摘要:
A semiconductor module has a plurality of power semiconductor devices mounted on a substrate, and a metal foil for wiring is mounted on the substrate so that an asymmetric unit arrangement of the semiconductor devices is formed. In the device, all of the units are arranged in the same direction on the substrate, and all of the units are electrically connected with electrode terminal feet, and the electrode terminal feet are electrically connected with linkage terminal foot. The electrode terminal feet are disposed with a certain interval.
摘要:
A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要:
A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要翻译:一种半导体器件,其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上,所述绝缘体衬底在主表面上形成多个电极图案,所述半导体元件的每个电极电连接到所述电极图案, 绝缘体基板的另一表面被结合到散热基底上,散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件,将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧,散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数,小于半导体元件的线膨胀系数的3倍,导热系数 大于100 W / mK,半音 电感元件布置在至少一个电极表面上,并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。
摘要:
A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要翻译:一种半导体器件,其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上,所述绝缘体衬底在主表面上形成多个电极图案,所述半导体元件的每个电极电连接到所述电极图案, 绝缘体基板的另一表面被结合到散热基底上,散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件,将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧,散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数,小于半导体元件的线膨胀系数的3倍,导热系数 大于100 W / mK,半音 电感元件布置在至少一个电极表面上,并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。
摘要:
A power semiconductor module having a power circuit unit; a metal base for sealing the bottom of the module; an insulation substrate for electrically insulating the metal base from the power circuit unit; external input and output terminals connected to the power circuit unit; a resin case in which the external input and output terminals are inserted by integral molding; and a resin encapsulant material has been improved substantially in its reliability through provision of a nut integrally molded with the resin case for fastening the external input and output terminals with a screw; a metal base inserted in the resin case by integral molding; and a recess to receive the end of the screw located immediately below the nut, the recess extending without penetrating the resin case, and the metal base extending to an area below the recess.
摘要:
A semiconductor device includes a main circuit part having a semiconductor device formed on an electrode plate of a lead frame and a control circuit part having protective functions, which is integrally molded by a resin mold part into an integral mold structure.
摘要:
A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4±0.05 mmφ, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.
摘要:
A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4±0.05 mmφ, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.
摘要:
It is possible to control a welding in a high speed and a high precision large electric current, and consumption electric power is also reduced. In the welding transformer, a loop magnetic core 25, a wound primary coil 12, plural positive side coils 14 and plural negative side coils 16 that are alternately sandwiched between respective gaps 12a of the primary coil 12, are comprised. A coil is fixed on the other surface of a contact base member 62. On the other surface of the contact base member 62, a first connection polar board 44 is electrically connected to a positive side electric conductor 30 through the first connection polar board 44. A negative side coil 16 is electrically connected to a negative side electric conductor 32. The connecting part of the positive side coil 14 and the negative side coil 16 is electrically connected to the third connection polar board 48. By sandwiching a thin insulation layer 31, a positive side electric conductor 30, a rectifying device 18 and a first polar board 34 are arranged on one side; A negative side electric conductor 32, a rectifying device 20 and a second polar board 36 are arranged on the other side; and the first polar board 34 and the second polar board 36 are electrically connected to a third polar board 38. It is possible to use by combining plural units and by connecting an output side in parallel in a small size and a large capacity.
摘要:
An information processing apparatus that acquires first posture information corresponding to the information processing apparatus and a first distance coordinate corresponding to the information processing apparatus, and second posture information corresponding to another information processing apparatus and a second distance coordinate corresponding to the another information processing apparatus. The information processing apparatus then calculates an object's position in a virtual space based on the first and second posture information and the first and second distance coordinates.