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11.发明申请公开(公告)号：US20110281221A1
公开(公告)日：2011-11-17
申请号：US13189143
申请日：2011-07-22
申请人： Zhiyun Chen , Erin F. Fleet , Gregory D. Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Gregory D. Cooper
CPC分类号： G03F7/2041 , B82Y30/00 , G03F1/62 , G03F7/004 , G03F7/091 , G03F7/2002
摘要： Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
摘要翻译： 半导体纳米尺寸颗粒具有独特的光学性质，使其成为UV光刻技术中各种应用的理想选择。 在该专利中，描述了包括在浸没式光刻中使用半导体纳米尺寸颗粒或含半导体纳米尺寸颗粒的材料作为高折射介质的几种这样的应用，作为光学中的抗反射涂层，光刻中的防护薄膜和在UV光致抗蚀剂中的敏化剂 。
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公开(公告)号：US20090081594A1
公开(公告)日：2009-03-26
申请号：US10792377
申请日：2004-03-04
申请人： Zhiyun Chen , Erin F. Fleet , Gregory Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Gregory Cooper
CPC分类号： G03F7/2041 , B82Y30/00 , G03F1/62 , G03F7/004 , G03F7/091 , G03F7/2002
摘要： Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
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公开(公告)号：US08666249B2
公开(公告)日：2014-03-04
申请号：US13098005
申请日：2011-04-29
申请人： Huiyu Zhou , Teng Ma , Kun Huang , Zhiyun Chen
发明人： Huiyu Zhou , Teng Ma , Kun Huang , Zhiyun Chen
IPC分类号： H04J14/00
CPC分类号： H04B10/27 , H04B10/272 , H04B10/29 , H04J3/1694
摘要： A method, device and system for implementing a long reach passive optical network (LR-PON) are provided, which solve the problem that the cost for establishing an LR-PON system is high. The method includes: receiving an uplink burst packet transmitted by an optical network unit (ONU) in a burst manner (101), converting a burst optical signal of the uplink burst packet into a continuous optical signal, and transmitting the continuous optical signal to a receiving device (105). The present invention is applicable to an LR-PON.
摘要翻译： 提供了实现长距离无源光网络（LR-PON）的方法，设备和系统，解决了建立LR-PON系统的成本高的问题。 该方法包括：以突发方式（101）接收由光网络单元（ONU）发送的上行链路突发分组，将上行链路突发分组的突发光信号转换为连续光信号，并将连续光信号发送到 接收设备（105）。 本发明可应用于LR-PON。
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公开(公告)号：US08383316B2
公开(公告)日：2013-02-26
申请号：US11774171
申请日：2007-07-06
CPC分类号： G03F7/20 , G03F7/0043 , G03F7/0047 , G03F7/2002 , G03F7/2022 , G03F7/2041 , G03F7/2053 , Y10T428/24479 , Y10T428/31504
摘要： New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
摘要翻译： 本公开描述了涉及使用两步技术提供用于光刻的非线性抗蚀剂的多步可逆光化学反应的新途径。 它们可以根据光的强度二次提供曝光。 还描述了几个具体实例，包括但不限于使用纳米晶体。 结合双重图案化，这些方法可能产生亚衍射极限特征密度。
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15.发明申请REVERSIBLE PHOTO BLEACHABLE MATERIALS BASED ON NANO SIZED SEMICONDUCTOR PARTICLES AND THEIR OPTICAL APPLICATIONS 审中-公开基于纳米尺寸半导体颗粒和其光学应用的可逆照相漂白材料公开(公告)号：US20090220756A1
公开(公告)日：2009-09-03
申请号：US12404472
申请日：2009-03-16
申请人： Zhiyun Chen , Erin F. Fleet , Serpil Gonen , Gregory D. Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Serpil Gonen , Gregory D. Cooper
CPC分类号： G03F7/70383 , B82Y20/00 , G02F1/0126 , G02F1/015 , G02F1/01716 , G02F2202/36 , G02F2203/12 , G03F7/70291 , Y10S430/146 , Y10S977/932 , Y10T428/24802 , Y10T428/24893
摘要： Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.
摘要翻译： 由于其特定的物理特性，半导体纳米颗粒可用作从远红外线到深紫外线的广泛光可逆漂白材料。 应用包括光学光刻中的可逆对比度增强层（R-CEL），光刻掩模检查和写入以及光学存储技术。
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公开(公告)号：US07524616B2
公开(公告)日：2009-04-28
申请号：US10792377
申请日：2004-03-04
申请人： Zhiyun Chen , Erin F. Fleet , Gregory Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Gregory Cooper
CPC分类号： G03F7/2041 , B82Y30/00 , G03F1/62 , G03F7/004 , G03F7/091 , G03F7/2002
摘要： Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
摘要翻译： 半导体纳米尺寸颗粒具有独特的光学性质，使其成为UV光刻技术中各种应用的理想选择。 在该专利中，描述了包括在浸没式光刻中使用半导体纳米尺寸颗粒或含半导体纳米尺寸颗粒的材料作为高折射介质的几种这样的应用，作为光学中的抗反射涂层，光刻中的防护薄膜和UV光致抗蚀剂中的敏化剂 。
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公开(公告)号：US08824498B2
公开(公告)日：2014-09-02
申请号：US13468807
申请日：2012-05-10
申请人： Zhiyun Chen , Xing Hu , Min Yan , Jianlin Zhou , Yang Cao , Kun Li
发明人： Zhiyun Chen , Xing Hu , Min Yan , Jianlin Zhou , Yang Cao , Kun Li
CPC分类号： H04J3/1617 , H04J3/1694 , H04J2203/0067 , H04Q11/0067 , H04Q2011/0064 , H04Q2011/0092
摘要： A method and an apparatus for transmitting multiple services are provided, and which belong to the field of optical transmission technologies. The method includes: receiving bandwidth information of TCONTs of all nodes; dividing a payload area of a GTH frame into a preset number n of arrays, where each array includes a specified number of timeslots and the interval between any two neighboring timeslots in each array is n and n is a natural number; calculating, according to the bandwidth information of the TCONTs of all the nodes, timeslot positions of arrays occupied by the TCONTs of each node in the payload area; interleaving, according to the timeslot positions of the arrays occupied by the TCONTs of a local node in the payload area, the TCONTs of the local node into corresponding timeslots starting from a specified frame, obtaining a GTH frame, and transmitting the GTH frame.
摘要翻译： 提供了一种用于发送多个业务的方法和装置，属于光传输技术领域。 该方法包括：接收所有节点TCONT的带宽信息; 将GTH帧的有效负载区域划分为预定数量n的阵列，其中每个阵列包括指定数量的时隙，并且每个阵列中任何两个相邻时隙之间的间隔为n，n为自然数; 根据所有节点的TCONT的带宽信息，计算有效负载区域中每个节点的TCONT所占据的阵列的时隙位置; 根据有效载荷区域中的本地节点的TCONT占据的阵列的时隙位置，将本地节点的TCONT切换到从指定帧开始的相应时隙，获得GTH帧并发送GTH帧。
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18.发明申请公开(公告)号：US20090239161A1
公开(公告)日：2009-09-24
申请号：US12415013
申请日：2009-03-31
申请人： Zhiyun Chen , Erin F. Fleet , Gregory Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Gregory Cooper
IPC分类号： G03F1/00
CPC分类号： G03F7/2041 , B82Y30/00 , G03F1/62 , G03F7/004 , G03F7/091 , G03F7/2002
摘要： Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
摘要翻译： 半导体纳米尺寸颗粒具有独特的光学性质，使其成为UV光刻技术中各种应用的理想选择。 在该专利中，描述了包括在浸没式光刻中使用半导体纳米尺寸颗粒或含半导体纳米尺寸颗粒的材料作为高折射介质的几种这样的应用，作为光学中的抗反射涂层，光刻中的防护薄膜和UV光致抗蚀剂中的敏化剂 。
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19.发明授权Reversible photobleachable materials based on nano-sized semiconductor particles and their optical applications 失效基于纳米尺寸半导体颗粒的可逆光可漂白材料及其光学应用公开(公告)号：US07510818B2
公开(公告)日：2009-03-31
申请号：US10730382
申请日：2003-12-09
申请人： Zhiyun Chen , Erin F. Fleet , Serpil Gönen , Gregory D. Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Serpil Gönen , Gregory D. Cooper
IPC分类号： G03C5/56
CPC分类号： G03F7/70383 , B82Y20/00 , G02F1/0126 , G02F1/015 , G02F1/01716 , G02F2202/36 , G02F2203/12 , G03F7/70291 , Y10S430/146 , Y10S977/932 , Y10T428/24802 , Y10T428/24893
摘要： Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.
摘要翻译： 由于其特定的物理特性，半导体纳米颗粒可用作从远红外线到深紫外线的广泛光可逆漂白材料。 应用包括光学光刻中的可逆对比度增强层（R-CEL），光刻掩模检查和写入以及光学存储技术。
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公开(公告)号：US09601971B2
公开(公告)日：2017-03-21
申请号：US14009384
申请日：2012-03-20
申请人： Marcus Banda , Zhiyun Chen , Olaf Michelsson
发明人： Marcus Banda , Zhiyun Chen , Olaf Michelsson
CPC分类号： H02K9/04 , H02K3/24 , H02K5/20 , H02K15/00 , Y10T29/49009
摘要： A cooling device for cooling an air-permeable winding braid of an electrical machine is provided. The cooling device includes a baffle and a fan, which is arranged for blowing a stream of cooling air substantially perpendicularly onto a first surface portion of one side of the wind braid, wherein, in the region of a second surface portion of the side of the winding braid, arranged alongside the first surface portion, the baffle is arranged substantially parallel to and that a distance from the surface of the second surface portion such that a partial stream of the stream of cooling air is formed in the channel that is formed by the baffle and the second surface portion, and so, on the side of the winding braid that is opposite from the first-mentioned side, the other partial stream of the stream of cooling air, penetrating the winding braid, flows away from the winding braid without any return flow.
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