公开(公告)号：US20230307079A1

公开(公告)日：2023-09-28

申请号：US18295445

申请日：2023-04-04

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt

IPC: G11C29/42 ,  G11C29/12 ,  G11C29/18 ,  G11C29/44 ,  G06F11/10

CPC classification number: G11C29/42 ,  G11C29/1201 ,  G11C29/18 ,  G11C29/4401 ,  G06F11/1012 ,  G06F11/1016 ,  G06F11/1032 ,  G06F11/1048

Abstract: A memory controller generates error codes associates with write data and a write address and provides the error codes over a dedicated error detection code link to a memory device during a write operation. The memory device performs error detection, and in some cases correction, on the received write data and write address based on the error codes. If no uncorrectable errors are detected, the memory device furthermore stores the error codes in association with the write data. On a read operation, the memory device outputs the error codes over the error detection code link to the memory controller together with the read data. The memory controller performs error detection, and in some cases correction, on the received read data based on the error codes.

公开(公告)号：US20230307026A1

公开(公告)日：2023-09-28

申请号：US18094908

申请日：2023-01-09

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  John Eric Linstadt

IPC: G11C11/00 ,  G11C5/04 ,  G11C5/06 ,  G06F3/06 ,  G06F11/10 ,  G11C7/10 ,  G11C7/12

CPC classification number: G11C11/005 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0673 ,  G06F11/1004 ,  G06F11/1076 ,  G11C5/04 ,  G11C5/063 ,  G11C7/1057 ,  G11C7/1078 ,  G11C7/12

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a memory controller via a bus. The module includes at least two non-volatile memory devices, and a buffer disposed between the pin interface and the at least two non-volatile memory devices. The buffer receives non-volatile memory access commands from the memory controller that are interleaved with DRAM memory module access commands.

公开(公告)号：US20230305974A1

公开(公告)日：2023-09-28

申请号：US18295143

申请日：2023-04-03

Applicant: Rambus Inc.

Inventor： John Eric Linstadt

IPC: G06F13/16 ,  G06F12/06 ,  G11C7/10 ,  G11C7/20 ,  G11C7/22 ,  G06F12/02

CPC classification number: G06F13/1694 ,  G06F12/0623 ,  G11C7/10 ,  G11C7/1045 ,  G11C7/20 ,  G11C7/22 ,  G06F12/0246 ,  G06F12/0646 ,  G06F13/1678 ,  G06F2212/7206

Abstract: A memory controller interfaces with one or more memory devices having configurable width data buses and configurable connectivity between data pins of the memory devices and data pins of the memory controller. Upon initialization of the memory devices, the memory controller automatically discovers the connectivity configuration of the one or more memory devices, including both individually selected and jointly selected devices. After discovering connectivity of the connected devices, the memory controller configures the memory devices according to the discovered connectivity and assigns unique addresses to jointly selected devices.

公开(公告)号：US11636915B2

公开(公告)日：2023-04-25

申请号：US17746674

申请日：2022-05-17

Applicant: Rambus Inc.

Inventor： John Eric Linstadt ,  Frederick A. Ware

IPC: G11C29/42 ,  G11C8/18 ,  G11C29/18 ,  G11C29/44

Abstract: A memory component and a controller communicate commands and data with each other The commands to activate and then access data, and the data itself, are all communicated between a controller and the memory component at different times. The controller and memory component each calculate a respective error detecting code (EDC) values on the activate command information (e.g., bank address and row address) and store them indexed by the bank address. When the memory component is accessed, retrieved EDC values are combined with EDC values calculated from the access command information, and the data itself. The memory component transmits its combined EDC value to the controller for checking.

公开(公告)号：US20220415428A1

公开(公告)日：2022-12-29

申请号：US17840765

申请日：2022-06-15

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt

IPC: G11C29/42 ,  G11C29/12 ,  G11C29/18 ,  G11C29/44 ,  G06F11/10

Abstract: A memory controller generates error codes associates with write data and a write address and provides the error codes over a dedicated error detection code link to a memory device during a write operation. The memory device performs error detection, and in some cases correction, on the received write data and write address based on the error codes. If no uncorrectable errors are detected, the memory device furthermore stores the error codes in association with the write data. On a read operation, the memory device outputs the error codes over the error detection code link to the memory controller together with the read data. The memory controller performs error detection, and in some cases correction, on the received read data based on the error codes.

公开(公告)号：US20220342783A1

公开(公告)日：2022-10-27

申请号：US17744347

申请日：2022-05-13

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Brent S. Haukness ,  John Eric Linstadt ,  Scott C. Best

IPC: G06F11/20 ,  G11C11/4093 ,  G11C29/52

Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.

公开(公告)号：US20220319578A1

公开(公告)日：2022-10-06

申请号：US17715370

申请日：2022-04-07

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Zhichao Lu ,  Kenneth Lee Wright

IPC: G11C11/4091 ,  G06F11/10 ,  G11C11/4076

Abstract: Memory devices, controllers and associated methods are disclosed. In one embodiment, a memory device is disclosed. The memory device includes storage cells that are each formed with a metal-oxide-semiconductor (MOS) transistor having a floating body. Data is stored as charge in the floating body. A transfer interface receives a read command to access data stored in a first group of the storage cells. Sensing circuitry detects the data stored in the first group of storage cells. The transfer interface selectively performs a writeback operation of the sensed data associated with the read command.

公开(公告)号：US20220171721A1

公开(公告)日：2022-06-02

申请号：US17548510

申请日：2021-12-11

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Kenneth L. Wright ,  John Eric Linstadt ,  Craig Hampel

IPC: G06F13/16 ,  G06F12/0868 ,  G06F12/0888 ,  G11C7/10 ,  G06F3/06 ,  G06F11/10 ,  G06F12/0895 ,  G06F13/28 ,  G11C29/52

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a bus. The bus has a first width. The module includes at least one storage class memory (SCM) component and at least one DRAM component. The memory module operates in a first mode that utilizes all of the first width, and in a second mode that utilizes less than all of the first width.

公开(公告)号：US11341070B2

公开(公告)日：2022-05-24

申请号：US17100560

申请日：2020-11-20

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  John Eric Linstadt ,  Thomas J. Giovannini ,  Kenneth L. Wright

IPC: G06F13/28 ,  G06F13/16 ,  G11C5/04 ,  G11C7/10 ,  G11C7/22 ,  G11C29/02 ,  G11C5/02

Abstract: The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.

公开(公告)号：US20220130745A1

公开(公告)日：2022-04-28

申请号：US17499712

申请日：2021-10-12

Applicant: Rambus Inc.

Inventor： Mark D. Kellam ,  John Eric Linstadt

IPC: H01L23/498

Abstract: The embodiments are directed to technologies for variable pitch vertical interconnect design for scalable escape routing in semiconductor devices. One semiconductor device includes a circuit die, and an array of circuit die interconnects located on the circuit die. The array includes a first triangular octant of interconnects that are organized in rows and columns, each column incrementing its number of interconnects from a first side of the first triangular octant to a second side of the first triangular octant. A pitch size between the columns increases in a first repeating pattern from the first side to the second side.