公开(公告)号：US20050156521A1

公开(公告)日：2005-07-21

申请号：US11035914

申请日：2005-01-14

Applicant: Zvi Yaniv ,  Igor Pavlovsky ,  Richard Fink

Inventor： Zvi Yaniv ,  Igor Pavlovsky ,  Richard Fink

IPC: H01J3/08 ,  H01J21/04 ,  H01J29/52 ,  H01J1/02

CPC classification number: H01J21/04 ,  H01J3/08 ,  H01J29/52

Abstract: An optoelectronic modulator is based on the concentration of an electron beam from an electron gun by a tapered cavity, which sides are photosensitive and change the electrical conductivity under the illumination of light (electromagnetic radiation). The light modulation causes the corresponding changes in the current transported across the walls of the cavity. The remaining part of the electron current exits the cavity aperture and forms an amplitude-modulated divergent electron beam.

Abstract translation: 光电子调制器基于来自电子枪的锥形空腔的电子束的浓度，这些侧面是光敏的并且在光的照射下（电磁辐射）改变电导率。 光调制导致当前在空腔壁上传输的电流的相应变化。 电子电流的剩余部分离开腔孔并形成幅度调制的发散电子束。

公开(公告)号：US06069436A

公开(公告)日：2000-05-30

申请号：US882637

申请日：1997-06-25

Applicant: Roger W. Pryor

Inventor： Roger W. Pryor

IPC: C23C14/06 ,  C23C14/28 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J19/24 ,  H01J21/04

CPC classification number: H01J1/30 ,  C23C14/0647 ,  C23C14/28

Abstract: A cold cathode is formed of n-type boron nitride. The cathode may include a layer of diamond underlying the boron nitride. The cathodes are made by laser ablation or by sputtering. Electronic devices utilizing the boron nitride cathodes are also described.

Abstract translation: 冷阴极由n型氮化硼形成。 阴极可以包括氮化硼下面的金刚石层。 阴极通过激光烧蚀或溅射制成。 还描述了利用氮化硼阴极的电子器件。

公开(公告)号：US5920148A

公开(公告)日：1999-07-06

申请号：US818693

申请日：1997-03-19

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J3/02 ,  H01J9/02 ,  H01J21/04 ,  H01J21/10 ,  H01J31/12 ,  H01J1/16 ,  H01J19/24

CPC classification number: H01J21/04 ,  H01J21/105 ,  H01J3/022 ,  H01J31/127 ,  H01J9/025

Abstract: A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc. having one or more control electrodes 140 and/or 170 positioned to allow control of current from the emitter to the phosphor anode by an electrical signal applied to the control electrode. In a particularly simple embodiment, a single control electrode 140 is positioned in a plane below the emitter edge or tip 110 and automatically aligned to that edge. The display cell structure may be repeated many times in an array, and the display cell structure of the invention lends itself to novel array structures which are also disclosed. A fabrication process is disclosed using subprocess steps S1-S19 similar to those of semiconductor integrated circuit fabrication to produce the novel display cell structures and their arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates 20 and allow fabrication of devices having various functions and complexity.

公开(公告)号：US20170148604A1

公开(公告)日：2017-05-25

申请号：US15150895

申请日：2016-05-10

Applicant: STMICROELECTRONICS S.R.L. ,  STMICROELECTRONICS PTE LTD

Inventor： Davide Giuseppe Patti ,  Myung Sung Kim

IPC: H01J19/02 ,  H01J21/20 ,  H01J21/04 ,  H01J9/18

CPC classification number: H01J19/02 ,  H01J9/025 ,  H01J9/18 ,  H01J21/04 ,  H01J21/105 ,  H01J21/20 ,  H01J2209/012 ,  H01J2209/02

Abstract: A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60° with respect to a perpendicular to the surface of device.

公开(公告)号：US09099272B2

公开(公告)日：2015-08-04

申请号：US14250932

申请日：2014-04-11

Applicant: Micron Technology, Inc.

Inventor： Neal R. Rueger

IPC: H01J21/00 ,  H01J9/18 ,  B82Y15/00 ,  H01J21/04 ,  H01J21/10 ,  H01J9/02 ,  H01J63/02 ,  B82Y99/00

CPC classification number: H01J9/18 ,  B82Y15/00 ,  B82Y99/00 ,  H01J9/025 ,  H01J21/04 ,  H01J21/10 ,  H01J63/02 ,  H01J2201/30469 ,  Y10S977/939

Abstract: The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

Abstract translation: 本公开包括场发射装置实施例。 本公开还包括用于形成场发射器件的方法实施例。 一个装置实施例包括限定内部空间的壳体，该内部空间包括下部分和上部部分，位于壳体下部的阴极，耦合到阴极的细长纳米结构，位于壳体上部的阳极，以及 位于细长纳米结构和阳极之间的控制网格，以控制阳极和细长纳米结构之间的电子流。

公开(公告)号：US20050161668A1

公开(公告)日：2005-07-28

申请号：US10764168

申请日：2004-01-26

Applicant: Alexander Kastalsky ,  Sergey Shokhor

Inventor： Alexander Kastalsky ,  Sergey Shokhor

IPC: H01J19/24 ,  H01J21/04 ,  H01J21/10 ,  H01L29/88

CPC classification number: B82Y10/00 ,  H01J19/24 ,  H01J21/04 ,  H01J21/105 ,  H01J2201/30469 ,  Y10S977/876 ,  Y10S977/936 ,  Y10S977/938

Abstract: New, hybrid vacuum electron devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.

Abstract translation: 提出了新的混合真空电子器件，其中电子从纳米管中提取为真空。 每个纳米管或者单独地放置在阴极电极上或正常地生长到阴极平面。 纳米管阵列也被认为是乘以输出电流。 讨论了两端和三端设备配置。 在所有考虑的情况下，器件设计使得输入和输出电容都非常低，而电子提取到真空中的效率非常高，所以估计的工作频率预期为tera-Hz范围 。 也考虑了具有沿纳米管的弹道电子传播的新的真空三极管结构。

公开(公告)号：US6103298A

公开(公告)日：2000-08-15

申请号：US955097

申请日：1997-10-22

Applicant: Jonathan Sidney Edelson ,  Isaiah Watas Cox

Inventor： Jonathan Sidney Edelson ,  Isaiah Watas Cox

IPC: C23C14/12 ,  F25B21/00 ,  H01J1/02 ,  H01J1/13 ,  H01J1/14 ,  H01J1/30 ,  H01J21/04 ,  H01J21/10 ,  H01J45/00 ,  C25B11/04

CPC classification number: F25B21/00 ,  C23C14/12 ,  H01J1/02 ,  H01J1/13 ,  H01J1/14 ,  H01J1/30 ,  H01J21/04 ,  H01J21/105 ,  H01J45/00 ,  F25B2321/003 ,  F25B2400/15 ,  H01J2201/30426 ,  Y02B30/66

Abstract: Methods for making low work function electrodes either made from or coated with an electride material in which the electride material has lattice defect sites are described. Lattice defect sites are regions of the crystal structure where irregularities and deformations occur. Also provided are methods for making electrodes which consist of a substrate coated with a layer of a compound comprised of a cation complexed by an electride former, in which said complex has lattice defect sites. In addition, methods for making electrodes which consist of a bulk metal coated with a layer of an electride former having lattice defect sites are described. The electride former stabilizes the loss of electrons by surface sites on the metal, lowering the work-function of the coated surface.

Abstract translation: 描述了由电镀材料具有晶格缺陷部位的电极材料制成或涂覆低功函电极的方法。 晶格缺陷位点是发生不规则和变形的晶体结构区域。 还提供了制造电极的方法，其由涂覆有由电化学成形剂络合的阳离子组成的化合物层的基底组成，其中所述络合物具有晶格缺陷位点。 此外，描述了制造电极的方法，其由涂覆有具有晶格缺陷位点的电化学成形剂层的体金属组成。 电子前体通过金属上的表面位点稳定电子的损失，降低涂覆表面的功能。

公开(公告)号：US6037708A

公开(公告)日：2000-03-14

申请号：US263636

申请日：1999-03-05

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J3/02 ,  H01J9/02 ,  H01J21/04 ,  H01J21/10 ,  H01J31/12 ,  H01J1/16 ,  H01J19/24

CPC classification number: H01J21/04 ,  H01J21/105 ,  H01J3/022 ,  H01J31/127 ,  H01J9/025

Abstract: A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc. having one or more control electrodes 140 and/or 170 positioned to allow control of current from the emitter to the phosphor anode by an electrical signal applied to the control electrode. In a particularly simple embodiment, a single control electrode 140 is positioned in a plane below the emitter edge or tip 110 and automatically aligned to that edge. The display cell structure may be repeated many times in an array, and the display cell structure of the invention lends itself to novel array structures which are also disclosed. A fabrication process is disclosed using subprocess steps S1-S19 similar to those of semiconductor integrated circuit fabrication to produce the novel display cell structures and their arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates 20 and allow fabrication of devices having various functions and complexity.

Abstract translation: 横向发射极场发射器件具有薄膜发射极阴极50，薄膜发射极阴极50具有不超过几百埃的厚度，并具有具有小曲率半径的边缘或尖端110。 为了形成新颖的显示单元结构，阴极发光磷光体阳极60位于薄膜侧向发射极阴极50的平面的下方，允许荧光体阳极的顶表面的大部分在期望的方向上发光。 阳极接触层从下方接触荧光体阳极60，以形成不干扰光发射的掩埋阳极接触90。 当施加小的偏置电压时，阳极磷光体与阴极边缘或尖端精确地间隔开并且接收从侧向发射极阴极的边缘或尖端的场发射发射的电子。 该器件可以被配置为具有一个或多个控制电极140和/或170的二极管，三极管或四极管等，其被定位成允许通过施加到控制电极的电信号来控制从发射极到磷光体阳极的电流。 在特别简单的实施例中，单个控制电极140定位在发射器边缘或尖端110下方的平面中并自动对准该边缘。 显示单元结构可以在阵列中重复多次，并且本发明的显示单元结构本身也被公开了新颖的阵列结构。 使用类似于半导体集成电路制造的子过程步骤S1-S19来公开制造工艺以产生新的显示单元结构及其阵列。 制造工艺的各种实施例允许使用导电或绝缘基板20并且允许制造具有各种功能和复杂性的装置。

公开(公告)号：US5981071A

公开(公告)日：1999-11-09

申请号：US650623

申请日：1996-05-20

Applicant: Isaiah W. Cox

Inventor： Isaiah W. Cox

IPC: H01J1/30 ,  H01J19/24 ,  H01J21/04 ,  H01J1/02

CPC classification number: H01J21/04 ,  H01J1/30 ,  H01J19/24 ,  H01J2201/30457 ,  Y10T428/30

Abstract: A novel use of doped carbonaceous material is disclosed, integral to the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators. In the preferred embodiment, the use of nitrogen-doped diamond enhances the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.

Abstract translation: 公开了掺杂碳质材料的新用途，与真空二极管热泵和真空二极管热电偶发生器的操作是一体的。 在优选实施例中，使用掺杂氮的金刚石增强了真空二极管热泵和真空二极管热电发生器的操作。

公开(公告)号：US4115720A

公开(公告)日：1978-09-19

申请号：US783220

申请日：1977-03-31

Applicant: Jules David Levine

Inventor： Jules David Levine

IPC: H01J1/20 ,  H01J19/14 ,  H01J21/04 ,  H01J19/10

CPC classification number: H01J21/04 ,  H01J1/20 ,  H01J19/14

Abstract: Electronic device comprising an evacuated envelope containing a main thermionic cathode heated solely by energetic electrons emitted from an unheated auxiliary field-emission cathode.

Abstract translation: 电子设备包括一个真空外壳，其中包含仅由未加热的辅助场致发射阴极发射的能量电子加热的主热离子阴极。