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105 条记录 (耗时 0.016 秒)

    Forming luminescent silicon material and electro-luminescent device containing that material
    11.
    发明授权
    Forming luminescent silicon material and electro-luminescent device containing that material 失效
    形成发光硅材料和含有该材料的电致发光器件

    公开(公告)号：US5852346A

    公开(公告)日：1998-12-22

    申请号：US929251

    申请日：1997-09-15

    申请人： Takuya Komoda ,  Peter Layton Francis Hemment

    发明人： Takuya Komoda ,  Peter Layton Francis Hemment

    IPC分类号： C23C14/14 ,  C23C14/48 ,  C23C14/58 ,  H01L33/34 ,  H01L21/265

    CPC分类号： C23C14/14 ,  C23C14/48 ,  C23C14/58 ,  C23C14/5806 ,  C23C14/584 ,  H01L33/343 ,  H01L33/346

    摘要： A process is provided for forming a silicon material which exhibits room temperature photoluminescence and/or electroluminescence. It comprises the steps of implanting silicon ions into a silicon oxide (SiO.sub.2) substrate and subsequently annealing the substrate at an elevated temperature for a period such as to bring about Si nanocrystal formation, the nanocrystals being dispersed through the SiO.sub.2 substrate. Photoluminescence of visible light from the resulting substrate is induced on irradiation of the substrate with e.g. ultraviolet light, and the substrate can also be incorporated into an electroluminescent device. The process is characterised by the features of implanting silicon ions at a dose from 1.times.10.sup.17 /cm.sup.2 to less than that required to produce saturation and by the use of an implantation energy of 100 keV or more. The resulting silicon nanocrystals dispersed through the SiO.sub.2 substrate have an average particle size of about 30 .ANG..

    摘要翻译： 提供一种形成表现出室温光致发光和/或电致发光的硅材料的方法。 它包括以下步骤：将硅离子注入到氧化硅（SiO 2）衬底中，随后在升高的温度下退火衬底一段时间以产生Si纳米晶体形成，纳米晶体通过SiO 2衬底分散。 来自所得底物的可见光的光致发光在基板的照射下被诱导。 紫外光，并且基板也可以结合到电致发光器件中。 该方法的特征在于以1×10 17 / cm 2的剂量将硅离子注入到小于产生饱和所需的硅离子，并且通过使用100keV以上的注入能量。 通过SiO 2衬底分散的所得硅纳米晶体的平均粒度为约30。

    Immersion scanning system for fabricating porous silicon films
    14.
    发明授权
    Immersion scanning system for fabricating porous silicon films 失效
    用于制造多孔硅膜的浸渍扫描系统

    公开(公告)号：US5501787A

    公开(公告)日：1996-03-26

    申请号：US395936

    申请日：1995-02-27

    申请人： Ernest Bassous ,  Jean-Marc Halbout ,  Subramanian S. Iyer ,  Vijay P. Kesan

    发明人： Ernest Bassous ,  Jean-Marc Halbout ,  Subramanian S. Iyer ,  Vijay P. Kesan

    IPC分类号： H01L21/3063 ,  H01L21/306 ,  H01L33/00 ,  H01L33/34 ,  C25D7/12 ,  C25D11/32

    CPC分类号： H01L33/346 ,  H01L21/306 ,  H01L33/0054

    摘要： A system for making porous silicon on blank and patterned Si substrates by "immersion scanning", particularly suitable for fabricating light-emitting Si devices and utilizing an open electrolytic cell having a cathode and an opposing anode consisting of a Si substrate on which the porous silicon is to be formed, both disposed, with their opposing surfaces in parallel, in an aqueous HF solution electrolyte contained in the cell. The substrate anode is mounted to be movable relative to the electrolyte so as to be mechanically cycled or scanned in and out of the electrolyte at a programmable rate during anodization. The uniformity, thickness and porosity of the resulting anodized layer on the substrate are determined by the scanning speed, number of cycles, current density, and HF-based electrolyte parameters of the system, and the Si substrate resistivity, conductivity type, and crystal orientation. The light-emitting silicon devices produced incorporate porous silicon layers and are operable at room temperature.

    摘要翻译： 一种用于通过“浸没扫描”在空白和图案化的Si衬底上制造多孔硅的系统，特别适用于制造发光的Si器件，并利用具有由Si衬底组成的阴极和相对阳极的开放电解池，多孔硅 将被形成为两者彼此相对的平面布置在包含在电池中的HF水溶液电解液中。 基板阳极安装成相对于电解质可移动，以便在阳极氧化期间以可编程的速率机械地循环或扫描电解质中和从电解液中扫出。 基板上得到的阳极氧化层的均匀度，厚度和孔隙率由系统的扫描速度，循环次数，电流密度和HF基电解质参数以及Si衬底电阻率，导电类型和晶体取向 。 所制造的发光硅器件包括多孔硅层，并且可在室温下操作。

    Device for detection of organic solvents by silicon photoluminescence
    15.
    发明授权
    Device for detection of organic solvents by silicon photoluminescence 失效
    通过硅光致发光检测有机溶剂的装置

    公开(公告)号：US5453624A

    公开(公告)日：1995-09-26

    申请号：US267425

    申请日：1994-06-28

    申请人： Michael J. Sailor ,  Vincent V. Doan

    发明人： Michael J. Sailor ,  Vincent V. Doan

    IPC分类号： G01N21/64 ,  H01L21/306 ,  H01L33/34 ,  F21V33/00 ,  G01J1/58

    CPC分类号： H01L33/346 ,  G01N21/6489 ,  H01L21/306 ,  G01N2021/6432

    摘要： An n-type silicon (Si) wafer is galvanostatically etched in a hydrofluoric acid (HF)-containing solution while being illuminated with a 300 watt tungsten light source to form porous silicon with luminescent properties. Photoluminescence of the porous silicon is monitored using a short wavelength visible or ultraviolet light source and a monochromator/CCD detector assembly. Upon exposure to organic solvents, the photoluminescence is quenched. Within seconds of removal of the solvent, the original intensity is recovered and further exposure of the porous silicon to organic solvents will again result in quenching of the luminescence.

    摘要翻译： 在用氢钨酸（HF）的溶液中恒电蚀刻n型硅（Si）晶片，同时用300瓦的钨光源照射以形成具有发光性质的多孔硅。 使用短波长可见光或紫外光源和单色仪/ CCD检测器组件监测多孔硅的光致发光。 暴露于有机溶剂后，光致发光被淬灭。 在除去溶剂的几秒钟内，回收原来的强度，并且多孔硅进一步暴露于有机溶剂将再次导致发光骤冷。

    Photolithographic fabrication of luminescent images on porous silicon structures
    17.
    发明授权
    Photolithographic fabrication of luminescent images on porous silicon structures 失效
    多孔硅结构上的发光图像的光刻制造

    公开(公告)号：US5318676A

    公开(公告)日：1994-06-07

    申请号：US901752

    申请日：1992-06-22

    申请人： Michael J. Sailor ,  Vincent V. Doan

    发明人： Michael J. Sailor ,  Vincent V. Doan

    IPC分类号： C25F3/12 ,  H01L33/34

    CPC分类号： H01L33/346 ,  C25F3/12

    摘要： A polished wafer of single-crystal silicon (Si) is ohmically contacted on its backside to a copper wire to provide a working electrode. The wafer and a counterelectrode are immersed in a solution of aqueous HF and ethanol within an optical quality cuvette. Lithographic images are projected onto the silicon wafer within the solution, and the wafer is etched galvanostatically at a low current density until a predetermined charge density is attained. The areas of an n-type silicon wafer exposed to the light during the etch will exhibit visible luminescence when the wafer is illuminated with an ultraviolet (UV) lamp or other short wavelength visible light. The areas of the wafer that were not exposed to the pattern during etch will not luminesce.

    摘要翻译： 单晶硅（Si）的抛光晶片在其背面与铜线欧姆接触，以提供工作电极。 将晶片和反电极浸入光学质量比色皿中的HF和乙醇水溶液中。 将平版印刷图像投影到溶液中的硅晶片上，并且以低电流密度恒定地蚀刻晶片，直到达到预定的电荷密度。 当用紫外（UV）灯或其他短波长可见光照射晶片时，在蚀刻期间暴露于光的n型硅晶片的面积将呈现可见的发光。 在蚀刻期间未暴露于图案的晶片的区域将不会发光。