公开(公告)号：US06388366B1

公开(公告)日：2002-05-14

申请号：US08438118

申请日：1995-05-08

Applicant: Roger W. Pryor

Inventor： Roger W. Pryor

IPC: C01L300

CPC classification number: H01J1/30 ,  C01B21/0605 ,  H01J2201/30446

Abstract: A cold cathode is formed of carbon nitride. The cathode may include layers of boron nitride and diamond underlying the carbon nitride. The cathodes are made by reactive laser ablation or by sputtering. Electronic devices utilizing the carbon nitride cathodes are also described.

Abstract translation: 冷阴极由碳氮化物形成。 阴极可以包括氮化碳层和碳纳米管下面的金刚石层。 阴极由反应激光烧蚀或溅射制成。 还描述了利用碳氮化物阴极的电子器件。

公开(公告)号：US06069436A

公开(公告)日：2000-05-30

申请号：US882637

申请日：1997-06-25

Applicant: Roger W. Pryor

Inventor： Roger W. Pryor

IPC: C23C14/06 ,  C23C14/28 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J19/24 ,  H01J21/04

CPC classification number: H01J1/30 ,  C23C14/0647 ,  C23C14/28

Abstract: A cold cathode is formed of n-type boron nitride. The cathode may include a layer of diamond underlying the boron nitride. The cathodes are made by laser ablation or by sputtering. Electronic devices utilizing the boron nitride cathodes are also described.

Abstract translation: 冷阴极由n型氮化硼形成。 阴极可以包括氮化硼下面的金刚石层。 阴极通过激光烧蚀或溅射制成。 还描述了利用氮化硼阴极的电子器件。

公开(公告)号：US5483920A

公开(公告)日：1996-01-16

申请号：US102605

申请日：1993-08-05

Applicant: Roger W. Pryor

Inventor： Roger W. Pryor

IPC: C23C14/02 ,  C23C14/06 ,  C30B23/02 ,  C30B23/08

CPC classification number: C30B23/02 ,  C23C14/022 ,  C23C14/0647 ,  C30B29/403

Abstract: A novel method of forming large area single crystal cubic boron nitride films on a silicon substrate by first treating the surface of the substrate with atomic hydrogen and then depositing a cubic boron nitride film by a reactive biased laser ablation technique.

Abstract translation: 首先通过原子氢处理衬底的表面，然后通过反应偏置激光烧蚀技术沉积立方氮化硼膜，从而在硅衬底上形成大面积单晶立方氮化硼膜的新方法。

公开(公告)号：US4804490A

公开(公告)日：1989-02-14

申请号：US107318

申请日：1987-10-13

Applicant: Roger W. Pryor ,  Patrick J. Klersy ,  Jerry A. Piontkowski ,  Napolean P. Formigoni

Inventor： Roger W. Pryor ,  Patrick J. Klersy ,  Jerry A. Piontkowski ,  Napolean P. Formigoni

IPC: H01L45/00 ,  H02H9/04 ,  H01L29/12 ,  C23C14/00

CPC classification number: H01L45/04 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1625 ,  H01L45/1641 ,  H02H9/044

Abstract: A method of stabilizing the switching characteristics of a thin film chalcogenide glass material by subjecting said material to a hydrogenated atmosphere, preferably activated hydrogen and argon. It is also preferred to provide a post hydrogenation anneal step.

Abstract translation: 通过使所述材料经受氢化气氛，优选活化的氢和氩来稳定薄膜硫族化物玻璃材料的开关特性的方法。 还优选提供后氢化退火步骤。

公开(公告)号：US06453748B1

公开(公告)日：2002-09-24

申请号：US09464015

申请日：1999-12-15

Applicant: Roger W. Pryor

Inventor： Roger W. Pryor

IPC: G01L906

CPC classification number: G01L9/0042 ,  G01L9/0054

Abstract: A piezoresistive pressure sensor that makes use of n-type boron nitride as the piezoresistive material. The boron nitride enables the sensor to provide suitable performance in hostile environments. The sensor includes a titanium substrate covered with a diamond insulator layer. An n-type boron nitride piezoresistive element is deposited on the diamond layer, and is electrically connected to electrical contacts. The electrical contacts are electrically connected to a resistive measurement system for determining the resistance of the piezoresistive element. In an alternate embodiment, the boron nitride piezoresistive material is used in a micobolometer for a focal plane array.

Abstract translation: 使用n型氮化硼作为压阻材料的压阻式压力传感器。 氮化硼使传感器能够在恶劣的环境中提供合适的性能。 传感器包括覆盖有金刚石绝缘体层的钛基底。 n型氮化硼压阻元件沉积在金刚石层上，并与电触点电连接。 电触点电连接到用于确定压阻元件的电阻的电阻测量系统。 在替代实施例中，氮化硼压阻材料用于焦平面阵列的测微计中。

公开(公告)号：US5646474A

公开(公告)日：1997-07-08

申请号：US411249

申请日：1995-03-27

Applicant: Roger W. Pryor

Inventor： Roger W. Pryor

IPC: C23C14/06 ,  C23C14/28 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J19/24 ,  H01J21/04 ,  H01J1/05

CPC classification number: H01J1/30 ,  C23C14/0647 ,  C23C14/28

Abstract: A cold cathode is formed of n-type boron nitride. The cathode may include a layer of diamond underlying the boron nitride. The cathodes are made by laser ablation or by sputtering. Electronic devices utilizing the boron nitride cathodes are also described.

Abstract translation: 冷阴极由n型氮化硼形成。 阴极可以包括氮化硼下面的金刚石层。 阴极通过激光烧蚀或溅射制成。 还描述了利用氮化硼阴极的电子器件。

公开(公告)号：US5236545A

公开(公告)日：1993-08-17

申请号：US956391

申请日：1992-10-05

Applicant: Roger W. Pryor

Inventor： Roger W. Pryor

IPC: C30B25/02 ,  C30B25/18

CPC classification number: C30B25/18 ,  C30B25/02 ,  C30B29/04

Abstract: A method for preparing heteroepitaxial diamond films on silicon substrates is described. This method first involves the deposition of a cubic boron nitride layer on the silicon substrate as a first interfacial layer using laser ablation with a hexagonal boron nitride target in the presence of a nitrogen-containing atmosphere. The boron nitride layer is followed with a second interfacial layer, generally about 1 to 10 monolayers thick, of hydrogen terminated carbon which is deposited with laser ablation with a carbon target in the presence of atomic hydrogen. Finally, the heteroepitaxial diamond film is deposited using conventional chemical vapor deposition (CVD) techniques with a reactive gas mixture containing hydrogen, a carbon-containing gas or gases, and, optionally, oxygen. Large area, high quality heteroepitaxial diamond films can be prepared by this method. Silicon with such a heteroepitaxial diamond film should be especially suited for the fabrication of high-speed, high-power semiconductor devices at reasonable cost.

Abstract translation: 描述了在硅衬底上制备异质外延金刚石膜的方法。 该方法首先涉及在含氮气氛的情况下，使用具有六方氮化硼靶的激光烧蚀在硅衬底上沉积立方氮化硼层作为第一界面层。 在氮化硼层之后，在原子氢存在下，通过碳靶对激光烧蚀沉积的第二界面层，通常约1至10单层厚的氢封端碳。 最后，使用常规化学气相沉积（CVD）技术沉积异质外延金刚石膜，其中反应性气体混合物含有氢，含碳气体或任选的氧气。 通过该方法可以制备大面积，高质量的异质外延金刚石膜。 具有这种异质外延金刚石膜的硅应特别适用于以合理的成本制造高速大功率半导体器件。

公开(公告)号：US4782340A

公开(公告)日：1988-11-01

申请号：US899442

申请日：1986-08-22

Applicant: Wolodymyr Czubatyj ,  Roger W. Pryor

Inventor： Wolodymyr Czubatyj ,  Roger W. Pryor

IPC: G11C11/407 ,  G11C8/08 ,  H01L21/8229 ,  H01L27/10 ,  H01L27/102 ,  H03K5/02 ,  H03K19/0175 ,  G09G3/34

CPC classification number: G11C8/08 ,  H01L27/10 ,  H03K19/017545 ,  H03K5/023 ,  G11C2211/5614

Abstract: Fully integrated thin film electronic arrays including thin film line driver circuits and address decoding circuits are disclosed. Each line driver employs a two terminal thin film threshold switching device of the type exhibiting a negative resistance characteristic for very high speed, high current operation. The line drivers are particularly useful when driving address lines or other switched conductors in arrays having large capacitive loads or current requirements. The address decoding circuits are constructed from an array of thin film diodes configured as a plurality of AND logic gates, with the output of each AND gate providing the trigger signal to turn on a line driver circuit associated with a particular address line. Thin film structures used to implement the fully integrated arrays include diodes and threshold switches arranged as high density vertical devices in the form of multilayer mesa structures. An electronic memory array having a plurality of vertically arranged cells, with each cell provided with a thin film isolation diode and a thin film memory element, is also disclosed.

Abstract translation: 公开了包括薄膜线路驱动电路和地址解码电路的完全集成的薄膜电子阵列。 每个线路驱动器采用具有负电阻特性的类型的双端子薄膜阈值开关器件，用于非常高速，高电流操作。 当驱动具有大容性负载或电流要求的阵列中的地址线或其他开关导体时，线路驱动器特别有用。 地址解码电路由配置为多个AND逻辑门的薄膜二极管阵列构成，每个与门的输出提供触发信号以接通与特定地址线相关联的线路驱动电路。 用于实现完全集成阵列的薄膜结构包括二极管和阈值开关，其布置为多层台面结构形式的高密度垂直器件。 还公开了具有多个垂直排列的单元的电子存储器阵列，每个单元设置有薄膜隔离二极管和薄膜存储元件。

公开(公告)号：US4410870A

公开(公告)日：1983-10-18

申请号：US364556

申请日：1982-04-01

Applicant: Roger W. Pryor

Inventor： Roger W. Pryor

IPC: G01L1/18 ,  G01L1/22

CPC classification number: G01L1/2293 ,  G01L1/18

Abstract: A semiconductor strain gauge comprises an elastic member having a surface subject to stress; a semiconductor substrate composed of an amorphous semiconducting material secured to the surface of the elastic member; and an electrical connection on the amorphous material for conducting a signal indicative of strain.

Abstract translation: 半导体应变计包括具有受应力的表面的弹性构件; 由非晶半导体材料构成的半导体衬底固定在弹性构件的表面上; 以及在非晶材料上的电连接，用于传导指示应变的信号。

公开(公告)号：US4809044A

公开(公告)日：1989-02-28

申请号：US936553

申请日：1986-11-26

Applicant: Roger W. Pryor ,  Napoleon P. Formigoni ,  Stanford R. Ovshinsky

Inventor： Roger W. Pryor ,  Napoleon P. Formigoni ,  Stanford R. Ovshinsky

IPC: H01L29/861 ,  H01L29/866 ,  H01L45/00 ,  H02H9/04 ,  H01L29/44 ,  H01L29/46 ,  H01L29/86

CPC classification number: H01L45/1233 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1675 ,  H02H9/044

Abstract: Solid-state overvoltage protection devices, preferably formed of deposited thin film, chalcogenide, threshold switching materials, typically include at least one elongated current conduction path through an elongated cross-sectional area of the threshold switching material. The cross-sectional area is formed with a length far exceeding the effective width thereof for distributing the transient current produced by overvoltage conditions over a relatively large area. In this manner, the concentration of localized heating effects can be avoided.

Abstract translation: 优选由沉积的薄膜，硫族化物，阈值开关材料形成的固态过电压保护器件通常包括通过阈值开关材料的细长横截面积的至少一个细长电流传导路径。 横截面积形成有远远超过其有效宽度的长度，用于在相对大的面积上分配由过电压条件产生的瞬态电流。 以这种方式，可以避免局部加热效应的集中。