Abstract:
An integrated silicon optical device is capable of being monitored and tuned in real-time. The integrated silicon optical device includes: a bus waveguide, comprising an input port and an output port; an optical microresonator coupled to the bus waveguide, configured to selectively receive light at a desired resonance wavelength from the bus waveguide; a photodetector, configured to electrically read out an operation condition of the optical microresonator; a diode-tuner, configured to blueshift or redshift the resonance wavelength of the optical microresonator; a micro-heater, configured to redshift the resonance wavelength of the optical microresonator; and a control unit, comprising a transimpedance amplifier (TIA) and a microprocessor, configured to implement a two-stage closed-loop tuning scheme.
Abstract:
A light detecting device is provided, comprising a substrate having a patterned metal layer formed thereon; a dielectric layer formed on the substrate, first pixel element formed on the dielectric layer, and a second pixel element. The dielectric layer at least has a first trench, and the first trench is positioned below the level of the first pixel element. The second pixel element comprises a buried portion formed correspondingly to the first trench, and an upper portion formed on the buried portion. The upper portion of the second pixel element is positioned at the same level of the first pixel element.
Abstract:
A detector structure having a sensor for detecting energy impinging on the structure in the infrared and/or optical frequency band; an electronics section disposed behind the sensor for processing electrical signal produced by the sensor in response to the sensor detecting the infrared and/or optical energy; and an electrically conductive layer for inhibiting electromagnetic energy outside of the visible and infrared portions of the spectrum, such electrically conductive layer being disposed between impinging energy and the electronics section, such layer having a transmissivity greater than 90 percent in the visible and infrared portions of the spectrum and being reflective and/or dissipative to portions of the impinging energy outside of the visible and infrared portions of the spectrum. In one embodiment an electrically conductive layer having a substantially constant absorptivity to electromagnetic energy within the visible and infrared portions of the spectrum. In one embodiment, the layer is graphene.
Abstract:
In a sensing device and a method for sending a light by using the same, the sensing device includes: a lower panel; an upper panel facing the lower panel; a liquid crystal layer disposed between the lower panel and the upper panel; an infrared ray sensor formed in at least one of the lower panel and the upper panel; and a visible ray sensor formed in at least one of the lower panel and the upper panel. The sensing device simultaneously includes the infrared ray sensor and the visible ray sensor such that a touch sensing function or an image sensing function having high reliability may be realized.
Abstract:
A method of producing a solid-state imaging device includes the steps of forming on a substrate a photoelectric conversion portion that receives light on a light-receiving surface and that photoelectrically converts the received light to generate a signal charge, forming above the light-receiving surface an optical waveguide that guides light to the light-receiving surface, and forming above the optical waveguide a color filter which colors light and from which colored light is emitted to the optical waveguide, wherein, in forming the color filter, the color filter is formed from a photosensitive resin film containing a dye by performing an exposure process and then performing a development process on the film, and in forming the optical waveguide, a core portion of the optical waveguide is formed so that the core portion absorbs exposure light radiated onto the photosensitive resin film when the exposure process is performed.
Abstract:
A photoelectric conversion device includes a circuit board, light-emitting modules, light-receiving modules, an optical coupling module, and a protecting member. The light-emitting modules and the light-receiving modules are mounted on the circuit board. The optical coupling module is mounted on the circuit board, and includes first and second optical surfaces, a reflection surface, first converging lenses formed on the first optical surface and corresponding to the light-emitting modules and the light-receiving modules, and second converging lenses formed on the second optical surface and corresponding to the first converging lenses. The protecting member is mounted on the circuit board to shield the optical coupling module, the light-emitting modules, and the light-receiving modules, and only exposes the second converging lenses.
Abstract:
A wafer includes multiple optical devices that each includes one or more optical components. The optical components include light-generating components that each generates a light signal in response to application of electrical energy to the light-generating component from electronics that are external to the wafer. The optical components also include receiver components that each outputs an electrical signal in response to receipt of light. The wafer also includes testing waveguides that each extends from within a boundary of one of the optical devices across the boundary of the optical device and also provides optical communication between a first portion of the optical components and a second portion of the optical components. The first portion of the optical components includes one or more of the light-generating components and the second portion of the optical components include one or more of the receiver components.
Abstract:
An integrated silicon optical device is capable of being monitored and tuned in real-time. The integrated silicon optical device includes: a bus waveguide, comprising an input port and an output port; an optical microresonator coupled to the bus waveguide, configured to selectively receive light at a desired resonance wavelength from the bus waveguide; a photodetector, configured to electrically read out an operation condition of the optical microresonator; a diode-tuner, configured to blueshift or redshift the resonance wavelength of the optical microresonator; a micro-heater, configured to redshift the resonance wavelength of the optical microresonator; and a control unit, comprising a transimpedance amplifier (TIA) and a microprocessor, configured to implement a two-stage closed-loop tuning scheme.
Abstract:
The monitoring of UV radiation has received increased attention recently due to the hazards of accelerated skin ageing and even cancer following excessive exposure. Personalized monitoring gives a more accurate reading than crude weather forecasts of the ‘UV index’. This invention answers both these needs in a personal UV monitor that is incorporated into an existing display. Minimal processing changes are made to an existing display in order to achieve this added functionality, which is therefore achieved at little additional cost.
Abstract:
A radiation sensor includes first and second pixels with a radiation absorption filter positioned over the first pixel and an interference filter positioned over both the first and second pixels. The combined spectral response of the absorption filter and the first pixel has a first pixel pass-band and a first pixel stop-band. The spectral response of the interference filter has an interference filter pass-band which is substantially within the first pixel pass-band for radiation incident on the interference filter at a first angle of incidence, and substantially within the first pixel stop-band for radiation incident on the interference filter at a second angle of incidence greater than the first angle of incidence.