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    Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications
    11.
    发明授权
    Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications 失效
    将二氧化锗和/或GeO2与二氧化硅的合金用于半导体电介质应用

    公开(公告)号：US07189639B2

    公开(公告)日：2007-03-13

    申请号：US11055141

    申请日：2005-02-10

    申请人： Padmanabhan Krishnaraj ,  Michael S. Cox ,  Bruno Geoffrion ,  Srinivas D. Nemani

    发明人： Padmanabhan Krishnaraj ,  Michael S. Cox ,  Bruno Geoffrion ,  Srinivas D. Nemani

    IPC分类号： H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/76837 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/76224

    摘要： A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.

    摘要翻译： 公开了一种用于在具有多个间隙的衬底上沉积电介质膜的方法，所述间隙形成在设置在高密度等离子体衬底处理室衬底中的相邻凸起表面之间。 在一个实施方案中，该方法包括将包含锗源，硅源和氧化剂的工艺气体流入衬底处理室; 形成具有来自工艺气体的同时沉积和溅射组分的高密度等离子体，以沉积包含硅，锗和氧的电介质膜; 并且在形成高密度等离子体的步骤期间，将基板处理室内的压力保持在小于100mTorr，同时允许电介质膜被加热到其玻璃化转变温度以上。

    Gas distribution system for improved transient phase deposition
    12.
    发明授权
    Gas distribution system for improved transient phase deposition 有权
    用于改善瞬态相沉积的气体分配系统

    公开(公告)号：US07722737B2

    公开(公告)日：2010-05-25

    申请号：US11123453

    申请日：2005-05-04

    申请人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad M. Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana E. Gujer, legal representative

    发明人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad M. Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer

    IPC分类号： H01L21/326 ,  C23C16/505

    CPC分类号： C23C16/4558

    摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

    摘要翻译： 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。

    Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications
    13.
    发明申请
    Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications 失效
    将二氧化锗和/或GeO2与二氧化硅的合金用于半导体电介质应用

    公开(公告)号：US20060178003A1

    公开(公告)日：2006-08-10

    申请号：US11055141

    申请日：2005-02-10

    申请人： Padmanabhan Krishnaraj ,  Michael Cox ,  Bruno Geoffrion ,  Srinivas Nemani

    发明人： Padmanabhan Krishnaraj ,  Michael Cox ,  Bruno Geoffrion ,  Srinivas Nemani

    IPC分类号： H01L21/4763 ,  H01L21/31

    CPC分类号： H01L21/76837 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/76224

    摘要： A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.

    摘要翻译： 公开了一种用于在具有多个间隙的衬底上沉积电介质膜的方法，所述间隙形成在设置在高密度等离子体衬底处理室衬底中的相邻凸起表面之间。 在一个实施方案中，该方法包括将包含锗源，硅源和氧化剂的工艺气体流入衬底处理室; 形成具有来自工艺气体的同时沉积和溅射组分的高密度等离子体，以沉积包含硅，锗和氧的电介质膜; 并且在形成高密度等离子体的步骤期间，将基板处理室内的压力保持在小于100mTorr，同时允许电介质膜被加热到其玻璃化转变温度以上。