公开(公告)号：US07851248B2

公开(公告)日：2010-12-14

申请号：US12305150

申请日：2007-08-21

Applicant: Silvia Kronmueller ,  Tino Fuchs ,  Ando Feyh ,  Christina Leinenbach ,  Marco Lammer

Inventor： Silvia Kronmueller ,  Tino Fuchs ,  Ando Feyh ,  Christina Leinenbach ,  Marco Lammer

IPC: H01L21/00

CPC classification number: B81C1/00333 ,  B81C2201/0115 ,  B81C2201/0132 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: A capping technology is provided in which, despite the fact that structures which are surrounded by a silicon-germanium filling layer are exposed using ClF3 etching through micropores in the silicon cap, an etching attack on the silicon cap is prevented, namely, either by particularly selective (approximately 10,000:1 or higher) adjustment of the etching process itself, or by using the finding that the oxide of a germanium-rich layer, in contrast to oxidized porous silicon, is not stable but instead may be easily dissolved, to protect the silicon cap.

Abstract translation: 提供了一种封盖技术，尽管事实上，利用ClF3蚀刻通过硅盖中的微孔暴露由硅 - 锗填充层包围的结构，但是防止了对硅帽的蚀刻攻击，即特别地 选择性（大约10,000:1或更高）调整蚀刻工艺本身，或通过使用与氧化多孔硅相反的富锗层的氧化物不稳定但可以容易地溶解的发现来保护 硅帽。

公开(公告)号：US20090261387A1

公开(公告)日：2009-10-22

申请号：US12314547

申请日：2008-12-12

Applicant: Antalne Adam ,  Istvan Barsony ,  Csaba Ducso ,  Magdolna Eros ,  Tibor Mohacsy ,  Karolyne Payer ,  Eva Vazsonyi

Inventor： Antalne Adam ,  Istvan Barsony ,  Csaba Ducso ,  Magdolna Eros ,  Tibor Mohacsy ,  Karolyne Payer ,  Eva Vazsonyi

IPC: H01L29/84 ,  H01L21/56

CPC classification number: B81C1/00246 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2201/0115 ,  B81C2203/0714 ,  B81C2203/0742 ,  G01L5/228 ,  G06F3/0414 ,  Y10T29/42

Abstract: The invention relates to a process for fabricating a monocrystalline Si-micromechanical element integrated with a CMOS circuit element within the CMOS technology, wherein a domain of second conducting property is formed within a substrate of first conducting property, here the second conducting property is reverse with respect to the first conducting property, then simultaneously with or immediately after this a domain of monocrystalline Si is formed within the substrate for fabricating a micromechanical element. After this, a CMOS circuit element is fabricated within the substrate through the known steps of CMOS technology and then the circuit element, as well as a portion of said domain for fabricating the micromechanical element that will carry the micromechanical element after its fabrication are covered with a protecting layer. Then by starting a front-side isotropic porous Si-etching from the exposed surface of said domain for fabricating the micromechanical element and by continuing the etching until said portion that will carry the micromechanical element after its fabrication becomes at least in its full extent underetched, a porous Si sacrificial layer is created which at least partially encloses said portion that will carry the micromechanical element after its fabrication. As a next step, the exposed surface of said porous Si sacrificial layer is passivated by applying a metallic thin film thereon and metallic contact pieces of the circuit element through the known steps of CMOS technology are formed. Finally, the metallic thin film that covers the exposed surface of the porous Si sacrificial layer is removed and the micromechanical element is formed by chemically dissolving said porous Si sacrificial layer.

Abstract translation: 本发明涉及一种在CMOS技术中制造与CMOS电路元件集成的单晶Si-微机械元件的方法，其中在第一导电性质的衬底内形成第二导电性质的畴，这里第二导电性能与 相对于第一导电性质，然后在该单晶硅的一个或多个之后，形成用于制造微机械元件的基板内。 之后，通过CMOS技术的已知步骤，在衬底内制造CMOS电路元件，然后电路元件以及用于制造将在其制造之后承载微机电元件的微机械元件的一部分用于覆盖微机电元件 保护层。 然后通过从用于制造微机电元件的所述畴的暴露表面开始前侧各向同性多孔Si蚀刻，并且通过继续蚀刻直到在其制造之后将携带微机电元件的部分至少在其全部程度上不被蚀刻， 产生多孔Si牺牲层，其至少部分地包围将在其制造之后承载微机械元件的所述部分。 作为下一步骤，通过在其上施加金属薄膜来钝化所述多孔Si牺牲层的暴露表面，并通过CMOS技术的已知步骤形成电路元件的金属接触片。 最后，去除覆盖多孔Si牺牲层的暴露表面的金属薄膜，并通过化学溶解所述多孔Si牺牲层形成微机械元件。

公开(公告)号：US20090256219A1

公开(公告)日：2009-10-15

申请号：US12490762

申请日：2009-06-24

Applicant: Hubert BENZEL ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert BENZEL ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: H01L29/84

CPC classification number: B81C1/00182 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115

Abstract: A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces.

Abstract translation: 微机械振动膜传感器的制造方法包括提供具有至少部分地位于隔膜下方的第一区域，隔膜和空腔的半导体基板。 在第一区域的至少一部分上方，在半导体衬底的表面中或表面上产生第二区域，第二区域的至少一部分被设置为十字形。 隔膜由沉积的密封层形成，并且包括至少一部分挡条。

公开(公告)号：US20090200262A1

公开(公告)日：2009-08-13

申请号：US12227509

申请日：2007-04-27

Applicant: Dick Scholten ,  Julia Cassemeyer ,  Michael Stumber ,  Franz Laermer ,  Ando Feyh ,  Christian Maeurer

Inventor： Dick Scholten ,  Julia Cassemeyer ,  Michael Stumber ,  Franz Laermer ,  Ando Feyh ,  Christian Maeurer

IPC: C23F1/00

CPC classification number: B81C1/00119 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0038 ,  A61M2037/0046 ,  A61M2037/0053 ,  B81C2201/0112 ,  B81C2201/0115

Abstract: A method for producing porous microneedles (10) situated in an array on a silicon substrate includes: providing a silicon substrate, applying a first etching mask, patterning microneedles using a DRIE process (“deep reactive ion etching”), removing the first etching mask, at least partially porosifying the Si substrate, the porosification beginning on the front side of the Si substrate and a porous reservoir being formed.

Abstract translation: 一种位于硅衬底阵列上的多孔微针（10）的制造方法，包括：提供硅衬底，施加第一蚀刻掩模，使用DRIE工艺（“深反应离子蚀刻”）图案化微针，除去第一蚀刻掩模 至少部分地使Si衬底开孔，从Si衬底的正面开始的孔隙化和形成的多孔容器。

公开(公告)号：US20080218843A1

公开(公告)日：2008-09-11

申请号：US12119712

申请日：2008-05-13

Applicant: Teruo Sasagawa ,  Lior Kogut

Inventor： Teruo Sasagawa ,  Lior Kogut

IPC: G02B26/00

CPC classification number: B81B3/001 ,  B81B2201/047 ,  B81C2201/0115 ,  G02B26/001

Abstract: A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator that includes a transparent electrode having a first surface; and a movable reflective electrode with a second surface facing the first surface. The movable reflective electrode is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer which has a porous surface. The porous surface, in the actuated position, decreases contact area between the electrodes, thus reducing stiction.

公开(公告)号：US07419581B2

公开(公告)日：2008-09-02

申请号：US10474968

申请日：2002-03-05

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: B81B1/00 ,  H01L31/028 ,  H01L31/18

CPC classification number: B81B3/0083 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178 ,  C25F3/12 ,  C25F3/14 ,  H01L21/306 ,  H01L21/3081

Abstract: A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity in a silicon substrate are able to be implemented.For this purpose, first at least a specified region (5, 6) of the silicon substrate (1) is etched porous. Thereafter, the specified porous region (5, 6) of the silicon substrate (1) is oxidized.

Abstract translation: 提出了在硅衬底（1）中制造光学透明区域（5,6）的简单和成本有效的可能性，其中通过在硅衬底的空腔上使用任何厚度和光学透明区域的两个光学透明区域 能够实施。 为此目的，首先对硅衬底（1）的至少一个特定区域（5,6）进行多孔蚀刻。 此后，硅衬底（1）的规定的多孔区域（5,6）被氧化。

公开(公告)号：US07417784B2

公开(公告)日：2008-08-26

申请号：US11407470

申请日：2006-04-19

Applicant: Teruo Sasagawa ,  Lior Kogut

Inventor： Teruo Sasagawa ,  Lior Kogut

IPC: G02B26/00

CPC classification number: B81B3/001 ,  B81B2201/047 ,  B81C2201/0115 ,  G02B26/001

Abstract: A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator that includes a transparent electrode having a first surface; and a movable reflective electrode with a second surface facing the first surface. The movable reflective electrode is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer which has a porous surface. The porous surface, in the actuated position, decreases contact area between the electrodes, thus reducing stiction.

Abstract translation: 公开了一种利用多孔电极表面降低静摩擦力的微机电装置（MEMS）。 在一个实施例中，微机电装置是干涉式调制器，其包括具有第一表面的透明电极; 以及具有面向第一表面的第二表面的可移动反射电极。 可移动反射电极可在松弛和致动（折叠）位置之间移动。 在第一或第二表面上提供铝层。 然后将铝层阳极氧化以提供具有多孔表面的氧化铝层。 处于致动位置的多孔表面减小了电极之间的接触面积，从而减小了静电。

公开(公告)号：US07404332B2

公开(公告)日：2008-07-29

申请号：US10529420

申请日：2003-03-06

Applicant: Gerhard Lammel ,  Simon Armbruster ,  Frank Schaefer ,  Hubert Benzel

Inventor： Gerhard Lammel ,  Simon Armbruster ,  Frank Schaefer ,  Hubert Benzel

IPC: G01L7/00

CPC classification number: B81B7/0038 ,  B81C2201/0115

Abstract: A micromechanical component and a method for producing a micromechanical component are proposed, a hollow space and a region of porous silicon being provided, the region of porous silicon being provided for lowering the pressure prevailing in the hollow space.

Abstract translation: 提出了一种微机械部件和微机械部件的制造方法，提供了中空空间和多孔硅的区域，提供了多孔硅的区域，用于降低中空空间中的压力。

公开(公告)号：US20080030825A1

公开(公告)日：2008-02-07

申请号：US11869467

申请日：2007-10-09

Applicant: Teruo Sasagawa ,  Lior Kogut

Inventor： Teruo Sasagawa ,  Lior Kogut

IPC: G02F1/21

CPC classification number: B81B3/001 ,  B81B2201/047 ,  B81C2201/0115 ,  G02B26/001

Abstract: A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator that includes a transparent electrode having a first surface; and a movable reflective electrode with a second surface facing the first surface. The movable reflective electrode is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer which has a porous surface. The porous surface, in the actuated position, decreases contact area between the electrodes, thus reducing stiction.

Abstract translation: 公开了一种利用多孔电极表面降低静摩擦力的微机电装置（MEMS）。 在一个实施例中，微机电装置是干涉式调制器，其包括具有第一表面的透明电极; 以及具有面向第一表面的第二表面的可移动反射电极。 可移动反射电极可在松弛和致动（折叠）位置之间移动。 在第一或第二表面上提供铝层。 然后将铝层阳极氧化以提供具有多孔表面的氧化铝层。 处于致动位置的多孔表面减小了电极之间的接触面积，从而减小了静电。

公开(公告)号：US20070007241A1

公开(公告)日：2007-01-11

申请号：US11407988

申请日：2006-04-20

Applicant: Lisa DeLouise

Inventor： Lisa DeLouise

IPC: B31D3/00 ,  C09K13/00 ,  B44C1/22 ,  H01L21/461

CPC classification number: G01N33/54373 ,  B81B2201/0214 ,  B81C1/00626 ,  B81C2201/0115 ,  Y10T428/24273

Abstract: Etchant solutions for making porous semiconductor materials. Also disclosed are methods of making porous semiconductor materials, post etch treatments, and porous semiconductor materials produced by these methods.

Abstract translation: 用于制造多孔半导体材料的蚀刻剂解决方案。 还公开了制造多孔半导体材料，后蚀刻处理和通过这些方法生产的多孔半导体材料的方法。