公开(公告)号：US20110294295A1

公开(公告)日：2011-12-01

申请号：US12969998

申请日：2010-12-16

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

IPC分类号： H01L21/311

CPC分类号： B81C1/00031

摘要： A method for making a three-dimensional nano-structure array includes following steps. First, a substrate is provided. Next, a mask is formed on the substrate. The mask is a monolayer nanosphere array or a film defining a number of holes arranged in an array. The mask is then tailored and simultaneously the substrate is etched by the mask. Lastly, the mask is removed.

摘要翻译： 制造三维纳米结构阵列的方法包括以下步骤。 首先，提供基板。 接着，在基板上形成掩模。 掩模是单层纳米球阵列或限定排列成阵列的多个孔的膜。 然后调整掩模并同时通过掩模蚀刻基底。 最后，去除面具。

公开(公告)号：US20130167899A1

公开(公告)日：2013-07-04

申请号：US13556280

申请日：2012-07-24

申请人： YUAN-HAO JIN ,  QUN-QING LI ,  SHOU-SHAN FAN

发明人： YUAN-HAO JIN ,  QUN-QING LI ,  SHOU-SHAN FAN

IPC分类号： H01L31/05 ,  H01L31/0352

CPC分类号： H01L31/043 ,  H01L31/035281 ,  H01L31/042 ,  H01L31/047 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes an integrated structure. The integrated structure includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer arranged in the above sequence. At least one curved surface is defined on the integrated structure. The integrated structure includes a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; and a photoreceptive surface exposing the P-N junction. The photoreceptive surface is one the at least one curved surface of the integrated structure and is configured to receive incident light beams.

摘要翻译： 太阳能电池包括一体化结构。 该集成结构包括以上述顺序排列的第一电极层，P型硅层，N型硅层和第二电极层。 集成结构上限定了至少一个曲面。 该集成结构包括在P型硅层和N型硅层之间的界面附近的P-N结; 以及暴露P-N结的感光表面。 感光表面是集成结构的至少一个弯曲表面中的一个，并且被配置为接收入射光束。

公开(公告)号：US20130143342A1

公开(公告)日：2013-06-06

申请号：US13479234

申请日：2012-05-23

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

IPC分类号： H01L33/22

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/005 ,  H01L33/24

摘要： A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.

摘要翻译： 提供一种制造发光二极管的方法。 该方法包括以下步骤。 提供基板。 在衬底的表面上生长第一半导体层。 图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。 暴露的第一半导体层被蚀刻以形成突出的一对。 通过去除图案化掩模层形成多个三维纳米结构。 在三维纳米结构的数量上依次生长有源层和第二半导体层。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。

公开(公告)号：US20130143340A1

公开(公告)日：2013-06-06

申请号：US13479229

申请日：2012-05-23

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

IPC分类号： H01L33/06 ,  B82Y40/00

CPC分类号： H01L33/0079 ,  H01L33/0066 ,  H01L33/06 ,  H01L33/22 ,  H01L33/24

摘要： A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.

摘要翻译： 制造发光二极管的方法包括以下步骤。 提供基板。 在衬底的表面上生长第一半导体层。 图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。 暴露的第一半导体层被蚀刻以形成突出的一对。 通过去除图案化掩模层形成多个三维纳米结构。 在三维纳米结构的数量上依次生长有源层和第二半导体层。 第一电极与第一半导体层电连接。 第二电极被定位成覆盖远离有源层的第二半导体层的整个表面。

公开(公告)号：US20130140596A1

公开(公告)日：2013-06-06

申请号：US13479233

申请日：2012-05-23

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

IPC分类号： H01L33/22

CPC分类号： H01L33/24 ,  H01L33/005

摘要： A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

摘要翻译： 提供了包括第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。 第一电极覆盖第一半导体层的整个表面。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面为M形。

公开(公告)号：US20130140594A1

公开(公告)日：2013-06-06

申请号：US13479223

申请日：2012-05-23

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

IPC分类号： H01L33/22

CPC分类号： H01L33/24 ,  H01L33/20 ,  H01L33/382

摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.

摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 远离有源层的衬底的表面被配置为发光表面。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上。 第一电极与第一半导体层电连接。 第二电极与第二半导体层的表面电连接并覆盖其表面。 多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。

公开(公告)号：US20130140520A1

公开(公告)日：2013-06-06

申请号：US13479230

申请日：2012-05-23

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

IPC分类号： H01L33/06 ,  B82Y20/00

CPC分类号： H01L33/24 ,  H01L33/06 ,  H01L33/22

摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 衬底包括外延生长表面和发光表面。 第一半导体层，有源层和第二半导体层堆叠在外延生长表面上。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面为M形。

公开(公告)号：US20130087526A1

公开(公告)日：2013-04-11

申请号：US13340221

申请日：2011-12-29

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  YUAN-HAO JIN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  YUAN-HAO JIN ,  SHOU-SHAN FAN

IPC分类号： B29C59/14 ,  B82Y40/00

CPC分类号： B81C1/00111 ,  B82Y40/00 ,  G03F7/0002

摘要： A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.

摘要翻译： 提供了制备三维纳米结构阵列的方法。 该方法包括以下步骤。 提供基地。 掩模层位于基座上。 掩模层被图案化，并且在掩模层的表面上形成多个条形突起结构，在突出结构的数量的两个相邻的突出结构中的每一个之间限定许多以暴露基部的一部分。 基底的暴露部分通过狭槽被蚀刻，使得两个相邻的突出结构中的每一个开始面对面地倾斜，直到它们彼此接触以形成突出的对。 去除掩模层。

公开(公告)号：US20120326109A1

公开(公告)日：2012-12-27

申请号：US13332480

申请日：2011-12-21

申请人： PENG LIU ,  QUN-QING LI ,  KAI-LI JIANG ,  SHOU-SHAN FAN

发明人： PENG LIU ,  QUN-QING LI ,  KAI-LI JIANG ,  SHOU-SHAN FAN

IPC分类号： H01L45/00

CPC分类号： H01L45/1226 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/144

摘要： A phase change memory cell includes a first circuit and a second circuit. The first circuit comprises a first electrode, a carbon nanotube layer and a second electrode electrically connected in series. The first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell. The second circuit comprises a third electrode, a phase change layer and a fourth electrode electrically connected in series, at least part of the phase change layer is overlapped with the carbon nanotube layer. The second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell.

摘要翻译： 相变存储单元包括第一电路和第二电路。 第一电路包括第一电极，碳纳​​米管层和串联电连接的第二电极。 第一电路适于将数据写入相变存储单元或复位相变存储单元。 第二电路包括第三电极，相变层和串联电连接的第四电极，至少部分相变层与碳纳米管层重叠。 第二电路适于从相变存储单元读取数据或者复位相变存储单元。

公开(公告)号：US20120167938A1

公开(公告)日：2012-07-05

申请号：US13113203

申请日：2011-05-23

申请人： SHOU-SHAN FAN ,  YUAN-HAO JIN ,  QUN-QING LI

发明人： SHOU-SHAN FAN ,  YUAN-HAO JIN ,  QUN-QING LI

IPC分类号： H01L31/042 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/02168 ,  H01L31/022425 ,  H01L31/047 ,  H01L31/068 ,  Y02E10/547

摘要： A solar cell includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer. The first electrode layer, the P-type silicon layer, the N-type silicon layer, and the second electrode layer are arranged in series side by side along a straight line and in contact with each other, thereby cooperatively forming a planar structure. The planar structure has a photoreceptive surface substantially parallel to the straight line and directly receives an incident light. A P-N junction is formed near an interface between the P-type silicon layer and the N-type silicon layer.

摘要翻译： 太阳能电池包括第一电极层，P型硅层，N型硅层和第二电极层。 第一电极层，P型硅层，N型硅层和第二电极层沿着直线并排布置并彼此接触，从而协同地形成平面结构。 平面结构具有基本平行于直线的感光表面，并直接接收入射光。 在P型硅层和N型硅层之间的界面附近形成P-N结。