公开(公告)号：US07078341B2

公开(公告)日：2006-07-18

申请号：US10673648

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76841

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.

摘要翻译： 一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） Co（CO）8，Rh 4（CO）12，SO 2，CO 2， （CO）10，Cr（CO）6和Ru 3（CO） _{12 。 在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的衬底温度下从包含W（CO）6 N 2前体的工艺气体中沉积W层， 约200毫托。}

公开(公告)号：US06989321B2

公开(公告)日：2006-01-24

申请号：US10673908

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

IPC分类号： H01L21/20 ,  H01L21/44

CPC分类号： C23C16/16 ,  H01L21/28556

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.

摘要翻译： 通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） CO 2，CO 2，CO 2，CO 2，CO 2，CO 2，CO 2， Re（CO）10，Cr（CO）6和Ru 3（CO）3， 12个前体。 在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

公开(公告)号：US07456109B2

公开(公告)日：2008-11-25

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： H01L21/302

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US20060124151A1

公开(公告)日：2006-06-15

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： B08B6/00

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US08486845B2

公开(公告)日：2013-07-16

申请号：US11084024

申请日：2005-03-21

申请人： Tsukasa Matsuda

发明人： Tsukasa Matsuda

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45544 ,  C23C16/4554 ,  C23C16/515 ,  H01J37/32009 ,  H01J37/32532 ,  H01L21/28562

摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Also included is coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate. A reactive gas is introduced within the process chamber, the reactive gas chemically reacting with contaminants in the process chamber to release the contaminants from at least one of a process chamber component or the substrate.

摘要翻译： 使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底布置在处理室中，该处理室被配置为便于PEALD工艺，在处理室内引入第一工艺材料并引入第二工艺材料 在处理室内。 还包括在引入第二工艺材料期间将电磁功率耦合到处理室，以便产生促进第一和第二工艺材料在衬底表面处的还原反应的等离子体。 反应性气体被引入处理室内，反应气体与处理室中的污染物质化学反应以从处理室组件或衬底中的至少一个释放污染物。

公开(公告)号：US08100147B2

公开(公告)日：2012-01-24

申请号：US11782090

申请日：2007-07-24

申请人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

发明人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

IPC分类号： B01F5/18

CPC分类号： G01N1/24 ,  C23C16/4405 ,  C23C16/4412 ,  G01N15/06 ,  G01N2015/0693 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/68742 ,  Y10T137/8593 ,  Y10T137/87652 ,  Y10T137/8766

摘要： The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

摘要翻译： 本发明提供一种粒子测量系统，其设置在处理系统40中，该处理系统40产生通过真空泵98排出处理室48中的空气或气体而获得的气氛，并将与半导体制造有关的工艺应用于晶片W 附着在排气管90上，排气管90将处理室48的排气口86与真空泵98连接，并测量废气中的颗粒数量及其测量方法，该系统和方法提供处理 系统和清洁方法，其通过基于废气中的颗粒数量确定终点并执行不需要的膜的清洁来终止蚀刻工艺。

公开(公告)号：US07834739B2

公开(公告)日：2010-11-16

申请号：US12076337

申请日：2008-03-17

申请人： Shoji Yamaguchi ,  Mario Fuse ,  Yasunori Koda ,  Kunihiro Takahashi ,  Hiroyoshi Inoue ,  Tsukasa Matsuda

发明人： Shoji Yamaguchi ,  Mario Fuse ,  Yasunori Koda ,  Kunihiro Takahashi ,  Hiroyoshi Inoue ,  Tsukasa Matsuda

IPC分类号： B60R25/00 ,  G06F7/04 ,  G06F7/00

CPC分类号： G01R33/02

摘要： A baggage management gate includes a first reading device and a second reading device, a detecting device, a determining unit, a first opening and closing device and a second opening and closing device. The baggage management gate manages baggage that is restricted to be carried in or out from a predetermined region. And in order away from the region in which the baggage is managed, the first reading device, the second opening and closing device, the detecting device for both the first person and the second person, the first opening and closing device, and the second reading device are arranged in an entrance direction from the passage to the management region in which the baggage is managed.

摘要翻译： 行李管理门包括第一读取装置和第二读取装置，检测装置，确定装置，第一打开和关闭装置以及第二打开和关闭装置。 行李管理门管理被限制在预定区域内进出的行李。 并且为了远离管理行李的区域，第一读取装置，第二打开和关闭装置，用于第一人和第二人的检测装置，第一打开和关闭装置以及第二读取 设备沿着通道行进管理区域的入口方向排列。

公开(公告)号：US07667840B2

公开(公告)日：2010-02-23

申请号：US11965357

申请日：2007-12-27

申请人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

发明人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

IPC分类号： G01N21/00

CPC分类号： G01N1/24 ,  C23C16/4405 ,  C23C16/4412 ,  G01N15/06 ,  G01N2015/0693 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/68742 ,  Y10T137/8593 ,  Y10T137/87652 ,  Y10T137/8766

摘要： The present invention provides a particle measuring system which is provided in a processing system that generates an atmosphere obtained by exhausting air or a gas in a processing chamber by a vacuum pump and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe which connects an exhaust opening of the processing chamber with the vacuum pump, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

摘要翻译： 本发明提供一种粒子测量系统，其设置在处理系统中，该处理系统产生通过真空泵排出处理室中的空气或气体而获得的气氛，并将关于半导体制造的处理应用于大气中的晶片W，附着 涉及将处理室的排气口与真空泵连接并测量排气中的颗粒数的排气管及其测量方法，提供处理系统的系统和方法以及终止的处理室的清洁方法 通过基于排气中的颗粒数确定终点并执行不需要的膜的清洁来进行蚀刻处理。

公开(公告)号：US07351285B2

公开(公告)日：2008-04-01

申请号：US11092266

申请日：2005-03-29

申请人： Tsukasa Matsuda

发明人： Tsukasa Matsuda

IPC分类号： C30B23/00 ,  C23C16/00 ,  B05D3/00

CPC分类号： C23C16/18 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76868 ,  H01L21/76873

摘要： A method and system for forming a variable thickness seed layer on a substrate for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate in a process chamber containing a showerhead, with the center of the substrate generally aligned with an inner gas delivery zone of the showerhead and the edge of the substrate generally aligned with an outer gas delivery zone of the showerhead. The method further includes depositing a seed layer on the substrate by exposing the substrate to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone, and exposing the substrate to a second gas flowed through the outer gas delivery zone, whereby the seed layer is deposited with a thickness at the edge of the substrate that is less than the thickness at the center of the substrate.

摘要翻译： 一种用于在随后的金属电化学电镀工艺的衬底上形成可变厚度籽晶层的方法和系统，其中与使用恒定厚度的种子层相比，种子层厚度分布改善了电镀金属层的均匀性。 该方法包括在包含喷头的处理室中提供衬底，其中衬底的中心大致与喷头的内部气体输送区域对准，并且衬底的边缘与喷头的外部气体输送区域大致对准。 该方法还包括通过将衬底暴露于含有流过内部气体输送区的含金属前体的第一气体，并将衬底暴露于流过外部气体输送区的第二气体，从而将衬底层沉积在衬底上，由此 籽晶层在衬底的边缘处被沉积成小于衬底中心的厚度。

公开(公告)号：US07344816B2

公开(公告)日：2008-03-18

申请号：US10940926

申请日：2004-09-15

申请人： Yasuo Matsumura ,  Tsukasa Matsuda ,  Kazuhiko Arai ,  Tetsuo Yamada

发明人： Yasuo Matsumura ,  Tsukasa Matsuda ,  Kazuhiko Arai ,  Tetsuo Yamada

IPC分类号： G03G15/20

CPC分类号： G03G15/2064 ,  G03G2215/208

摘要： A method for forming an image contains steps of: transferring a toner having a volume average particle diameter of 5 μm or less to a recording medium as a toner image having a monochromatic maximum toner mass per area of 0.35 mg/cm2 or less; and fixing the toner image at a surface temperature of a fixing roll which is 130° C. or less. The toner preferably has 0.02 log(Pa)/° C. or less of a gradient of a storage, elasticity per temperature in a temperature range of from Tm+20° C. to Tm+50° C. Here, Tm represents a melting temperature of a crystalline resin contained in the crystalline toner.

摘要翻译： 形成图像的方法包括以下步骤：将具有5μm或更小的体积平均粒径的调色剂转印到记录介质上，作为每单位面积的单色最大调色剂质量为0.35mg / cm 2的调色剂图像， / SUP>以下; 并将调色剂图像定影在130℃或更低的定影辊的表面温度。 调色剂优选在Tm + 20℃至Tm + 50℃的温度范围内具有0.02log（℃）/℃或更低的存储梯度，每温度的弹性。这里，Tm表示熔融 包含在结晶调色剂中的结晶树脂的温度。