Abstract:
Methods of fabricating a static interferometric image device and static interferometric image device formed by the same are disclosed. In one embodiment, a method includes providing a substrate. A plurality of liquid layers are formed over the substrate by an inkjet process such that the layers are lateral to one another. The liquid layers contain a solidifiable material or particles. Then, the plurality of liquid layers are solidified to form a plurality of solid layers. In some embodiments, the substrate includes pre-defined cavities, and the liquid layers are formed in the cavities. In other embodiments, the substrate includes a substantially planar, stepped, or continuously transitioning surface, and the liquid layers are formed on the surface. The inkjet process provides optical fillers or spacers for defining interferometric gaps between absorbers and reflectors in the display device, based at least partially on an image that the display device is designed to display.
Abstract:
Disclosed herein are methods and systems for testing the electrical characteristics of reflective displays, including interferometric modulator displays. In one embodiment, a controlled voltage is applied to conductive leads in the display and the resulting current is measured. The voltage may be controlled so as to ensure that interferometric modulators do not actuate during the resistance measurements. Also disclosed are methods for conditioning interferometric modulator display by applying a voltage waveform that causes actuation of interferometric modulators in the display.
Abstract:
A microelectromechanical systems device having an electrical interconnect between circuitry outside the device and at least one of an electrode and a movable layer within the device. At least a portion of the electrical interconnect is formed from the same material as a conductive layer between the electrode and a mechanical layer of the device. In an embodiment, this conductive layer is a sacrificial layer that is subsequently removed to form a cavity between the electrode and the movable layer. The sacrificial layer is preferably formed of molybdenum, doped silicon, tungsten, or titanium. According to another embodiment, the conductive layer is a movable reflective layer that preferably comprises aluminum.
Abstract:
In various embodiments described herein, a display device comprising a light collection film and a photovoltaic device disposed on an edge of the collection film. The collection film has a plurality of light-turning features for redirecting light between the front and back surface of the collection film and the photovoltaic device. In some embodiments, a light source is also disposed on an edge of the collection film and emits light which is turned by the light-turning features toward the display.
Abstract:
A microelectromechanical systems device having support structures formed of sacrificial material that is selectively diffused with a dopant material or formed of a selectively oxidized metal sacrificial material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a diffused or oxidized sacrificial material.
Abstract:
A display with patterned photovoltaic (PV) material integrated on the front side and/or back side of the display is disclosed. Light may reach PV material situated behind a display through fully or partially transmissive features or gaps within the display. Display-generated light may also reach PV material behind a display. A patterned PV material situated in front of a display may collect both ambient light as well as display-generated light.
Abstract:
Color photovoltaic (PV) devices formed using interferometric stacks tuned to reflect color covering the front side or back side of a PV cell, device, panel, or array are disclosed. Interferometric stacks covering PV devices include interferometric modulators (IMODs), or dichroic pair stacks. Such devices can be configured to reflect enough light of select wavelengths so as to impart a color, while transmitting enough light to the PV active material so as to generate useful electricity.
Abstract:
Certain embodiments include interferometrically tuned photovoltaic cells wherein reflection from interfaces of layered photovoltaic devices coherently sum to produce an increased field in an active region of the photovoltaic cell where optical energy is converted into electrical energy. Such interferometrically tuned or interferometric photovoltaic devices (iPV) increase the absorption of optical energy in the active region of the interferometric photovoltaic cell and thereby increase the efficiency of the device. In various embodiments, one or more optical resonant cavities and/or optical resonant layers is included in the photovoltaic device to increase the electric field concentration and the absorption in the active region.
Abstract:
In certain embodiments, a device is provided that utilizes both interferometrically reflected light and transmitted light. Light incident on the device is interferometrically reflected from a plurality of layers of the device to emit light in a first direction, the interferometrically reflected light having a first color. Light from a light source is transmitted through the plurality of layers of the device to emit from the device in the first direction, the transmitted light having a second color.
Abstract:
An exemplary method for constraining spinous processes to elastically limit flexion of a spinal segment comprises piercing an interspinous ligament to form a first penetration above an upper side of an upper spinous process and advancing a first end of a first tether through the first penetration. The interspinous ligament is pierced again to form a second penetration below a lower side of a lower spinous process and a second end of a second tether is advanced through the second penetration. Joining the first and second tethers together forms an extensible tether structure coupling the upper and lower spinous processes together while permitting extension therebetween. Adjusting the tether structure sets relative distance or angle between the upper and lower spinous processes to a target value.