公开(公告)号：US10333032B2

公开(公告)日：2019-06-25

申请号：US14915873

申请日：2014-08-08

Applicant: OSRAM Opto Semiconductors GmbH ,  Karoline Bernhard-Hofer

Inventor： Frank Möllmer ,  Markus Arzberger ,  Michael Schwind ,  Thomas Höfer ,  Martin Haushalter ,  Mario Wiengarten ,  Tilman Eckert

IPC: H01L33/48 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L23/00 ,  H01L21/48 ,  H01L25/16 ,  H01L29/861 ,  H01L33/54 ,  H01L33/64

Abstract: An embodiment optoelectronic semiconductor device includes a housing having a leadframe with a first and second connection conductor. The housing further has a housing body surrounding the leadframe in one or more regions. The housing body extends in a vertical direction between a mounting side of the housing body and a front side of the housing body opposite the mounting side. The first connection conductor has a recess. A semiconductor chip configured to generate radiation is arranged within the housing, and the semiconductor chip is disposed in the recess and is affixed to the first connection conductor within the recess. A side face of the recess forms a reflector for reflecting the generated radiation. The first connection conductor protrudes from the housing body at the mounting side. The semiconductor chip is, in at least some regions, free of an encapsulation material adjoining the semiconductor chip.

公开(公告)号：US20190189605A1

公开(公告)日：2019-06-20

申请号：US16329821

申请日：2017-08-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel Leisen ,  Markus Pindl ,  Simon Jerebic

IPC: H01L25/16 ,  H01L33/62 ,  H01L33/52

CPC classification number: H01L25/167 ,  H01L31/0203 ,  H01L33/52 ,  H01L33/62

Abstract: An arrangement includes a carrier; an optoelectronic component arranged on the carrier; and a material arranged on the carrier, wherein the carrier includes at least one structural element that hinders flow of the material in a flow direction, the structural element extends transversely to the flow direction, and the structural element has a rounding radius in a plane perpendicular to the transverse extent of the structural element less than 20 μm.

公开(公告)号：US20190181299A1

公开(公告)日：2019-06-13

申请号：US16216067

申请日：2018-12-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Franz Eberhard ,  Björn Muermann ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/46

Abstract: A radiation-emitting semiconductor chip includes a semiconductor body having an active region that generates radiation; a first contact layer having a first contact surface and a first contact web structure connected to the first contact surface; a second contact layer having a second contact surface and a second contact web structure connected to the second contact surface, wherein the first contact web structure and the second contact web structure overlap in places in plan view of the semiconductor chip; a current distribution layer through which the first semiconductor layer electrically conductively connects to the first contact layer; and an insulation layer containing a dielectric material, wherein the insulation layer is arranged between the first semiconductor layer and the current distribution layer and has a plurality of openings into which the current distribution layer extends, and a diameter of the openings is 1 μm to 20 μm.

公开(公告)号：US20190181296A1

公开(公告)日：2019-06-13

申请号：US16322995

申请日：2017-07-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Korbinian Perzlmaier

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/62 ,  H01L33/40

Abstract: A component includes a carrier; and a semiconductor body arranged on the carrier, wherein the semiconductor body includes a semiconductor layer facing away from the carrier, a further semiconductor layer facing the carrier and an optically active layer located therebetween, the carrier has a metallic carrier layer that is contiguous and mechanically stabilizes the component, the carrier includes a mirror layer disposed between the semiconductor body and the carrier layer, and the carrier has a compensating layer directly adjacent to the carrier layer and configured to compensate for internal mechanical strains in the component.

公开(公告)号：US20190172972A1

公开(公告)日：2019-06-06

申请号：US16309995

申请日：2017-05-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/52

Abstract: In an embodiment, a method for producing a plurality of optoelectronic semiconductor components is disclosed, wherein the method includes inserting a plurality of optoelectronic semiconductor chips with a suitable orientation into a linear feeding device, conveying the optoelectronic semiconductor chips to an injection device having an outlet opening, encapsulating the optoelectronic semiconductor chips with at least one cladding layer in the injection device and pressing the encapsulated optoelectronic semiconductor chips out of the outlet opening, wherein a compound of optoelectronic semiconductor chips is formed in which the optoelectronic semiconductor chips are connected to one another by the at least one cladding layer and separating the compound into a plurality of optoelectronic semiconductor components each component having an optoelectronic semiconductor chip which is at least partially encapsulated by the at least one cladding layer.

公开(公告)号：US10312413B2

公开(公告)日：2019-06-04

申请号：US15542935

申请日：2015-12-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Hoeppel ,  Norwin von Malm

IPC: H01L33/38 ,  H01L33/48 ,  H01L33/62

Abstract: A component with a semiconductor body, a first metal layer and a second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer. The semiconductor body has a first semiconductor layer, a second semiconductor layer, and an active layer. The component has a plated-through hole, which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer. The second metal layer has a first subregion, and a second subregion, spaced apart laterally from the first subregion by an intermediate space. The first subregion is electrically connected to the plated-through hole and is assigned to a first electrical polarity of the component. In plan view, the first metal layer laterally completely bridges the intermediate space and is assigned to a second electrical polarity of the component which differs from the first electrical polarity.

公开(公告)号：US20190157520A1

公开(公告)日：2019-05-23

申请号：US16198812

申请日：2018-11-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Seibald ,  Dominik Baumann ,  Stefan Lange ,  Hubert Huppertz ,  Thorsten Schroeder ,  Daniel Bichler ,  Gudrun Plundrich ,  Simon Peschke ,  Gregor Hoerder ,  Gina Maya Achrainer ,  Klaus Wurst

IPC: H01L33/50 ,  C09K11/77 ,  C01G9/00 ,  C01F5/00

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; −3.5≤u≤4; 3.5≤v≤4; (−0.2)≤w≤0.2 and 0≤m 0.125 v.

公开(公告)号：US20190157251A1

公开(公告)日：2019-05-23

申请号：US16186395

申请日：2018-11-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank Singer ,  Andreas Dobner

IPC: H01L25/13 ,  H01L33/62 ,  H01L25/16 ,  H01L33/48

Abstract: A display device and a method for producing a display device are disclosed. In an embodiment a display device includes a flat textile support and a plurality of optoelectronic semiconductor components disposed on the support. Each semiconductor component includes a connection substrate comprising a plurality of electrical connections, the plurality of electrical connections electrically connected via electrically conductive contact threads, wherein each electrical connection is realized by a contact hole which completely penetrates through the semiconductor component and, viewed in a plan view, is surrounded all around by the connection substrate and wherein, in each case, at least one contact thread runs through the contact hole so that the contact thread is arranged in part on an upper side of the semiconductor component facing away from the support, a plurality of semiconductor chips for generating light and at least one control unit for adjusting a color location of the light.

公开(公告)号：US20190146199A1

公开(公告)日：2019-05-16

申请号：US16098240

申请日：2017-05-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Simon Schwalenberg

IPC: G02B19/00 ,  G02B3/00 ,  G02B3/08 ,  G02B27/12 ,  G02B27/10 ,  G03B15/05

CPC classification number: G02B19/0009 ,  F21V5/004 ,  G02B3/0037 ,  G02B3/08 ,  G02B19/0028 ,  G02B19/0066 ,  G02B27/0955 ,  G02B27/1006 ,  G02B27/123 ,  G03B15/05 ,  G03B2215/0592

Abstract: A lens and a flash are disclosed. In an embodiment a lens includes a light entrance side having a plurality of Fresnel elements, a light exit side having a plurality of exit lenses having a second focal length and an optical axis, wherein the Fresnel elements and the exit lenses are optically associated with one another in a one-to-one manner, wherein each Fresnel element has an entrance surface which is convex in shape and which forms an entrance lens having a first focal length, wherein each Fresnel element has a deflection surface arranged directly downstream of the entrance surface, wherein the deflection surface is configured to deflect the light which entered the lens through the entrance surface by total internal reflection towards an associated exit lens, and wherein, with a tolerance, each entrance surface and the associated exit lens are located in the interrelated focal points.

公开(公告)号：US20190144745A1

公开(公告)日：2019-05-16

申请号：US16202182

申请日：2018-11-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Seibald ,  Dominik Baumann ,  Tim Fiedler ,  Stefan Lange ,  Hubert Huppertz ,  Daniel Dutzler ,  Thorsten Schroeder ,  Daniel Bichler ,  Gudrun Plundrich ,  Simon Peschke ,  Gregor Hoerder ,  Gina Maya Achrainer ,  Klaus Wurst

IPC: C09K11/77 ,  C09K11/08

Abstract: A phosphor is specified. The phosphor has the general molecular formula: (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC═N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; 3.5≤u≤4; 3.5≤v≤4; (−0.2)≤w≤0.2 and 0≤m 0.125 v.