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    Memory cells, memory arrays, and methods of forming memory cells and arrays
    222.
    发明授权
    Memory cells, memory arrays, and methods of forming memory cells and arrays 有权
    存储单元，存储器阵列以及形成存储单元和阵列的方法

    公开(公告)号：US09484536B2

    公开(公告)日：2016-11-01

    申请号：US14799467

    申请日：2015-07-14

    Applicant: Micron Technology, Inc.

    Inventor： Andrea Redaelli ,  Giorgio Servalli ,  Carmela Cupeta ,  Fabio Pellizzer

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1293 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1666 ,  H01L45/1675

    Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.

    Abstract translation: 一些实施例包括形成存储器单元的方法。 加热器结构形成在电节点阵列上，相变材料跨过加热器结构形成。 相变材料被图案化成多个限制结构，其中限制结构与加热器结构一一对应，并且通过一个或多个完全横向围绕每个限制结构的绝缘材料彼此间隔开 。 一些实施例包括在电节点阵列上具有加热器结构的存储器阵列。 密闭相变材料结构在加热器结构之上，并且与加热器结构一一对应。 受限制的相变材料结构通过一个或多个完全横向围绕每个限定相变材料结构的绝缘材料彼此间隔开。

    Memory arrays and methods of forming memory arrays
    223.
    发明授权
    Memory arrays and methods of forming memory arrays 有权

    公开(公告)号：US09461246B2

    公开(公告)日：2016-10-04

    申请号：US15064002

    申请日：2016-03-08

    Applicant: Micron Technology, Inc.

    Inventor： Mattia Boniardi ,  Andrea Redaelli

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1293 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/128 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

    Abstract: Some embodiments include memory arrays having a plurality of memory cells vertically between bitlines and wordlines. The memory cells contain phase change material. Heat shields are laterally between immediately adjacent memory cells along a bitline direction. The heat shields contain electrically conductive material and are electrically connected with the bitlines. Some embodiments include memory arrays having a plurality of memory cells arranged in a first grid. The first grid has columns along a first direction and has rows along a second direction substantially orthogonal to the first direction. First heat shields are between adjacent memory cells along the first direction and are arranged in a second grid offset from the first grid along the first direction. Second heat shields are between adjacent memory cells along the second direction, and are arranged lines in lines extending along the first direction. Some embodiments include methods for forming memory arrays.

    Memory arrays and methods of forming memory arrays
    228.
    发明授权
    Memory arrays and methods of forming memory arrays 有权
    存储器阵列和形成存储器阵列的方法

    公开(公告)号：US09312481B2

    公开(公告)日：2016-04-12

    申请号：US14226643

    申请日：2014-03-26

    Applicant: Micron Technology, Inc.

    Inventor： Mattia Boniardi ,  Andrea Redaelli

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1293 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/128 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

    Abstract: Some embodiments include memory arrays having a plurality of memory cells vertically between bitlines and wordlines. The memory cells contain phase change material. Heat shields are laterally between immediately adjacent memory cells along a bitline direction. The heat shields contain electrically conductive material and are electrically connected with the bitlines. Some embodiments include memory arrays having a plurality of memory cells arranged in a first grid. The first grid has columns along a first direction and has rows along a second direction substantially orthogonal to the first direction. First heat shields are between adjacent memory cells along the first direction and are arranged in a second grid offset from the first grid along the first direction. Second heat shields are between adjacent memory cells along the second direction, and are arranged lines in lines extending along the first direction. Some embodiments include methods for forming memory arrays.

    Abstract translation: 一些实施例包括在位线和字线之间垂直地具有多个存储单元的存储器阵列。 存储单元包含相变材料。 热屏蔽沿着位线方向横向位于紧邻的存储单元之间。 隔热罩包含导电材料并与位线电连接。 一些实施例包括具有布置在第一网格中的多个存储单元的存储器阵列。 第一格栅具有沿着第一方向的列，并且沿着与第一方向大致正交的第二方向具有列。 第一热屏蔽沿着第一方向位于相邻存储单元之间，并且沿着第一方向布置成与第一格栅偏移的第二格栅。 第二隔热板沿着第二方向位于相邻存储单元之间，并沿着第一方向延伸的线排列。 一些实施例包括用于形成存储器阵列的方法。

    PHASE CHANGE MEMORY APPARATUSES AND METHODS OF FORMING SUCH APPARATUSES
    229.
    发明申请
    PHASE CHANGE MEMORY APPARATUSES AND METHODS OF FORMING SUCH APPARATUSES 有权
    相变记忆装置和形成这种装置的方法

    公开(公告)号：US20150340408A1

    公开(公告)日：2015-11-26

    申请号：US14285286

    申请日：2014-05-22

    Applicant: Micron Technology, Inc.

    Inventor： Ugo Russo ,  Andrea Redaelli ,  Giorgio Servalli

    IPC: H01L27/24 ,  H01L45/00

    CPC classification number: H01L27/2445 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1608

    Abstract: Phase change memory apparatuses include memory cells including phase change material, bit lines electrically coupled to aligned groups of at least some of the memory cells, and heating elements electrically coupled to the phase change material of the memory cells. The heating elements include vertical portions extending in a bit line direction. Additional phase change memory apparatuses include dummy columns positioned between the memory columns and base contact columns. The dummy columns include phase change memory cells and lack heating elements coupled to the phase change memory cells thereof. Additional phase change memory apparatuses include heating elements operably coupled to phase change memory cells. An interfacial area between the heating elements and the phase change memory cells has a length that is independent of a bit line width. Methods relate to forming such phase change memory apparatuses.

    Abstract translation: 相变存储装置包括存储单元，其包括相变材料，电耦合到至少一些存储单元的对准组的位线以及电耦合到存储单元的相变材料的加热元件。 加热元件包括沿位线方向延伸的垂直部分。 附加的相变存储装置包括位于存储器列和基极接触柱之间的虚拟列。 虚拟列包括相变存储单元，并且没有耦合到其相变存储单元的加热元件。 附加的相变存储装置包括可操作地耦合到相变存储器单元的加热元件。 加热元件和相变存储器单元之间的界面面积具有与位线宽度无关的长度。 方法涉及形成这种相变存储装置。

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