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    Method for forming refractory tubing
    11.
    发明授权
    Method for forming refractory tubing 失效
    形成耐火材料管的方法

    公开(公告)号：US4197157A

    公开(公告)日：1980-04-08

    申请号：US604536

    申请日：1975-08-14

    Applicant: John S. Haggerty

    Inventor： John S. Haggerty

    IPC: B23K26/067 ,  B23K26/12 ,  C03B23/047 ,  C04B35/653 ,  C30B13/00 ,  C30B13/24 ,  C30B29/64 ,  H01J9/24 ,  B01J17/10

    CPC classification number: B23K26/127 ,  B23K26/0619 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/067 ,  B23K26/12 ,  B23K26/123 ,  C03B23/047 ,  C04B35/653 ,  C30B13/00 ,  C30B13/24 ,  C30B29/20 ,  C30B29/66 ,  H01J9/247 ,  Y10S117/904

    Abstract: Refractory tubings, either in amorphous, polycrystalline or single crystal form, are made by moving a preformed tubing of a refractory material and a heated zone relative to each other, the heating zone providing sufficient heat to melt through the tubing and form a molten ring which is continuously advanced through the tubing. The heat source may be located externally or internally of the tubing wall or in both positions. The tubings may be formed as single crystals by using appropriate seeds; and by controlling the rate of movement of the tubing sections on either side of the molten ring the wall thickness and diameter of the final tubing may be adjusted.

    Abstract translation: 无定形，多晶或单晶形式的耐火管是通过相对于彼此移动耐火材料和加热区的预制管而制成的，加热区提供足够的热量以通过管熔化并形成熔融环， 通过管道连续前进。 热源可以位于管壁的外部或内部或两个位置。 管可以通过使用合适的种子形成为单晶; 并且通过控制熔融环两侧的管段的运动速率，可以调节最终管道的壁厚度和直径。

    Apparatus for zone refining
    12.
    发明授权
    Apparatus for zone refining 失效
    用于区域精炼的装置

    公开(公告)号：US4045181A

    公开(公告)日：1977-08-30

    申请号：US754155

    申请日：1976-12-27

    Applicant: John W. Burd ,  Bobbie D. Stone ,  William F. Tucker ,  Kedar P. Gupta

    Inventor： John W. Burd ,  Bobbie D. Stone ,  William F. Tucker ,  Kedar P. Gupta

    IPC: C30B13/00 ,  C30B13/20 ,  C30B13/28 ,  H01L21/208 ,  B01J17/10

    CPC classification number: C30B13/28 ,  Y10T117/1076 ,  Y10T117/1088

    Abstract: Improvements in apparatus for zone refining polycrystalline semiconductor rods to produce monocrystalline semiconductor rods are disclosed. In the apparatus, an inductive heating chamber is employed which has a longitudinal dimension independent of the length of the polycrystalline semiconductor rod to be processed. The longitudinal dimension of the induction heating chamber is limited only by considerations of the space required for the RF induction heating coil and related apparatus which must be mounted within the chamber, the viewing space required for the operator to observe the zone refining process, and the heating effect on the structures above and below the chamber. First and second gas tight bellows are provided which, respectively, surround the rod holder and the seed holder. One end of each of the first and second bellows is releasably and sealingly attached to the induction heating chamber, while the other end of each of the first and second bellows is attached to the base of the rod holder or seed holder, respectively. These bellows expand and collapse with the relative movement of the rod holder and seed holder with respect to the induction heating chamber. Moreover, with the rod holder displaced from the induction heating chamber, the first bellows may be detached from the chamber and collapsed to facilitate mounting a polycrystalline semiconductor rod to be refined in the rod holder, and when the refining process is complete and the seed holder is displaced from the chamber, the second bellows can be detached from the chamber and collapsed to facilitate the removal of the refined monocrystalline rod from the seedholder. In order to protect the lower most bellows from molten semiconductor, a plurality of telescoping metallic cylinders are positioned within the bellows and concentric therewith.

    Abstract translation: 公开了用于制造单晶半导体棒的区域精制多晶半导体棒的装置的改进。 在该装置中，使用感应加热室，其具有与待处理的多晶半导体棒的长度无关的纵向尺寸。 感应加热室的纵向尺寸仅受到RF感应加热线圈和必须安装在腔室内的相关设备所需的空间的考虑，操作者观察区域精炼过程所需的观察空间以及 对腔室上下结构的加热效应。 提供第一和第二气密波纹管，其分别围绕杆保持器和种子保持器。 第一和第二波纹管中的每一个的一端可释放地且密封地附接到感应加热室，而第一和第二波纹管中的每一个的另一端分别附接到杆保持器或种子保持器的基座。 这些波纹管相对于感应加热室相对于棒保持器和种子保持器的相对运动而膨胀和折叠。 此外，当杆保持器从感应加热室移动时，第一波纹管可以从腔室分离并折叠，以便于将要精制的多晶半导体棒安装在杆保持器中，并且当精炼过程完成并且种子保持器 从腔室移位，第二波纹管可以从腔室分离并且折叠以便于从种子夹持器移除精制的单晶棒。 为了保护最下面的波纹管免受熔融半导体的影响，多个可伸缩的金属圆筒位于波纹管内并与其同心。

    Silicon manufacture
    14.
    发明授权
    Silicon manufacture 失效
    硅制造

    公开(公告)号：US3977934A

    公开(公告)日：1976-08-31

    申请号：US537984

    申请日：1975-01-02

    Applicant: Arnold Lesk

    Inventor： Arnold Lesk

    IPC: C30B15/24 ,  C30B29/64 ,  B01J17/18 ,  B01J17/10

    CPC classification number: C30B15/24

    Abstract: A method of producing monocrystalline semiconductor material in web form from a source of polycrystalline semiconductor material. The source material is heated to form a molten zone on the end thereof, which is contacted by a thermal profile shaping member formed from the same type of semiconductor material as the semiconductor material to be produced. A monocrystalline seed crystal of the shape of the web desired then contacts the molten end of the source material near the shaping member and is withdrawn therefrom as monocrystalline semiconductor material forms on the end thereof.

    Abstract translation: 从多晶半导体材料源制造网状单晶半导体材料的方法。 源材料被加热以在其端部形成熔融区，其与由待制造的半导体材料相同类型的半导体材料形成的热分布成形构件接触。 然后所需的网状物的单晶种子晶体接触成形构件附近的源材料的熔融端，并在其末端形成单晶半导体材料，从而将其退出。

    Method of zonal melting of materials
    16.
    发明授权
    Method of zonal melting of materials 失效
    材料区域熔融法

    公开(公告)号：US3773499A

    公开(公告)日：1973-11-20

    申请号：US3773499D

    申请日：1968-04-03

    Applicant: MELNIKOV M ,  KAKABADZE A

    Inventor： MELNIKOV M ,  KAKABADZE A

    IPC: C30B13/00 ,  C30B13/06 ,  C22B9/02 ,  B01J17/10 ,  C22B57/00

    CPC classification number: C30B13/06 ,  C30B13/00

    Abstract: A method of zonal melting of materials without a crucible comprises the following steps: placing a layer of unrefined material upon the circumferential surface of a previously molten ingot of refined material; and zonal melting of the layer and ingot together in the course of which a floating zone is embedded to a predetermined depth of the initial ingot, thereby increasing the circumferential diameter of the ingot.

    Abstract translation: 没有坩埚的材料的区域熔融的方法包括以下步骤：将未精制材料层放置在预先熔化的精炼材料锭的圆周表面上; 并且层和锭的区域熔化在一起，其中浮动区域嵌入初始锭的预定深度，从而增加锭的圆周直径。

    Method of growing rod-shaped dislocation-free monocrystals, particularly of silicon, by crucible-free floating zone melting
    17.
    发明授权
    Method of growing rod-shaped dislocation-free monocrystals, particularly of silicon, by crucible-free floating zone melting 失效
    无定形浮选区熔体生长无定形单晶的方法，特别是硅，

    公开(公告)号：US3655345A

    公开(公告)日：1972-04-11

    申请号：US3655345D

    申请日：1968-04-08

    Applicant: SIEMENS AG

    Inventor： LONGO HANS-EBERHARD ,  KELLER WOLFGANG ,  VOGEL CARL-HEINZ

    IPC: C01B33/02 ,  C30B13/24 ,  C30B13/34 ,  C30B29/06 ,  H01L21/208 ,  B01J17/10

    CPC classification number: C30B13/34 ,  C30B13/24 ,  Y10S117/902 ,  Y10T117/1032

    Abstract: Method of growing rod-shaped monocrystals by floating zone melting includes adjusting the orientation of the seed crystal in its holder so that a main crystal axis thereof, which extends substantially in the longitudinal direction thereof, is inclined at an angle between 0.5* and 5* to the direction in which the rotary axis of the seed holder extends, and, at the start of the relative movement between the induction heating coil and the rod for passing a molten zone axially through the rod, the rod holder and the crystal holder are moved relatively away from one another so as to increase the spacing therebetween and form a bottleneckshaped constriction at the end of the rod to which the seed crystal is fused.

    Abstract translation: 通过浮区熔化生长棒状单晶的方法包括调节其保持器中的晶种的取向，使得其主要轴向基本沿其纵向方向延伸，其倾斜角为0.5°至5° 到种子保持器的旋转轴线延伸的方向，并且在感应加热线圈和棒之间的相对移动开始时，使得熔融区域轴向穿过杆，杆保持器和晶体保持器被移动 彼此相对远离，以便增加它们之间的间隔，并且在晶种被熔化的杆的端部处形成瓶颈状收缩。

    Apparauts for rod displacement crucible-free zone melting
    18.
    发明授权
    Apparauts for rod displacement crucible-free zone melting 失效
    适用于无差异区域磨矿的角位移装置

    公开(公告)号：US3615245A

    公开(公告)日：1971-10-26

    申请号：US3615245D

    申请日：1967-09-22

    Applicant: SIEMENS AG

    Inventor： EMEIS REIMER ,  KELLER WOLFGANG

    IPC: C30B13/32 ,  B01J17/10

    CPC classification number: C30B13/32 ,  Y10T117/106 ,  Y10T117/1072 ,  Y10T117/1076

    Abstract: Apparatus for crucible-free zone melting a crystalline rod comprising a melting zone chamber having a substantially horizontal wall formed with an opening therein, a slide member adjacent the horizontal wall outside of the chamber for sealingly covering the opening, a pair of spaced holders mounted in the chamber for vertically end supporting a crystalline rod between them, means for relatively displacing the end holders toward one another, an annular heating device surrounding and spaced from the rod and adapted to form a molten zone in the rod wherefrom a portion of the rod recrystallizes, means for displacing the slide member and the rod holder for the recrystallizing rod portion in a substantially horizontal direction transverse to the axis of the rod, and means for rotating at least the rod holder for the recrystallizing rod portion comprising a drive shaft extending vacuum-tightly through an opening in the slide member and the opening in the wall and connected to the rotatable holder in the chamber.

    Eccentric feed rotation in zone refining
    19.
    发明授权
    Eccentric feed rotation in zone refining 失效
    区域精炼中的偏心进给旋转

    公开(公告)号：US3561931A

    公开(公告)日：1971-02-09

    申请号：US3561931D

    申请日：1967-08-04

    Applicant: SIEMENS AG

    Inventor： VOGEL CARL-HEINZ ,  SPORRER LUDWIG

    IPC: C30B13/32 ,  B01J17/10

    CPC classification number: C30B13/32 ,  Y10S117/91 ,  Y10S117/912 ,  Y10T117/1072 ,  Y10T117/1076

    Abstract: PROCESS OF ZONE MELTING A SEMICONDUCTOR ROD HAVING UNDER PROCESS, A RECRYSTALLIZED PORTION AND SUPPLY PORTION TO BE RECRYSTALLIZED, EACH SEPARATED FROM THE OTHER BY A MOLTEN ZONE, INCLUDES SUPPORTING THE ROD SUBSTANTIALLY VERTICALLY BY FIRST AND SECOND HOLDERS RESPECTIVELY LOCATED AT THE FREE ENDS OF THE SUPPLY ROD PORTION AND THE RECRYSTALLIZED ROD PORTION, FORMING THE MOLTEN ZONE IN THE ROD WITH AN ANNULAR HEATING DEVICE SPACED FROM AND SURROUNDING THE ROD, RELATIVELY MOVING THE ROD AND THE HEATING DEVICE IN A SUBSTANTIALLY VERTICAL DIRECTION SO AS TO PASS THE MOLTEN ZONE ALONG THE ROD, ROTATING AT LEAST ONE OF THE END HOLDERS ABOUT THE SUBSTANTIALLY VERTICAL AXIS OF THE ROD PORTION AT THE FREE END OF WHICH THE END HOLDER IS LOCATED, RELATIVELY MOVING THE END HOLDER TOWARDS ONE ANOTHER AND LATERALLY AWAY FROM ONE ANOTHER AT PREDETERMINED SPEEDS SO AS TO INCREASE THE THICKNESS OF THE RECRYSTALLIZED ROD PORTION IN A DIRECTION RADIALLY OUTWARDLY TO THE ANNULAR HEATING DEVICE AND ROTATING THE SUPPLY ROD PORTION ABOUT AN AXIS ECCENTRIC TO THE SUBSTANTIALLY VERTICAL AXIS OF THE SUPPLY ROD PORTION. APPARATUS FOR CARRYING OUT THE FOREGOING METHOD INCLUDES SUBSTANTIALLY VERTICAL SPACED END HOLDERS SUPPORTING BETWEEN THEM A VERTICALLY EXTENDING SEMICONDUCTOR ROD HAVING A RECRYSTALLIZED PORTION AND A SUPPLY PORTION TO BE RECRYSTALLIZED DIVIDED BY A MOLTEN ZONE, MEANS FOR RELATIVELY DISPLACING THE END HOLDERS TOWARD ONE ANOTHER, AN ANNULAR HEATING DEVICE SURROUNDING AND SPACED FROM THE ROD AND ADAPTED TO FORM THE MOLTEN ZONE IN THE ROD, MEANS FOR DISPLACING THE HEATING DEVICE ALONG THE ROD SO AS TO PASS THE MOLTEN ZONE ALONG THE ROD, MEANS FOR ROTATING AT LEAST ONE OF THE END HOLDERS ABOUT ITS SUBSTANTIALLY VERTICAL AXIS, MEANS FOR DISPLACING ONE OF THE END HOLDERS IN A DIRECTION TRANSVERSE TO THE AXIS THEREOF SO THAT THE RECRYSTALLIZED ROD PORTION IS FORMED WITH A SPECIFIC DIAMETER EXTENDING IN DIRECTION TOWARD THE ANNULAR HEATING DEVICE, AND MEANS FOR ROTATING THE SUPPLY ROD PORTION ABOUT AN AXIS ECCENTRIC TO THE AXIS OF THE SUPPLY ROD PORTION.

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