HOTSPOT AWARE DOSE CORRECTION
    14.
    发明申请

    公开(公告)号:US20180259858A1

    公开(公告)日:2018-09-13

    申请号:US15534391

    申请日:2015-12-11

    IPC分类号: G03F7/20

    摘要: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: obtaining a relationship of a characteristic of one or more features in the portion with respect to dose; obtaining a value of the characteristic; and obtaining a target dose based on the value of the characteristic and the relationship.

    Estimating a gain relationship of an optical source

    公开(公告)号:US10036963B2

    公开(公告)日:2018-07-31

    申请号:US15262452

    申请日:2016-09-12

    申请人: Cymer, LLC

    发明人: Tanuj Aggarwal

    IPC分类号: G03B27/54 G03F7/20

    摘要: An indication of an output of an optical source of a photolithography system is accessed; an indication of an input provided to the optical source is accessed, the provided input being associated with the accessed indication of the output of the optical source; an output error is determined from an expected amount of output and the accessed indication of the output of the optical source; a local gain associated with the accessed indication of the input provided to the optical source is estimated; a gain error is determined from the estimated local gain and an expected local gain; a current value of one or more operating metrics of the optical source is estimated based on one or more of the output error and the gain error; and a gain relationship for the optical source is updated based on the estimated current value of the one or more operating metrics.

    Method of determining dose, inspection apparatus, patterning device, substrate and device manufacturing method

    公开(公告)号:US09952517B2

    公开(公告)日:2018-04-24

    申请号:US14753642

    申请日:2015-06-29

    IPC分类号: G03B27/72 G03F7/20 G01N21/47

    摘要: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate, the method comprising the steps: (a) receiving a substrate comprising first and second structures produced using the lithographic process; (b) detecting scattered radiation while illuminating the first structure with radiation to obtain a first scatterometer signal; (c) detecting scattered radiation while illuminating the second structure with radiation to obtain a second scatterometer signal; (d) using the first and second scatterometer signals to determine an exposure dose value used to produce said first and second structures wherein the first structure has a first periodic characteristic with spatial characteristics and yet at least another second periodic characteristic with spatial characteristics designed to be affected by the exposure dose and the second structure has a first periodic characteristic with spatial characteristics and yet at least another second periodic characteristic with spatial characteristics designed to be affected by the exposure dose wherein the exposure dose affects the exposure dose affected spatial characteristics of the first and second structures in a different manner.