摘要:
A wafer edge exposure unit comprises a chuck for supporting a wafer. The chuck is rotatable about a central axis. A plurality of light sources are positioned or movably positionable with a common radial distance from the axis of the rotatable chuck, each light source configured to direct exposure light on a respective edge portion of the wafer simultaneously.
摘要:
A method including: providing collinear first and second lines in a mask layer over a substrate, the first line having at one end a first line end and having a first line body adjacent the first line end, and the second line having at one end a second line end and having a second line body adjacent the second line end; measuring line widths of the first line body and the second line body; locating effective line end positions for the first line end based on the line width of the first line body and for the second line end based on the line width of the second line body; and measuring a distance between the effective line end positions, as an effective line end spacing.
摘要:
The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired.
摘要:
The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process.
摘要:
A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
摘要:
A method includes receiving an integrated circuit chip size and determining a frame structure segment size based on the chip size. The frame structure segment size is less than the chip size. An initial shot layout having a chip count is established in which a number of shots, each including at least one frame structure segment and at least one chip, are arranged in vertically and horizontally aligned columns and rows. At least one additional shot layout is established in which at least one of a row or column of shots is offset from an adjacent row or column of shots. The initial shot layout is compared to the at least one additional shot layout, and a final shot layout is selected based in part on the total number of shots in the shot layout and has a final chip count that is greater than or equal to the initial chip count.
摘要:
A method of inhibiting photoresist pattern collapse which includes the steps of providing a substrate; providing a photoresist layer on the substrate; exposing and developing the photoresist layer; applying a top anti-reflective coating layer to the photoresist layer; rinsing the photoresist layer; and drying the photoresist layer.
摘要:
The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping.
摘要:
A method includes receiving an integrated circuit chip size and determining a frame structure segment size based on the chip size. The frame structure segment size is less than the chip size. An initial shot layout having a chip count is established in which a number of shots, each including at least one frame structure segment and at least one chip, are arranged in vertically and horizontally aligned columns and rows. At least one additional shot layout is established in which at least one of a row or column of shots is offset from an adjacent row or column of shots. The initial shot layout is compared to the at least one additional shot layout, and a final shot layout is selected based in part on the total number of shots in the shot layout and has a final chip count that is greater than or equal to the initial chip count.
摘要:
One embodiment relates to a method for semiconductor workpiece processing. In this method, a baseline tool induced shift (TIS) is measured by performing a baseline number of TIS measurements on a first semiconductor workpiece. After the baseline TIS has been determined, the method determines a subsequent TIS based on a subsequent number of TIS measurements taken on a first subsequent semiconductor workpiece. The subsequent number of TIS measurements is less than the baseline number of TIS measurements.