公开(公告)号：US20100052112A1

公开(公告)日：2010-03-04

申请号：US12418071

申请日：2009-04-03

Applicant: John A. ROGERS ,  Tae Ho KIM ,  Won Mook CHOI ,  Dae Hyeong KIM ,  Matthew MEITL ,  Etienne MENARD ,  John CARLISLE

Inventor： John A. ROGERS ,  Tae Ho KIM ,  Won Mook CHOI ,  Dae Hyeong KIM ,  Matthew MEITL ,  Etienne MENARD ,  John CARLISLE

IPC: H01L29/06 ,  H01L21/20 ,  B05D5/12

CPC classification number: H01L21/20 ,  B81B7/0093 ,  B81C1/0038 ,  B81C2201/0191 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Various heat-sinked components and methods of making heat-sinked components are disclosed where diamond in thermal contact with one or more heat-generating components are capable of dissipating heat, thereby providing thermally-regulated components. Thermally conductive diamond is provided in patterns capable of providing efficient and maximum heat transfer away from components that may be susceptible to damage by elevated temperatures. The devices and methods are used to cool flexible electronics, integrated circuits and other complex electronics that tend to generate significant heat. Also provided are methods of making printable diamond patterns that can be used in a range of devices and device components.

Abstract translation: 公开了各种散热部件和制造散热部件的方法，其中与一个或多个发热部件热接触的金刚石能够散热，从而提供热调节部件。 导热金刚石以能够提供有效和最大的热传递的图案提供，远离可能易受高温损坏的部件。 这些器件和方法用于冷却易于产生显着热量的柔性电子器件，集成电路和其他复杂电子器件。 还提供了制造可在一系列装置和装置部件中使用的可印刷金刚石图案的方法。

公开(公告)号：US20080190888A1

公开(公告)日：2008-08-14

申请号：US11911787

申请日：2006-05-05

Applicant: Ahn Heejoon ,  Ralph Nuzzo ,  Anne Shim

Inventor： Ahn Heejoon ,  Ralph Nuzzo ,  Anne Shim

IPC: B44C1/22

CPC classification number: G03F7/0002 ,  B41M1/34 ,  B41M3/003 ,  B81C1/0038 ,  B81C2201/019 ,  B81C2201/0191 ,  B82Y10/00 ,  B82Y40/00

Abstract: The present invention provides a method of sub-micron decal transfer lithography. The method includes forming a first pattern in a surface of a first silicon-containing elastomer, bonding at least a portion of the first pattern to a substrate, and etching a portion of at least one of the first silicon-containing elastomer and the substrate.

Abstract translation: 本发明提供了亚微米贴花转移光刻方法。 该方法包括在第一含硅弹性体的表面上形成第一图案，将第一图案的至少一部分结合到基底，以及蚀刻第一含硅弹性体和基底中的至少一个的一部分。

公开(公告)号：US20080157406A1

公开(公告)日：2008-07-03

申请号：US12003408

申请日：2007-12-26

Applicant: Jiunn Chen ,  Meng-Jen Wang

Inventor： Jiunn Chen ,  Meng-Jen Wang

IPC: H01L23/544 ,  H01L21/30

CPC classification number: H01L21/50 ,  B81C1/00269 ,  B81C2201/0191 ,  H01L21/6835 ,  H01L23/10 ,  H01L23/544 ,  H01L2221/68359 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/00

Abstract: A recyclable stamp device and a recyclable stamp process for wafer bond are provided. The recyclable stamp device includes a substrate, a protective layer, a stack film structure and a cap. The protective layer is disposed on the substrate. An opening is positioned at the substrate and the protective layer to expose the substrate. The stack film structure includes an adhesion layer, a stress control layer and a wafer bond alignment mark layer. The adhesion layer is disposed on the protective layer and the exposed substrate. The stress control layer is disposed on the adhesion layer. The wafer bond alignment mark layer is disposed on the stress control layer. The wafer bond alignment mark layer includes an alignment mark at a side of the opening. The cap has a capping portion disposed on the wafer bond alignment mark layer corresponding to the opening.

Abstract translation: 提供了一种用于晶片接合的可循环印模装置和可循环印模工艺。 可回收印章装置包括基板，保护层，叠层膜结构和盖。 保护层设置在基板上。 开口位于衬底和保护层上以露出衬底。 叠层膜结构包括粘合层，应力控制层和晶片接合对准标记层。 粘合层设置在保护层和暴露的基底上。 应力控制层设置在粘合层上。 晶片接合对准标记层设置在应力控制层上。 晶片接合对准标记层包括在开口侧的对准标记。 盖具有设置在与开口对应的晶片接合对准标记层上的封盖部分。

公开(公告)号：US07348258B2

公开(公告)日：2008-03-25

申请号：US10913701

申请日：2004-08-06

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供了扩张切割前沿以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US07335527B2

公开(公告)日：2008-02-26

申请号：US11231103

申请日：2005-09-20

Applicant: William D. Sawyer ,  Jeffrey T. Borenstein

Inventor： William D. Sawyer ,  Jeffrey T. Borenstein

IPC: H01L21/00 ,  B81C1/00

CPC classification number: B81C1/00182 ,  B81C1/00579 ,  B81C3/001 ,  B81C2201/0191

Abstract: The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer. The method includes providing an SOI wafer that has (i) a handle layer, (ii) a dielectric layer, and (iii) a device layer, wherein a mesa etch has been made on the device layer of the SOI wafer, providing a substrate, wherein a pattern has been etched onto the substrate, bonding the SOI wafer and the substrate together, removing the handle layer of the SOI wafer, removing the dielectric layer of the SOI wafer, then performing a structural etch on the device layer of the SOI wafer to define the device.

Abstract translation: 本发明提供了使用绝缘体上硅（SOI）晶片生产微电子机械系统（MEMS）和相关器件的一般制造方法。 该方法包括提供SOI晶片，其具有（i）手柄层，（ii）电介质层和（iii）器件层，其中在SOI晶片的器件层上进行台面蚀刻，提供衬底 其中图案已被蚀刻到衬底上，将SOI晶片和衬底接合在一起，去除SOI晶片的手柄层，去除SOI晶片的电介质层，然后对SOI的器件层进行结构蚀刻 晶圆来定义设备。

公开(公告)号：US07208021B1

公开(公告)日：2007-04-24

申请号：US11058308

申请日：2005-02-14

Applicant: Lasha Vardosanidze ,  Zaza Taliashvili ,  Avto Tavkhelidze ,  Rodney Thomas Cox

Inventor： Lasha Vardosanidze ,  Zaza Taliashvili ,  Avto Tavkhelidze ,  Rodney Thomas Cox

IPC: H01L21/00

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C1/00484 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10T29/413 ,  Y10T29/49128 ,  Y10T29/49147

Abstract: In one aspect, the present invention provides a method for fabricating two layers separated by a gap comprising the steps of: (a) providing a first material; (b) treating the first material to reduce the number of available bonding centers; (c) placing a second material over the first material and allowing bonds to form between the two materials to form a composite; and (d) separating the composite so formed along the boundary of the two materials. In a further aspect, subsequent layers of material may be introduced to the composite by repeating steps (b) and (c) under conditions where adhesion between the subsequent layers is greater, smaller or substantially the same as the adhesion between the first and second material.

Abstract translation: 一方面，本发明提供一种用于制造由间隙分开的两层的方法，包括以下步骤：（a）提供第一材料; （b）处理第一材料以减少可用结合中心的数量; （c）将第二材料放置在第一材料上并允许在两种材料之间形成粘结以形成复合材料; 和（d）沿着两种材料的边界分离形成的复合材料。 在另一方面，随后的材料层可以在条件下通过重复步骤（b）和（c）而被引入到复合材料中，其中后续层之间的粘合力比第一和第二材料之间的粘合力更大，或更小或基本相同 。

公开(公告)号：US20070072331A1

公开(公告)日：2007-03-29

申请号：US11238855

申请日：2005-09-29

Applicant: Dan Chilcott

Inventor： Dan Chilcott

IPC: H01L21/00

CPC classification number: B81C1/00666 ,  B81B2203/0127 ,  B81C1/00246 ,  B81C2201/0191 ,  B81C2203/0728

Abstract: A technique for manufacturing a micro-electro-mechanical (MEM) device includes a number of steps. Initially, a first wafer is provided. Next, a bonding layer is formed on a first surface of the first wafer. Then, a portion of the bonding layer is removed to provide a cavity including a plurality of spaced support pedestals within the cavity. Next, a second wafer is bonded to at least a portion of the bonding layer. A portion of the second wafer provides a diaphragm over the cavity and the support pedestals support the diaphragm during processing. The second wafer is then etched to release the diaphragm from the support pedestals.

Abstract translation: 微机电（MEM）装置的制造技术包括多个步骤。 首先，提供第一晶片。 接下来，在第一晶片的第一表面上形成接合层。 然后，去除接合层的一部分以提供在空腔内包括多个间隔开的支撑基座的空腔。 接下来，将第二晶片接合到粘合层的至少一部分。 第二晶片的一部分在空腔上提供隔膜，并且支撑基座在处理期间支撑隔膜。 然后蚀刻第二晶片以从支撑基座释放隔膜。

公开(公告)号：US07009270B2

公开(公告)日：2006-03-07

申请号：US10755007

申请日：2004-01-08

Applicant: Fabrice Letertre ,  Bruno Ghyselen ,  Oliver Rayssac

Inventor： Fabrice Letertre ,  Bruno Ghyselen ,  Oliver Rayssac

IPC: H01L29/00

CPC classification number: H01L21/187 ,  B81C1/00365 ,  B81C2201/0191 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76254

Abstract: A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

Abstract translation: 一种应力吸收微结构组件，包括具有在表面上雕刻或蚀刻的多个图案的容纳层的支撑衬底，缓冲层和成核层。 应力吸收微结构组件还可以包括缓冲层和成核层之间的绝缘层。 该组件可以在其上接收厚的外延层，同时引起这种层的破裂。

公开(公告)号：US06975009B2

公开(公告)日：2005-12-13

申请号：US10853848

申请日：2004-05-25

Applicant: Randall L. Kubena ,  David T. Chang

Inventor： Randall L. Kubena ,  David T. Chang

IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5656 ,  G01P15/08 ,  H01L29/82

CPC classification number: B81C1/0015 ,  B81B2201/0242 ,  B81C2201/014 ,  B81C2201/0191 ,  B81C2203/036 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894

Abstract: A MEM tunneling gyroscope assembly includes (1) a beam structure, and a mating structure defined on a first substrate or wafer; and (2) at least one contact structure, and a mating structure defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer; and (3) a bonding layer is disposed on at least one of said mating structures for bonding the mating structure defined on the first substrate or wafer to the mating structure on the second substrate or wafer.

Abstract translation: MEM隧道陀螺仪组件包括（1）梁结构和限定在第一衬底或晶片上的配合结构; 以及（2）至少一个接触结构以及限定在第二衬底或晶片上的配合结构，所述第二衬底或晶片上的所述配合结构与所述第一衬底或晶片上的配合结构互补形状; 和（3）粘合层设置在至少一个所述配合结构上，用于将限定在第一衬底或晶片上的配合结构接合到第二衬底或晶片上的配合结构。

公开(公告)号：US06841838B2

公开(公告)日：2005-01-11

申请号：US10223874

申请日：2002-08-19

Applicant: Randall L. Kubena ,  David T. Chang

Inventor： Randall L. Kubena ,  David T. Chang

IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5656 ,  G01P15/08 ,  H01L29/82

CPC classification number: B81C1/0015 ,  B81B2201/0242 ,  B81C2201/014 ,  B81C2201/0191 ,  B81C2203/036 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894

Abstract: A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and at least one contact structure, second portions of the side drive electrodes and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer and the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and also between the first and second portions of the side drive electrodes to cause a bond to occur therebetween. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.

Abstract translation: 制造微机电陀螺仪的方法。 悬臂梁结构，侧驱动电极的第一部分和配合结构限定在第一基板或晶片上; 并且至少一个接触结构，侧驱动电极的第二部分和配合结构限定在第二衬底或晶片上，第二衬底或晶片上的配合结构与第一衬底上的配合结构互补形状，或 并且所述侧驱动电极的第一和第二部分彼此互补形状。 在至少一个配合结构和侧驱动电极的一个或第一和第二部分中提供粘结层，优选共晶粘结层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力，使得在接合或共晶层处的两个配合结构之间以及侧驱动电极的第一和第二部分之间发生接合，从而在它们之间发生接合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。 键优选为共晶键。