或散射光的一部分对应于发射脉冲光的平坦周期。 通过控制发光和曝光来获得根据距离物体的距离的第三像素值的第三图像数据，以便根据距离接收反射或散射光的一部分一段时间。 从第二和第三像素值的每一个中减去第一像素值，从而可以排除背景光的影响。 计算减法结果之间的比例，以便可以消除改变反射或散射光强度的因素的影响。

公开(公告)号：US06400448B1

公开(公告)日：2002-06-04

申请号：US09696969

申请日：2000-10-27

申请人： Ryoichi Sugawara ,  Naoki Sano

发明人： Ryoichi Sugawara ,  Naoki Sano

IPC分类号： G01C308

CPC分类号： G01S7/483 ,  B60R21/0134 ,  G01S7/4863 ,  G01S17/08 ,  G01S17/89 ,  G01S17/936

摘要： A photo detecting device includes an output line leading to a processing circuit, and an array of pixels including respective photo detecting zones for changing incident light into corresponding electric signals through photoelectric conversion. Each of the pixels includes a first switch for selectively connecting and disconnecting a related photo detecting zone to and from the output line, and a second switch for selectively connecting and disconnecting the related photo detecting zone to and from a ground line. The second switch disconnects the related photo detecting zone from the ground line when the first switch connects the related photo detecting zone to the output line. The second switch connects the related photo detecting zone to the ground line when the first switch disconnects the related photo detecting zone from the output line.

摘要翻译： 光检测装置包括通向处理电路的输出线和包括用于通过光电转换将入射光改变成相应的电信号的各个光检测区的像素阵列。 每个像素包括用于有选择地将相关光电检测区域与输出线路连接和断开的第一开关，以及用于选择性地将相关光电检测区域与地线连接和断开的第二开关。 当第一个开关将相关的光电检测区域连接到输出线路时，第二个开关断开相关的光电检测区域与地线的连接。 当第一开关将相关的光电检测区域从输出线断开时，第二个开关将相关的光电检测区域连接到地线。

公开(公告)号：US6120338A

公开(公告)日：2000-09-19

申请号：US415369

申请日：1999-10-08

申请人： Takashi Hirano ,  Tatsuya Sasaoka ,  Mitsunobu Sekiya ,  Naoki Sano ,  Tetsuo Nakayama

发明人： Takashi Hirano ,  Tatsuya Sasaoka ,  Mitsunobu Sekiya ,  Naoki Sano ,  Tetsuo Nakayama

IPC分类号： H01L27/32 ,  H01L51/50 ,  H01L51/56 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22

CPC分类号： H01L51/56 ,  H01L27/3281 ,  H05B33/10 ,  H01L27/3211

摘要： The present invention provides a method of manufacturing an organic EL display capable of decreasing the resistance of scanning-side electrodes, and improving the efficiency of utilization of light emitted in organic layers. In the manufacturing method, stripe first electrodes made of a transparent conductive material are formed in parallel on a transparent substrate, and then an insulation layer is formed on the transparent substrate with the apertures formed above the first electrodes. An organic film 24 composed of a film of an organic luminescent material, a second electrode material film and a protecting film is laminated in this order on the transparent substrate to cover the insulation layer, and then independent island resist patterns are formed on the protecting film. Then, a laminated film composed of the organic film, the second electrode material film and the protecting film is etched using the resist patterns as a mask to pattern independent island laminations each composed of an organic layer, a second electrode, and a protecting layer.

摘要翻译： 本发明提供一种制造能够降低扫描侧电极的电阻的有机EL显示器的方法，并且提高了在有机层中发射的光的利用效率。 在制造方法中，由透明导电材料制成的条纹第一电极在透明基板上平行地形成，然后在透明基板上形成绝缘层，其中孔形成在第一电极上。 将由有机发光材料膜，第二电极材料膜和保护膜构成的有机膜24按顺序层叠在透明基板上以覆盖绝缘层，然后在保护膜上形成独立的岛状抗蚀剂图案 。 然后，使用抗蚀剂图案作为掩模蚀刻由有机膜，第二电极材料膜和保护膜构成的层叠膜，以对由各有机层，第二电极和保护层构成的独立的岛状叠层进行图案化。

公开(公告)号：US20130306954A1

公开(公告)日：2013-11-21

申请号：US13982082

申请日：2012-03-05

申请人： Naoki Hayashi ,  Michio Suzuka ,  Takashi Sekiguchi ,  Takeyuki Yamaki ,  Hiroyuki Nishide ,  Kenichi Oyaizu ,  Fumiaki Kato ,  Naoki Sano

发明人： Naoki Hayashi ,  Michio Suzuka ,  Takashi Sekiguchi ,  Takeyuki Yamaki ,  Hiroyuki Nishide ,  Kenichi Oyaizu ,  Fumiaki Kato ,  Naoki Sano

IPC分类号： H01G9/20

CPC分类号： H01G9/2018 ,  H01G9/2031 ,  H01G9/2059 ,  H01L51/0035 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0072 ,  H01L51/422 ,  Y02E10/542

摘要： Provided is a photoelectric element that includes an electron transport layer having excellent electron transport properties and a sufficiently large reaction interface and has low resistance loss and excellent conversion efficiency between light and electricity. The photoelectric element includes a first electrode 3, a second electrode 4, an electron transport layer 1 and a hole transport layer 5 interposed between the first electrode 3 and the second electrode 4, an electrolyte solution, and a sensitizing dye. The electron transport layer 1 includes an organic compound having an oxidation-reduction site capable of repeated oxidation-reduction. The electrolyte solution serves to stabilize a reduction state of the oxidation-reduction site. The organic compound and the electrolyte solution form a gel layer 2. The sensitizing dye is provided in contact with the electron transport layer 1. The hole transport layer 5 contains a charge transporter serving to reduce an oxidized form of the sensitizing dye and having a number average molecular weight of 2,000 or more and 100,000 or less.

摘要翻译： 提供一种光电元件，其包括具有优异的电子传输性能和足够大的反应界面的电子传输层，并且具有低电阻损耗和优异的光和电转换效率。 光电元件包括​​介于第一电极3和第二电极4之间的第一电极3，第二电极4，电子传输层1和空穴传输层5，电解质溶液和敏化染料。 电子传输层1包括具有能够重复氧化还原的氧化还原位点的有机化合物。 电解液用于稳定氧化还原部位的还原状态。 有机化合物和电解质溶液形成凝胶层2.提供敏化染料与电子传输层1接触。空穴传输层5含有用于减少敏化染料的氧化形式并具有数目的电荷转运体 平均分子量为2,000以上且100,000以下。