公开(公告)号：US20110164226A1

公开(公告)日：2011-07-07

申请号：US12885701

申请日：2010-09-20

Applicant: Tai-Feng Wu ,  Ching-Chang Chen ,  Yu-Jen Wang ,  Ming-Chieh Chou

Inventor： Tai-Feng Wu ,  Ching-Chang Chen ,  Yu-Jen Wang ,  Ming-Chieh Chou

IPC: G06K9/36 ,  G03B21/14

CPC classification number: H04N9/3185 ,  G06K2009/363 ,  H04N9/3173

Abstract: A method for projection correction includes following steps. An original image is projected as a projection image on an object. A projection-zone image including the projection image is captured from the object. A projection image outline corresponding to the projection image is obtained from the projection-zone image. An operation is performed on the projection image outline to obtain a horizontal inclination and a vertical inclination. The original image is pre-warped according to the horizontal inclination and the vertical inclination to obtain a corrected image, and the corrected image is projected on the object.

Abstract translation: 投影校正的方法包括以下步骤。 将原始图像投影为物体上的投影图像。 从对象捕获包括投影图像的投影区域图像。 从投影区域图像获得与投影图像对应的投影图像轮廓。 对投影图像轮廓进行操作以获得水平倾斜度和垂直倾斜度。 原始图像根据水平倾斜度和垂直倾斜度预弯曲以获得校正图像，并且将校正后的图像投影在物体上。

公开(公告)号：US20110074563A1

公开(公告)日：2011-03-31

申请号：US12631502

申请日：2009-12-04

Applicant: Pin Chang ,  Yu-Jen Wang ,  Chien Li ,  Chung-De Chen ,  Pei-Fen Wu

Inventor： Pin Chang ,  Yu-Jen Wang ,  Chien Li ,  Chung-De Chen ,  Pei-Fen Wu

IPC: B62J6/00 ,  B62J6/06 ,  F03G7/08 ,  G01P3/16

CPC classification number: G01P3/16 ,  B62J6/003 ,  B62J6/06 ,  B62J6/20 ,  F03G7/08

Abstract: The present disclosure provides a swinging device having a swinging mechanism disposed on an energy provider, wherein volume and shape of the swinging mechanism and a distance between the swinging mechanism and the energy provider are adjusted so as to control the ratio of the distance and a characteristic value corresponding to the swinging mechanism in a specific range such that the swinging mechanism is capable of resonating with respect to the rotation of the energy provider. The swinging mechanism is capable of detecting the rotating frequency of the energy provider as well as combining with a display unit which is capable of displaying information with respect to the rotating status or displaying image patterns controlled according to the rotating status.

Abstract translation: 本公开提供了一种具有设置在能量提供者上的摆动机构的摆动装置，其中调节摆动机构的体积和形状以及摆动机构和能量提供者之间的距离，以便控制距离和特性的比率 相应于摆动机构的特定范围的值，使得摆动机构能够相对于能量提供者的旋转而谐振。 摆动机构能够检测能量提供者的旋转频率，以及与能够显示关于旋转状态的信息的显示单元或显示根据旋转状态控制的图像模式的组合。

公开(公告)号：US07851324B2

公开(公告)日：2010-12-14

申请号：US11586528

申请日：2006-10-26

Applicant: Yu-Jen Wang ,  Chia-Shiung Tsai ,  Yeur-Luen Tu ,  Lan-Lin Chao ,  Chih-Ta Wu ,  Hsing-Lien Lin ,  Chung Chien Wang

Inventor： Yu-Jen Wang ,  Chia-Shiung Tsai ,  Yeur-Luen Tu ,  Lan-Lin Chao ,  Chih-Ta Wu ,  Hsing-Lien Lin ,  Chung Chien Wang

IPC: H01L29/94

CPC classification number: H01L28/60 ,  H01L21/321

Abstract: A method of manufacturing a semiconductor device includes forming a metal-insulator-metal (MIM) device having a metal organic chemical vapor deposited (MOCVD) lower electrode and an atomic layer deposited (ALD) upper electrode.

Abstract translation: 一种制造半导体器件的方法包括形成具有金属有机化学气相沉积（MOCVD）下电极和原子层沉积（ALD）上电极的金属 - 绝缘体 - 金属（MIM）器件。

公开(公告)号：US20100214825A1

公开(公告)日：2010-08-26

申请号：US12617982

申请日：2009-11-13

Applicant: Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

Inventor： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

IPC: G11C11/00 ,  G11C7/00

CPC classification number: G11C11/1677 ,  G11C11/1675

Abstract: A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.

Abstract translation: 写入磁阻随机存取存储器（MRAM）单元的方法包括提供写入脉冲以将值写入MRAM单元; 以及在提供第一写入脉冲的步骤之后立即验证MRAM单元的状态。 在写入失败的情况下，该值被重写到MRAM单元中。

公开(公告)号：US20090209050A1

公开(公告)日：2009-08-20

申请号：US12032973

申请日：2008-02-18

Applicant: Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

Inventor： Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

IPC: H01L21/00

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L43/08 ,  H01L43/12

Abstract: A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.

Abstract translation: 形成集成电路的方法包括形成磁隧道结（MTJ）层; 蚀刻MTJ层以形成MTJ电池; 以及在MTJ电池的侧壁上形成电介质覆盖层，其中形成电介质覆盖层的步骤是用蚀刻MTJ层的步骤进行的。

公开(公告)号：US07573736B2

公开(公告)日：2009-08-11

申请号：US11752157

申请日：2007-05-22

Applicant: Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

Inventor： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

IPC: G11C11/00

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675

Abstract: The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

Abstract translation: 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面积。

公开(公告)号：US20080310214A1

公开(公告)日：2008-12-18

申请号：US11764618

申请日：2007-06-18

Applicant: Yu-Jen Wang ,  Hsu-Chen Chang ,  Denny Tang

Inventor： Yu-Jen Wang ,  Hsu-Chen Chang ,  Denny Tang

IPC: G11C11/00

CPC classification number: G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

Abstract: Thus, the present disclosure provides a method of programming a memory array. At least one memory cell including a magnetic element is provided. At least one current source coupled to the magnetic element is provided. A unipolar current is supplied from the at least one current source to the magnetic element at a plurality of non-zero current levels.

Abstract translation: 因此，本公开提供了一种对存储器阵列进行编程的方法。 提供包括磁性元件的至少一个存储单元。 提供耦合到磁性元件的至少一个电流源。 单极电流从多个非零电流电平从至少一个电流源提供给磁性元件。

公开(公告)号：US07466585B2

公开(公告)日：2008-12-16

申请号：US11380777

申请日：2006-04-28

Applicant: Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

Inventor： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

IPC: G11C11/14

CPC classification number: G11C11/16 ,  G11C29/50 ,  G11C2029/5002

Abstract: An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

Abstract translation: 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。

公开(公告)号：US20080230531A1

公开(公告)日：2008-09-25

申请号：US11845626

申请日：2007-08-27

Applicant: CHIH-MING CHOU ,  Yu-Jen Wang ,  Chao-Yung Wang ,  Yu-Ping Lin ,  Chen-Ping Su

Inventor： CHIH-MING CHOU ,  Yu-Jen Wang ,  Chao-Yung Wang ,  Yu-Ping Lin ,  Chen-Ping Su

IPC: H05B3/20

CPC classification number: H05B3/22 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/7825 ,  H01L2224/78703 ,  H01L2224/78744 ,  H01L2224/85 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H05K9/0067 ,  H01L2924/00014

Abstract: A heat block for holding an electronic device is disclosed. The heat block comprises a base and at least one discharge device. The discharge device is disposed on the base. The discharge device is electrically conductive and is grounded. When the electronic device is placed on the base, the discharge device is in contact with an electrical contact of the electronic device.

Abstract translation: 公开了一种用于保持电子设备的热块。 加热块包括底座和至少一个排出装置。 放电装置设置在基座上。 放电装置导电并接地。 当电子装置放置在基座上时，放电装置与电子装置的电接点相接触。

公开(公告)号：US07312506B2

公开(公告)日：2007-12-25

申请号：US11093652

申请日：2005-03-30

Applicant: Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

Inventor： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

IPC: H01L29/82

CPC classification number: G11C11/16

Abstract: A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

Abstract translation: 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。