公开(公告)号：US20180062644A1

公开(公告)日：2018-03-01

申请号：US15254696

申请日：2016-09-01

申请人： Analog Devices, Inc.

发明人： Sandro Herrera ,  Alan K. Jeffery

IPC分类号： H03K17/687 ,  H03F3/45 ,  H03G3/30

CPC分类号： H03K17/687 ,  H03F3/45475 ,  H03F2200/261 ,  H03F2203/45138 ,  H03F2203/45522 ,  H03G1/0088 ,  H03G3/001 ,  H03G5/24 ,  H03K2217/0018 ,  H03K2217/0054

摘要： A low capacitance n-channel analog switch circuit, a p-channel analog switch circuit, and a full CMOS transmission gate (T-gate) circuit are described. Resistive decoupling can be used to isolate the switch or T-gate from AC grounds, such as one or more switch control signal inputs or supply voltages. A semiconductor region that is separated from a body region of a pass field-effect transistor (FET) can be coupled to or driven to a voltage similar to the input voltage or other desired voltage to help reduce parasitic capacitance of the switch or T-gate. The switch or T-gate can have improved frequency bandwidth or frequency response. The switch can be useful in a programmable gain amplifier (PGA) or programmable gain instrumentation amplifier (PGIA) or other circuit in which excessive switch capacitance could degrade circuit performance.

公开(公告)号：US09893057B2

公开(公告)日：2018-02-13

申请号：US15585198

申请日：2017-05-03

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： Andreas Huerner ,  Tobias Erlbacher

IPC分类号： H01L27/07 ,  H03K17/567 ,  H01L29/16 ,  H01L29/808 ,  H01L29/739 ,  H01L27/02 ,  H02H3/08

CPC分类号： H01L27/0705 ,  H01L27/0266 ,  H01L29/1608 ,  H01L29/7392 ,  H01L29/8083 ,  H02H3/08 ,  H03K17/0828 ,  H03K17/567 ,  H03K17/6872 ,  H03K2217/0018

摘要： A monolithically integrated semiconductor switch, particularly a circuit breaker, has regenerative turn-off behavior. The semiconductor switch has two monolithically integrated field effect transistors, for example a p-JFET and a n-JFET. The source electrodes of both JFETs and the well region of the n-JFET are short circuited. In addition, the gate electrodes of both JFETs and the drain electrode of the p-JFET are short-circuited via the cathode. In contrast, the well region of the p-JFET is short-circuited to the anode. In this way, a monolithically integrated semiconductor switch is created which turns off automatically when a certain anode voltage level or a certain anode current level is exceeded. The threshold values for the anode voltage and the anode current can be set by appropriate dimensioning of the elements. In this way, it is possible to achieve blocking strengths of up to 200 kV with fast response behavior.

公开(公告)号：US09818854B2

公开(公告)日：2017-11-14

申请号：US15133679

申请日：2016-04-20

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Peter Moens ,  Balaji Padmanabhan ,  Herbert De Vleeschouwer ,  Prasad Venkatraman

IPC分类号： H01L27/088 ,  H01L29/40 ,  H01L29/747 ,  H01L29/74 ,  H01L23/495 ,  H01L29/205 ,  H01L29/423 ,  H01L29/778 ,  H01L25/11 ,  H03K17/687 ,  H01L23/00 ,  H01L21/8258 ,  H01L27/06

CPC分类号： H01L29/747 ,  H01L21/8258 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/40 ,  H01L25/115 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/205 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7416 ,  H01L29/742 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H03K17/6874 ,  H03K2017/6878 ,  H03K2217/0009 ,  H03K2217/0018 ,  H01L2224/37099

摘要： An electronic device can include a bidirectional HEMT. In an aspect, the electronic device can include a pair of switch gate and blocking gate electrodes, wherein the switch gate electrodes are not electrically connected to the blocking gate electrodes, and the first blocking, first switch, second blocking, and second switch gate electrodes are on the same die. In another aspect, the electronic device can include shielding structures having different numbers of laterally extending portions. In a further aspect, the electronic device can include a gate electrode and a shielding structure, wherein a portion of the shielding structure defines an opening overlying the gate electrode.

公开(公告)号：US20170310159A1

公开(公告)日：2017-10-26

申请号：US15646085

申请日：2017-07-10

申请人： NXP USA, Inc.

发明人： Ashita Batra ,  Mayank Jain

IPC分类号： H02J9/06 ,  H02J1/10 ,  H03K17/687 ,  H03K17/693

CPC分类号： H02J9/061 ,  H02J1/10 ,  H03K17/687 ,  H03K17/693 ,  H03K2217/0018 ,  Y10T307/625

摘要： A system for providing a first voltage generated by a main supply and a second voltage generated by a battery to an integrated circuit (IC) includes supply-selection, control logic and switching circuits. The supply-selection circuit includes first, second, and third transistors. The switching circuit includes fourth and fifth transistors that supply the first and second voltages to the IC when switched on. The supply-selection circuit selects and provides the higher of the first and second voltages to body terminals of the fourth and fifth transistors for maintaining required body-bias voltage conditions. The control logic circuit generates a first control signal as long as the first voltage is within a predetermined range for keeping the fourth transistor switched on and a second control signal when the first voltage is not within the predetermined range for switching on the fifth transistor to supply the second voltage.

公开(公告)号：US20170187375A1

公开(公告)日：2017-06-29

申请号：US15460675

申请日：2017-03-16

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Anuj Madan ,  Fikret Altunkilic ,  Guillaume Alexandre Blin ,  Haki Cebi

IPC分类号： H03K17/687 ,  H01L27/12 ,  H01L27/092 ,  H01L23/66

CPC分类号： H01L27/092 ,  H01L23/66 ,  H01L27/12 ,  H01L27/1203 ,  H01L2224/48227 ,  H01L2924/15192 ,  H03K17/102 ,  H03K17/693 ,  H03K2217/0018

摘要： A radio-frequency (RF) switch includes a field-effect transistor (FET) disposed between a first node and a second node, the FET having a source, a drain, a gate, and a body. The RF switch further includes a coupling circuit including a first path and a second path, the first path being connected between the gate and one of the source or the drain via a first resistor in series with a first capacitor, the second path being connected between the body and the one of the source or the drain via a second resistor in series with a second capacitor, the coupling circuit configured to allow discharge of interface charge from either or both of the gate and body.

公开(公告)号：US09660062B2

公开(公告)日：2017-05-23

申请号：US15133657

申请日：2016-04-20

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Balaji Padmanabhan ,  Prasad Venkatraman ,  Chun-Li Liu ,  Peter Moens

IPC分类号： H01L29/66 ,  H01L29/747 ,  H01L29/74 ,  H01L27/088 ,  H01L23/495 ,  H01L29/205 ,  H01L29/40 ,  H01L29/423 ,  H01L29/778 ,  H01L25/11 ,  H03K17/687 ,  H01L23/00

CPC分类号： H01L29/747 ,  H01L21/8258 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/40 ,  H01L25/115 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/205 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7416 ,  H01L29/742 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H03K17/6874 ,  H03K2017/6878 ,  H03K2217/0009 ,  H03K2217/0018 ,  H01L2224/37099

摘要： An electronic device can include a bidirectional HEMT. In an aspect, a packaged electronic device can include the bidirectional HEMT can be part of a die having a die substrate connection that is configured to be at a fixed voltage, electrically connected to drain/source or source/drain depending on current flow through the bidirectional HEMT, or electrically float. In another aspect, the electronic device can include Kelvin connections on both the drain/source and source/drain side of the circuit. In a further embodiment, a circuit can include the bidirectional HEMT, switch transistors, and diodes with breakdown voltages to limit voltage swings at the drain/source and source/drain of the switch transistors.

公开(公告)号：US09659933B2

公开(公告)日：2017-05-23

申请号：US14697461

申请日：2015-04-27

申请人： STMicroelectronics International N.V.

发明人： Vikas Rana ,  Amit Chhabra

IPC分类号： H03K17/693 ,  H01L27/092 ,  H01L27/12 ,  H03K17/00

CPC分类号： H03K17/693 ,  H01L27/092 ,  H01L27/1203 ,  H03K17/005 ,  H03K2217/0018

摘要： An integrated circuit die includes a plurality of transistors formed in a semiconductor substrate, the body regions of the transistors on a doped well region of the semiconductor substrate. A body bias voltage generator generates a positive body bias voltage, and a negative body bias voltage in the ground body bias voltage. A multiplexer selectively outputs one of the positive, negative, or ground body bias voltage to the doped well region of the semiconductor substrate based on the temperature of the semiconductor substrate.

公开(公告)号：US20170047100A1

公开(公告)日：2017-02-16

申请号：US15337876

申请日：2016-10-28

申请人： Mie Fujitsu Semiconductor Limited

发明人： Lawrence T. Clark ,  David A. Kidd ,  Augustine Kuo

IPC分类号： G11C5/14 ,  H01L29/10 ,  H01L27/02 ,  G11C5/02 ,  G06F17/50

CPC分类号： H01L27/0222 ,  G05F3/205 ,  G06F17/5045 ,  G11C5/025 ,  G11C5/146 ,  G11C5/147 ,  G11C5/148 ,  H01L27/0928 ,  H01L29/7851 ,  H02M2003/076 ,  H02M2003/078 ,  H03K3/012 ,  H03K17/063 ,  H03K2217/0018

摘要： A system having an integrated circuit (IC) device can include a die formed on a semiconductor substrate and having a plurality of first wells formed therein, the first wells being doped to at least a first conductivity type; a global network configured to supply a first global body bias voltage to the first wells; and a first bias circuit corresponding to each first well and configured to generate a first local body bias for its well having a smaller setting voltage than the first global body bias voltage; wherein at least one of the first wells is coupled to a transistor having a strong body coefficient formed therein, which transistor may be a transistor having a highly doped region formed below a substantially undoped channel, the highly doped region having a dopant concentration greater than that the corresponding well.

摘要翻译： 具有集成电路（IC）装置的系统可以包括形成在半导体衬底上并具有形成在其中的多个第一阱的管芯，第一阱被掺杂至少为第一导电类型; 全球网络，其被配置为向所述第一井提供第一全局体偏置电压; 以及对应于每个第一阱的第一偏置电路，并且被配置为产生具有比第一全局体偏置电压更小的设置电压的阱的第一局部体偏置; 其中所述第一阱中的至少一个耦合到其中形成有强体系的晶体管，所述晶体管可以是形成在基本上未掺杂沟道下方的具有高掺杂区的晶体管，所述高掺杂区具有大于其掺杂浓度的掺杂浓度。 相应的井。

公开(公告)号：US09570974B2

公开(公告)日：2017-02-14

申请号：US12704737

申请日：2010-02-12

申请人： Winfried Bakalski ,  Hans Taddiken ,  Nikolay Ilkov ,  Herbert Kebinger

发明人： Winfried Bakalski ,  Hans Taddiken ,  Nikolay Ilkov ,  Herbert Kebinger

IPC分类号： H03K17/16 ,  H03K17/687 ,  H02M3/07

CPC分类号： H02M3/07 ,  H03K17/161 ,  H03K17/6871 ,  H03K2217/0018

摘要： A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

摘要翻译： 高频开关电路包括高频开关晶体管，其中高频信号路径经由高频开关晶体管的沟道路径延伸。 高频开关电路包括控制电路，并且控制电路被配置为根据由控制电路接收的控制信号将至少两个不同的偏置电位施加到高频开关晶体管的衬底。

公开(公告)号：US09564844B2

公开(公告)日：2017-02-07

申请号：US14806917

申请日：2015-07-23

申请人： Renesas Electronics Corporation

发明人： Ikuo Fukami

IPC分类号： H03K17/687 ,  H02P7/28 ,  H03K17/16 ,  H03K17/73 ,  H03K17/732 ,  H01L27/088 ,  H03K17/06

CPC分类号： H03K17/08104 ,  H01L27/088 ,  H01L27/0883 ,  H02M3/07 ,  H02P7/28 ,  H03K17/063 ,  H03K17/162 ,  H03K17/168 ,  H03K17/687 ,  H03K17/731 ,  H03K17/732 ,  H03K2217/0018 ,  H03K2217/0081

摘要： An output MOS transistor has a drain connected with a power supply and a source connected with an output terminal. The short-circuit MOS transistor has a source connected with the output terminal. The short-circuit MOS transistor is formed in a semiconductor substrate connected with the power supply. A switching device is formed in a semiconductor region which is formed in the semiconductor substrate, and contains a first diffusion layer connected with the gate of the output MOS transistor and a second diffusion layer formed in the semiconductor region and connected with the drain of the short-circuit MOS transistor.

摘要翻译： 输出MOS晶体管具有与电源连接的漏极和与输出端子连接的源极。 短路MOS晶体管具有与输出端子连接的源极。 短路MOS晶体管形成在与电源连接的半导体衬底中。 开关器件形成在形成在半导体衬底中的半导体区域中，并且包含与输出MOS晶体管的栅极连接的第一扩散层和形成在半导体区域中并与短路的漏极连接的第二扩散层 电路MOS晶体管。