-
公开(公告)号：US20160365488A1
公开(公告)日：2016-12-15
申请号：US15236434
申请日：2016-08-13
Inventor： Anhe HE , Su-hui LIN , Jiansen ZHENG , Kangwei PENG , Xiaoxiong LIN , Chen-ke HSU
CPC classification number: H01L33/46 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0025
Abstract: A flip-chip light LED includes: a substrate; an epitaxial layer on the substrate, wherein, the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer and a light emitting layer between the first semiconductor layer and the second semiconductor layer; at least one opening structure, which is at the epitaxial layer edge and extends to the substrate surface, making parts of the side wall of the epitaxial layer and the substrate surface exposed, such that the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer on the opening structure as the metal electrode isolating layer.
Abstract translation: 倒装芯片LED包括：基板; 在所述衬底上的外延层，其中，所述外延层包括：第一半导体层，第二半导体层和在所述第一半导体层和所述第二半导体层之间的发光层; 至少一个开口结构，其处于外延层边缘并延伸到衬底表面，使得外延层的侧壁的部分和衬底表面暴露，使得外延层被分为外延体层和 屏障结构; 以及作为金属电极隔离层的开口结构上的绝缘层。
-
公开(公告)号：US20180076152A1
公开(公告)日：2018-03-15
申请号：US15810076
申请日：2017-11-12
Inventor： Gaolin ZHENG , Ling-yuan HONG , Xiaoxiong LIN , Feng WANG , Su-hui LIN , Chia-hung CHANG
CPC classification number: H01L23/60 , H01L27/153 , H01L33/0079 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L33/648 , H01L2933/0016
Abstract: A fabrication method of a high-voltage light-emitting diode includes the steps of providing a substrate, and forming a light-emitting epitaxial laminated layer on the substrate; patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows; fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line; fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode; and fabricating an insulating protective layer opening at the channel where the potential difference of any two adjacent light-emitting diodes is ≧3 times of the forward voltage of a single light-emitting diode to avoid breakdown of the light-emitting epitaxial laminated layer.
-
公开(公告)号：US20170263812A1
公开(公告)日：2017-09-14
申请号：US15607461
申请日：2017-05-27
Inventor： Chia-hung CHANG , Gong CHEN , Su-hui LIN , Kang-wei PENG , Sheng-hsien HSU , Chuan-gui LIU , Xiao-xiong LIN , Yu ZHOU , Jing-jing WEI , Jing HUANG
CPC classification number: H01L33/025 , H01L27/15 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/60
Abstract: An LED fabrication method includes forming impurity release holes by focusing a laser at the substrate back surface, and forming invisible explosion points by focusing a laser inside the substrate on positions corresponding to the impurity release holes; communicating the impurity release holes with the invisible explosion points to release impurities generated during forming of the invisible explosion points from the substrate through the impurity release holes, thereby avoiding low external quantum efficiency resulting from adherence of impurities to the side wall of the invisible explosion points. By focusing on a position with 10 μm˜40 ˜m inward from the substrate back side, adjusting laser energy and frequency to burn holes inside the substrate to penetrate and expose the substrate back surface, thereby effectively removing by-products, and reducing light absorption by such by-products, light extraction from a side wall of the LED can also be improved and light extraction efficiency is enhanced.
-
-
Search Results
13
records
(took 0.013 seconds)
