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    RESONANT FILTER BASED ON AN N/MEMS MATRIX
    12.
    发明申请
    RESONANT FILTER BASED ON AN N/MEMS MATRIX 有权
    基于N / MEMS矩阵的谐振滤波器

    公开(公告)号：US20110128095A1

    公开(公告)日：2011-06-02

    申请号：US12936773

    申请日：2009-04-06

    Applicant: Chady Kharrat ,  Eric Colinet

    Inventor： Chady Kharrat ,  Eric Colinet

    IPC: H03H9/52 ,  H03H9/24 ,  H03H9/125

    CPC classification number: H03H9/02433 ,  H03H9/2447 ,  H03H9/525 ,  H03H2009/02456

    Abstract: A resonant filter including a matrix of n×m resonators of N/MEMS type, each resonator including an actuating mechanism and a detection mechanism. An input of the filter, configured to receive an electrical input signal, is electrically connected to the resonator actuating mechanism. The outputs of the resonator detecting mechanism are electrically connected together and to an output of the filter, such that the signal to be obtained as an output of the filter is an image of the sum of the mechanical responses of the resonators. The resonators are not mechanically coupled together.

    Abstract translation: 一种谐振滤波器，包括N / m m型谐振器的矩阵，每个谐振器包括致动机构和检测机构。 被配置为接收电输入信号的滤波器的输入电连接到谐振器致动机构。 谐振器检测机构的输出电连接到滤波器的输出端，使得作为滤波器的输出获得的信号是谐振器的机械响应之和的图像。 谐振器不是机械耦合在一起的。

    RESONATOR
    13.
    发明申请
    RESONATOR 失效
    谐振器

    公开(公告)号：US20110080224A1

    公开(公告)日：2011-04-07

    申请号：US12892672

    申请日：2010-09-28

    Applicant: Robert James Pascoe LANDER

    Inventor： Robert James Pascoe LANDER

    IPC: H03B5/30 ,  H05K13/00

    CPC classification number: H03H9/02448 ,  B81B3/0072 ,  B81B2201/0271 ,  B81B2203/0118 ,  H03H9/2447 ,  Y10T29/49002

    Abstract: A resonator having an effective spring constant (kz) and comprising a beam having a beam spring constant (kB) adapted to resonate in an oscillation direction, and extending at a non-zero angle (θ) to the oscillation direction, wherein the resonator has a predetermined geometry and is formed from one or more materials, the or each material having a coefficient of thermal expansion (CTE), the CTE of the or each material together with the predetermined geometry of the resonator causing θ to vary with temperature, such that the temperature dependence of the beam spring constant is compensated for, resulting in the effective spring constant of the resonator remaining substantially constant within an operating temperature range.

    Abstract translation: 一种具有有效弹簧常数（kz）并且包括具有适于在振荡方向上谐振并且以非零角度（θ）延伸到振荡方向的光束弹簧常数（kB）的光束的谐振器，其中所述谐振器 具有预定的几何形状并且由一种或多种材料形成，所述材料或每种材料具有热膨胀系数（CTE），所述材料的每个材料的CTE以及所述谐振器的预定几何形状引起所述材料; 随着温度而变化，使得光束弹簧常数的温度依赖性被补偿，导致共振器的有效弹簧常数在工作温度范围内保持基本恒定。

    Vacuum packaged single crystal silicon device
    14.
    发明授权
    Vacuum packaged single crystal silicon device 失效
    真空封装单晶硅器件

    公开(公告)号：US07662655B2

    公开(公告)日：2010-02-16

    申请号：US12164850

    申请日：2008-06-30

    Applicant: Ijaz H. Jafri ,  Galen P. Magendanz

    Inventor： Ijaz H. Jafri ,  Galen P. Magendanz

    IPC: H01L21/00

    CPC classification number: B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

    Abstract: A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

    Abstract translation: 一种用于形成具有使用双晶片工艺形成的单晶硅（SCS）微机械谐振器的振动微机械结构的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容空气 间隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 窗口在谐振器晶片的有源层中打开; 用光致抗蚀剂掩蔽谐振器晶片的有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工SCS谐振器; 随后将光致抗蚀剂干燥剥离。 图案化的SCS覆盖层结合到谐振器晶片，从而形成密封的芯片级晶片级真空封装器件。

    Nanomechanical Oscillator
    15.
    发明申请
    Nanomechanical Oscillator 有权
    纳米机械振荡器

    公开(公告)号：US20090294638A1

    公开(公告)日：2009-12-03

    申请号：US11813342

    申请日：2006-01-04

    Applicant: Pritiraj Mohanty ,  Alexei Gaidarzhy ,  Guiti Zolfagharkhani ,  Robert Badzey

    Inventor： Pritiraj Mohanty ,  Alexei Gaidarzhy ,  Guiti Zolfagharkhani ,  Robert Badzey

    IPC: H01J3/14 ,  H03B5/30 ,  H03K3/01

    CPC classification number: B81B3/0018 ,  H03H9/2431 ,  H03H9/2447 ,  H03H9/485 ,  H03H9/505 ,  H03H2009/02496 ,  H03H2009/02511 ,  H03H2009/02519 ,  H03H2009/02527

    Abstract: A mechanical oscillator has components with dimensions in a sub-micron range to produce resonance mode oscillations in a gigahertz range. A major element is coupled to a minor, sub-micron element to produce large amplitude gigahertz frequency oscillation that is detected with readily available techniques. The mechanical structure can be formed according to a number of geometries including beams and rings and is excited with electrostatic, magnetic and thermal related forces, as well as other excitation techniques. The mechanical structure can be arranged in arrays for applications such as amplification and mixing and is less sensitive to shock and radiative environments than electrical or optical counterparts.

    Abstract translation: 机械振荡器具有尺寸在亚微米范围内的部件，以产生千兆赫兹范围内的谐振模式振荡。 一个主要元件耦合到次要的亚微米元件，以产生用现有技术检测的大幅度千兆赫兹频率振荡。 机械结构可以根据包括梁和环的几何形状形成，并且被静电，磁和热相关的力以及其它激发技术激发。 机械结构可以布置成阵列用于诸如放大和混合的应用，并且对电击或辐射环境的敏感性不如电气或光学对应物。

    MEMS resonator array structure and method of operating and using same
    16.
    发明申请
    MEMS resonator array structure and method of operating and using same 有权
    MEMS谐振器阵列结构及其操作和使用方法

    公开(公告)号：US20090153258A1

    公开(公告)日：2009-06-18

    申请号：US12002894

    申请日：2007-12-18

    Applicant: Markus Lutz ,  Zhiyu Pan ,  Aaron Partridge

    Inventor： Markus Lutz ,  Zhiyu Pan ,  Aaron Partridge

    IPC: H03B5/30

    CPC classification number: H03B5/30 ,  H03H9/02259 ,  H03H9/02338 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/505 ,  H03H2009/0233 ,  H03H2009/02385 ,  H03H2009/0244 ,  H03H2009/02503

    Abstract: Each one of resonators arranged in an N×M MEMS array structure includes substantially straight elongated beam sections connected by curved/rounded sections and is mechanically coupled to at least one adjacent resonator of the array via a coupling section, each elongated beam section connected to another elongated beam section at a distal end via the curved/rounded sections forming a geometric shape (e.g., a rounded square), and the coupling sections disposed between elongated beam sections of adjacent resonators. The resonators, when induced, oscillate at substantially the same frequency, in combined elongating/breathing and bending modes, i.e., beam sections exhibiting elongating/breathing-like and bending-like motions. One or more of the array structure's resonators may include one or more nodal points (i.e., that are substantially stationary and/or experience little movement), which are suitable and/or preferable locations to anchor the resonator/array to the substrate, in one or more areas of the structure's curved sections.

    Abstract translation: 以NxM MEMS阵列结构排列的每个谐振器包括通过弯曲/圆形部分连接的基本上直的细长梁部分，并且经由耦合部分机械耦合到阵列的至少一个相邻谐振器，每个细长梁部分连接到另一个细长梁 通过形成几何形状（例如，圆形正方形）的弯曲/圆形部分的远端处的截面，以及设置在相邻谐振器的细长梁部分之间的耦合部分。 谐振器在被诱导时以组合的延长/呼吸和弯曲模式即基本上相同的频率振荡，即表现出延长/呼吸状和弯曲状运动的梁部分。 一个或多个阵列结构的谐振器可以包括一个或多个节点（即，基本上静止和/或经历少量运动），这些点是合适的和/或优选的将谐振器/阵列锚定到衬底的位置，一个 或更多的结构的弯曲部分的区域。

    Vacuum packaged single crystal silicon device
    17.
    发明授权
    Vacuum packaged single crystal silicon device 失效
    真空封装单晶硅器件

    公开(公告)号：US07407826B2

    公开(公告)日：2008-08-05

    申请号：US11322842

    申请日：2005-12-30

    Applicant: Ijaz H. Jafri ,  Galen P. Magendanz

    Inventor： Ijaz H. Jafri ,  Galen P. Magendanz

    IPC: H01L21/00

    CPC classification number: B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

    Abstract: A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

    Abstract translation: 一种用于形成具有使用双晶片工艺形成的单晶硅（SCS）微机械谐振器的振动微机械结构的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容空气 间隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 窗口在谐振器晶片的有源层中打开; 用光致抗蚀剂掩蔽谐振器晶片的有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工SCS谐振器; 随后将光致抗蚀剂干燥剥离。 图案化的SCS覆盖层结合到谐振器晶片，从而形成密封的芯片级晶片级真空封装器件。

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