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公开(公告)号：US09559660B2
公开(公告)日：2017-01-31
申请号：US13985876
申请日：2012-02-17
CPC分类号： H03H9/02448 , B81B3/0078 , B81B2201/0271 , H01L41/18 , H03H3/0072 , H03H3/0076 , H03H9/2405 , H03H9/2447 , H03H2009/02503 , H03H2009/02519 , H03H2009/241 , H03H2009/2442 , Y10T29/42
摘要： The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.
摘要翻译： 本发明涉及一种微机械装置及其制造方法。 该装置包括由半导体材料制成的振荡或偏转元件，其包括n型掺杂剂和功能性地连接到所述振荡或偏转元件的激励或感测装置。 根据本发明，振荡或偏转元件基本均匀地掺杂有所述n型掺杂剂。 本发明允许设计具有低温度漂移的各种实用谐振器。
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公开(公告)号：US20140077898A1
公开(公告)日：2014-03-20
申请号：US13985876
申请日：2012-02-17
CPC分类号： H03H9/02448 , B81B3/0078 , B81B2201/0271 , H01L41/18 , H03H3/0072 , H03H3/0076 , H03H9/2405 , H03H9/2447 , H03H2009/02503 , H03H2009/02519 , H03H2009/241 , H03H2009/2442 , Y10T29/42
摘要： The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.
摘要翻译： 本发明涉及一种微机械装置及其制造方法。 该装置包括由半导体材料制成的振荡或偏转元件，其包括n型掺杂剂和功能性地连接到所述振荡或偏转元件的激励或感测装置。 根据本发明，振荡或偏转元件基本均匀地掺杂有所述n型掺杂剂。 本发明允许设计具有低温度漂移的各种实用谐振器。
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公开(公告)号：US20120286903A1
公开(公告)日：2012-11-15
申请号：US13468052
申请日：2012-05-10
申请人： Mika Prunnila , Antti Jaakkola , Tuomas Pensala
发明人： Mika Prunnila , Antti Jaakkola , Tuomas Pensala
CPC分类号： B81B3/0072 , B81B2201/0235 , B81B2201/0242 , B81B2201/0271 , B81C2201/0164 , B81C2201/0167 , B81C2201/0177 , G06F17/5045 , H03H9/02448 , H03H9/2447 , H03H2009/2442
摘要： The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.
摘要翻译： 本发明涉及一种微机械装置，其包括能够偏转或谐振并且包括具有不同材料特性的至少两个区域的半导体元件和功能性耦合到所述半导体元件的驱动或感测装置。 根据本发明，所述区域中的至少一个包括一种或多种n型掺杂剂，并且所述区域的相对体积，掺杂浓度，掺杂剂和/或晶体取向被构造成使得广义刚度的温度敏感度 在区域的至少一个温度下符号相反，半导体元件的整体刚度的总体温度漂移在100℃的温度范围内为50ppm以下。该器件可以是谐振器。 还公开了一种设计该设备的方法。
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4.发明授权Micromechanical device including N-type doping for providing temperature compensation and method of designing thereof 有权包括用于提供温度补偿的N型掺杂的微机械装置及其设计方法公开(公告)号：US08558643B2
公开(公告)日：2013-10-15
申请号：US13468052
申请日：2012-05-10
申请人： Mika Prunnila , Antti Jaakkola , Tuomas Pensala
发明人： Mika Prunnila , Antti Jaakkola , Tuomas Pensala
CPC分类号： B81B3/0072 , B81B2201/0235 , B81B2201/0242 , B81B2201/0271 , B81C2201/0164 , B81C2201/0167 , B81C2201/0177 , G06F17/5045 , H03H9/02448 , H03H9/2447 , H03H2009/2442
摘要： The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.
摘要翻译： 本发明涉及一种微机械装置，其包括能够偏转或谐振并且包括具有不同材料特性的至少两个区域的半导体元件和功能性耦合到所述半导体元件的驱动或感测装置。 根据本发明，所述区域中的至少一个包括一种或多种n型掺杂剂，并且所述区域的相对体积，掺杂浓度，掺杂剂和/或晶体取向被构造成使得广义刚度的温度敏感度 在区域的至少一个温度下符号相反，半导体元件的整体刚度的总体温度漂移在100℃的温度范围内为50ppm以下。该器件可以是谐振器。 还公开了一种设计该设备的方法。
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公开(公告)号：US08786166B2
公开(公告)日：2014-07-22
申请号：US13209099
申请日：2011-08-12
申请人： Antti Jaakkola , Tuomas Pensala , Jyrki Kiihamäki
发明人： Antti Jaakkola , Tuomas Pensala , Jyrki Kiihamäki
IPC分类号： H01L41/09
CPC分类号： H03H3/0072 , H03H3/0076 , H03H9/02448 , H03H9/2463 , H03H9/505 , H03H2009/02385 , H03H2009/02503 , H03H2009/2442
摘要： The invention relates to a microelectromechanical resonators and a method of manufacturing thereof. The resonator comprises at least two resonator elements made from semiconductor material, the resonator elements being arranged laterally with respect to each other as an array, at least one transducer element coupled to said resonator elements and capable of exciting a resonance mode to the resonator elements. According to the invention, said at least one transducer element is a piezoelectric transducer element arranged laterally with respect to the at least two resonator elements between the at least two resonator elements and adapted to excite to the resonator elements as said resonance mode a resonance mode whose resonance frequency is dependent essentially only on the c44 elastic parameter of the elastic modulus of the material of the resonator elements. By means of the invention, electrostatic actuation and problems associated therewith can be avoided and accurate resonators can be manufactured.
摘要翻译： 本发明涉及一种微机电谐振器及其制造方法。 谐振器包括由半导体材料制成的至少两个谐振器元件，谐振器元件相对于彼此横向地布置为阵列，耦合到所述谐振器元件并能够激励谐振元件的谐振模式的至少一个换能器元件。 根据本发明，所述至少一个换能器元件是在所述至少两个谐振元件之间相对于所述至少两个谐振器元件横向布置的压电换能器元件，并且适于作为所述谐振模式激励谐振元件， 谐振频率基本上仅取决于谐振器元件的材料的弹性模量的c44弹性参数。 通过本发明，可以避免静电致动和与之相关的问题，并且可以制造精确的谐振器。
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公开(公告)号：US09071226B2
公开(公告)日：2015-06-30
申请号：US13816493
申请日：2011-08-11
申请人： Antti Jaakkola , Tuomas Pensala
发明人： Antti Jaakkola , Tuomas Pensala
CPC分类号： H03H9/19 , H03H3/013 , H03H9/02448 , H03H2009/02496 , H03H2009/02511 , H03H2009/02519 , H03H2009/2442 , Y10T29/41
摘要： The invention relates to a temperature compensated micromechanical resonator and method of manufacturing thereof. The resonator comprises a resonator element comprising a semiconductor crystal structure, which is doped so as to reduce its temperature coefficient of frequency, transducer means for exciting to the resonator element a vibrational mode. According to the invention the crystal orientation and shape of the resonator element are chosen to allow for a shear mode having a saddle point to be excited to the resonator element, and said transducer means are adapted to excite said shear mode to the resonator element. Accurate micromechanical resonators with now temperature drift can be achieved by means of the invention.
摘要翻译： 本发明涉及一种温度补偿微机械谐振器及其制造方法。 谐振器包括谐振元件，其包括被掺杂以便降低其频率的温度系数的半导体晶体结构，用于激励谐振器元件的振动模式的振动器装置。 根据本发明，谐振器元件的晶体取向和形状被选择为允许具有鞍点的剪切模式被激励到谐振器元件，并且所述换能器装置适于将谐振器元件的所述剪切模式激发。 具有现在温度漂移的精确的微机械谐振器可以通过本发明实现。
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公开(公告)号：US08916942B2
公开(公告)日：2014-12-23
申请号：US12779104
申请日：2010-05-13
申请人： Tuomas Pensala , Antti Jaakkola
发明人： Tuomas Pensala , Antti Jaakkola
CPC分类号： H03H3/0076 , H03H9/1057 , H03H9/2436 , H03H2009/02503 , H03H2009/2442
摘要： The invention relates to temperature compensated micro-electro-mechanical (MEMS) resonators (300) preferably made of silicon. Prior art MEMS resonators have a significant temperature coefficient of resonance frequency, whereby it is difficult to achieve a sufficiently good frequency stability. The inventive MEMS resonator has a resonance plate (310) which resonates in Lamé mode. The resonance plate is p+ doped material, such as silicon doped with boron, and the concentration of the p+ doping is such that the plate has a temperature coefficient of resonance frequency near to zero. The tensile stress and the second order temperature coefficient can further be reduced by doping the plate with germanium.
摘要翻译： 本发明涉及优选由硅制成的温度补偿微机电（MEMS）谐振器（300）。 现有技术的MEMS谐振器具有显着的谐振频率温度系数，难以实现足够好的频率稳定性。 本发明的MEMS谐振器具有以Lamé模式谐振的谐振板（310）。 共振板是p +掺杂材料，例如掺杂硼的硅，并且p +掺杂的浓度使得板具有接近于零的共振频率的温度系数。 通过用锗掺杂板可以进一步降低拉伸应力和二次温度系数。
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公开(公告)号：US20130187724A1
公开(公告)日：2013-07-25
申请号：US13816493
申请日：2011-08-11
申请人： Antti Jaakkola , Tuomas Pensala
发明人： Antti Jaakkola , Tuomas Pensala
CPC分类号： H03H9/19 , H03H3/013 , H03H9/02448 , H03H2009/02496 , H03H2009/02511 , H03H2009/02519 , H03H2009/2442 , Y10T29/41
摘要： The invention relates to a temperature compensated micromechanical resonator and method of manufacturing thereof. The resonator comprises a resonator element comprising a semiconductor crystal structure, which is doped so as to reduce its temperature coefficient of frequency, transducer means for exciting to the resonator element a vibrational mode. According to the invention the crystal orientation and shape of the resonator element are chosen to allow for a shear mode having a saddle point to be excited to the resonator element, and said transducer means are adapted to excite said shear mode to the resonator element. Accurate micromechanical resonators with now temperature drift can be achieved by means of the invention.
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公开(公告)号：US20130278356A1
公开(公告)日：2013-10-24
申请号：US13879028
申请日：2011-10-14
申请人： Johanna Meltaus , Tuomas Pensala
发明人： Johanna Meltaus , Tuomas Pensala
IPC分类号： H03H9/54
摘要： The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer, an input-port on the piezoelectric layer changing electrical signal into an acoustic wave (SAW, BAW), and an output-port on the piezoelectric layer changing acoustic signal into electrical signal. In accordance with the invention the ports include electrodes positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode.
摘要翻译： 本发明涉及一种声耦合薄膜BAW滤波器，包括压电层，将电信号改变成声波（SAW，BAW）的压电层上的输入端口和压电层上的输出端口改变声学 信号变成电信号。 根据本发明，端口包括彼此靠近定位的电极，并且滤波器设计成以一阶厚度延伸TE1模式操作。
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公开(公告)号：US20150333730A1
公开(公告)日：2015-11-19
申请号：US14810481
申请日：2015-07-28
申请人： Johanna Meltaus , Tuomas Pensala
发明人： Johanna Meltaus , Tuomas Pensala
IPC分类号： H03H9/205
CPC分类号： H03H9/02228 , H03H9/0095 , H03H9/02007 , H03H9/02125 , H03H9/175 , H03H9/177 , H03H9/205 , H03H9/564 , H03H9/584 , H03H2003/0414 , Y10T29/42
摘要： In a bulk acoustic wave (BAW) filter based on laterally acoustically coupled resonators on piezoelectric thin films, one can utilize two distinct acoustic plate wave modes of different nature, for example the thickness extensional (longitudinal) TE1 and the second harmonic thickness shear (TS2) mode to form a bandpass response. The invention is based on the excitation of at least two lateral standing wave resonances belonging to different plate wave modes that facilitate the transmission of signal. The passband is designed by tailoring the wave propagation characteristics in the device such that the resonances are excited at suitable frequencies to form a passband of a desired shape. The bandwidth of the filter described herein may therefore be more than twice that of the existing state-of-the-art microacoustic filters. Consequently, it has significant commercial and technological value.
摘要翻译： 在基于压电薄膜上的横向声耦合谐振器的体声波（BAW）滤波器中，可以利用不同性质的两种不同的声板波模，例如厚度延伸（纵向）TE1和二次谐波厚度剪切（TS2 ）模式以形成带通响应。 本发明基于属于促进信号传输的不同平板波模式的至少两个横向驻波共振的激发。 该通带是通过调整装置中的波传播特性来设计的，使得谐振在合适的频率被激发以形成所需形状的通带。 因此，这里描述的滤波器的带宽可以是现有的最先进的微声滤波器的两倍以上。 因此，具有重要的商业和技术价值。
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