公开(公告)号：US06989287B2

公开(公告)日：2006-01-24

申请号：US10875101

申请日：2004-06-24

申请人： Hajime Fujikura ,  Kazuyuki Iizuka

发明人： Hajime Fujikura ,  Kazuyuki Iizuka

IPC分类号： H01L21/00 ,  H01L21/338

CPC分类号： H01L21/02458 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02661

摘要： A method for producing a nitride semiconductor comprising growing at least first to third nitride semiconductor layers on a substrate; said first nitride semiconductor layer being grown at 400–600° C.; and said second and third nitride semiconductor layers being grown on said first nitride semiconductor layer at 700–1,300° C. after heat-treating said first nitride semiconductor layer at 700–1,300° C.; used as a carrier gas supplied near said substrate together with a starting material gas being a hydrogen/nitrogen mixture gas containing 63% or more by volume of hydrogen during growing said second nitride semiconductor layer, and a hydrogen/nitrogen mixture gas containing 50% or more by volume of nitrogen during growing said third nitride semiconductor layer; and said second nitride semiconductor layer being formed to a thickness of more than 1 μm.

摘要翻译： 一种生产氮化物半导体的方法，包括在衬底上生长至少第一至第三氮化物半导体层; 所述第一氮化物半导体层在400-600℃下生长。 并且所述第二和第三氮化物半导体层在700-1,300℃热处理所述第一氮化物半导体层之后在700-1300℃下在所述第一氮化物半导体层上生长。 在生长所述第二氮化物半导体层期间用作在所述衬底附近供应的载气和起始原料气体，所述原料气体是含有63体积％或更多体积氢气的氢/氮混合气体，以及含有50％或 在生长所述第三氮化物半导体层期间更多的氮的体积; 并且所述第二氮化物半导体层形成为大于1μm的厚度。

公开(公告)号：US20050042789A1

公开(公告)日：2005-02-24

申请号：US10875101

申请日：2004-06-24

申请人： Hajime Fujikura ,  Kazuyuki Iizuka

发明人： Hajime Fujikura ,  Kazuyuki Iizuka

IPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32 ,  H01L21/00

CPC分类号： H01L21/02458 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02661

摘要： A method for producing a nitride semiconductor comprising growing at least first to third nitride semiconductor layers on a substrate; said first nitride semiconductor layer being grown at 400-600° C.; and said second and third nitride semiconductor layers being grown on said first nitride semiconductor layer at 700-1,300° C. after heat-treating said first nitride semiconductor layer at 700-1,300° C.; used as a carrier gas supplied near said substrate together with a starting material gas being a hydrogen/nitrogen mixture gas containing 63% or more by volume of hydrogen during growing said second nitride semiconductor layer, and a hydrogen/nitrogen mixture gas containing 50% or more by volume of nitrogen during growing said third nitride semiconductor layer; and said second nitride semiconductor layer being formed to a thickness of more than 1 μm.

摘要翻译： 一种生产氮化物半导体的方法，包括在衬底上生长至少第一至第三氮化物半导体层; 所述第一氮化物半导体层在400-600℃下生长。 并且所述第二和第三氮化物半导体层在700-1,300℃热处理所述第一氮化物半导体层之后在700-1300℃下在所述第一氮化物半导体层上生长。 在生长所述第二氮化物半导体层期间用作在所述衬底附近供应的载气和起始原料气体，所述原料气体是含有63体积％或更多体积氢气的氢/氮混合气体，以及含有50％或 在生长所述第三氮化物半导体层期间更多的氮的体积; 并且所述第二氮化物半导体层形成为大于1μm的厚度。

公开(公告)号：US07294200B2

公开(公告)日：2007-11-13

申请号：US10396831

申请日：2003-03-26

申请人： Hajime Fujikura ,  Kazuyuki Iizuka

发明人： Hajime Fujikura ,  Kazuyuki Iizuka

IPC分类号： C30B23/00 ,  H01L21/00 ,  H01L29/221

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406

摘要： A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semiconductor island structure having a plurality of facets inclined relative to a surface of the substrate using the fine crystal particles as nuclei; and a step (c) for causing the nitride semiconductor island structure to grow in a direction parallel with a surface of the substrate to merge a plurality of the nitride semiconductor island structures with each other, thereby forming a nitride semiconductor crystal layer having a flat surface; the steps (a)-(c) being continuously conducted in the same growing apparatus.

摘要翻译： 一种制造氮化物半导体晶体的方法，其包括步骤（a），（b）和（c），其顺序如下：步骤（a）用于在衬底上形成由氮化物半导体制成的微细晶粒; 用于形成氮化物半导体岛结构的步骤（b），所述氮化物半导体岛结构具有使用所述细晶粒子作为核的相对于所述衬底的表面倾斜的多个面; 以及用于使氮化物半导体岛结构在与衬底的表面平行的方向上生长以使多个氮化物半导体岛结构彼此合并从而形成具有平坦表面的氮化物半导体晶体层的步骤（c） ; 步骤（a） - （c）在相同的生长装置中连续进行。

公开(公告)号：US08026523B2

公开(公告)日：2011-09-27

申请号：US12285799

申请日：2008-10-14

申请人： Hajime Fujikura

发明人： Hajime Fujikura

IPC分类号： H01L29/15

CPC分类号： H01L33/0075 ,  C30B25/18 ,  C30B29/406

摘要： A nitride semiconductor free-standing substrate includes a surface inclined in a range of 0.03° to 1.0° from a C-plane, and an off-orientation that an angle defined between a C-axis and a tangent at each point on a whole surface of the substrate becomes maximum is displaced in a range of 0.5° to 16° from a particular M-axis orientation of six-fold symmetry M-axis orientations. The substrate does not include a region of −0.5°

摘要翻译： 氮化物半导体自支撑衬底包括从C面倾斜0.03°至1.0°的范围的表面和在整个表面上的每个点处的C轴和切线之间限定的角度的偏离方向 的基板变得最大，从六对称M轴取向的特定M轴取向在0.5°至16°的范围内移位。 衬底不包括表面上为-0.5°<+ ph> <+ 0.5°的区域， 表示从特定M轴取向在基板的表面上的偏离取向的位移角。

公开(公告)号：US20110108944A1

公开(公告)日：2011-05-12

申请号：US12591423

申请日：2009-11-19

申请人： Hajime Fujikura

发明人： Hajime Fujikura

IPC分类号： H01L29/12 ,  H01L21/04

CPC分类号： H01L21/0242 ,  C30B29/403 ,  C30B33/02 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/02664 ,  H01L33/0075 ,  H01S5/32341 ,  H01S2304/12

摘要： A nitride semiconductor free-standing substrate includes a diameter of not less than 40 mm, a thickness of not less than 100 μm, a dislocation density of not more than 5×106/cm2, an impurity concentration of not more than 4×1019/cm3, and a nanoindentation hardness of not less than 19.0 GPa at a maximum load in a range of not less than 1 mN and not more than 50 mN.

摘要翻译： 氮化物半导体自支撑衬底包括直径不小于40mm，厚度不小于100μm，位错密度不大于5×10 6 / cm 2，杂质浓度不大于4×1019 / cm3，纳米压痕硬度在不小于1mN且不大于50mN的范围内的最大负载下不小于19.0GPa。

公开(公告)号：US08786052B2

公开(公告)日：2014-07-22

申请号：US13610496

申请日：2012-09-11

申请人： Hajime Fujikura ,  Taichiroo Konno ,  Yuichi Oshima

发明人： Hajime Fujikura ,  Taichiroo Konno ,  Yuichi Oshima

IPC分类号： H01L29/20 ,  H01L29/04

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B25/16 ,  C30B25/165 ,  C30B29/406 ,  H01L29/2003

摘要： A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

摘要翻译： 氮化物半导体晶体制造方法，氮化物半导体外延晶片和氮化物半导体独立基板，可以抑制氮化物半导体晶体中的裂纹的发生，并且确保提高氮化物半导体晶体的产率。 氮化物半导体晶体制造方法包括在氮化物半导体晶体生长期间，在晶种基板上生长氮化物半导体晶体，同时在晶种基板的外端施加蚀刻作用。

公开(公告)号：US08664123B2

公开(公告)日：2014-03-04

申请号：US13489570

申请日：2012-06-06

申请人： Hajime Fujikura

发明人： Hajime Fujikura

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02019 ,  H01L21/302 ,  H01L21/30621 ,  H01L21/68764 ,  H01L21/68771

摘要： There is provided a method for manufacturing a nitride semiconductor substrate, comprising: etching and flattening a surface of a nitride semiconductor substrate disposed facing a surface plate, by using the surface plate having a surface composed of any one of Ni, Ti, Cr, W, and Mo or nitride of any one of them, disposing the surface of the surface plate and a flattening surface of a nitride semiconductor substrate proximately so as to be faced each other, and supplying gas containing at least hydrogen and ammonia between the surface of the surface plate and the surface of the nitride semiconductor substrate, wherein the surface plate and the nitride semiconductor substrate facing each other are set in a high temperature state of 900° C. or more.

摘要翻译： 提供了一种用于制造氮化物半导体衬底的方法，包括：通过使用具有由Ni，Ti，Cr，W中的任一种构成的表面的表面板来蚀刻和平坦化面对面板的氮化物半导体衬底的表面 ，以及其中任何一个的Mo或氮化物，将表面板的表面和氮化物半导体衬底的平坦化表面近似设置成彼此面对，并且在该表面之间提供至少包含氢和氨的气体 表面板和氮化物半导体衬底的表面，其中彼此面对的表面板和氮化物半导体衬底被设定在900℃以上的高温状态。

公开(公告)号：US20130069075A1

公开(公告)日：2013-03-21

申请号：US13610496

申请日：2012-09-11

申请人： Hajime Fujikura ,  Taichiroo Konno ,  Yuichi Oshima

发明人： Hajime Fujikura ,  Taichiroo Konno ,  Yuichi Oshima

IPC分类号： C30B25/16 ,  C30B25/14 ,  H01L29/20

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B25/16 ,  C30B25/165 ,  C30B29/406 ,  H01L29/2003

摘要： A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

摘要翻译： 氮化物半导体晶体制造方法，氮化物半导体外延晶片和氮化物半导体独立基板，可以抑制氮化物半导体晶体中的裂纹的发生，并且确保提高氮化物半导体晶体的产率。 氮化物半导体晶体制造方法包括在氮化物半导体晶体生长期间，在晶种基板上生长氮化物半导体晶体，同时在晶种基板的外端施加蚀刻作用。

公开(公告)号：US20110006397A1

公开(公告)日：2011-01-13

申请号：US12801214

申请日：2010-05-27

申请人： Hajime Fujikura ,  Takeshi Eri

发明人： Hajime Fujikura ,  Takeshi Eri

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/183 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L33/0075

摘要： A group III nitride semiconductor free-standing substrate includes an as-grown surface, more than half of a region of the as-grown surface including a single crystal plane. The single crystal plane includes an off-angle inclined in an m-axis or a-axis direction from a C-plane with a group III polarity, or in a c-axis or a-axis direction from an M-plane.

摘要翻译： III族氮化物半导体自立式衬底包括生长表面，包括单晶平面的生长表面的一半以上区域的一半以上。 单晶面包括从具有III族极性的C面或从M面向c轴或a轴方向以m轴或a轴方向倾斜的偏角。

公开(公告)号：US20070262293A1

公开(公告)日：2007-11-15

申请号：US11717052

申请日：2007-03-13

申请人： Hajime Fujikura

发明人： Hajime Fujikura

IPC分类号： H01L29/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： A n-type layer, a multiquantum well active layer comprising a plurality of pairs of an InGaN well layer/InGaN barrier layer, and a p-type layer are laminated on a substrate to provide a nitride semiconductor light emitting element. A composition of the InGaN barrier included in the multiquantum well active layer is expressed by InxGa1-xN (0.04≦x≦0.1), and a total thickness of InGaN layers comprising an In composition ratio within a range of 0.04 to 0.1 in the light emitting element including the InGaN barrier layers is not greater than 60 nm.

摘要翻译： 包括多对InGaN阱层/ InGaN阻挡层和p型层的n型层，多量子阱有源层层叠在基板上，以提供氮化物半导体发光元件。 包括在多量子阱有源层中的InGaN势垒的组成由In x Ga 1-x N（0.04 <= x <= 0.1）表示，并且总共 在包含InGaN势垒层的发光元件中，In组成比在0.04〜0.1的范围内的InGaN层的厚度不大于60nm。