公开(公告)号：US09290671B1

公开(公告)日：2016-03-22

申请号：US13733428

申请日：2013-01-03

申请人： Oceanit Laboratories, Inc.

发明人： Ashavani Kumar ,  Vinod P. Veedu

IPC分类号： C09D11/30 ,  C09D11/00 ,  C09D11/52 ,  C09D11/02 ,  H01L29/201 ,  H01L29/221 ,  C30B29/52

CPC分类号： C09D11/30 ,  C09D11/00 ,  C09D11/02 ,  C09D11/322 ,  C09D11/52 ,  C30B29/52 ,  H01L29/201 ,  H01L29/221

摘要： Electronic printing devices ink has nanoparticles of semiconducting materials with desired composition, size and band gap and modified with a volatile capping agent. Mercury cadmium telluride is synthesized by refluxing a mixture of metal salt and telluride precursor. Mercury (II) acetate and cadmium (II) acetate are reacted with a tellurium precursor (e.g. tri-n-octylphosphine telluride or telluric acid) in presence of a ligand (e.g. 1-dodecanethiol or oleylamine). This protocol yields nanoparticles of diameter ˜2-1000 nm range. The desired composition of nanoparticles is obtained by varying the relative concentration of the metal precursor. The ink is formulated by modifying the nanoparticles with volatile capping agent and dispersing the modified nanoparticles in a solvent.

摘要翻译： 电子印刷装置油墨具有具有所需组成，尺寸和带隙的半导体材料的纳米颗粒，并用挥发性封端剂改性。 通过回流金属盐和碲化物前体的混合物合成汞碲化镉。 在配体（例如1-十二烷硫醇或油胺）的存在下，乙酸汞（II）和乙酸镉（II）与碲前体（例如三正辛基膦碲化物或碲酸）反应。 该方案产生直径〜2-1000nm范围的纳米颗粒。 通过改变金属前体的相对浓度来获得所需的纳米颗粒组成。 通过用挥发性封端剂改性纳米颗粒并将改性的纳米颗粒分散在溶剂中来配制墨水。

公开(公告)号：US20140299877A1

公开(公告)日：2014-10-09

申请号：US14361150

申请日：2012-11-28

申请人： Yuki Nakamura ,  Naoyuki Ueda ,  Yukiko Abe ,  Yuji SONE ,  Shinji Matsumoto ,  Mikiko Takada ,  Ryoichi Saotome

发明人： Yuki Nakamura ,  Naoyuki Ueda ,  Yukiko Abe ,  Yuji SONE ,  Shinji Matsumoto ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： H01L29/786 ,  H01L29/221 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02628 ,  H01L29/221 ,  H01L29/66969 ,  H01L29/7869

摘要： A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.

摘要翻译： 用于形成金属氧化物薄膜的涂布液包括：无机铟化合物; 无机钙化合物或无机锶化合物，或其二者; 和有机溶剂。

公开(公告)号：US08723175B2

公开(公告)日：2014-05-13

申请号：US13748831

申请日：2013-01-24

申请人： Idemitsu Kosan Co., Ltd.

发明人： Koki Yano ,  Hirokazu Kawashima ,  Kazuyoshi Inoue ,  Shigekazu Tomai ,  Masashi Kasami

IPC分类号： C23C14/00 ,  H01L29/786 ,  H01L29/221

CPC分类号： H01L29/263 ,  C23C14/086 ,  H01L29/7869

摘要： A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8  (1) In/(In+X)=0.29 to 0.99  (2) Zn/(X+Zn)=0.29 to 0.99  (3).

摘要翻译： 一种场效应晶体管，包括：包含含有In，Zn和选自Zr，Hf，Ge，Si，Ti，Mn，W，Mo，V，Cu， （1）〜（3）中的In /（In + Zn）= 0.2〜0.8（1）In /（In） + X）= 0.29〜0.99（2）Zn /（X + Zn）= 0.29〜0.99（3）。

公开(公告)号：US07576365B2

公开(公告)日：2009-08-18

申请号：US10592510

申请日：2005-03-10

申请人： Kazuhiro Mitani ,  Takashi Udagawa ,  Katsuki Kusunoki

发明人： Kazuhiro Mitani ,  Takashi Udagawa ,  Katsuki Kusunoki

IPC分类号： H01L33/00 ,  H01L29/221 ,  H01L29/225

CPC分类号： H01L33/505 ,  H01L33/501 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride semiconductor layer of first conductive type formed on the front surface of the transparent crystal substrate, a second Group III nitride semiconductor layer of second conductive type which is opposite from the first conductive type, a light-emitting layer made of a Group III nitride semiconductor between the first and second Group III nitride semiconductor layers, and a plate body including fluorescent material, attached onto the back surface of the transparent crystal substrate.

摘要翻译： 具有堆叠结构的III族氮化物半导体发光器件包括具有前表面和后表面的透明晶体衬底，形成在透明晶体衬底的前表面上的第一导电类型的第一III族氮化物半导体层， 与第一导电类型相反的第二导电类型的第三III族氮化物半导体层，由第一和第二III族氮化物半导体层之间的III族氮化物半导体制成的发光层和包括荧光材料的板体， 附着在透明晶体基板的背面上。

公开(公告)号：US07294200B2

公开(公告)日：2007-11-13

申请号：US10396831

申请日：2003-03-26

申请人： Hajime Fujikura ,  Kazuyuki Iizuka

发明人： Hajime Fujikura ,  Kazuyuki Iizuka

IPC分类号： C30B23/00 ,  H01L21/00 ,  H01L29/221

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406

摘要： A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semiconductor island structure having a plurality of facets inclined relative to a surface of the substrate using the fine crystal particles as nuclei; and a step (c) for causing the nitride semiconductor island structure to grow in a direction parallel with a surface of the substrate to merge a plurality of the nitride semiconductor island structures with each other, thereby forming a nitride semiconductor crystal layer having a flat surface; the steps (a)-(c) being continuously conducted in the same growing apparatus.

摘要翻译： 一种制造氮化物半导体晶体的方法，其包括步骤（a），（b）和（c），其顺序如下：步骤（a）用于在衬底上形成由氮化物半导体制成的微细晶粒; 用于形成氮化物半导体岛结构的步骤（b），所述氮化物半导体岛结构具有使用所述细晶粒子作为核的相对于所述衬底的表面倾斜的多个面; 以及用于使氮化物半导体岛结构在与衬底的表面平行的方向上生长以使多个氮化物半导体岛结构彼此合并从而形成具有平坦表面的氮化物半导体晶体层的步骤（c） ; 步骤（a） - （c）在相同的生长装置中连续进行。

公开(公告)号：US07042003B2

公开(公告)日：2006-05-09

申请号：US10741441

申请日：2003-12-22

申请人： Eun Joo Jang ,  Sang Sig Kim ,  Kyoung Ah Cho ,  Hyun Suk Kim

发明人： Eun Joo Jang ,  Sang Sig Kim ,  Kyoung Ah Cho ,  Hyun Suk Kim

IPC分类号： H01L29/221 ,  H01L31/0296

CPC分类号： H01L31/0352 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/0296

摘要： A light receiving element, in which nanoparticles obtained by a colloidal synthesis are interconnected so as to serve as a channel for electrons excited by light received by the nanoparticles, thereby improving the performance of the light receiving element and simplifying a process for manufacturing the light receiving element.

摘要翻译： 其中通过胶体合成获得的纳米颗粒相互连接的光接收元件，以便用作由纳米颗粒接收的光激发的电子的通道，从而改善光接收元件的性能并简化制造接收光的过程 元件。

公开(公告)号：US20050051769A1

公开(公告)日：2005-03-10

申请号：US10785067

申请日：2004-02-25

申请人： Eun Jang ,  Shin Jun ,  Hyang Seong

发明人： Eun Jang ,  Shin Jun ,  Hyang Seong

IPC分类号： B82B1/00 ,  B82B3/00 ,  C09C1/10 ,  C09C1/12 ,  C09C1/38 ,  C09K11/00 ,  C09K11/08 ,  C09K11/56 ,  C09K11/62 ,  C09K11/70 ,  C09K11/74 ,  C09K11/88 ,  C09K11/89 ,  C30B7/00 ,  C30B33/00 ,  H01L29/06 ,  H01L29/201 ,  H01L29/221 ,  H05B33/14 ,  H01L29/08 ,  H01L35/24 ,  H01L29/22 ,  H01L51/00

CPC分类号： C01B19/007 ,  B82Y20/00 ,  B82Y30/00 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/64 ,  C09C1/10 ,  C09C1/12 ,  C09C1/38 ,  C09K11/565 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L51/502 ,  H05B33/14 ,  Y10S438/962

摘要： A method for improving the luminescent efficiency of semiconductor nanocrystals by surface treatment with a reducing agent to produce an improvement in luminescent efficiency and quantum efficiency without creating changes in the luminescent characteristics of the nanocrystals such as luminescence wavelengths and the distribution thereof.

摘要翻译： 一种通过用还原剂进行表面处理来提高半导体纳米晶体的发光效率的方法，以提高发光效率和量子效率，而不产生纳米晶体的发光特性如发光波长及其分布的变化。

公开(公告)号：US4779004A

公开(公告)日：1988-10-18

申请号：US81404

申请日：1987-08-04

申请人： Claude E. Tew ,  Adam J. Lewis, Jr.

发明人： Claude E. Tew ,  Adam J. Lewis, Jr.

IPC分类号： H01L21/465 ,  H01L21/471 ,  H01L21/473 ,  H01L21/60 ,  H01L27/146 ,  H01L29/221 ,  H04N5/33 ,  H01J40/14

CPC分类号： H01L21/76897 ,  H01L21/465 ,  H01L21/471 ,  H01L21/473 ,  H01L27/14601 ,  H01L27/14649 ,  H01L29/221 ,  H04N5/33

摘要： An infrared imager, wherein a transparent gate 14 is separated from a very narrow bandgap semiconductor 106 (such as HgCdTe) by a thin dielectric 15, 62. The gate 14 is biased to create a depletion well in the semiconductor 106, and photo-generated carriers are collected in the well. The gate voltage is sensed to measure the accumulated charge. Preferably the accumulated charge is not sensed directly from the gate, but the gate output is repeatedly averaged with another capacitor, so that the output of the imager is sensed as in average over a number of read cycles, which provides a greatly improved signal-to-noise ratio. Preferably an array of the MIS detection devices is formed in a thin layer of HgCdTe 106, which is bonded to a silicon substrate 107 containing a corresponding array of the averaging capacitors with addressing and output connections, and via holes 16 through the HgCdTe are used to connect each detection device to its corresponding averaging capacitor.

摘要翻译： 一种红外成像器，其中透明栅极14由薄电介质15,62与非常窄的带隙半导体106（例如HgCdTe）分离。栅极14被偏置以在半导体106中产生耗尽阱，并且产生光生 载体被收集在井中。 感测栅极电压以测量累积的电荷。 优选地，不直接从栅极感测累积的电荷，而是使栅极输出与另一个电容器重复平均，使得成像器的输出在多个读取周期中被平均地感测，这提供了大大改善的信号 - 比例。 优选地，MIS检测装置的阵列形成在HgCdTe 106的薄层中，其被结合到含有具有寻址和输出连接的平均电容器的相应阵列的硅衬底107，并且通过HgCdTe的通孔16被用于 将每个检测装置连接到其对应的平均电容器。

公开(公告)号：US4766084A

公开(公告)日：1988-08-23

申请号：US97616

申请日：1987-09-16

申请人： Cecile Bory ,  Jean-Louis O. Buffet ,  Guy Parat

发明人： Cecile Bory ,  Jean-Louis O. Buffet ,  Guy Parat

IPC分类号： H01L21/425 ,  H01L21/441 ,  H01L29/221 ,  H01L31/0296 ,  H01L31/103 ,  H01L31/18 ,  H01L21/44

CPC分类号： H01L21/425 ,  H01L21/441 ,  H01L29/221 ,  H01L31/02966 ,  H01L31/1032

摘要： The invention relates to a process for producing an electric contact on a HgCdTe substrate having a P conductivity and application to the production of an N/P diode. For producing an N/P diode, an insulating layer deposited on the HgCdTe substrate is etched by ion bombardment through a first mask, so as to produce a first opening in said insulating layer. The mask is removed and the substrate covered by the insulating layer undergoes a heat treatment, so as to at least mitigate the P conductivity drop induced by the ion bombardment in a first portion of the substrate facing the first opening. This is followed by ion implantation in a second portion of the substrate through a second mask in order to produce an N conductivity portion. This second mask is removed and the insulating layer is etched through a third mask by ion bombardment in order to produce a second opening facing the second portion. After removing the third mask, conductive pads are produced in the first and second openings.

摘要翻译： 本发明涉及一种在具有P电导率的HgCdTe衬底上制造电接触的方法，并且用于生产N / P二极管。 为了制造N / P二极管，通过第一掩模的离子轰击蚀刻沉积在HgCdTe衬底上的绝缘层，以便在所述绝缘层中产生第一开口。 去除掩模，并且由绝缘层覆盖的衬底进行热处理，以便至少减轻由面对第一开口的衬底的第一部分中的离子轰击引起的P电导率下降。 然后通过第二掩模在衬底的第二部分中离子注入以产生N导电部分。 去除该第二掩模，并且通过离子轰击通过第三掩模蚀刻绝缘层，以便产生面向第二部分的第二开口。 在去除第三掩模之后，在第一和第二开口中产生导电焊盘。

公开(公告)号：US4600469A

公开(公告)日：1986-07-15

申请号：US684894

申请日：1984-12-21

申请人： Albert J. Fusco ,  Bruce C. Cochran

发明人： Albert J. Fusco ,  Bruce C. Cochran

IPC分类号： B24B37/00 ,  H01L21/461 ,  H01L29/221 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/461 ,  H01L29/221

摘要： A method for chemically-mechanically polishing detector material such as mercury cadmium telluride (HgCdTe) to obtain damage free surfaces. The polishing system includes a potassium-iodine iodide in a deionized water base, in combination with an inert lubricant, such as ethylene glycol, and a semisoft porous polishing pad made from, for example, an expanded polyurethane material.

摘要翻译： 一种化学机械抛光检测器材料如汞镉镉（HgCdTe）的方法，以获得无损伤表面。 抛光系统包括去离子水基中的碘化碘化钾，与惰性润滑剂如乙二醇组合，以及由例如发泡聚氨酯材料制成的半柔性多孔抛光垫。