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    Package structure having micro-electromechanical element
    13.
    发明授权
    Package structure having micro-electromechanical element 有权
    具有微机电元件的封装结构

    公开(公告)号：US08564115B2

    公开(公告)日：2013-10-22

    申请号：US13492220

    申请日：2012-06-08

    申请人： Chang-Yueh Chan ,  Chien-Ping Huang ,  Chun-Chi Ke ,  Chun-An Huang ,  Chih-Ming Huang

    发明人： Chang-Yueh Chan ,  Chien-Ping Huang ,  Chun-Chi Ke ,  Chun-An Huang ,  Chih-Ming Huang

    IPC分类号： H01L23/04

    CPC分类号： H01L21/02 ,  B81B7/007 ,  B81B2207/07 ,  H01L23/52 ,  H01L29/84 ,  H01L2224/02166 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant formed on the chip with part of the stud bumps being exposed from the encapsulant; and a metal conductive layer formed on the encapsulant and connected to the stud bumps. The invention is characterized by completing the packaging process on the wafer directly to enable thinner and cheaper package structures to be fabricated within less time. This invention further provides a method for fabricating the package structure as described above.

    摘要翻译： 提出具有微机电（MEMS）元件的封装结构，其包括具有多个电连接焊盘和形成在其上的MEMS元件的芯片; 设置在所述芯片上用于覆盖所述MEMS元件的盖; 设置在每个电连接焊盘上的螺柱凸块; 形成在芯片上的密封剂，其中一部分柱状凸块从密封剂暴露出来; 以及金属导电层，形成在密封剂上并连接到凸块上。 本发明的特征在于直接完成晶片上的封装工艺，以便在更短的时间内制造更薄和更便宜的封装结构。 本发明还提供如上所述的用于制造封装结构的方法。

    PACKAGE STRUCTURE HAVING MICRO-ELECTROMECHANICAL ELEMENT
    15.
    发明申请
    PACKAGE STRUCTURE HAVING MICRO-ELECTROMECHANICAL ELEMENT 有权
    具有微电子元件的包装结构

    公开(公告)号：US20120241937A1

    公开(公告)日：2012-09-27

    申请号：US13492220

    申请日：2012-06-08

    申请人： Chang-Yueh Chan ,  Chien-Ping Huang ,  Chun-Chi Ke ,  Chun-An Huang ,  Chih-Ming Huang

    发明人： Chang-Yueh Chan ,  Chien-Ping Huang ,  Chun-Chi Ke ,  Chun-An Huang ,  Chih-Ming Huang

    IPC分类号： H01L23/498

    CPC分类号： H01L21/02 ,  B81B7/007 ,  B81B2207/07 ,  H01L23/52 ,  H01L29/84 ,  H01L2224/02166 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant formed on the chip with part of the stud bumps being exposed from the encapsulant; and a metal conductive layer formed on the encapsulant and connected to the stud bumps. The invention is characterized by completing the packaging process on the wafer directly to enable thinner and cheaper package structures to be fabricated within less time. This invention further provides a method for fabricating the package structure as described above.

    摘要翻译： 提出具有微机电（MEMS）元件的封装结构，其包括具有多个电连接焊盘和形成在其上的MEMS元件的芯片; 设置在所述芯片上用于覆盖所述MEMS元件的盖; 设置在每个电连接焊盘上的螺柱凸块; 形成在芯片上的密封剂，其中一部分柱状凸块从密封剂暴露出来; 以及金属导电层，形成在密封剂上并连接到凸块上。 本发明的特征在于直接完成晶片上的封装工艺，以便在更短的时间内制造更薄和更便宜的封装结构。 本发明还提供如上所述的用于制造封装结构的方法。

    Sensor semiconductor device and manufacturing method thereof
    19.
    发明申请
    Sensor semiconductor device and manufacturing method thereof 审中-公开
    传感器半导体器件及其制造方法

    公开(公告)号：US20080296716A1

    公开(公告)日：2008-12-04

    申请号：US12151570

    申请日：2008-05-07

    申请人： Chang-Yueh Chan ,  Chien-Ping Huang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao ,  Chun-Chi Ke

    发明人： Chang-Yueh Chan ,  Chien-Ping Huang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao ,  Chun-Chi Ke

    IPC分类号： H01L21/50 ,  H01L23/00

    CPC分类号： H01L21/56 ,  H01L23/3114 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    摘要： A sensor semiconductor device and a manufacturing method thereof are disclosed. The method includes: providing a light-permeable carrier board with a plurality of metallic circuits; electrically connecting the metallic circuits to a plurality of sensor chips through conductive bumps formed on the bond pads of the sensor chips, wherein the sensor chips have been previously subjected to thinning and chip probing; filling a first dielectric layer between the sensor chips to cover the metallic circuits and peripheries of the sensor chips; forming a second dielectric layer on the sensor chips and the first dielectric layer; forming grooves between the sensor chips for exposing the metallic circuits such that a plurality of conductive traces electrically connected to the metallic circuits can be formed on the second dielectric layer; and singulating the sensor chips to form a plurality of sensor semiconductor devices. The present invention overcomes the drawbacks of breakage of trace connection due to a sharp angle formed at joints, poor electrical connection and chip damage due to an alignment error in cutting from the back of the wafer, as well as an increased cost due to multiple sputtering processes for forming traces.

    摘要翻译： 公开了一种传感器半导体器件及其制造方法。 该方法包括：提供具有多个金属电路的透光性载板; 通过形成在传感器芯片的接合焊盘上的导电凸块将金属电路电连接到多个传感器芯片，其中传感器芯片已经预先经受了薄化和芯片探测; 在传感器芯片之间填充第一电介质层以覆盖金属电路和传感器芯片的周边; 在所述传感器芯片和所述第一介电层上形成第二电介质层; 在所述传感器芯片之间形成用于暴露所述金属电路的槽，使得可以在所述第二介电层上形成电连接到所述金属电路的多个导电迹线; 并且分离传感器芯片以形成多个传感器半导体器件。 本发明克服了由于在接头处形成的尖角导致的迹线连接断裂的缺点，由于从晶片背面的切割中的对准误差导致的不良电连接和芯片损坏以及由于多次溅射而导致的成本增加 形成痕迹的过程。

    Sensor-type semiconductor device and manufacturing method thereof
    20.
    发明申请
    Sensor-type semiconductor device and manufacturing method thereof 审中-公开
    传感器型半导体器件及其制造方法

    公开(公告)号：US20080237767A1

    公开(公告)日：2008-10-02

    申请号：US12080002

    申请日：2008-03-31

    申请人： Chang-Yueh Chan ,  Chien-Ping Huang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao

    发明人： Chang-Yueh Chan ,  Chien-Ping Huang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao

    IPC分类号： H01L31/0203 ,  H01L31/18

    CPC分类号： H01L27/14618 ,  B81C1/00888 ,  B81C2203/0118 ,  H01L23/3114 ,  H01L24/11 ,  H01L27/14683 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01023

    摘要： A sensor-type semiconductor device and manufacturing method thereof are disclosed. The method includes providing a wafer comprising a plurality of sensor chips; forming concave grooves between the solder pads formed on the active surface of adjacent sensor chips; filling a filling material into the concave grooves and forming first conductive circuits electrically connecting the solder pads of adjacent sensor chips; mounting a light permeable body on the active surface of the wafer and thinning the non-active surface of the wafer to expose the filling material; mounting the wafer on a carrier board with second conductive circuits formed thereon corresponding in position to the filling material; forming first openings by cutting the light permeable body and the wafer to a position at which the second conductive circuits are located; forming metallic layers in the first openings by electroplating, the metallic layers electrically connecting the first and second conductive circuits of adjacent sensor chips; forming second openings by cutting the metallic layers to break the first conductive circuit connections and the second conductive circuit connections of adjacent sensor chips and meanwhile keep the first and second conductive circuits of each sensor chip still electrically connected through the metallic layers; filling a dielectric material into the second openings and removing the carrier board; and separating each of the sensor chips to form a plurality of sensor-type semiconductor devices. The invention overcomes the drawbacks of the prior art such as slanting notches formed on the non-active surface of the wafer, displacement of the notches due to the difficulty in precise alignment, as well as broken joints caused by concentrated stress generated in the slanting notches and exposed circuits.

    摘要翻译： 公开了一种传感器型半导体器件及其制造方法。 该方法包括提供包括多个传感器芯片的晶片; 在形成在相邻传感器芯片的有效表面上的焊盘之间形成凹槽; 将填充材料填充到凹槽中并形成电连接相邻传感器芯片的焊盘的第一导电电路; 将透光体安装在晶片的活性表面上并使晶片的非活性表面变薄以暴露填充材料; 将晶片安装在载体板上，其上形成有对应于位于填充材料的第二导电电路; 通过将透光体和晶片切割到第二导电电路所在的位置来形成第一开口; 通过电镀在第一开口中形成金属层，金属层电连接相邻传感器芯片的第一和第二导电电路; 通过切割金属层来形成第二开口，以破坏相邻传感器芯片的第一导电电路连接和第二导电电路连接，同时保持每个传感器芯片的第一和第二导电电路通过金属层电连接; 将电介质材料填充到第二开口中并移除载体板; 并分离每个传感器芯片以形成多个传感器型半导体器件。 本发明克服了现有技术的缺点，例如在晶片的非活性表面上形成的倾斜凹口，由于难以精确对准而导致的凹口位移以及由倾斜凹口产生的集中应力引起的断裂接头 和暴露电路。