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123 条记录 (耗时 0.037 秒)

    Semiconductor pressure transducer
    11.
    发明授权
    Semiconductor pressure transducer 失效
    半导体压力传感器

    公开(公告)号：US4050313A

    公开(公告)日：1977-09-27

    申请号：US692368

    申请日：1976-06-03

    申请人： Satoshi Shimada ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Ichiro Kimura ,  Michitaka Shimazoe ,  Yukio Takahashi

    发明人： Satoshi Shimada ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Ichiro Kimura ,  Michitaka Shimazoe ,  Yukio Takahashi

    IPC分类号： G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/0054

    摘要： A semiconductor pressure transducer comprises a circular diaphragm formed of a single crystal semiconductor material, at least a first strain gauge element having a piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in parallel with a predetermined axis which extends transversely of the surface of the diaphragm, at least a second strain gauge element having the piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in the direction perpendicular to the axis, and means for securing the diaphragm at the outer peripheral portion thereof. The distance between the second strain gauge element and the center of the diaphragm is differed from the distance between the center of the first strain gauge element and the latter.

    摘要翻译： 半导体压力传感器包括由单晶半导体材料形成的圆形隔膜，至少第一应变计元件，具有压阻效应，并且通过在与横向延伸的预定轴线平行延伸的线性区域中注入杂质形成。 至少一个具有压电效应的第二应变计元件，并且通过在垂直于该轴线的方向上延伸的线性区域中将杂质注入到隔膜中而形成，以及用于将隔膜固定在外周的装置 部分。 第二应变计元件与隔膜的中心之间的距离与第一应变计元件的中心与后者之间的距离不同。

    Semiconductor transducer
    12.
    发明授权
    Semiconductor transducer 失效
    半导体传感器

    公开(公告)号：US4151502A

    公开(公告)日：1979-04-24

    申请号：US787841

    申请日：1977-04-15

    申请人： Yasutoshi Kurihara ,  Tetuo Kosugi ,  Teruyuki Kagami ,  Satoshi Shimada ,  Yasumasa Matsuda ,  Kazuji Yamada

    发明人： Yasutoshi Kurihara ,  Tetuo Kosugi ,  Teruyuki Kagami ,  Satoshi Shimada ,  Yasumasa Matsuda ,  Kazuji Yamada

    IPC分类号： G01B7/16 ,  G01L1/22 ,  G01L9/00 ,  H01L29/84 ,  G01B11/16

    CPC分类号： G01L1/2293 ,  G01L9/0002 ,  H01L29/84 ,  Y10S73/04 ,  Y10T29/49103

    摘要： A semiconductor transducer comprises a semiconductor strain gauge composed of a mono-crystalline semiconducting material and a strain sensing region formed in a first main surface of the mono-crystalline semiconducting material, and a strain measuring member coupled to the semiconductor strain gauge through an alloy material. An electrical insulating layer is attached to a second main surface of the mono-crystalline semiconducting material which is coupled to the strain measuring member through the alloy material. The insulating layer is extended to a side surface of the mono-crystalline semiconducting material thereby to cover the same side.

    摘要翻译： 半导体换能器包括由单晶半导体材料构成的半导体应变计和形成在单晶半导体材料的第一主表面中的应变感测区域，以及通过合金材料耦合到半导体应变计的应变测量构件 。 电绝缘层连接到单晶半导体材料的第二主表面，该第二主表面通过合金材料耦合到应变测量部件。 绝缘层延伸到单晶半导体材料的侧表面，从而覆盖同一侧。

    Differential pressure transmitter
    13.
    发明授权
    Differential pressure transmitter 失效
    差压变送器

    公开(公告)号：US4342231A

    公开(公告)日：1982-08-03

    申请号：US217025

    申请日：1980-12-16

    申请人： Yoshimi Yamamoto ,  Yoshitaka Matsuoka ,  Syozo Kasai ,  Yukio Takahashi ,  Takeo Nagata ,  Akira Nagasu ,  Tomomasa Yoshida ,  Satoshi Shimada

    发明人： Yoshimi Yamamoto ,  Yoshitaka Matsuoka ,  Syozo Kasai ,  Yukio Takahashi ,  Takeo Nagata ,  Akira Nagasu ,  Tomomasa Yoshida ,  Satoshi Shimada

    IPC分类号： G01L9/00 ,  G01L13/02 ,  G01L7/08 ,  G01L9/06

    CPC分类号： G01L19/147 ,  G01L13/025 ,  G01L19/0038 ,  G01L19/0645 ,  G01L19/142

    摘要： A differential pressure transmitter has a pressure receiving portion and a sensor portion which are constituted from separate parts separably jointed with each other. The sensor portion includes a semiconductor sensor having one side formed with a resistance pattern and the other side which has a thick-walled peripheral portion and a thick-walled central portion. The semiconductor sensor is incorporated in the sensor portion as being supported at the thick-walled peripheral portion thereof. The pressure receiving portion includes seal diaphragms disposed on both sides of the pressure receiving portion and a central diaphragm disposed therein. The semiconductor sensor is arranged such that the side thereof carrying the resistance pattern faces the pressure receiving portion.

    摘要翻译： 差压变送器具有压力接收部分和传感器部分，该压力接收部分和传感器部分由可分离地彼此连接的分开的部分构成。 传感器部分包括半导体传感器，其一侧形成有电阻图案，另一侧具有厚壁周边部分和厚壁中心部分。 半导体传感器被并入传感器部分中，被支撑在其厚壁周边部分。 受压部分包括设置在压力接收部分两侧的密封膜片和设置在其中的中心膜片。 半导体传感器被布置成使得其携带电阻图案的一侧面向压力接收部分。

    Capacitive pressure sensor
    15.
    发明授权
    Capacitive pressure sensor 失效
    电容式压力传感器

    公开(公告)号：US4257274A

    公开(公告)日：1981-03-24

    申请号：US59552

    申请日：1979-07-23

    申请人： Satoshi Shimada ,  Kanji Kawakami ,  Motohisa Nishihara

    发明人： Satoshi Shimada ,  Kanji Kawakami ,  Motohisa Nishihara

    IPC分类号： G01L9/12 ,  G01L9/00 ,  G01L13/02

    CPC分类号： G01L13/025 ,  G01L9/0042 ,  G01L9/0072 ,  G01L9/0073

    摘要： A capacitive pressure sensor is provided which has a conductive silicon diaphragm having a thick supporting portion at the periphery thereof and a thin inner deflecting portion which is reduced in thickness from the supporting portion by means of an etching process which makes possible a very accurate dimensioning of the hollow formed by the deflecting portion of the diaphragm. A substrate of borosilicate glass has a flat surface which is placed against the side of the diaphragm in contact with the supporting portion and the two elements are joined by a process of anodic bonding so that a pressure chamber is formed between the substrate and the thin deflecting portion of the diaphragm. Within the pressure chamber, a thin electrode is provided on the surface of the substrate thereby forming electrostatic capacity between the substrate and the diaphragm and a hole is provided through the substrate for supplying of fluid into the pressure chamber.

    摘要翻译： 提供一种电容式压力传感器，其具有导电硅膜片，其外围具有厚的支撑部分，以及薄的内部偏转部分，其通过蚀刻工艺从支撑部分减小厚度，这使得可能非常精确的尺寸 由隔膜的偏转部分形成的中空部。 硼硅酸盐玻璃的基板具有平坦表面，该平坦表面抵靠隔膜的与支撑部分接触的一侧放置，并且两个元件通过阳极接合的过程相连，使得在基板和薄偏转之间形成压力室 隔膜的一部分。 在压力室内，在基板的表面上设置有薄的电极，从而在基板和隔膜之间形成静电电容，并且通过基板设置有用于向压力室供给流体的孔。

    Method of making silicon diaphragm pressure sensor
    16.
    发明授权
    Method of making silicon diaphragm pressure sensor 失效
    制造硅膜压力传感器的方法

    公开(公告)号：US4670969A

    公开(公告)日：1987-06-09

    申请号：US694990

    申请日：1985-01-25

    申请人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

    发明人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

    IPC分类号： H01L29/84 ,  G01L9/00 ,  G01P15/08 ,  H01L21/428

    CPC分类号： G01L9/0042 ,  G01P15/0802 ,  G01P2015/084 ,  Y10S148/012 ,  Y10S148/159 ,  Y10S148/168 ,  Y10T29/42 ,  Y10T29/49103

    摘要： A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.

    摘要翻译： 制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。 在氧化物膜上形成多晶硅层。 在形成多晶硅层之前可以部分地去除氧化膜。 将多晶硅层加热熔化，使其重结晶，从而将多晶硅层转化为单晶硅层。 在单晶硅层上可以外延生长另外的单晶硅层。 通过使用氧化膜作为蚀刻停止层，在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分，从而提供压力传感器的隔膜。

    Semiconductor pressure transducer
    17.
    发明授权
    Semiconductor pressure transducer 失效
    半导体压力传感器

    公开(公告)号：US4065971A

    公开(公告)日：1978-01-03

    申请号：US701531

    申请日：1976-07-01

    申请人： Michitaka Shimazoe ,  Kousuke Nakamura ,  Yasuo Matsushita ,  Satoshi Shimada ,  Kazuji Yamada ,  Yukio Takahashi

    发明人： Michitaka Shimazoe ,  Kousuke Nakamura ,  Yasuo Matsushita ,  Satoshi Shimada ,  Kazuji Yamada ,  Yukio Takahashi

    IPC分类号： H01L29/84 ,  G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/0054

    摘要： A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.

    摘要翻译： 半导体压力传感器包括其外边缘固定的单晶半导体膜片。 当经受压力时，换能器在其中心部分产生相反极性的径向应变，并且围绕中心部分的部分靠近应变诱导区域的边缘产生。 隔膜包含由与膜片电气隔离的相同导电类型的半导体材料形成的多个细长电阻。 位于彼此靠近的单个组的电阻以桥的形式组合。 形成桥的一组相对臂的电阻的纵向方向沿与构成桥的另一组相对臂的细长电阻的纵向相同的晶体系的轴线延伸。 然而，形成桥的相对臂的单独的电阻组的纵向方向在方向上，使得它们不会彼此正交相交。

    Video decoding apparatus and method
    20.
    发明授权
    Video decoding apparatus and method 有权
    视频解码装置及方法

    公开(公告)号：US09191676B2

    公开(公告)日：2015-11-17

    申请号：US13611742

    申请日：2012-09-12

    申请人： Satoshi Shimada ,  Kimihiko Kazui ,  Junpei Koyama ,  Akira Nakagawa

    发明人： Satoshi Shimada ,  Kimihiko Kazui ,  Junpei Koyama ,  Akira Nakagawa

    IPC分类号： H04N7/12 ,  H04N11/02 ,  H04N11/04 ,  H04N19/196 ,  H04N19/52 ,  H04N19/51 ,  H04N19/593

    CPC分类号： H04N19/198 ,  H04N19/51 ,  H04N19/52 ,  H04N19/593

    摘要： A video decoding apparatus according to one aspect of the disclosure performs a decoding process, on a process block basis, using a motion vector of the process block and prediction information candidates of the motion vector. The video decoding apparatus includes a first prediction information candidate generating part configured to acquire the prediction information of the adjacent block to generate the prediction information candidate if motion compensation of the block is performed using the same prediction information as the prediction information of the adjacent block; and a second prediction information candidate generating part configured to add prediction information to the prediction information candidates if the number of the prediction information candidates is less than a predetermined number and two prediction information items of the prediction information candidates have the reference picture identifiers indicating the same picture, the added prediction information including an averaged motion vector of two motion vectors.

    摘要翻译： 根据本公开的一个方面的视频解码装置在处理块的基础上，使用处理块的运动矢量和运动矢量的预测信息候选来进行解码处理。 视频解码装置包括第一预测信息候补生成部，被配置为获取相邻块的预测信息以生成预测信息候选，如果使用与相邻块的预测信息相同的预测信息来执行块的运动补偿; 以及第二预测信息候选生成部，被配置为如果所述预测信息候选的数量少于预定数量而将预测信息添加到所述预测信息候选，并且所述预测信息候选的两个预测信息项具有指示相同的参考图像标识符 图像，添加的预测信息包括两个运动矢量的平均运动矢量。