公开(公告)号：US06989321B2

公开(公告)日：2006-01-24

申请号：US10673908

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

IPC分类号： H01L21/20 ,  H01L21/44

CPC分类号： C23C16/16 ,  H01L21/28556

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.

摘要翻译： 通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） CO 2，CO 2，CO 2，CO 2，CO 2，CO 2，CO 2， Re（CO）10，Cr（CO）6和Ru 3（CO）3， 12个前体。 在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

公开(公告)号：US07078341B2

公开(公告)日：2006-07-18

申请号：US10673648

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76841

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.

摘要翻译： 一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） Co（CO）8，Rh 4（CO）12，SO 2，CO 2， （CO）10，Cr（CO）6和Ru 3（CO） _{12 。 在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的衬底温度下从包含W（CO）6 N 2前体的工艺气体中沉积W层， 约200毫托。}

公开(公告)号：US20050079708A1

公开(公告)日：2005-04-14

申请号：US10673648

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/16 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76841

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.

摘要翻译： 一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。 在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的基底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

公开(公告)号：US20050070100A1

公开(公告)日：2005-03-31

申请号：US10673908

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/16 ,  C23C16/44 ,  H01L21/285 ,  H01L21/44

CPC分类号： C23C16/16 ,  H01L21/28556

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.

摘要翻译： 通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。 在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。 在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

公开(公告)号：US20090246373A1

公开(公告)日：2009-10-01

申请号：US12063517

申请日：2006-07-06

申请人： Mitsuhiro Tachibana ,  Masahito Sugiura ,  Takashi Nishimori ,  Kohichi Satoh

发明人： Mitsuhiro Tachibana ,  Masahito Sugiura ,  Takashi Nishimori ,  Kohichi Satoh

IPC分类号： C23C16/06 ,  G05B13/02

CPC分类号： C23C16/14 ,  C23C16/45523 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A metal film with a lowered resistance by controlling a crystal structure. A tungsten film is formed through a first tungsten film formation in which a first tungsten film with amorphous content is formed by alternately executing multiple times a supplying a metal base material gas such as WF6 gas and supplying a hydrogen compound gas such as SiH4 gas, with a purge executed between the two gas supply by supplying an inert gas such as Ar gas or N2 gas and a second tungsten film formation in which a second tungsten film is formed by simultaneously supplying the WF6 gas and a reducing gas such as H2 gas onto the first tungsten film. The amorphous content in the first tungsten film is controlled by adjusting the length of time over which the purge is executed following the SiH4 gas supply.

摘要翻译： 通过控制晶体结构，具有降低的电阻的金属膜。 通过第一钨膜形成钨膜，其中通过交替执行多次提供诸如WF 6气体的金属基材气体并且将诸如SiH 4气体的氢化合物气体供应到第一钨膜，形成具有无定形含量的第一钨膜， 通过供给诸如Ar气体或N 2气体的惰性气体在两个气体供给之间执行的清洗以及通过同时将WF 6气体和诸如H 2气体的还原气体同时供给到第二钨膜形成的第二钨膜形成物 第一钨膜。 通过调节在SiH 4气体供应之后进行吹扫的时间长度来控制第一钨膜中的无定形含量。

公开(公告)号：US20090045517A1

公开(公告)日：2009-02-19

申请号：US11994339

申请日：2006-06-23

申请人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

发明人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

IPC分类号： H01L23/52 ,  C23C16/44 ,  H01L21/44

CPC分类号： C23C16/14 ,  C23C16/45527 ,  H01L21/28562 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76877

摘要： A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related art, is formed.The tungsten film is formed through a process in which a silicon-containing gas is delivered to a wafer M placed within a processing container 14 and a process executed after the silicon-containing gas supply process, in which a first tungsten film 70 is formed by alternately executing multiple times, a tungsten-containing gas supply step for supplying a tungsten-containing gas and a hydrogen compound gas supply step for supplying a hydrogen compound gas with no silicon content with a purge step in which an inert gas is supplied into the processing container and/or an evacuation step for evacuating the processing container executed between the tungsten-containing gas supply step and the hydrogen compound gas supply step.

摘要翻译： 形成了与通过现有技术中形成的钨膜相比，具有比其阻挡层更低的电阻率和较低的氟浓度的钨膜，其与通过相关技术形成的钨膜相比，以高可靠性粘附到阻挡层。 通过将含硅气体输送到放置在处理容器14内的晶片M和在含硅气体供给工序之后进行的工序，形成钨膜，其中第一钨膜70由 交替执行多次，用于提供含钨气体的含钨气体供给步骤和用于向不加入硅的氢化合物气体供给氢化合物气体的氢化合物气体供给步骤，其中向所述处理中供给惰性气体的净化步骤 容器和/或排气步骤，用于抽空在含钨气体供给步骤和氢气复合气体供给步骤之间执行的处理容器。

公开(公告)号：US6126753A

公开(公告)日：2000-10-03

申请号：US310132

申请日：1999-05-12

申请人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

发明人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/405 ,  C23C16/409 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4586

摘要： A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd).sub.2 and Sr(thd).sub.2, and a second process gas containing Ti(O-iPr)(thd).sub.2 or Ti(thd).sub.2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.

摘要翻译： 使用单基板处理CVD装置在半导体晶片上形成BST薄膜，同时供给包含Ba（thd）2和Sr（thd）2的混合物的第一工艺气体和含有Ti（ O-iPr）（thd）2或Ti（thd）2。 Ba和Sr的前体比Ti的前体具有更低的活化能和更高的电阻率。 第一和第二工艺气体由具有一组第一喷射孔的喷淋头供应，用于喷射第一处理气体和一组用于喷射第二处理气体的第二喷射孔。 第二喷射孔组被设计成具有从喷淋区域的中心向外径向逐渐减小的直径，使得以从中心向外径向逐渐减小的喷射速率供给第二处理气体。

公开(公告)号：US08168539B2

公开(公告)日：2012-05-01

申请号：US11994339

申请日：2006-06-23

申请人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

发明人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

IPC分类号： H01L21/44

CPC分类号： C23C16/14 ,  C23C16/45527 ,  H01L21/28562 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76877

摘要： A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related art, is formed. The tungsten film is formed through a process in which a silicon-containing gas is delivered to a wafer M placed within a processing container 14 and a process executed after the silicon-containing gas supply process, in which a first tungsten film 70 is formed by alternately executing multiple times, a tungsten-containing gas supply step for supplying a tungsten-containing gas and a hydrogen compound gas supply step for supplying a hydrogen compound gas with no silicon content with a purge step in which an inert gas is supplied into the processing container and/or an evacuation step for evacuating the processing container executed between the tungsten-containing gas supply step and the hydrogen compound gas supply step.

摘要翻译： 形成了与通过现有技术中形成的钨膜相比，具有比其阻挡层更低的电阻率和较低的氟浓度的钨膜，其与通过相关技术形成的钨膜相比，以高可靠性粘附到阻挡层。 通过将含硅气体输送到放置在处理容器14内的晶片M和在含硅气体供给工序之后进行的工序，形成钨膜，其中第一钨膜70由 交替执行多次，用于提供含钨气体的含钨气体供给步骤和用于向不加入硅的氢化合物气体供给氢化合物气体的氢化合物气体供给步骤，其中向所述处理中供给惰性气体的净化步骤 容器和/或排气步骤，用于抽空在含钨气体供给步骤和氢气复合气体供给步骤之间执行的处理容器。

公开(公告)号：US20060081186A1

公开(公告)日：2006-04-20

申请号：US11296225

申请日：2005-12-08

申请人： Hiroshi Shinriki ,  Masahito Sugiura

发明人： Hiroshi Shinriki ,  Masahito Sugiura

IPC分类号： C23C16/00

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/44 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604 ,  H01L28/56

摘要： An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.

摘要翻译： 在半导体晶片上形成由第一和第二钽氧化物层构成的绝缘膜。 首先，通过CVD形成非晶质第一层，并且进行用于除去第一层中所含有机杂质的重整工序。 然后，在第一层上通过CVD形成无定形第二层。 然后，通过在一定时间内将晶片加热至低于结晶温度的温度，将含有臭氧的工艺气体供给到处理室中，来进行用于除去第二层中所含有机杂质的重整工序。 此外，在相同的处理室内，将晶片依次加热至高于结晶温度的第二温度，然后将晶片冷却至低于结晶温度的温度，以使第一和第二层同时结晶。

公开(公告)号：US20050016687A1

公开(公告)日：2005-01-27

申请号：US10913531

申请日：2004-08-09

申请人： Hiroshi Shinriki ,  Masahito Sugiura

发明人： Hiroshi Shinriki ,  Masahito Sugiura

IPC分类号： C23C16/44 ,  C23C16/56 ,  H01L21/02 ,  H01L21/316 ,  C23F1/00

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/44 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604 ,  H01L28/56

摘要： An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.

摘要翻译： 在半导体晶片上形成由第一和第二钽氧化物层构成的绝缘膜。 首先，通过CVD形成非晶质第一层，并且进行用于除去第一层中所含有机杂质的重整工序。 然后，在第一层上通过CVD形成无定形第二层。 然后，通过在一定时间内将晶片加热至低于结晶温度的温度，将含有臭氧的工艺气体供给到处理室中，来进行用于除去第二层中所含有机杂质的重整工序。 此外，在相同的处理室内，将晶片依次加热至高于结晶温度的第二温度，然后将晶片冷却至低于结晶温度的温度，以使第一和第二层同时结晶。