利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

42 条记录 (耗时 0.032 秒)

    Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device
    12.
    发明授权
    Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device 有权
    在硅衬底上形成二氧化硅膜的方法，半导体衬底上形成氧化膜的方法以及半导体器件的制造方法

    公开(公告)号：US07157383B2

    公开(公告)日：2007-01-02

    申请号：US10515501

    申请日：2003-05-21

    申请人： Hikaru Kobayashi

    发明人： Hikaru Kobayashi

    IPC分类号： H01L21/469 ,  H01L21/44 ,  H01L21/28 ,  H01L21/4763

    CPC分类号： H01L21/28194 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28202 ,  H01L21/31662 ,  H01L29/511 ,  H01L29/518

    摘要： After cleaning a surface of a silicon substrate (1), impurities and natural oxide film existing on the silicon substrate (1) are removed by soaking the silicon substrate (1) in a 0.5%-by-volume HF aqueous solution for 5 minutes. The silicon substrate (1) is rinsed (cleaned) with ultrapure water for five minutes. Then, the silicon substrate (1) is soaked for 30 minutes in azeotropic nitric acid heated to an azeotropic temperature of 120.7° C. In this way, an extremely thin chemical oxide film (5) is formed on the surface of the silicon substrate (1). Subsequently, a metal film (6) (aluminum-silicon alloy film) is deposited, followed by heating in a hydrogen-containing gas at 200° C. for 20 minutes. Through the heat processing in the hydrogen-containing gas, hydrogen reacts with interface states and defect states in the chemical oxide film (5), causing disappearance of the interface states and defect states. As a result, the quality of the film can be improved. Thus, it is possible to form a high quality (with low leak current density), extremely thin silicon dioxide film on the silicon substrate at a low temperature with excellent film-thickness controllability.

    摘要翻译： 在清洗硅衬底（1）的表面之后，通过将硅衬底（1）浸泡在0.5％体积的HF水溶液中5分钟来除去存在于硅衬底（1）上的杂质和自然氧化物膜。 将硅衬底（1）用超纯水冲洗（清洁）5分钟。 然后，将硅基板（1）在加热至共沸温度为120.7℃的共沸硝酸中浸泡30分钟。以这种方式，在硅基板的表面上形成极薄的化学氧化物膜（5） 1）。 随后，沉积金属膜（6）（铝 - 硅合金膜），然后在含氢气体中在200℃下加热20分钟。 通过含氢气体中的热处理，氢与化学氧化膜（5）中的界面态和缺陷状态发生反应，导致界面状态和缺陷状态的消失。 结果，可以提高胶片的质量。 因此，可以在低温下在硅衬底上形成高质量（低漏电流密度），极薄的二氧化硅膜，具有优异的膜厚可控性。

    Printer and roll-shaped printing medium therefor
    13.
    发明授权
    Printer and roll-shaped printing medium therefor 失效
    打印机和滚动式打印介质

    公开(公告)号：US06739777B2

    公开(公告)日：2004-05-25

    申请号：US10315542

    申请日：2002-12-10

    申请人： Hikaru Kobayashi ,  Masahiro Uehara

    发明人： Hikaru Kobayashi ,  Masahiro Uehara

    IPC分类号： B41J1126

    CPC分类号： B41J11/706 ,  B26D3/085 ,  B26D5/02 ,  B26D9/00 ,  B41J11/666 ,  B41J15/042

    摘要： A printer that uses a roll-shaped printing medium comprising a printing surface on which images are printed, a releasably adhered printing portion, and a release portion holding the adhered printing portion includes a conveying device conveying the printing medium while pulling out the printing medium by a predetermined amount every time an image is to be printed; a printing member printing an image with respect to the printing medium conveyed by the conveying device; a half-cutting unit cutting off the printing portion of the printing medium except for the release portion, along the conveying direction of the image printed by the printing member, at the interval corresponding to the dimension of the image in the width direction perpendicular to the conveying direction; and a cutting unit cutting the printing medium along the width direction, at the positions corresponding to the dimension of the aforementioned image in the conveying direction.

    摘要翻译： 一种打印机，其使用包括印刷图像的印刷表面，可剥离粘合的印刷部分和保持粘合的印刷部分的释放部分的辊状印刷介质，所述打印机包括传送打印介质的输送装置，同时通过 每次打印图像时预定量; 打印部件，其相对于由所述输送装置输送的所述打印介质打印图像; 半切割单元沿着与打印部件打印的图像的传送方向相对应于与垂直于打印部件的宽度方向的图像的尺寸相对应的间隔切除除了剥离部分之外的打印介质的打印部分 输送方向 以及切割单元，在与传送方向上的上述图像的尺寸相对应的位置沿着宽度方向切割打印介质。

    Method of trapping ion in silicon oxide film or silicon oxy-nitride film
    14.
    发明授权
    Method of trapping ion in silicon oxide film or silicon oxy-nitride film 失效
    在氧化硅膜或氮氧化硅膜中捕获离子的方法

    公开(公告)号：US5100519A

    公开(公告)日：1992-03-31

    申请号：US622531

    申请日：1990-12-05

    申请人： Hiroshi Tsubomura ,  Hikaru Kobayashi

    发明人： Hiroshi Tsubomura ,  Hikaru Kobayashi

    IPC分类号： H01L31/04 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/318

    CPC分类号： H01L21/0214 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/3105 ,  H01L21/31675

    摘要： In a method of trapping ions in a silicon oxide film or a silicon oxy-nitride film, silicon or silicon nitride as an electrode is first immersed in a nonaqueous solvent containing an electrolyte. Then, a voltage is applied between the electrode and a counter electrode so as to oxidize the surface of the silicon or silicon nitride to form a silicon oxide film or a silicon oxy-nitride film. At the same time, the ions contained in the electrolyte are caused to permeate into the silicon oxide film or the silicon oxy-nitride film and trapped therein. The method is thus capable of trapping ions in a silicon oxide film or a silicon oxy-nitride film for a short time without using any evaporation apparatus and of shifting the flat band potential of the silicon.

    摘要翻译： 在氧化硅膜或氮氧化硅膜中捕获离子的方法中，首先将作为电极的硅或氮化硅浸渍在含有电解质的非水溶剂中。 然后，在电极和对电极之间施加电压以氧化硅或氮化硅的表面，以形成氧化硅膜或氮氧化硅膜。 同时，使包含在电解质中的离子渗透到氧化硅膜或氮氧化硅膜中并被捕获。 因此，该方法能够短时间地捕获氧化硅膜或氮氧化硅膜中的离子，而不使用任何蒸发装置并移动硅的平带电位。

    SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SAME
    15.
    发明申请
    SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130005107A1

    公开(公告)日：2013-01-03

    申请号：US13634784

    申请日：2011-03-02

    申请人： Shigeki Imai ,  Takafumi Shimatani ,  Hikaru Kobayashi

    发明人： Shigeki Imai ,  Takafumi Shimatani ,  Hikaru Kobayashi

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78636 ,  H01L21/02068 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02664 ,  H01L21/02672 ,  H01L21/32105 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618

    摘要： Disclosed is a thin-film transistor (10) manufacturing method that includes a process for forming a nitrate film (12x) that includes residual nickel (22) on a surface thereof, by bringing a nitric acid solution into contact with a polysilicon layer (11x); and a process for removing the nitrate film (12x) that includes residual nickel (22) from the polysilicon layer (11x) surface. With this surface treatment process, a polysilicon layer (11) with reduced concentration of a surface residual nickel (22) is provided, and a thin-film transistor (10) having excellent surface smoothness is attained.

    摘要翻译： 公开了一种薄膜晶体管（10）制造方法，其包括通过使硝酸溶液与多晶硅层（11x）接触来形成包含残留镍（22）在其表面上的硝酸盐膜（12x）的工艺 ）; 以及从多晶硅层（11x）表面除去包括残留镍（22）的硝酸盐膜（12x）的方法。 通过该表面处理工艺，提供了表面残留镍（22）的浓度降低的多晶硅层（11），并且获得了具有优异表面平滑度的薄膜晶体管（10）。

    METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICES, SEMICONDUCTOR DEVICE AND TRANSFER MEMBER
    16.
    发明申请
    METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICES, SEMICONDUCTOR DEVICE AND TRANSFER MEMBER 有权
    用于制造半导体器件，半导体器件和传输器件的方法和器件

    公开(公告)号：US20120326255A1

    公开(公告)日：2012-12-27

    申请号：US13578967

    申请日：2011-02-14

    申请人： Hikaru Kobayashi

    发明人： Hikaru Kobayashi

    IPC分类号： H01L31/0352 ,  B32B5/02 ,  H01L21/00

    CPC分类号： H01L31/0747 ,  H01L31/02363 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T29/41 ,  Y10T442/10

    摘要： Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a process liquid (19) that oxidizes and dissolves a target substrate (20) to be treated is supplied to the surface of said substrate (20) to be treated; a positioning step in which a mesh-like transferring member (10b) provided with a catalyst material is positioned near or in contact with the surface of the substrate (20) to be treated; and a concave or convex forming step in which a concave or convex is formed on the surface of the substrate (20) to be treated via the aforementioned supply and positioning steps. As opposed to existing manufacturing methods, which manufacture semiconductor devices provided with semiconductor substrates with highly arbitrary (i.e. not very reproducible) concaves or convexes, by forming an appropriate concave or convex or mesh at the transferring member step, the disclosed method can stably manufacture semiconductor devices provided with semiconductor substrates that have concaves or convexes of a fixed level.

    摘要翻译： 公开了半导体器件的制造方法。 所述方法包括：供给步骤，其中将待处理的目标基板（20）氧化和溶解的处理液体（19）供给到待处理的所述基板（20）的表面; 定位步骤，其中设置有催化剂材料的网状转印构件（10b）位于待处理的基板（20）的表面附近或与之接触; 以及通过上述供给和定位步骤在待处理的基板（20）的表面上形成凹或凸的凹凸形成步骤。 与现有制造方法相反，所述制造方法通过在转印构件步骤形成适当的凹或凸或网状物来制造具有高度任意（即不是非常可再现的）凹凸的半导体衬底的半导体器件，所公开的方法可以稳定地制造半导体 设置有具有固定水平的凹陷或凸起的半导体衬底的器件。

    Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device
    17.
    发明申请
    Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device 有权
    在硅衬底上形成二氧化硅膜的方法，半导体衬底上形成氧化膜的方法以及半导体器件的制造方法

    公开(公告)号：US20050215070A1

    公开(公告)日：2005-09-29

    申请号：US10515501

    申请日：2003-05-21

    申请人： Hikaru Kobayashi

    发明人： Hikaru Kobayashi

    IPC分类号： H01L27/04 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L21/822 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L21/469

    CPC分类号： H01L21/28194 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28202 ,  H01L21/31662 ,  H01L29/511 ,  H01L29/518

    摘要： After cleaning a surface of a silicon substrate (1), impurities and natural oxide film existing on the silicon substrate (1) are removed by soaking the silicon substrate (1) in a 0.5%-by-volume HF aqueous solution for 5 minutes. The silicon substrate (1) is rinsed (cleaned) with ultrapure water for five minutes. Then, the silicon substrate (1) is soaked for 30 minutes in azeotropic nitric acid heated to an azeotropic temperature of 120.7° C. In this way, an extremely thin chemical oxide film (5) is formed on the surface of the silicon substrate (1). Subsequently, a metal film (6) (aluminum-silicon alloy film) is deposited, followed by heating in a hydrogen-containing gas at 200° C. for 20 minutes. Through the heat processing in the hydrogen-containing gas, hydrogen reacts with interface states and defect states in the chemical oxide film (5), causing disappearance of the interface states and defect states. As a result, the quality of the film can be improved. Thus, it is possible to form a high quality (with low leak current density), extremely thin silicon dioxide film on the silicon substrate at a low temperature with excellent film-thickness controllability.

    摘要翻译： 在清洗硅衬底（1）的表面之后，通过将硅衬底（1）浸泡在0.5％体积的HF水溶液中5分钟来除去存在于硅衬底（1）上的杂质和自然氧化物膜。 将硅衬底（1）用超纯水冲洗（清洁）5分钟。 然后，将硅基板（1）在加热至共沸温度为120.7℃的共沸硝酸中浸泡30分钟。以这种方式，在硅基板的表面上形成极薄的化学氧化物膜（5） 1）。 随后，沉积金属膜（6）（铝 - 硅合金膜），然后在含氢气体中在200℃下加热20分钟。 通过含氢气体中的热处理，氢与化学氧化膜（5）中的界面态和缺陷状态发生反应，导致界面状态和缺陷状态的消失。 结果，可以提高胶片的质量。 因此，可以在低温下在硅衬底上形成高质量（低漏电流密度），极薄的二氧化硅膜，具有优异的膜厚可控性。

    SOLID PREPARATION, METHOD FOR PRODUCING SOLID PREPARATION, AND METHOD FOR GENERATING HYDROGEN
    18.
    发明申请
    SOLID PREPARATION, METHOD FOR PRODUCING SOLID PREPARATION, AND METHOD FOR GENERATING HYDROGEN 审中-公开

    公开(公告)号：US20200067554A1

    公开(公告)日：2020-02-27

    申请号：US16667477

    申请日：2019-10-29

    申请人： Hikaru Kobayashi ,  KIT Co. Ltd. ,  NISSHIN KASEI CO., LTD.

    发明人： Hikaru Kobayashi ,  Yuki Kobayashi

    IPC分类号： H04B1/3827 ,  G06F1/16 ,  H01Q1/24 ,  H01Q1/27 ,  H04B1/38 ,  H01Q1/22 ,  G04R60/06 ,  H04B5/00

    摘要： One solid preparation of the present invention mainly includes silicon fine particles, and has a capability of generating hydrogen. In addition, one specific example of the solid preparation mainly includes silicon fine particles having a crystallite diameter principally of 1 nm or more and 100 nm or less, and exhibits a capability of generating hydrogen in an amount of 3 ml/g or more when brought into contact with a water-containing liquid having a pH value of 7 or more. In this solid preparation, hydrogen is generated when the silicon fine particles are brought into contact with a water-containing liquid having a pH value of 7 or more. Therefore, taking advantage of the characteristics of the solid preparation, generation of hydrogen is promoted in, for example, a gastrointestinal tract where the pH value is 7 or more due to secretion of pancreatic fluid after passage through the stomach after oral ingestion.