摘要:
Various embodiments disclosed herein relate to a circuit for connecting a transceiver input/output to an antenna, the circuit including one or more of the following: a transceiver port; an antenna port; a reception path disposed between the transceiver port and the antenna port; a first amplifier configured to amplify a signal on the reception path when the circuit is configured according to a normal operation mode; and a first hybrid coupler configured to establish a bypass path around the first amplifier when the circuit is configured according to a bypass operation mode.
摘要:
A method and apparatus for transmitting and receiving data are disclosed. The method for transmitting data, comprising encapsulating one or multiple media access control protocol data units (MPDU) as a group media access control protocol data unit (G-MPDU) based on a length of the group media access control protocol data unit G-MPDU; fragmenting a current MPDU according to a residual length to obtain a fragmented MPDU when the residual length is insufficient to encapsulate the current MPDU; encapsulating the fragmented MPDU to the G-MPDU; and transmitting the encapsulated G-MPDU. The method ensures a high data transmission rate and does not wasting excess time to execute the fragmentation processing. The method also ensures a high resource utilization rate, utilizing fully the remaining length of the data unit.
摘要:
In accordance with the present invention, novel superparamagnetic magneto-dielectric polymer nanocomposites are synthesized using a novel process. The tunability of the dielectric/magnetic properties demonstrated by this novel highly-viscous solvent-free polymer nanocomposite that is amenable to building 3D electromagnetic structures/devices by using processes such as 3D printing, compression molding or injection molding, when an external DC magnetic field is applied, exceeds what has been previously reported for magneto-dielectric polymer nanocomposite materials.
摘要:
Disclosed in the present invention is a method for data transmission. The method comprises the following steps: receiving coded bit streams; mapping said coded bit streams to every spatial stream. A device for implementing stream mapping, a device for implementing rate matching and a transmitter are also disclosed in the present invention. With the method and device in the present invention, compared with the current stream mapping method, the mapping is more uniform with higher gain in high order modulation and multi-streams circumstance in a closed-loop model. And the system performance of a radio communication system could be further improved.
摘要:
The invention provides a method of efficiently producing branched, cyclic glycerol-based polyols with a co-product as anti-biodegrading agent from inexpensive readily available glycerol monomer. The method involves polymerizing glycerol or glycerol with at least another monomer to multiple other monomers in the presence of particular amount of a strong base as the catalyst under a particular distillation environment. The polyol produced by the inventive method is beneficial of reducing scales in Bayer liquid for aluminum production process and improving brightness of coated paper substrates without greening effect.
摘要:
A method for rendering a microfluidic device suitable for reuse for nucleic acid analysis is provided. The method may include flowing a nucleic acid inactivating solution into a microfluidic channel of the device by pumping; and then flowing a wash solution into the channel by pumping, thereby displacing the nucleic acid inactivating solution from the channel, whereby any residual nucleic acid from a prior use of the device is inactivated.
摘要:
In one embodiment, devices, such as metal-insulator-metal tunneling diodes, are fabricated by forming a cavity in a substrate having a top surface, conformally depositing a thin film of material in the cavity so as to form a thin layer of material on walls of the cavity, and depositing a layer of material to fill the cavity, wherein a top edge of the thin film is exposed and is flush with the top surface of the substrate.
摘要:
A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor comprises: a semiconductor substrate; a channel region formed in the semiconductor substrate, with one or more isolation structures formed in the channel region; a first buried layer and a second buried layer formed in the semiconductor substrate and located at both sides of the channel region respectively, the first buried layer being first type non-heavily-doped, and the second buried layer being second type non-heavily-doped; a source region and a drain region formed in the semiconductor substrate and located on the first buried layer and the second buried layer respectively; and a gate dielectric layer formed on the one or more isolation structures, and a gate formed on the gate dielectric layer.
摘要:
Disclosed is a process for preparing isopimaric acid, comprising the following steps: First step: dissolving thermally isomerized rosin in acetone, adding in drops a solution of isobutanolamine in acetone to form a precipitate, standing, filtering, washing with ethanol, and drying to obtain crude ammonium salt of isopimaric acid; recrystallizing the crude ammonium salt of isopimaric acid according to multi-recrystallization, and drying to obtain purified crystal of ammonium salt of isopimaric acid; Second step: dissolving the purified crystal of ammonium salt of isopimaric acid obtained in the first step in ether, adding hydrochloric acid in portions until the crystal of ammonium salt of isopimaric acid disappears, removing a water layer and washing the ether layer with water to neutral, evaporating the ether, dissolving the residue in acetone, adding water slowly into the solution dropwise until crystals cease to grow, then filtering and drying to obtain purified isopimaric acid.
摘要:
A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer, a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region; and a SiN stress cap layer covering the gate stack to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.