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    Ice supply device
    202.
    发明授权
    Ice supply device 有权
    供冰装置

    公开(公告)号：US07836719B2

    公开(公告)日：2010-11-23

    申请号：US11951415

    申请日：2007-12-06

    Applicant: Kyung Han Jeong ,  Wook Yong Lee

    Inventor： Kyung Han Jeong ,  Wook Yong Lee

    IPC: A23G9/00 ,  B02C18/14 ,  B67D7/80

    CPC classification number: F25C5/046 ,  F25C2400/08 ,  F25C2400/10

    Abstract: An ice supply device is capable of supplying cubed ice, sliced ice, and grinded ice. The ice supply device is configured to supply cubed ice, sliced ice, or grinded ice based on a speed and direction of rotation of a rotary blade included in the ice supply device.

    Abstract translation: 供冰装置能够供应立方冰，切片冰和研磨的冰。 冰供应装置被配置为基于包括在供冰装置中的旋转叶片的旋转速度和旋转方向来供应立方冰，切片冰或磨碎的冰。

    METHOD FOR STORING CONVERSATION UPON USER'S REQUEST IN CPM SYSTEM, AND SYSTEM THEREOF
    203.
    发明申请
    METHOD FOR STORING CONVERSATION UPON USER'S REQUEST IN CPM SYSTEM, AND SYSTEM THEREOF 有权
    用于在CPM系统中存储用户请求的方法及其系统

    公开(公告)号：US20100293240A1

    公开(公告)日：2010-11-18

    申请号：US12781534

    申请日：2010-05-17

    Applicant: Seung-Yong LEE ,  Kyung-Tak Lee ,  Sung-Jin Park

    Inventor： Seung-Yong LEE ,  Kyung-Tak Lee ,  Sung-Jin Park

    IPC: G06F15/16

    CPC classification number: H04L51/046 ,  H04L12/1827 ,  H04L51/04 ,  H04L65/1006 ,  H04L65/1069 ,  H04L65/1093 ,  H04L65/403 ,  H04L67/1097 ,  H04M3/42221

    Abstract: A method for storing a conversation upon a user's real-time request in a Converged-IP Messaging (CPM) service is provided. The method includes storing a conversation in a message storage server on a network or stopping the storage of the conversation upon a user's request. A target that can be stored within a conversation includes a pager mode message, a large message, and media delivered through the session. In this manner, media in the conversation may be limited to media selected by a user.

    Abstract translation: 提供了一种用于在融合IP消息（CPM）服务中存储用户实时请求的会话的方法。 该方法包括将会话存储在网络上的消息存储服务器中，或者根据用户的请求停止会话的存储。 可以存储在会话中的目标包括寻呼机模式消息，大消息和通过会话传递的媒体。 以这种方式，会话中的媒体可以限于用户选择的媒体。

    GROUNDWATER RADON REDUCTION APPARATUS
    204.
    发明申请
    GROUNDWATER RADON REDUCTION APPARATUS 有权
    地下水雷达减少装置

    公开(公告)号：US20100282086A1

    公开(公告)日：2010-11-11

    申请号：US12638425

    申请日：2009-12-15

    Applicant: Kil Yong LEE ,  Yoon Yeol Yoon ,  Kyung Seok Ko

    Inventor： Kil Yong LEE ,  Yoon Yeol Yoon ,  Kyung Seok Ko

    IPC: B01D19/00

    CPC classification number: C02F1/20 ,  B01D19/0026 ,  B01D19/0063 ,  C02F2101/006 ,  C02F2103/06

    Abstract: A groundwater radon reduction apparatus is provided. The groundwater radon reduction apparatus includes: a housing in which groundwater falls down; a rotating member installed in the housing and rotated by a falling force of the groundwater to form the groundwater into water drops; a plurality of power transmission members connected to both ends of the rotating member to transmit power, and receiving the rotating force of the rotating member; and a plurality of ventilation units coupled to one ends of the power transmission members inside the housing, respectively, and rotated together with the power transmission members by the rotation force of the rotating member to discharge radon gases within the water drops to the outside.

    Abstract translation: 提供地下水氡还原装置。 地下水氡气还原装置包括：地下水落下的壳体; 旋转构件安装在壳体中并通过地下水的下落力旋转以形成地下水; 多个动力传递构件，其连接到所述旋转构件的两端以传递动力，并且接收所述旋转构件的旋转力; 以及多个通风单元，其分别与所述壳体内的所述动力传递构件的一端连接，并且通过所述旋转构件的旋转力与所述动力传递构件一起旋转，以将水滴内的氡气排出到外部。

    Thin film transistor and method of fabricating the same
    207.
    发明授权
    Thin film transistor and method of fabricating the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US07815734B2

    公开(公告)日：2010-10-19

    申请号：US11457491

    申请日：2006-07-14

    Applicant: Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Ki-Yong Lee

    Inventor： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Ki-Yong Lee

    IPC: H01L21/04 ,  C30B25/12

    CPC classification number: H01L29/66757 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78675

    Abstract: Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties.

    Abstract translation: 本发明提供一种薄膜晶体管及其制造方法，其中在基板上形成非晶硅层，在非晶硅层上形成包含不同浓度的金属催化剂的覆盖层 图案化以形成覆盖层图案，并且使非晶硅层结晶化，使得在非晶硅层和覆盖层图案之间的界面处形成的晶种的密度和位置受到控制，从而提高了非晶硅层的尺寸和均匀性 晶粒，并且其中通过一次结晶工艺在期望的位置选择性地形成所需尺寸和均匀性的多晶硅，导致具有优异和期望性能的薄膜晶体管。

    METHOD FOR APPLYING AMPLITUTE USE TO DIGITAL AMPLYFIER WITH VARIABLE BIT RESOLUTION OR CLOCK FREQUENCY AND APPARATUS FOR EXECUTING THE METHOD
    209.
    发明申请
    METHOD FOR APPLYING AMPLITUTE USE TO DIGITAL AMPLYFIER WITH VARIABLE BIT RESOLUTION OR CLOCK FREQUENCY AND APPARATUS FOR EXECUTING THE METHOD 有权
    适用于具有可变位分辨率或时钟频率的数字放大器的广泛使用的方法和用于执行方法的装置

    公开(公告)号：US20100233967A1

    公开(公告)日：2010-09-16

    申请号：US12675452

    申请日：2008-08-01

    Applicant: Kyeong-pyo Kim ,  Woo Yong Lee ,  Jin Kyeong Kim ,  Yong Sun Kim ,  Hyoung Jin Kwon

    Inventor： Kyeong-pyo Kim ,  Woo Yong Lee ,  Jin Kyeong Kim ,  Yong Sun Kim ,  Hyoung Jin Kwon

    IPC: H04B7/005 ,  H04B17/00

    CPC classification number: H04L1/0023 ,  H04L1/0003 ,  H04L1/0025

    Abstract: Disclosed is an adaptive modulation scheme and apparatus thereof using an Analog/Digital (AJO) converter with variable bit resolution or clock frequency, the A/D converter including a transmitter including a modulator to modulate data to be transmitted according to a modulation scheme received from a receiver, an A/D converter to convert the modulated data into an analog signal using a bit resolution or a clock frequency received from the receiver, and a radio frequency (RF) processor to transmit the analog signal to the receiver through a wireless channel and a receiver including an RF processor to receive data through a wireless channel, a calculator to calculate a Signal to Noise Ratio (SNR) of the data received through the RF processor, and a modulation controller to search a predetermined setting table for a corresponding modulation scheme and bit resolution using the calculated SNR and to transmit to a transmitter.

    Abstract translation: 公开了一种使用具有可变比特分辨率或时钟频率的模拟/数字（AJO）转换器的自适应调制方案及其装置，该A / D转换器包括：发射机，包括调制器，用于根据从 接收器，A / D转换器，用于使用从接收器接收的位分辨率或时钟频率将调制数据转换为模拟信号;以及射频（RF）处理器，通过无线信道将模拟信号发送到接收机 以及接收机，其包括通过无线信道接收数据的RF处理器，用于计算通过RF处理器接收的数据的信噪比（SNR）的计算器，以及调制控制器，用于搜索预定的设置表以获得相应的调制 方案和比特分辨率，并发送到发射机。

    Method of fabricating thin film transistor
    210.
    发明授权
    Method of fabricating thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US07795082B2

    公开(公告)日：2010-09-14

    申请号：US11741273

    申请日：2007-04-27

    Applicant: Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park

    Inventor： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park

    IPC: H01L21/00

    CPC classification number: H01L21/02672 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/3226 ,  H01L27/1277 ,  H01L27/1288

    Abstract: A method of fabricating a CMOS thin film transistor includes: providing a substrate; forming an amorphous silicon layer on the substrate; performing a first annealing process on the substrate and crystallizing the amorphous silicon layer into a polysilicon layer; patterning the polysilicon layer to form first and second semiconductor layers; implanting first impurities into the first and second semiconductor layers; implanting second impurities into the first or second semiconductor layer; and performing a second annealing process on the semiconductor layers to remove the metal catalyst remaining in the first or second semiconductor layer, on which the second impurities are implanted, wherein the first impurities are implanted at a dose of 6×1013/cm2 to 5×1015/cm2, and the second impurities are implanted at a dose of 1×1011/cm2 to 3×1015/cm2.

    Abstract translation: 制造CMOS薄膜晶体管的方法包括：提供衬底; 在所述基板上形成非晶硅层; 在所述衬底上进行第一退火处理并将所述非晶硅层结晶成多晶硅层; 图案化多晶硅层以形成第一和第二半导体层; 将第一杂质注入到第一和第二半导体层中; 将第二杂质注入第一或第二半导体层; 以及对所述半导体层进行第二退火处理，以去除留在其中注入所述第二杂质的所述第一或第二半导体层中的金属催化剂，其中所述第一杂质以6×10 13 / cm 2至5× 1015 / cm2，第1杂质以1×10 11 / cm 2的剂量注入3×1015 / cm 2。

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