公开(公告)号：US11462380B2

公开(公告)日：2022-10-04

申请号：US17266792

申请日：2019-07-03

Applicant: ASML NETHERLANDS B. V.

Inventor： Pieter Willem Herman De Jager

IPC: H01J37/153 ,  H01J37/10 ,  H01J37/147 ,  H01J37/20 ,  H01J37/28

Abstract: Systems, methods, and programming are described for inspecting a substrate having a pattern imaged thereon, including obtaining a plurality of selected target locations on the substrate, the selected target locations dependent on characteristics of the pattern, scanning the substrate with a plurality of electron beamlets, wherein the scanning includes individually addressing the beamlets to impinge on the selected target locations independently, detecting a reflected or a transmitted portion of the beamlets, and generating images of the selected target locations.

公开(公告)号：US11175592B2

公开(公告)日：2021-11-16

申请号：US16656094

申请日：2019-10-17

Applicant: ASML Netherlands B. V.

Inventor： Elie Badr ,  Shawn Shakahwat Millat ,  Giacomo Miceli ,  Alok Verma

IPC: G03F7/20

Abstract: A method for determining an overlay metric is disclosed including obtaining angle resolved distribution spectrum data relating to a measurement of a target structure including a symmetrical component. An overlay dependent contour of a feature of the target structure is determined from the angle resolved distribution spectrum data, from which an overlay metric is determined. The method includes exposing an exposed feature onto a masked layer including a mask which defines masked and unmasked areas of the layer, such that a first portion of the exposed feature is exposed on a masked area of the layer and a second portion of the exposed feature is exposed on a non-masked area of the layer, the size of the first portion with respect to the second portion being overlay dependent; and performing an etch step to define an etched feature, the etched feature corresponding to the second portion of the exposed feature.

公开(公告)号：US11137690B2

公开(公告)日：2021-10-05

申请号：US16649699

申请日：2018-10-05

Applicant: ASML NETHERLANDS B. V.

Inventor： Duan-Fu Stephen Hsu

IPC: G03B27/54 ,  G03F7/20 ,  G03F1/24

Abstract: A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

公开(公告)号：US20150346113A1

公开(公告)日：2015-12-03

申请号：US14825765

申请日：2015-08-13

Applicant: ASML Netherlands B. V.

Inventor： Marcus Adrianus Van De Kerkhof ,  Maurits Van Der Schaar ,  Hendrik Jan Hidde Smilde

IPC: G01N21/95 ,  G01N21/47 ,  G02B5/18 ,  G03F7/20

CPC classification number: G01N21/9501 ,  G01N21/4738 ,  G01N2201/06113 ,  G01N2201/10 ,  G02B5/1823 ,  G02B5/1861 ,  G03F7/70058 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/70 ,  G03F9/7046 ,  G03F9/7076 ,  H01L23/544 ,  H01L2924/0002 ,  Y10T428/24612 ,  H01L2924/00

Abstract: A second set of superimposed gratings are superposed over a first set of superimposed gratings. The second set of gratings have a different periodicity from the first set of gratings or a different orientation. Consequently the first order diffraction pattern from the second set of superimposed gratings can be distinguished from the first order diffraction pattern from the first set of superimposed gratings.

Abstract translation: 第二组叠加的光栅叠加在第一组叠加的光栅上。 第二组光栅具有与第一组光栅不同的周期性或不同的取向。 因此，来自第二组叠加光栅的一阶衍射图可以与来自第一组叠加光栅的一阶衍射图案区分开。

公开(公告)号：US20120140197A1

公开(公告)日：2012-06-07

申请号：US13372093

申请日：2012-02-13

Applicant: Levinus Pieter BAKKER

Inventor： Levinus Pieter BAKKER

IPC: G03B27/54 ,  G02B5/18

CPC classification number: G03F7/70958 ,  G03F7/70575 ,  G03F7/70983

Abstract: An optical element includes a surface including a tilted profile having height differences, thereby providing cavities and elevations having a predetermined maximum height difference, and a transmissive layer that covers the cavities and the elevations of the optical element. A first height of the transmissive layer in the cavities is substantially equal or larger than the predetermined maximum height difference and the transmissive layer has a second height on the elevations and the second height is about 10-500 nm. The transmissive layer is enabled to optically filter incident radiation, and the optical element is a grating.

Abstract translation: 光学元件包括包括具有高度差的倾斜轮廓的表面，从而提供具有预定最大高度差的空腔和高度，以及覆盖光学元件的腔和高度的透射层。 空腔中的透射层的第一高度基本上等于或大于预定的最大高度差，并且透射层在高度上具有第二高度，第二高度为约10-500nm。 透射层能够光学滤除入射的辐射，并且光学元件是光栅。

公开(公告)号：US20110102757A1

公开(公告)日：2011-05-05

申请号：US12897355

申请日：2010-10-04

Applicant: Hans BUTLER ,  Remco Jochem Sebastiaan Groenendijk

Inventor： Hans BUTLER ,  Remco Jochem Sebastiaan Groenendijk

IPC: G03B27/54 ,  G03F7/20

CPC classification number: G03F9/7026 ,  G03F7/70525

Abstract: A method is disclosed. A change in position of a substrate in a direction substantially parallel to a direction of propagation of a radiation beam that is, or is to be, projected on to that substrate is determined, which change in position would result in a lithographic error in the application of a pattern to that substrate using that radiation beam. The change in position of the substrate is used to control a property of the radiation beam when, or as, the radiation beam is projected onto the substrate in order to reduce the lithographic error.

Abstract translation: 公开了一种方法。 确定基板在基本上平行于正在投射到该基板上的辐射束的传播方向的方向上的位置的变化，哪个位置的变化将导致应用中的光刻误差 使用该辐射束的该衬底的图案。 当辐射束投射到基板上时，或者作为辐射束投射到基板上以便减小光刻误差，衬底的位置变化用于控制辐射束的性质。

公开(公告)号：US20070296943A1

公开(公告)日：2007-12-27

申请号：US11471728

申请日：2006-06-21

Applicant: Uwe Mickan ,  Antonius Johannes Josephus Van Dijsseldonk

Inventor： Uwe Mickan ,  Antonius Johannes Josephus Van Dijsseldonk

IPC: G03B27/54

CPC classification number: G03F7/702 ,  G03F7/70175 ,  G03F7/70583

Abstract: An optical apparatus is disclosed that has a convex mirror and a concave mirror with an aperture, wherein, in use, radiation from a radiation emitter passes through the aperture and is incident upon the convex mirror before being incident upon the concave mirror, the optical apparatus arranged to form the radiation into a radiation beam, wherein the concave mirror is translatable towards and away from the convex mirror or the convex mirror is translatable towards and away from the concave mirror, to adjust divergence of the radiation beam.

Abstract translation: 公开了一种光学装置，其具有凸面镜和具有孔径的凹面镜，其中在使用中，来自辐射发射器的辐射通过该孔并在入射到凹面镜之前入射到凸面镜上，光学装置 布置成将辐射形成为辐射束，其中所述凹面镜可朝向和远离所述凸面反射镜平移，或者所述凸面镜可朝向和远离所述凹面镜面平移，以调节所述辐射束的发散度。

公开(公告)号：US20040130694A1

公开(公告)日：2004-07-08

申请号：US10686813

申请日：2003-10-17

Applicant: ASML Netherlands B. V.

Inventor： Ralph Kurt ,  Levinus Pieter Bakker ,  Frank Jeroen Pieter Schuurmans

IPC: G03B027/72 ,  G03B027/42

CPC classification number: G03F7/70983 ,  G03F7/702 ,  G03F7/70233

Abstract: A lithographic projection apparatus is provided wherein an object situated in a pulsed beam of radiation has an electrode in its vicinity and a voltage source connected either to the electrode or to the object. This configuration can provide a negative voltage pulse to the object relative to the electrode. The beam of radiation and the voltage pulse from the voltage source are provided in phase or out of phase. In this way, the object is shielded against secondary electrons generated by radiation beam illumination.

Abstract translation: 提供了一种光刻投影装置，其中位于脉冲辐射束中的物体在其附近具有电极，并且电压源连接到电极或物体。 该配置可以相对于电极向对象提供负电压脉冲。 辐射束和来自电压源的电压脉冲以相位或相位提供。 以这种方式，物体被遮蔽以防止由辐射束照射产生的二次电子。

公开(公告)号：US20040105082A1

公开(公告)日：2004-06-03

申请号：US10664065

申请日：2003-09-17

Applicant: ASML Netherlands B. V.

Inventor： Konstantin Nikolaevitch Koshelev ,  Vadim Yevgenyevich Banine ,  Vladimir Vital?apos;Evitch Ivanov ,  Erik Rene Kieft ,  Erik Roelof Loopstra ,  Lucas Henricus Johannes Stevens ,  Yurii Victorovitch Sidelkov ,  Vsevolod Grigorevitch Koloshnikov ,  Vladimir Mihailovitch Krivtsun ,  Robert Rafilevitch Gayazov ,  Olav Waldemar Vladimir Frijns

IPC: G03B027/42

CPC classification number: H05G2/003 ,  B82Y10/00 ,  F28D15/0266 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70916 ,  H05G2/005

Abstract: A radiation source comprises an anode and a cathode that are configured and arranged to create a discharge in a gas or vapor in a space between anode and cathode and to form a plasma pinch so as to generate electromagnetic radiation. The gas or vapor may comprise xenon, indium, lithium and/or tin. The radiation source may comprise a plurality of discharge elements, each of which is only used for short intervals, after which another discharge element is selected. The radiation source may also comprise a triggering device, which device can facilitate improving the exact timing of the pinch formation and thus the pulse of EUV radiation. The radiation source may also be constructed to have a low inductance, and operated in a self-triggering regime.

Abstract translation: 辐射源包括阳极和阴极，其被构造和布置成在阳极和阴极之间的空间中的气体或蒸气中产生放电并且形成等离子体夹点以产生电磁辐射。 气体或蒸汽可以包括氙，铟，锂和/或锡。 辐射源可以包括多个放电元件，每个放电元件仅用于短间隔，之后选择另一个放电元件。 辐射源还可以包括触发装置，该装置可以有助于改善夹紧形成的精确定时并因此改善EUV辐射的脉冲。 辐射源也可以被构造为具有低电感，并以自触发方式操作。

公开(公告)号：US20230297757A1

公开(公告)日：2023-09-21

申请号：US18018261

申请日：2021-08-26

Applicant: ASML NETHERLANDS B. V.

Inventor： Syam PARAYIL VENUGOPALAN ,  Mohammad Reza KAMALI ,  MIchael KUBIS

IPC: G06F30/398 ,  H01J37/32

CPC classification number: G06F30/398 ,  H01J37/32926 ,  H01J2237/334

Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.