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公开(公告)号：US20090288492A1
公开(公告)日：2009-11-26
申请号：US12126494
申请日：2008-05-23
CPC分类号： G01L9/0054 , G01L19/0038 , G01L19/147
摘要： A differential pressure sensor includes two pressure ports for allowing media to pass into contact with both the top and bottom sides of the diaphragm. A silicon pressure sensor die can be attached between the pressure ports using die attach materials for sensing a differential pressure between the media to evaluate media differential pressure. A cap with an opening can be placed on topside of a diaphragm formed in the silicon pressure die. The silicon pressure die can include die bond pads that can be electrically connected to the diaphragm to output electrical signals. The cap can seal the die bond pads from the harsh media and route the electrical signals therein. Media can pass through the opening in the cap such that a media path to the top of the diaphragm is not exposed to the die bond pads of the silicon pressure die to ensure long-term sensor reliability.
摘要翻译： 差压传感器包括两个压力端口，用于允许介质与隔膜的顶侧和底侧进行接触。 硅压力传感器模具可以使用管芯附接材料连接在压力端口之间，用于感测介质之间的压差以评估介质压差。 具有开口的盖可以放置在形成在硅压模中的隔膜的上侧。 硅压模可以包括可以与膜片电连接以输出电信号的管芯接合焊盘。 盖可以将密封焊盘从恶劣的介质密封并将电信号传送到其中。 介质可以穿过盖中的开口，使得到隔膜顶部的介质路径不暴露于硅压模的管芯接合焊盘，以确保长期的传感器可靠性。
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公开(公告)号：US20060157809A1
公开(公告)日：2006-07-20
申请号：US11038881
申请日：2005-01-20
申请人： Yousef Alimi , James Biard , Gilberto Morales
发明人： Yousef Alimi , James Biard , Gilberto Morales
CPC分类号： H01L43/065 , G01R33/077
摘要： A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more isolation layers. Additionally, an oxide layer can be formed above the epitaxial layer. A plurality of Hall effect elements can be formed within the epitaxial layer(s) and below the oxide layer, wherein the Hall effect elements sense the components of an arbitrary magnetic field in the plane of the wafer and perpendicular to the current flow in the hall element. A plurality of field plates can be formed above the oxide layer to control the inherited offset due to geometry control and processing of the vertical Hall effect apparatus, while preventing the formation of an output voltage of the vertical Hall effect apparatus at zero magnetic fields thereof.
摘要翻译： 一种垂直霍尔效应装置，包括其方法。 可以提供形成外延层的衬底层。 外延层被一个或多个隔离层垂直包围。 另外，可以在外延层的上方形成氧化物层。 多个霍尔效应元件可以形成在外延层内并在氧化物层的下面，其中霍尔效应元件感测晶片平面中任意磁场的分量，并垂直于霍尔电流中的电流 元件。 可以在氧化物层上方形成多个场板，以控制由于垂直霍尔效应装置的几何形状控制和处理而导致的遗传偏移，同时防止垂直霍尔效应装置的输出电压在其零磁场下形成。
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公开(公告)号：US06905900B1
公开(公告)日：2005-06-14
申请号：US09724820
申请日：2000-11-28
申请人： Ralph H. Johnson , Gilberto Morales
发明人： Ralph H. Johnson , Gilberto Morales
CPC分类号： H01S5/18391 , H01S5/18308 , H01S5/18311 , H01S5/18316 , H01S5/18369 , H01S5/18377 , H01S5/2063 , H01S2301/166
摘要： A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser) component (100) is disclosed, comprising a semiconductor substrate (102) having a lower surface and an upper surface, a bottom electrical contact (104) disposed along the lower surface of the substrate, a lower mirror (106) formed of n-type material and disposed upon the upper surface of the substrate, an active region (108) having a plurality of quantum wells disposed upon the lower mirror portion, an upper mirror (110) formed from isotropic material and disposed upon the active region, an equipotential layer (112) disposed upon the upper mirror portion, a first upper electrical contact (120) disposed upon the equipotential layer, a second upper electrical contact (122) disposed upon the equipotential layer at a particular distance (124) from the first upper electrical contact, a first isolation region (126) disposed beneath the first upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, a second isolation region (128) disposed beneath the second upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, and an insulating layer (114, 116) interposed between the upper mirror and the equipotential layer and adapted to form therebetween an aperture (118) of smaller dimension than the particular distance between the first and second upper contacts.
摘要翻译： 公开了一种用于提供单模VCSEL（垂直腔表面发射激光）部件（100）的系统和方法，包括具有下表面和上表面的半导体衬底（102），沿着 衬底的下表面，由n型材料形成并设置在衬底的上表面上的下反射镜（106），具有设置在下反射镜部分上的多个量子阱的有源区（108），上反射镜 （110），设置在所述有源区上，设置在所述上反射镜部分上的等电位层（112），设置在所述等电位层上的第一上电接触件（120），设置在所述等电位层 在距离第一上部电接触件的特定距离（124）处的等电位层处的第一隔离区域（126），其设置在第一上部接触件下方并且穿过等式 电位层，上反射镜，有源区和下反射镜，设置在第二上触点下方并穿过等电位层，上反射镜，有源区和下反射镜的第二隔离区（128） 绝缘层（114,116），其插入在上反射镜和等电位层之间，并且适于在其间形成比第一和第二上触点之间的特定距离更小尺寸的孔（118）。
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公开(公告)号：US06796193B2
公开(公告)日：2004-09-28
申请号：US10346774
申请日：2003-01-17
IPC分类号： H01L2100
CPC分类号： G01L9/0042 , G01L9/0055 , G01P2015/084
摘要： A method of forming a composite diaphragm for a pressure transducer is disclosed. The method comprises providing a substrate layer having a first conductivity type and a first surface. Positive implants are deposited in the first surface of the substrate layer, and an epitaxial layer is grown on the first surface of the substrate layer so that the positive implants form positive diffusions in the epitaxial layer. An oxide pattern is formed on the epitaxial layer, and a top layer is deposited over the epitaxial layer and oxide pattern. The substrate layer and positive diffusions of the epitaxial layer are then etched to form the composite diaphragm. The positive diffusions can be patterned so that the resulting etched structure has improved diaphragm performance characteristics. For example, the remaining pattern can include a plurality of bosses and interconnecting battens so that the diaphragm has a relatively high burst pressure and a high output signal with improved linearity at low pressures.
摘要翻译： 公开了形成用于压力传感器的复合膜片的方法。 该方法包括提供具有第一导电类型和第一表面的基底层。 阳极植入物沉积在衬底层的第一表面中，并且在衬底层的第一表面上生长外延层，使得阳性植入物在外延层中形成正扩散。 在外延层上形成氧化物图案，并且在外延层和氧化物图案上沉积顶层。 然后蚀刻衬底层和外延层的正扩散以形成复合膜。 可以对正扩散进行图案化，使得所得到的蚀刻结构具有改进的隔膜性能特性。 例如，剩余的图案可以包括多个凸台和互连的板条，使得隔膜具有相对较高的爆破压力和在低压下具有改善的线性度的高输出信号。
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公开(公告)号：US06626044B1
公开(公告)日：2003-09-30
申请号：US09677895
申请日：2000-10-03
申请人： Michael J. Haji-Sheikh , Richard Alan Davis , Mark Robert Plagens , Carl Edward Stewart , Gilberto Morales
发明人： Michael J. Haji-Sheikh , Richard Alan Davis , Mark Robert Plagens , Carl Edward Stewart , Gilberto Morales
IPC分类号： G01L708
CPC分类号： G01L19/0654 , G01L19/06
摘要： A sensor having freeze resistant features is disclosed. The sensor includes a sensor die and a buffer member that are assembled for attachment to a process fluid conduit. The buffer member defines an opening in fluid communication with the process fluid. The sensor die has a flexible diaphragm, and a capillary channel establishes fluid communication between the diaphragm area of the sensor die and the opening in the buffer member.
摘要翻译： 公开了一种具有防冻特征的传感器。 传感器包括传感器管芯和缓冲构件，其被组装用于附接到过程流体管道。 缓冲构件限定与过程流体流体连通的开口。 传感器管芯具有柔性隔膜，并且毛细通道在传感器管芯的隔膜区域和缓冲构件的开口之间建立流体连通。
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16.发明授权公开(公告)号：US07626377B2
公开(公告)日：2009-12-01
申请号：US12032763
申请日：2008-02-18
申请人： Wayne T. Kilian , Gilberto Morales
发明人： Wayne T. Kilian , Gilberto Morales
IPC分类号： G01R15/20
CPC分类号： H01L29/82 , G01R33/07 , H01L27/22 , H01L43/065
摘要： A Hall-effect device with a merged and/or non-merged complementary structure in order to cancel stress induced offsets includes an n-type epitaxial Hall element and a p-type Hall element. The p-type Hall element can be implanted directly on top of the n-type epitaxial Hall element. The merged Hall elements can be biased in parallel to provide a zero-bias depletion layer throughout for isolation. The output of the p-type Hall element can be connected to the geometrically corresponding output of the n-type epitaxial Hall element through a suitable resistance. The output signal can be taken at the outputs of the n-type element. The Hall-effect device can be constructed utilizing standard processes.
摘要翻译： 具有合并和/或非合并互补结构以消除应力引起的偏移的霍尔效应器件包括n型外延霍尔元件和p型霍尔元件。 p型霍尔元件可以直接注入在n型外延霍尔元件的顶部。 合并的霍尔元件可以平行偏置，以提供整个零偏压耗尽层用于隔离。 p型霍尔元件的输出可以通过适当的电阻连接到n型外延霍尔元件的几何相应的输出。 输出信号可以在n型元件的输出处获取。 霍尔效应装置可以利用标准方法构建。
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公开(公告)号：US20090096040A1
公开(公告)日：2009-04-16
申请号：US11973966
申请日：2007-10-11
CPC分类号： G01L19/146 , G01L19/04 , H01L2924/15151
摘要： The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package.
摘要翻译： 公开了用于改进封装应力隔离的传感器几何形状。 背板上的沉孔提高了传感器的应力隔离性能。 沉头孔沉浸在背板的壁上，保持与包装件的接触面积。 可以调节沉孔的深度和直径以找到允许背板吸收更多包装应力的几何形状。 使背板的壁变薄使其较不刚性，并且允许背板吸收在与封装的界面处产生的更多的应力。 沉孔还在背板的底部保持较大的表面积，从而与包装形成牢固的结合。
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18.发明授权Small gauge pressure sensor using wafer bonding and electrochemical etch stopping 有权使用晶圆接合和电化学蚀刻停止的小型压力传感器公开(公告)号：US07493822B2
公开(公告)日：2009-02-24
申请号：US11825237
申请日：2007-07-05
IPC分类号： G01L9/06
CPC分类号： G01L9/0042 , G01L9/0054
摘要： A gauge pressure sensor apparatus and a method of forming the same. A constraint wafer can be partially etched to set the diaphragm size, followed by bonding to a top wafer. The thickness of the top wafer is either the desired diaphragm thickness or is thinned to the desired thickness after bonding. The bonding of top wafer and constraint wafer enables electrochemical etch stopping. This allows the media conduit to be etched through the back of the constraint wafer and an electrical signal produced when the etching reaches the diaphragm. The process prevents the diaphragm from being over-etched. The invention allows the die size to be smaller than die where the diaphragm size is set by etching from the back side.
摘要翻译： 表压传感器装置及其形成方法。 可以部分地蚀刻约束晶片以设置膜片尺寸，然后粘结到顶部晶片。 顶部晶片的厚度是所需的隔膜厚度，或者在粘结后被减薄到所需的厚度。 顶部晶片和约束晶片的结合使得电化学蚀刻停止。 这允许介质管道被蚀刻通过约束晶片的背面和当蚀刻到达隔膜时产生的电信号。 该过程防止隔膜过度蚀刻。 本发明允许模具尺寸小于通过从背面蚀刻设置膜片尺寸的模具。
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公开(公告)号：US07205622B2
公开(公告)日：2007-04-17
申请号：US11038881
申请日：2005-01-20
IPC分类号： H01L29/82
CPC分类号： H01L43/065 , G01R33/077
摘要： A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more isolation layers. Additionally, an oxide layer can be formed above the epitaxial layer. A plurality of Hall effect elements can be formed within the epitaxial layer(s) and below the oxide layer, wherein the Hall effect elements sense the components of an arbitrary magnetic field in the plane of the wafer and perpendicular to the current flow in the hall element. A plurality of field plates can be formed above the oxide layer to control the inherited offset due to geometry control and processing of the vertical Hall effect apparatus, while preventing the formation of an output voltage of the vertical Hall effect apparatus at zero magnetic fields thereof.
摘要翻译： 一种垂直霍尔效应装置，包括其方法。 可以提供形成外延层的衬底层。 外延层被一个或多个隔离层垂直包围。 另外，可以在外延层的上方形成氧化物层。 多个霍尔效应元件可以形成在外延层内并在氧化物层的下面，其中霍尔效应元件感测晶片平面中任意磁场的分量，并垂直于霍尔电流中的电流 元件。 可以在氧化物层上方形成多个场板，以控制由于垂直霍尔效应装置的几何形状控制和处理而导致的遗传偏移，同时防止垂直霍尔效应装置的输出电压在其零磁场下形成。
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公开(公告)号：US06528340B2
公开(公告)日：2003-03-04
申请号：US09753834
申请日：2001-01-03
IPC分类号： H01L2100
CPC分类号： G01L9/0042 , G01L9/0055 , G01P2015/084
摘要： A method of forming a composite diaphragm for a pressure transducer is disclosed. The method comprises providing a substrate layer having a first conductivity type and a first surface. Positive implants are deposited in the first surface of the substrate layer, and an epitaxial layer is grown on the first surface of the substrate layer so that the positive implants form positive diffusions in the epitaxial layer. An oxide pattern is formed on the epitaxial layer, and a top layer is deposited over the epitaxial layer and oxide pattern. The substrate layer and positive diffusions of the epitaxial layer are then etched to form the composite diaphragm. The positive diffusions can be patterned so that the resulting etched structure has improved diaphragm performance characteristics. For example, the remaining pattern can include a plurality of bosses and interconnecting battens so that the diaphragm has a relatively high burst pressure and a high output signal with improved linearity at low pressures.
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